JPH0476515B2 - - Google Patents
Info
- Publication number
- JPH0476515B2 JPH0476515B2 JP60015682A JP1568285A JPH0476515B2 JP H0476515 B2 JPH0476515 B2 JP H0476515B2 JP 60015682 A JP60015682 A JP 60015682A JP 1568285 A JP1568285 A JP 1568285A JP H0476515 B2 JPH0476515 B2 JP H0476515B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- semiconductor substrate
- film
- region
- boron film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T3/00—Measuring neutron radiation
- G01T3/08—Measuring neutron radiation with semiconductor detectors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015682A JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60015682A JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61174777A JPS61174777A (ja) | 1986-08-06 |
JPH0476515B2 true JPH0476515B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=11895519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60015682A Granted JPS61174777A (ja) | 1985-01-30 | 1985-01-30 | 半導体放射線検出器の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61174777A (enrdf_load_stackoverflow) |
-
1985
- 1985-01-30 JP JP60015682A patent/JPS61174777A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61174777A (ja) | 1986-08-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5719414A (en) | Photoelectric conversion semiconductor device with insulation film | |
US4681983A (en) | Semiconductor solar cells | |
Perez-Mendez et al. | Hydrogenated amorphous silicon pixel detectors for minimum ionizing particles | |
JPH0481352B2 (enrdf_load_stackoverflow) | ||
US20200119207A1 (en) | Current generation from radiation with diamond diode-based devices for detection or power generation | |
US5019886A (en) | Semiconductor-based radiation-detector element | |
US5156979A (en) | Semiconductor-based radiation-detector element | |
US4524374A (en) | Device for detecting infrared rays | |
JPH0476515B2 (enrdf_load_stackoverflow) | ||
JPS6135384A (ja) | 中性子検出装置 | |
JPH0447992B2 (enrdf_load_stackoverflow) | ||
Tove | The role of contacts to nuclear radiation detectors | |
US3742215A (en) | Method and apparatus for a semiconductor radiation detector | |
JPH0473636B2 (enrdf_load_stackoverflow) | ||
GB2166280A (en) | Semiconductor thermal neutron detector and thermal neutron detection method | |
JPS61152084A (ja) | 半導体中性子検出器 | |
JPH0513390B2 (enrdf_load_stackoverflow) | ||
JPH069254B2 (ja) | 半導体放射線検出素子の製造方法 | |
CN108281480A (zh) | 一种同时产生电离和位移缺陷信号的器件及其制备方法 | |
Dearnaley | Semiconductor nuclear radiation detectors | |
JPS6142433B2 (enrdf_load_stackoverflow) | ||
JPH0716024B2 (ja) | 半導体放射線検出素子の製造方法 | |
Cho | Signal and noise analysis of hydrogenated amorphous silicon radiation detector-amplifier system | |
Hallén et al. | Divacancy distributions in fast ion irradiated silicon | |
Ponpon | 3 Semiconductor Detectors |