JPS61174777A - 半導体放射線検出器の製造方法 - Google Patents
半導体放射線検出器の製造方法Info
- Publication number
- JPS61174777A JPS61174777A JP60015682A JP1568285A JPS61174777A JP S61174777 A JPS61174777 A JP S61174777A JP 60015682 A JP60015682 A JP 60015682A JP 1568285 A JP1568285 A JP 1568285A JP S61174777 A JPS61174777 A JP S61174777A
- Authority
- JP
- Japan
- Prior art keywords
- film
- boron
- substrate
- semiconductor substrate
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015682A JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015682A JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61174777A true JPS61174777A (ja) | 1986-08-06 |
JPH0476515B2 JPH0476515B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=11895519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60015682A Granted JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61174777A (enrdf_load_stackoverflow) |
-
1985
- 1985-01-30 JP JP60015682A patent/JPS61174777A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0476515B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5719414A (en) | Photoelectric conversion semiconductor device with insulation film | |
JP4278515B2 (ja) | ソーラセル及びソーラセルの製造法 | |
EP0175567B1 (en) | Semiconductor solar cells | |
Perez-Mendez et al. | Hydrogenated amorphous silicon pixel detectors for minimum ionizing particles | |
JPS59227168A (ja) | 半導体放射線検出器 | |
EP0438889B1 (en) | Method of forming an amorphous silicon sensor | |
US5019886A (en) | Semiconductor-based radiation-detector element | |
CN109686812A (zh) | 基于隧穿氧化层的键合硅pin辐射响应探测器及制备方法 | |
US5156979A (en) | Semiconductor-based radiation-detector element | |
US4524374A (en) | Device for detecting infrared rays | |
CA1078948A (en) | Method of fabricating silicon photodiodes | |
JPS61174777A (ja) | 半導体放射線検出器の製造方法 | |
JPS6135384A (ja) | 中性子検出装置 | |
Tove | The role of contacts to nuclear radiation detectors | |
Foulon et al. | A new technique for the fabrication of thin silicon radiation detectors | |
JPH0447992B2 (enrdf_load_stackoverflow) | ||
Pellegrini et al. | Double sided 3D detector technologies at CNM-IMB | |
JPH0513390B2 (enrdf_load_stackoverflow) | ||
RU2611552C2 (ru) | Фотоприемное устройство (варианты) и способ его изготовления | |
CN108281480A (zh) | 一种同时产生电离和位移缺陷信号的器件及其制备方法 | |
JPH0473636B2 (enrdf_load_stackoverflow) | ||
Cho | Signal and noise analysis of hydrogenated amorphous silicon radiation detector-amplifier system | |
JPH069254B2 (ja) | 半導体放射線検出素子の製造方法 | |
US6174750B1 (en) | Process for fabricating a drift-type silicon radiation detector | |
JPH01253973A (ja) | 半導体放射線検出器およびその製造方法 |