JPH0473636B2 - - Google Patents

Info

Publication number
JPH0473636B2
JPH0473636B2 JP59096110A JP9611084A JPH0473636B2 JP H0473636 B2 JPH0473636 B2 JP H0473636B2 JP 59096110 A JP59096110 A JP 59096110A JP 9611084 A JP9611084 A JP 9611084A JP H0473636 B2 JPH0473636 B2 JP H0473636B2
Authority
JP
Japan
Prior art keywords
boron
radiation
thermal neutron
rays
neutron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59096110A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60240161A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59096110A priority Critical patent/JPS60240161A/ja
Publication of JPS60240161A publication Critical patent/JPS60240161A/ja
Publication of JPH0473636B2 publication Critical patent/JPH0473636B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP59096110A 1984-05-14 1984-05-14 半導体放射線検出器 Granted JPS60240161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59096110A JPS60240161A (ja) 1984-05-14 1984-05-14 半導体放射線検出器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59096110A JPS60240161A (ja) 1984-05-14 1984-05-14 半導体放射線検出器

Publications (2)

Publication Number Publication Date
JPS60240161A JPS60240161A (ja) 1985-11-29
JPH0473636B2 true JPH0473636B2 (enrdf_load_stackoverflow) 1992-11-24

Family

ID=14156247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59096110A Granted JPS60240161A (ja) 1984-05-14 1984-05-14 半導体放射線検出器

Country Status (1)

Country Link
JP (1) JPS60240161A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253683A (ja) * 1988-03-31 1989-10-09 Matsushita Electric Ind Co Ltd 中性子検出器および中性子検出器アレイ
JP2500886B2 (ja) * 1992-02-25 1996-05-29 アロカ株式会社 中性子検出装置
JPH10325877A (ja) * 1997-05-26 1998-12-08 Fuji Electric Co Ltd 半導体中性子線検出素子

Also Published As

Publication number Publication date
JPS60240161A (ja) 1985-11-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term