JPS61176117A - X-ray exposing device - Google Patents

X-ray exposing device

Info

Publication number
JPS61176117A
JPS61176117A JP60016740A JP1674085A JPS61176117A JP S61176117 A JPS61176117 A JP S61176117A JP 60016740 A JP60016740 A JP 60016740A JP 1674085 A JP1674085 A JP 1674085A JP S61176117 A JPS61176117 A JP S61176117A
Authority
JP
Japan
Prior art keywords
mask
wafer
optical system
mark
several
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60016740A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
誠一 岩松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60016740A priority Critical patent/JPS61176117A/en
Publication of JPS61176117A publication Critical patent/JPS61176117A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To easily maintain a proximity gap in a highly precise manner as well as to unnecessitate the optical transparency of a mask by a method wherein an optical system, with which a positioning mark put on each wafer and mask is detected, is provided between the wafer and the mask. CONSTITUTION:An optical system such as a reflection optical system 17, a lens optical system and the like is provided in the gap G of 20mum or more, several mm, several cm or several tens of cm located between the mark 12 formed on the surface of a wafer 11 and the mark 15 formed on the surface of the X-ray mask consisting of a frame 14 and a membrene film 13, and said optical system is positioned using the marks 12 and 15 of the mask and the wafer. This device has a high degree of parallelism like a synchrotoron radiation light, and the device is effective when the X-ray source of high luminance is used.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明けＸＷｊｔｌｌＫ光装置の構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to the structure of the XWjtllK optical device according to the present invention.

〔従来の技術〕[Conventional technology]

従来、Ｘ線露光装置におけるウェーハとマスクの合せマ
ークの検出光学系は第１図に示すごとき模式図のとと角
構成となってＶするのが通例であっ九。すなわち、ウェ
ーハ１の表面忙形成され之マーク２と、フレーム４とメ
ンプラン膜３からなるＸ線マスクの表面忙形成さｈたマ
ーク５とを、つ。Conventionally, an optical system for detecting an alignment mark between a wafer and a mask in an X-ray exposure apparatus has generally had a dotted corner configuration as shown in the schematic diagram of FIG. That is, a mark 2 formed on the surface of the wafer 1 and a mark 5 formed on the surface of the X-ray mask consisting of the frame 4 and the membrane film 3 are included.

ェーハとマスクの間隔りを１０−２０μｍのいわゆるプ
ロ中シミティー・ギャップを僅って、マスク上カラの光
学系６によりマスクとウェーハのマーク２と５を焦点内
にとらえて位置合せするのが通例であった。It is customary to align the marks 2 and 5 on the mask and wafer within the focal point using an optical system 6 located on the mask, with a so-called smightness gap of 10 to 20 μm between the wafer and the mask. Met.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかし、上記従来技術によると、プｐ−？シミティー・
ギヤ９プを高精度に保つのｈ′−困難なことやマスクが
光学的に透明である必要がある等の問題点ｂ−あった。However, according to the above-mentioned prior art, p-? Simity
There were problems b- such as difficulty in maintaining the gear 9 with high precision and the need for the mask to be optically transparent.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決するため忙、本発ＦＩＡは、Ｘ線露光
装置において、ウェーハとマスクの間隔にけウェーハと
マスクの各々に形成され几合せマークを検出する光学系
を具備することを特徴とする。In order to solve the above problems, the present FIA is characterized in that an X-ray exposure apparatus is equipped with an optical system that detects alignment marks formed on each of the wafer and the mask at a distance between the wafer and the mask. do.

〔実施例〕〔Example〕

以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.

！２図は本発明の一実施例を示すＸ線露光装置における
ウェーハとマスクの合せマークの検出光学系の模式図で
ある。すなわち、ウェーハ１１の表面に形成されたマー
ク１２とフレーム１４とメンプラン［１１３からなるＸ
線マスクの表面に形成さｈたマーク１５とを、ウェーハ
とマスクの間隔ｆ２０μｍ以上、数籠、数ｃＩＲあるめ
は数十１離したギャップＧの間に反射光学系１７やレン
ズ光学系１６等からなるいわゆる光学系を設け、マスク
とウェーハのマーク１５と１２をとら走て位置合せする
。! FIG. 2 is a schematic diagram of an optical system for detecting alignment marks between a wafer and a mask in an X-ray exposure apparatus showing an embodiment of the present invention. That is, the mark 12 formed on the surface of the wafer 11, the frame 14, and the
A reflection optical system 17, a lens optical system 16, etc. are connected between the mark 15 formed on the surface of the line mask and the gap G, which is separated by a distance f of 20 μm or more between the wafer and the mask, several cages, several cIR, or several tens of meters. A so-called optical system is provided, and the marks 15 and 12 on the mask and wafer are aligned.

〔発明の効果〕〔Effect of the invention〕

本発明はシンクｔ−トロン放射光のごとく平行度カー高
く、且つ輝度も高いＸ線源を用いるｘ１ｓ露光装置にお
いて有効であり、その場合、ギヤ９プ間隔の制御は容易
となり、マスクは必ずしも光学的に透明である必要なく
なるという効果ｈＺ　、ｆ−る。The present invention is effective in x1s exposure equipment that uses an X-ray source with high parallelism and high brightness, such as synchrotron radiation. The effect is that it is no longer necessary to be transparent.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来技術におけるＸ線露光装置のウェーハとマ
スクの合せマーク検出光学系を示す模式図、第２図は本
発明によるＸ線露光装置のウェーハとマスクの合せマー
ク検出光学系を示す模式図である。 １．１１・・・・・・ウェーハ ２、１２．５．１５・・・・・・マー々３．１３・川・
・メンプラン嘆 ４．１４・・・−・・フレーム ６．１６．１７・・・・・・光学系 ｇ・・…・ブロキシミティー・ギヤダブＧ・・・・・・
ギャップ 以　　上FIG. 1 is a schematic diagram showing an optical system for detecting alignment marks between a wafer and a mask in an X-ray exposure apparatus in the prior art, and FIG. 2 is a schematic diagram showing an optical system for detecting alignment marks between a wafer and a mask in an X-ray exposure apparatus according to the present invention. It is a diagram. 1.11...Wafer 2, 12.5.15...Mars 3.13・River・
・Menplan 4.14...--Frame 6.16.17...Optical system g...Broximity gear dub G...
Gap or more

Claims (1)

【特許請求の範囲】[Claims] 　ウェーハとマスクの間隔にはウェーハとマスクの各々
に形成された合せマークを検出する光学系を具備するこ
とを特徴とするＸ線露光装置。An X-ray exposure apparatus characterized in that an optical system is provided between the wafer and the mask to detect alignment marks formed on each of the wafer and the mask.
JP60016740A 1985-01-31 1985-01-31 X-ray exposing device Pending JPS61176117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60016740A JPS61176117A (en) 1985-01-31 1985-01-31 X-ray exposing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60016740A JPS61176117A (en) 1985-01-31 1985-01-31 X-ray exposing device

Publications (1)

Publication Number Publication Date
JPS61176117A true JPS61176117A (en) 1986-08-07

Family

ID=11924662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60016740A Pending JPS61176117A (en) 1985-01-31 1985-01-31 X-ray exposing device

Country Status (1)

Country Link
JP (1) JPS61176117A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325414A (en) * 1991-02-01 1994-06-28 Sortec Corporation X-ray mask alignment method and apparatus therefor as well as X-ray mask to be used to said method and said apparatus
JP2010245105A (en) * 2009-04-01 2010-10-28 Mitsubishi Electric Corp Aligner and exposure method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325414A (en) * 1991-02-01 1994-06-28 Sortec Corporation X-ray mask alignment method and apparatus therefor as well as X-ray mask to be used to said method and said apparatus
JP2010245105A (en) * 2009-04-01 2010-10-28 Mitsubishi Electric Corp Aligner and exposure method

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