JPS6116701Y2 - - Google Patents
Info
- Publication number
- JPS6116701Y2 JPS6116701Y2 JP1976038987U JP3898776U JPS6116701Y2 JP S6116701 Y2 JPS6116701 Y2 JP S6116701Y2 JP 1976038987 U JP1976038987 U JP 1976038987U JP 3898776 U JP3898776 U JP 3898776U JP S6116701 Y2 JPS6116701 Y2 JP S6116701Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- continuous metal
- resin
- sealed
- connecting arm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 82
- 229910052751 metal Inorganic materials 0.000 claims description 82
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 4
- 239000008188 pellet Substances 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000010953 base metal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 238000007665 sagging Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Description
【考案の詳細な説明】
この考案は、半導体装置とくに樹脂封止形半導
体装置の製造に用いる連状金属板（一般にはリー
ドフレームとよぶ）に関する。[Detailed Description of the Invention] This invention relates to a continuous metal plate (generally referred to as a lead frame) used for manufacturing semiconductor devices, particularly resin-sealed semiconductor devices.
従来、集積回路（Ｉ・Ｃ）、トランジスタ、サ
イリスタおよびダイオードの製造に、リードフレ
ーム（Lead Frame）とよばれる連状リード又は
連状金属板が、広く使用されている。例えば第１
図に示すリードフレームは、トランジスタやサイ
リスタに広く用いられている典型的なリードフレ
ーム１００の平面図である。 Conventionally, continuous leads or continuous metal plates called lead frames have been widely used in the manufacture of integrated circuits (ICs), transistors, thyristors, and diodes. For example, the first
The illustrated lead frame is a plan view of a typical lead frame 100 widely used in transistors and thyristors.
この従来のリードフレーム１００は、一般に厚
みが0.2mmから厚くても１mm程度のものであり、
銅板または、銅を主材とした金属板を、金型を用
いて、プレスで押し抜いてつくられる。しかし、
電流容量がおよそ10A以上の半導体装置に用いる
リードフレームは、pn接合をもつた半導体ペレ
ツト（素子）に発生する熱を効率よく放熱するた
めと、リードフレームを流れる電流の抵抗を小さ
くするためと、半導体装置の大きさに適した機械
的強度を得る目的のために従来のリードフレーム
１００に比しおよそ10倍である２mm以上の厚い、
リードフレームを用いる必要がある。 This conventional lead frame 100 generally has a thickness of 0.2 mm to 1 mm at most.
It is made by pressing a copper plate or a metal plate mainly made of copper using a mold. but,
Lead frames used in semiconductor devices with a current capacity of approximately 10 A or more are designed to efficiently dissipate heat generated in semiconductor pellets (elements) with pn junctions, and to reduce the resistance of the current flowing through the lead frame. In order to obtain mechanical strength suitable for the size of the semiconductor device, the lead frame 100 is thicker than 2 mm, which is approximately 10 times as thick as the conventional lead frame 100.
It is necessary to use a lead frame.
所で、薄いリードフレームならば、金属板から
金型を用いてリードフレームをつくつても、金型
の押歯が当つた側面とリードフレームの平面と
が、ほぼ直角に交わつて、できる陵が、ほぼ明確
に残り、陵が曲面になるいわゆるダレは、ほとん
ど発生しない。しかしリードフレームの厚みが厚
くなると、このダレが大きくなるのである。即ち
リードフレームの平面と側面が交わつて、できる
陵の部分が大きな曲面となるのである。このよう
な陵の部分が大きな曲面を有するリードフレーム
を用いて半導体装置をつくることは、非常に不適
当なことである。 By the way, if the lead frame is thin, even if the lead frame is made from a metal plate using a mold, the side surface where the push teeth of the mold come into contact with the plane of the lead frame will intersect at almost a right angle, resulting in ridges. , remains almost clearly, and so-called sag, where the ridge becomes a curved surface, almost never occurs. However, as the thickness of the lead frame increases, this sag increases. In other words, the ridges formed when the plane and side surfaces of the lead frame intersect form a large curved surface. It is extremely inappropriate to manufacture a semiconductor device using a lead frame in which the ridge portion has a large curved surface.
次に、具体的に、比較的大きい電流容量用の樹
脂封止形ダイオードを例にとつて大きなダレのあ
る従来の厚いリードフレーム（以下の説明では連
状金属板といつた方が適当と思われるので、リー
ドフレームといわず連状金属板という）がいかに
半導体装置に不適当であるかについて第２図〜第
８図を用いてのべる。 Next, we will take a concrete example of a resin-sealed diode for a relatively large current capacity, and discuss a conventional thick lead frame with large sag (in the following explanation, I think it would be more appropriate to call it a continuous metal plate). 2 to 8, we will discuss how lead frames (not called lead frames but continuous metal plates) are unsuitable for semiconductor devices.
15A用ダイオードペレツトを溶着すべき
（mount すべき）厚い連状（25mm）金属板は銅
または銅を主材とした母金属板を金型で押抜いて
つくるのである。第２図ａが連状金属板２００の
斜視図であり、第２図ａのｂ−ｂ線の切断面
からみた正面図が第２図ｂである。第２図ａ，ｂ
において各金属板（ベース）１は金属板１の側面
２と同一側面をもつ連結腕部３によつて、一方向
にすなわち連結方向につながり連状金属板２００
を形成している。この連状金属板２００は第２図
ｂの矢印４の方向に金型の押歯によつて、押し抜
かれたため押し抜き方向に大きなダレ５が発生し
ている。第２図ａに示す斜視図の断面６にもダレ
５の発生している様子を示す。 The thick continuous (25mm) metal plate to which the 15A diode pellets are to be welded (mounted) is made by punching out a copper or copper-based base metal plate using a die. FIG. 2a is a perspective view of the continuous metal plate 200, and FIG. 2b is a front view taken along the line bb in FIG. 2a. Figure 2 a, b
, each metal plate (base) 1 is connected in one direction, that is, in the connecting direction, by a connecting arm 3 having the same side surface as the side surface 2 of the metal plate 1, resulting in a continuous metal plate 200.
is formed. This continuous metal plate 200 was punched out by the push teeth of the mold in the direction of the arrow 4 in FIG. 2b, so that a large sag 5 occurred in the punching direction. The occurrence of sagging 5 is also shown in the cross section 6 of the perspective view shown in FIG. 2a.
第２図ａ及びｂに示す連状金属板２００のダレ
５のない金属板１の面に、ダイオードペレツト７
を半田を用いて鑞付し、同時にダイオードペレツ
ト７の上に、リード８を半田を用いて鑞付した状
態の斜視図が第３図である。第３図の−線に
おける切断面からみた正面図が第４図である。 A diode pellet 7 is placed on the surface of the metal plate 1 without sagging 5 of the continuous metal plate 200 shown in FIGS. 2a and 2b.
FIG. 3 is a perspective view of the lead 8 being soldered onto the diode pellet 7 at the same time. FIG. 4 is a front view taken from a cut plane taken along the line - in FIG. 3.
第４図において７１，７２は半田層と示す。 In FIG. 4, 71 and 72 are solder layers.
さらに、ダイオードペレツト７と連状金属板２
００の各金属板１の一部とリード８を樹脂封止９
して、第５図に示す斜視図のような連状金属板２
００に複数個の樹脂封止形ダイオードをつくる。 Furthermore, the diode pellet 7 and the continuous metal plate 2
A part of each metal plate 1 of 00 and the lead 8 are sealed with resin 9.
Then, the continuous metal plate 2 as shown in the perspective view shown in FIG.
A plurality of resin-sealed diodes are made in 00.
第６図は、第５図の−線における切断面か
らみた正面図である。連状金属板２００の上に製
造された複数個の樹脂封止されたダイオードは連
結腕部３より切断して、個々の樹脂封止形ダイオ
ードが得られるのである。この連状金属板２００
に製造された樹脂封止形ダイオードを切断する方
法を第７図の断面図について説明する。第７図に
示すごとく、連状金属板２００の樹脂封止部９の
存在しない面、即ちダレ５のある面を下金型１０
に接するように、下金型１０の上に連状金属板２
００をおき、連状金属板２００の樹脂封止されて
いない樹脂封止部の近傍の金属板の上を上金型歯
１１の位置決めを兼ねた押え金型１２でおさえ、
上金型歯１１を矢印１３の方向へ押して、連状金
属板２００の連結腕部３を切断する方法である。
この時、上金型歯１１は、下金型１０と下金型１
０の間に嵌合するように位置あわせがされている
のである。このような切断方法は、一般によく行
われている非常に能率のよい方法である。上記の
切断方法によつて切断された連結腕部３が、どの
ように変化したかを示す図が第８図である。即ち
第８図は連状金属板２００の上に製造された樹脂
封止形ダイオードを連結腕部３から切断した面よ
りみた正面図である。 FIG. 6 is a front view seen from a cut plane taken along the - line in FIG. 5. A plurality of resin-sealed diodes manufactured on the continuous metal plate 200 are cut from the connecting arm 3 to obtain individual resin-sealed diodes. This continuous metal plate 200
A method of cutting a resin-sealed diode manufactured in 1997 will be explained with reference to the cross-sectional view of FIG. As shown in FIG. 7, the surface of the continuous metal plate 200 where the resin sealing portion 9 does not exist, that is, the surface with the sag 5, is placed on the lower mold 10.
The continuous metal plate 2 is placed on the lower mold 10 so as to be in contact with the lower mold 10.
00, and hold down the top of the metal plate in the vicinity of the resin-sealed portion of the continuous metal plate 200 that is not resin-sealed with the presser mold 12 that also serves to position the upper mold teeth 11.
This is a method of cutting the connecting arm portion 3 of the continuous metal plate 200 by pushing the upper mold tooth 11 in the direction of the arrow 13.
At this time, the upper mold tooth 11 is connected to the lower mold 10 and the lower mold 1.
They are aligned so that they fit between the two. This cutting method is a commonly used and very efficient method. FIG. 8 is a diagram showing how the connecting arm portion 3 cut by the above cutting method changes. That is, FIG. 8 is a front view of the resin-sealed diode manufactured on the continuous metal plate 200, as seen from the plane cut away from the connecting arm 3. As shown in FIG.
切断前においては、連結腕部３は、母金属板よ
り金型で押抜いて連状金属板２００をつくつた時
のダレ５があつたが、連状金属板２００を下金型
１０の平らな面におき連結腕部３への上金型歯１
１の矢印１３方向への押切る力によつて、連結腕
部３は、符号１４で示すようなダレが発生し、そ
のため樹脂封止部の一部に空乏部１５ができるの
である。この空乏部１５の発生は、即ち金属板１
の変形を意味するものであり、金属板１に鑞化さ
れたダイオードペレツト７に、歪を与え、時には
ダイオードペレツト７が割れて劣化することがあ
り、また、この空乏部１５より、大気中の湿気
が、樹脂封止部９と金属板１の境界面を通して入
りやすくなり、ダイオードペレツト７の電気的特
性が劣化するという不都合が起るのである。 Before cutting, the connecting arm portion 3 had sag 5 when the continuous metal plate 200 was punched out from the base metal plate with a die, but the continuous metal plate 200 was flattened in the lower die 10. Upper mold tooth 1 to connecting arm 3 on the surface
Due to the pushing force in the direction of arrow 13 of 1, the connecting arm portion 3 sag as shown by reference numeral 14, and as a result, a depletion portion 15 is formed in a part of the resin sealing portion. The occurrence of this depletion portion 15 is caused by
This means deformation of the diode pellet 7 which is soldered to the metal plate 1, and sometimes the diode pellet 7 may crack and deteriorate. Moisture inside tends to enter through the interface between the resin sealing part 9 and the metal plate 1, causing a disadvantage that the electrical characteristics of the diode pellet 7 deteriorate.
こうした、従来の連状金属板２００を用いて半
導体装置を製作した場合、上記のような重大欠陥
が、半導体装置に発生するということがあつた。 When a semiconductor device is manufactured using such a conventional continuous metal plate 200, serious defects as described above may occur in the semiconductor device.
よつて、この考案は、上記のような、重大な欠
陥が発生しないような、比較的厚い連状金属板２
００に適した構造の連状金属板２００を提供しよ
うとするものである。 Therefore, this invention is a relatively thick continuous metal plate 2 that does not cause serious defects as described above.
The present invention aims to provide a continuous metal plate 200 having a structure suitable for 00.
即ち、連状金属板２００を母金属板より金型を
用いて押抜いて製作する時に発生するダレ５が存
在する部分をさけて連状金属板２００の側面２よ
り内側へ入つた部分に連結腕部を２個所以上設け
たことを特長とした連状金属板を提供しようとす
るものである。以下第９図、第１０図を用いてこ
の考案による半導体装置用連状金属板の一実施例
を説明する。 That is, it is connected to the part of the continuous metal plate 200 that goes inward from the side surface 2, avoiding the part where the sagging 5 that occurs when the continuous metal plate 200 is manufactured by punching it out from the base metal plate using a mold. It is an object of the present invention to provide a continuous metal plate characterized by having arm portions at two or more locations. An embodiment of the continuous metal plate for semiconductor devices according to this invention will be described below with reference to FIGS. 9 and 10.
第９図ａは、この考案の一実施例である連状金
属板３００の斜視図である。第９図ｂは第９図ａ
のIxb−Ixb′の切断面よりみた連状金属板３００
の断面図である。第９図ａにおいて１は半導体素
子が載置される半導体素子支持板で、これは平担
な金属板でたとえば２mm位の厚さを有する金属板
がのぞましい。 FIG. 9a is a perspective view of a continuous metal plate 300 that is an embodiment of this invention. Figure 9b is Figure 9a
A continuous metal plate 300 seen from the cut plane of Ixb−Ixb′
FIG. In FIG. 9a, reference numeral 1 denotes a semiconductor element support plate on which a semiconductor element is mounted, and this is a flat metal plate, preferably a metal plate having a thickness of about 2 mm, for example.
３１，３２は連結腕部で、これは上記半導体素
子支持板１より面積が小く複数の半導体素子支持
板１を連結方向に連結するものである。この連結
腕部３１，３２はほゞ平行な２つの腕で構成され
ている。このようにして連状金属板３００が構成
される。 Reference numerals 31 and 32 denote connection arms, which have a smaller area than the semiconductor element support plate 1 and connect the plurality of semiconductor element support plates 1 in the connection direction. The connecting arms 31 and 32 are composed of two substantially parallel arms. In this way, the continuous metal plate 300 is constructed.
この連状金属板３００は、銅または銅を主材と
した母金属板より、従来の方法と同じ方法である
金型を用いて、押し抜いてつくられるので連状金
属板３００の側面２には、大きなダレ５が発生す
る。半導体素子が載置される２つの金属支持板１
をつなぐ２本の連結腕部３１，３２は、ダレ５が
発生している部分よりも金属板（ベース）１の内
側へ設けるのが望しい。即ち２本の連結腕部３
１，３２の最も外側にある側面（最外側面とい
う）２１は、金属板の側面２よりも内側にあり且
つ、２本の連結腕部３１，３２が、金属板の側面
２とほぼ片行に存在するのが、本考案の連状金属
板３００の特長である。 This continuous metal plate 300 is made by punching out copper or a base metal plate mainly made of copper using a mold, which is the same method as the conventional method. , a large sag 5 occurs. Two metal support plates 1 on which semiconductor elements are placed
It is desirable that the two connecting arms 31 and 32 connecting the metal plate (base) 1 be provided inside the metal plate (base) 1 rather than the part where the sagging 5 occurs. That is, two connecting arms 3
The outermost side surface (referred to as the outermost surface) 21 of 1 and 32 is located inside the side surface 2 of the metal plate, and the two connecting arms 31 and 32 are substantially unilateral with the side surface 2 of the metal plate. This is the feature of the continuous metal plate 300 of the present invention.
この連状金属板３００を用いて製作した樹脂封
止形ダイオードを例にとつて、この考案の連状金
属板３００の作用効果についてのべる。 The effects of the continuous metal plate 300 of this invention will be described by taking as an example a resin-sealed diode manufactured using the continuous metal plate 300.
第１０図は、この考案による半導体装置用連状
金属板３００を用いて製作された樹脂封止形ダイ
オードの正面図である。 FIG. 10 is a front view of a resin-sealed diode manufactured using the continuous metal plate 300 for semiconductor devices according to this invention.
連状金属板３００に製造された複数個の樹脂封
止形ダイオードを連結腕部３１，３２より切断し
て、複数個の樹脂封止形ダイオードに分離する方
法は、前述の第７図を用いて説明したものと同じ
である。 A method of cutting a plurality of resin-sealed diodes manufactured on the continuous metal plate 300 from the connecting arms 31 and 32 to separate them into a plurality of resin-sealed diodes is as follows using the above-mentioned FIG. This is the same as explained above.
即ち、第１０図において、下金型１０の上にお
かれた連状金属板３００すなわち半導体素子支持
板１の連結腕部３１，３２は矢印１３の方向への
上金型歯の動きによつて押し切られる。この時、
連結腕部３１，３２が連状金属板３００の半導体
素子支持板１のダレ５の部分をさけた位置に設け
られているので、連結腕部３１，３２の底１６が
下金型の面１７に接しているので、連結腕部３
１，３２の上金型歯による押し切り時に、従来の
連状金属板２００における第８図に示すような大
きなダレ１４が発生して、半導体素子支持板（ベ
ース）１の空乏部１５が発生するようなことはな
い。よつて、この考案による連状金属板３００を
用いて製造した樹脂封止形ダイオードは、連結腕
部３１，３２を切断することによつて内部のダイ
オードペレツトが割れるようなことも、半導体素
子支持板１と樹脂封止部９との間に間隙ができて
その部分より湿気が入つて電気特性が劣化すると
いつた従来の樹脂封止形ダイオードにあつたよう
な欠点はない。 That is, in FIG. 10, the connecting arms 31 and 32 of the continuous metal plate 300 placed on the lower mold 10, that is, the semiconductor element support plate 1, are moved by the movement of the upper mold teeth in the direction of the arrow 13. I feel pushed away. At this time,
Since the connecting arms 31 and 32 are provided at positions that avoid the sag 5 of the semiconductor element support plate 1 of the continuous metal plate 300, the bottoms 16 of the connecting arms 31 and 32 are connected to the surface 17 of the lower mold. Since it is in contact with the connecting arm 3
When the upper mold teeth 1 and 32 are used to press and cut, a large sag 14 as shown in FIG. 8 occurs in the conventional continuous metal plate 200, and a depletion portion 15 in the semiconductor element support plate (base) 1 is generated. There is no such thing. Therefore, the resin-sealed diode manufactured using the continuous metal plate 300 according to this invention does not cause the internal diode pellet to crack when the connecting arms 31 and 32 are cut, and the semiconductor element. It does not have the drawbacks of conventional resin-sealed diodes, such as a gap between the support plate 1 and the resin-sealed portion 9, where moisture enters and deteriorates electrical characteristics.
しかも２つの半導体素子支持板１の間に２本の
連結腕部３１，３２があるので、第９図ａの矢印
１８，１９のように、連状金属板３００の側面２
に平行な力が加わつても、連状金板３００が曲が
り、変形しにくいという従来の連状金属板２００
がもつている特長をこの考案の連状金属板３００
も、もつている。 Moreover, since there are two connecting arms 31 and 32 between the two semiconductor element support plates 1, the side surfaces 2 of the continuous metal plate 300 are shown as arrows 18 and 19 in FIG.
The conventional continuous metal plate 200 is difficult to bend and deform even when a parallel force is applied to the continuous metal plate 200.
The continuous metal plate 300 of this invention has the following features:
There are also.
もし、連結腕部３１，３２が一本であると第９
図ａの矢印１８，１８の力が加わると容易に連状
金属板は曲り、変形するのである。 If there is only one connecting arm 31, 32, the ninth
When the force of arrows 18 and 18 in Figure A is applied, the continuous metal plate easily bends and deforms.
この考案においては、連結腕部３１，３２の巾
ｔは連状金属板３００の厚みＴよりもうすいこと
がのぞましいことは上記の説明からも明らかであ
り、具体的には、この考案は厚みＴがおよそ２mm
以上の連状金属板に適用すると非常に有効である
ことが実験によつて確められている。 In this invention, it is clear from the above description that it is desirable that the width t of the connecting arms 31 and 32 is smaller than the thickness T of the continuous metal plate 300. is approximately 2mm
It has been confirmed through experiments that it is very effective when applied to the above continuous metal plates.
第１図は従来のリードフレームの平面図、第２
図ａは従来の連状金属板の斜視図、第２図ｂは従
来の連状金属板の連結腕部の切断面からみた正面
図、第３図は従来の連状金属板にダイオードペレ
ツトとリードを鑞付した状態を示す斜視図、第４
図は従来の連状金属板にダイオードペレツトとリ
ードを鑞付した状態の連結腕部の切断面からみた
正面図、第５図は従来の連状金属板に複数個の樹
脂封止形ダイオードが製造された状態を示す斜視
図、第６図は従来の連状金属板に製造された樹脂
封止形ダイオードの連結腕部の切断面からみた正
面図、第７図は従来の連状金属板に製造された樹
脂封止形ダイオードを連結腕部より切断する方法
を示す図、第８図は従来の連状金属板に製造され
た樹脂封止形ダイオードを連結腕部より切断する
ことによつて発生する欠陥を説明するための図、
第９図ａはこの考案の一実施例である連状金属板
の斜視図、第９図ｂはこの考案による連状金属板
の連結腕部の切断面よりみた正面図、第１０図は
この考案による連状金属板を用いて製造された樹
脂封止形ダイオードを連結腕部より切断すること
によつて、得られた樹脂封止形ダイオードの優れ
た特長を説明するための図である。なお図中同一
符号は同一または相当部分を示す。
図中、１は半導体素子支持板、３１，３２は連
結腕部、３００は連状金属板、２１は連結腕部の
外側面、２は連状金属板の側面。
Figure 1 is a plan view of a conventional lead frame, Figure 2 is a plan view of a conventional lead frame.
Figure a is a perspective view of a conventional continuous metal plate, Figure 2b is a front view of the connecting arm of the conventional continuous metal plate as seen from a cut surface, and Figure 3 is a conventional continuous metal plate with diode pellets. and a perspective view showing the state in which the leads are brazed, No. 4
The figure is a front view of a conventional continuous metal plate with diode pellets and leads brazed, as seen from the cross section of the connecting arm. Figure 5 shows a conventional continuous metal plate with multiple resin-sealed diodes. FIG. 6 is a front view of a connecting arm of a resin-sealed diode manufactured on a conventional continuous metal plate, as seen from a cut surface, and FIG. 7 is a conventional continuous metal plate. A diagram showing a method of cutting a resin-sealed diode manufactured on a plate from a connecting arm. FIG. 8 shows a method for cutting a resin-sealed diode manufactured on a conventional continuous metal plate from a connecting arm. A diagram to explain the defects that occur as a result,
FIG. 9a is a perspective view of a continuous metal plate according to an embodiment of this invention, FIG. 9b is a front view of the connecting arm of the continuous metal plate according to this invention, as seen from a cut surface, and FIG. FIG. 3 is a diagram illustrating the excellent features of a resin-sealed diode obtained by cutting a resin-sealed diode manufactured using a continuous metal plate according to the invention from a connecting arm. Note that the same reference numerals in the figures indicate the same or corresponding parts. In the figure, 1 is a semiconductor element support plate, 31 and 32 are connecting arms, 300 is a continuous metal plate, 21 is an outer surface of the connecting arm, and 2 is a side surface of the continuous metal plate.
Claims (1)
子を囲撓するように樹脂封止部が設けられる複
数の半導体素子支持板が、この支持板より面積
の小さい少なくとも２つの連結腕部によつて連
結方向に配置されてなる連状金属板において、
上記連結腕部はその外側面が上記連状金属板の
連結方向の側面より内側に位置するように設け
られたことを特徴とする半導体装置用連状金属
板。 (2) 連結腕部はほゞ平行な２つの腕で構成するこ
とを特徴とする実用新案登録請求の範囲第１項
記載の半導体装置用連状金属板。 (3) 半導体素子支持板は平担な金属板で構成され
ることを特徴とする実用新案登録請求の範囲第
１項または第２項に記載の半導体装置用連状金
属板。[Claims for Utility Model Registration] (1) A plurality of semiconductor element support plates to which semiconductor elements are directly fixed and resin sealing parts provided to surround the semiconductor elements are at least In a continuous metal plate arranged in a connecting direction by two connecting arms,
A continuous metal plate for a semiconductor device, characterized in that the connecting arm portion is provided such that its outer surface is located inside the side surface of the continuous metal plate in the connection direction. (2) The continuous metal plate for a semiconductor device according to claim 1, wherein the connecting arm portion is composed of two substantially parallel arms. (3) The continuous metal plate for a semiconductor device according to claim 1 or 2, wherein the semiconductor element support plate is composed of a flat metal plate.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976038987U JPS6116701Y2 (en) | 1976-03-31 | 1976-03-31 | |
| DE2714145A DE2714145C2 (en) | 1976-03-31 | 1977-03-30 | Stamped metal carrier plate for the production of plastic-coated semiconductor components |
| CA275,206A CA1079868A (en) | 1976-03-31 | 1977-03-31 | Plastic encapsulated semiconductor devices and method of making same |
| US06/011,639 US4283838A (en) | 1976-03-31 | 1979-02-12 | Method of making plastic encapsulated semiconductor devices |
| CA344,749A CA1108773A (en) | 1976-03-31 | 1980-01-30 | Plastic encapsulated semiconductor devices and method of making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976038987U JPS6116701Y2 (en) | 1976-03-31 | 1976-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52130677U JPS52130677U (en) | 1977-10-04 |
| JPS6116701Y2 true JPS6116701Y2 (en) | 1986-05-22 |
Family
ID=28498161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1976038987U Expired JPS6116701Y2 (en) | 1976-03-31 | 1976-03-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6116701Y2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4988476A (en) * | 1972-12-26 | 1974-08-23 |
-
1976
- 1976-03-31 JP JP1976038987U patent/JPS6116701Y2/ja not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4988476A (en) * | 1972-12-26 | 1974-08-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52130677U (en) | 1977-10-04 |
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