JPS61168229A - Apparatus for vapor growth - Google Patents
Apparatus for vapor growthInfo
- Publication number
- JPS61168229A JPS61168229A JP961085A JP961085A JPS61168229A JP S61168229 A JPS61168229 A JP S61168229A JP 961085 A JP961085 A JP 961085A JP 961085 A JP961085 A JP 961085A JP S61168229 A JPS61168229 A JP S61168229A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- plasma
- reaction tube
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000012495 reaction gas Substances 0.000 claims abstract description 10
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 abstract description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 229910000077 silane Inorganic materials 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 3
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 150000003018 phosphorus compounds Chemical class 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- -1 phosphorus compound Chemical class 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は気相成長方法に係わり、特に減圧ＣＶＤ装置内
に配置された基板を外部加熱とプラズマ化したキャリア
ガスを導入することにより効率的に気相成長を行う製造
装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a vapor phase growth method, and particularly to a method for efficiently growing a substrate placed in a low-pressure CVD apparatus by externally heating the substrate and introducing a carrier gas turned into plasma. The present invention relates to a manufacturing apparatus that performs vapor phase growth.
従来から半導体装置の製造工程では、常圧ＣＶＤ装置に
よる気相成長が採用されているが、特に最近では膜厚の
均−性等から減圧ＣＶＤ装置で気相成長を行う方法が広
範囲に利用され、例えば、半導体装置の絶縁膜として使
用される燐珪酸ガラス（ＰＳＧ）等は減圧ＣＶＤ装置で
形成されるのが普通である。Vapor phase growth using normal pressure CVD equipment has traditionally been used in the manufacturing process of semiconductor devices, but recently, vapor phase growth using low pressure CVD equipment has been widely used for reasons such as uniformity of film thickness. For example, phosphosilicate glass (PSG) used as an insulating film for semiconductor devices is usually formed using a low pressure CVD apparatus.
第２図は、減圧ＣＶＤ装置を説明するための断面図であ
る。FIG. 2 is a sectional view for explaining the low pressure CVD apparatus.
反応管１があって、その反応管に反応ガスの供給孔２と
排気孔３があり、反応管内部には被気相成長基板として
半導体ウェハ４が配置され、そのウェハを加熱するため
に、反応管の外部に加熱装置５が設けられている。There is a reaction tube 1, and the reaction tube has a reaction gas supply hole 2 and an exhaust hole 3. Inside the reaction tube, a semiconductor wafer 4 is placed as a substrate to be subjected to vapor phase growth, and in order to heat the wafer, A heating device 5 is provided outside the reaction tube.
例えば、ＰＳＧを形成する場合に使用される反応ガスは
、シランガスが１００ｃｃ／分、酸素ガスが１００ｃｃ
／分、燐酸１０ｃｃ／分程度が適量であり、減圧ＣＶＤ
装置の圧力は０．５Ｔｏｒｒにして、ウェハの加熱温度
は約４５０℃程度であって、この条件でＰＳＧをＣＶＤ
成膜を行うと、ＰＳＧの膜厚の生成レートは、１５０人
ｍ１分である。For example, the reaction gases used when forming PSG are silane gas at 100 cc/min and oxygen gas at 100 cc/min.
The appropriate amount is about 10 cc/min of phosphoric acid, and low pressure CVD
The pressure of the apparatus was set to 0.5 Torr, and the heating temperature of the wafer was approximately 450°C. Under these conditions, PSG was subjected to CVD.
When the film is formed, the production rate of the PSG film thickness is 150 people/m/min.
第３図は、この減圧ＣＶＤ装置を使用して形成された半
導体に使用されたＰＳＧの断面図であるが、シリコン基
板１１があり、Ｄ−ＰＳＧ１２が形成されていて、その
面にコンタク１−ホール１３が設けられていて、そこか
らアルミニウム電極１４が引き出されて、更にその表面
がＣ−ＰＳＧ１５によって被覆されている。FIG. 3 is a cross-sectional view of a PSG used in a semiconductor formed using this low pressure CVD apparatus. There is a silicon substrate 11, a D-PSG 12 is formed, and a contact 1- A hole 13 is provided, from which an aluminum electrode 14 is drawn out, and its surface is further covered with C-PSG 15.
このような構造では、屡々Ｄ−ＰＳＧ１２とアルミニウ
ム電極１４との接面の端部Ａ部からｃ−ｐｓＧ１５の段
差部Ｂまでの肩部分での結合力が弱く、これが原因にな
って亀裂１６を生じ、この亀裂が剥離すると、その剥δ
１を部分からプラスチ・ツクのパ・ノケージを通して、
湿度による水分が内部に浸入してアルミニウム電極１４
が腐食するという欠点があった。In such a structure, the bonding force is often weak at the shoulder part from the end A of the contact surface between the D-PSG 12 and the aluminum electrode 14 to the stepped part B of the c-PSG 15, and this causes the crack 16. When this crack occurs, the peeling δ
Pass part 1 through the plastic case from part 1,
Moisture due to humidity infiltrates the aluminum electrode 14.
The disadvantage was that it corroded.
このような段差部分に発生する剥離は、ＰＳＧの結合力
が脆弱であるために発生するものであるが、ＰＳＧを形
成した後、これを１０００’ｃ程度で加熱することによ
り結合力ＰＳＧの結合力を強化することができ亀裂の発
生を防止することが出来るが、半導体装置の場合にはア
ルミニウムがあるために高温処理が困難であるという不
具合がある。Peeling that occurs at such stepped portions occurs because the bonding force of PSG is weak. Although it is possible to strengthen the force and prevent the occurrence of cracks, there is a problem in that semiconductor devices have difficulty in high-temperature processing due to the presence of aluminum.
上記の減圧ＣＶＤによる成長膜の形成方法では、反応ガ
スの雰囲気中でウェハを外部加熱するのみでは、気相成
長された膜の結合エネルギーが小であることが問題点で
あり、そのために膜に亀裂が発生して剥離の原因になる
。The problem with the above-mentioned method of forming a film grown by low pressure CVD is that the bonding energy of the vapor-phase grown film is small if only the wafer is externally heated in a reaction gas atmosphere. Cracks occur and cause peeling.
本発明は、上記問題点を解消した気相成長方法を提供す
るもので、その手段は、反応管とその外部に加熱装置を
有する減圧ＣＶＤ装置において、反応管内の基板を、上
記加熱装置によって加熱をすると共に、反応ガスが導入
された該反応管内にプラズマ化したキャリアガスを導入
して該基板上に気相成長を行う気相成長装置によって達
成できる。The present invention provides a vapor phase growth method that solves the above-mentioned problems.The present invention provides a method for vapor phase growth that solves the above-mentioned problems. This can be achieved using a vapor phase growth apparatus that performs vapor phase growth on the substrate by introducing a carrier gas turned into plasma into the reaction tube into which the reaction gas is introduced.
本発明は、減圧ＣＶＤによる気相成長の成長膜の結合エ
ネルギーの不足を強化するために、減圧ＣＶＤの反応管
内の基板を外部加熱をすると共に、反応管内にプラズマ
化したキャリアガスを導入することにより、加熱エネル
ギーとプラズマのエネルギーの相乗効果により、反応ガ
スの分解を促進して気相成長を行い、成長膜の結合エネ
ルギーを大きくするように考慮したものである。In order to strengthen the lack of bonding energy in a film grown by vapor phase growth by low pressure CVD, the present invention externally heats the substrate in a low pressure CVD reaction tube and introduces a carrier gas turned into plasma into the reaction tube. The synergistic effect of the heating energy and the plasma energy promotes the decomposition of the reactive gas to perform vapor phase growth, thereby increasing the bonding energy of the grown film.
第１図は本発明の実施例である減圧気相成長装置の模式
断面図である。FIG. 1 is a schematic cross-sectional view of a reduced pressure vapor phase growth apparatus which is an embodiment of the present invention.
反応管１１があり、反応ガスの供給部１２と排気孔１３
があって、基板１４が反応管内の反応室１５に配置され
、−力木発明によるプラズマ発生装置１６は反応室１５
と窓１７を介して結合され、基板１４と数百ｍｍの間隔
で配置されている。There is a reaction tube 11, a reaction gas supply section 12 and an exhaust hole 13.
The substrate 14 is placed in the reaction chamber 15 in the reaction tube, and the plasma generating device 16 according to Rikiki's invention is placed in the reaction chamber 15.
and the substrate 14 through a window 17, and are arranged at an interval of several hundred mm from the substrate 14.
プラズマ発生装置１６は、マイクロ波発振器１８、導波
管１９、石英等からなるマイクロ波導波管２０を有し、
マイクロ波によってキャリアガスを励振してプラズマ化
するものである。The plasma generator 16 includes a microwave oscillator 18, a waveguide 19, and a microwave waveguide 20 made of quartz or the like,
The carrier gas is excited by microwaves and turned into plasma.
反応管１１には気相成長に必要な反応ガスであるシラン
ガス（Ｓｉｎ４）及び燐化合物（円１３）との混合ガス
を数ｍｍＴｏｒｒ程度に封入し、同時にプラズマ発生装
置１６ではアルゴン又は窒素等のキャリアガスをプラズ
マ化して反応室１５に導入する。The reaction tube 11 is filled with a mixed gas of silane gas (Sin4) and a phosphorus compound (circle 13), which are reaction gases necessary for vapor phase growth, at a pressure of several mmTorr, and at the same time, the plasma generator 16 is filled with a carrier such as argon or nitrogen. The gas is turned into plasma and introduced into the reaction chamber 15.
本発明によると、気相成長装置内で、キャリアガスのプ
ラズマのエネルギーと外部の加熱装置５で加熱される加
熱エネルギーと相乗されたエネルギーとによって、反応
ガスの分解が促進されて気相成長が行われることになる
。According to the present invention, in the vapor phase growth apparatus, the decomposition of the reaction gas is promoted by the energy of the plasma of the carrier gas and the heating energy heated by the external heating device 5, which is synergistic, and the vapor phase growth is accelerated. It will be done.
尚、本発明による反応室とプラズマ発生装置を窓によっ
て隔離する理由は、反応ガスであるシランガス及び燐化
合物との混合ガスを直接にプラズマイオン化すると、反
応ガスイオンが基板を衝撃することになり、又シランが
未分解のままで反応することがあって必ずしも良質の膜
を得ることが困難になるからである。The reason why the reaction chamber and the plasma generator according to the present invention are isolated by a window is that if a mixed gas of silane gas and a phosphorus compound, which are reactive gases, is directly plasma ionized, the reactive gas ions will bombard the substrate. Furthermore, silane may react without being decomposed, making it difficult to obtain a good quality film.
本発明により気相成長させた膜層は極めて強固なエネル
ギーで結合しているために、剥離や亀裂を生ずることが
なく良質の成膜が可能になると共に、反応ガスのエネル
ギーが大きいために低温による気相成長も可能になる。Since the film layer grown in vapor phase according to the present invention is bonded with extremely strong energy, it is possible to form a high-quality film without peeling or cracking. vapor phase growth is also possible.
以上詳細に説明したように本発明の気相成長装置を使用
することにより、良質の成膜が可能になって品質が向」
二に供し得るという効果大なるものがある。As explained in detail above, by using the vapor phase growth apparatus of the present invention, it is possible to form a high-quality film and the quality is improved.
There is something very effective that can be used for two purposes.
第１図は本発明の実施例である減圧気相成長装置の模式
断面図、
第２図は、従来の減圧ＣＶＤ装置を説明するための断面
図、
第３図は、減圧ＣＶＤ装置を使用した半導体装置の製造
工程を説明するための断面図、図において、１１は反応
管、１２は反応ガスの供給部、１３は排気孔、１４は基
板、１５は反応室、１６はプラズマ発生装置、１７は窓
、１８はマイクロ波発振器、１９は導波管、２０はマイ
クロ波透過窓をそれぞれ示す。
第１図Fig. 1 is a schematic cross-sectional view of a low-pressure vapor phase growth apparatus which is an embodiment of the present invention, Fig. 2 is a cross-sectional view for explaining a conventional low-pressure CVD apparatus, and Fig. 3 is a schematic cross-sectional view of a low-pressure CVD apparatus using a low-pressure CVD apparatus. 11 is a reaction tube, 12 is a reaction gas supply section, 13 is an exhaust hole, 14 is a substrate, 15 is a reaction chamber, 16 is a plasma generator, 17 is a sectional view for explaining the manufacturing process of a semiconductor device. 18 is a window, 18 is a microwave oscillator, 19 is a waveguide, and 20 is a microwave transmission window. Figure 1
Claims (1)
おいて、反応管内の基板を上記加熱装置によって加熱を
すると共に、反応ガスが導入された該反応管内にプラズ
マ化したキャリアガスを導入して該基板上に気相成長を
行うことを特徴とする気相成長装置。In a low-pressure CVD apparatus having a reaction tube and a heating device outside the reaction tube, the substrate inside the reaction tube is heated by the heating device, and a carrier gas turned into plasma is introduced into the reaction tube into which the reaction gas has been introduced to heat the substrate. A vapor phase growth apparatus characterized by performing vapor phase growth on the top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP961085A JPS61168229A (en) | 1985-01-21 | 1985-01-21 | Apparatus for vapor growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP961085A JPS61168229A (en) | 1985-01-21 | 1985-01-21 | Apparatus for vapor growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61168229A true JPS61168229A (en) | 1986-07-29 |
Family
ID=11725064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP961085A Pending JPS61168229A (en) | 1985-01-21 | 1985-01-21 | Apparatus for vapor growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61168229A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63239923A (en) * | 1987-03-27 | 1988-10-05 | Oki Electric Ind Co Ltd | Organic metal chemical vapor growth method and apparatus thereof |
| US4919077A (en) * | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
-
1985
- 1985-01-21 JP JP961085A patent/JPS61168229A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4919077A (en) * | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
| JPS63239923A (en) * | 1987-03-27 | 1988-10-05 | Oki Electric Ind Co Ltd | Organic metal chemical vapor growth method and apparatus thereof |
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