JPS61163342A - Method for removing photoresist - Google Patents

Method for removing photoresist

Info

Publication number
JPS61163342A
JPS61163342A JP318085A JP318085A JPS61163342A JP S61163342 A JPS61163342 A JP S61163342A JP 318085 A JP318085 A JP 318085A JP 318085 A JP318085 A JP 318085A JP S61163342 A JPS61163342 A JP S61163342A
Authority
JP
Japan
Prior art keywords
photoresist
film
stamper
photoresist film
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP318085A
Other languages
Japanese (ja)
Inventor
Hideki Segawa
秀樹 瀬川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP318085A priority Critical patent/JPS61163342A/en
Publication of JPS61163342A publication Critical patent/JPS61163342A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Abstract

PURPOSE:To enable a photoresist film to be removed down to a desired thickness without damaging an attached face by immersing an intermediate work into a photoresist-removing soln. and irradiating it with UV rays in a chamber filled with O2. CONSTITUTION:The intermediate work II composed of the photoresist film 2, a thin metal film 4, and an electroformed plate 5 is formed in a step for forming a stamper III. The photoresist film 2 of this work II is implanted with the metal of the film 4 by the sputtering method to make it difficult to remove the film 2 by the usual method. To solve this problem, the work II is immersed into the photoresist-removing soln. to remove most of the film 2, and it is placed in this state into the chamber filled with O2 to irradiate it with UV rays for about 15min, thus permitting the photoresist film 2 to be removed down to an intended film thickness of <=10Angstrom without damaging the attached face.

Description

【発明の詳細な説明】 11i! 本発明はフォトレジスト除去方法に関し、より詳細には
、光学的情報記録盤やIC,LSIの作製等、フォトリ
ソグラフィー技術を用いる分野全般に適用可能なフォト
レジスト除去方法に関するものである。
[Detailed Description of the Invention] 11i! The present invention relates to a photoresist removal method, and more particularly to a photoresist removal method that can be applied to all fields using photolithography technology, such as the production of optical information recording disks, ICs, and LSIs.

従m 通常、フォトレジストを除去する場合は、まず、従来使
用されているフォトレジスト除去液又はアセトン等の溶
剤中に浸漬する方法が採用される。
Normally, when removing a photoresist, a method of immersing it in a conventionally used photoresist removal solution or a solvent such as acetone is usually adopted.

然るに、光ディスクのスタンパ作製工程の如く、フォト
レジスト上にスパッタ法により形成された金属膜からそ
のフォトレジストを除去する場合。
However, when the photoresist is removed from a metal film formed by sputtering on the photoresist, such as in the process of manufacturing a stamper for an optical disk.

金属膜がフォトレジストの表面層にスパッタ法で打ち込
まれている為か、30〜150人程度のフォトレジスト
膜が除去されずに残る。この厚さのフォトレジスト膜が
スタンパ上に残ると、光ディスクを成形する際にフォト
レジスト残膜と光デイスク材料が剥離し難くなり、離型
の際にその部分が欠落するという不都合が生じる。
Approximately 30 to 150 portions of the photoresist film remain unremoved, probably because the metal film is implanted into the surface layer of the photoresist using a sputtering method. If a photoresist film of this thickness remains on the stamper, it will be difficult to separate the remaining photoresist film from the optical disc material when molding an optical disc, resulting in the inconvenience that the part will be missing when the mold is released.

上記の如きフォトレジスト残膜を生じさせない除去方法
の一つに、プラズマアッシャ−法があるが、この方法で
は、プラズマの安定化が難しく、且つ、処理時間が超過
するとスタンパ表面を変質させる虞がある。この他、上
記浸漬法とスクラバー処理を併用する方法や上記浸漬法
と超音波処理を併用する方法も有効であるが、前者の方
法ではブラシを圧接させる為にスタンパを変形させる虞
があり、後者の方法ではフォトレジストの残膜が生じな
い様に超音波の出力を上げるとスタンパ表面にダメージ
を与え易い。
One of the removal methods that does not cause the photoresist residual film described above is the plasma asher method, but with this method, it is difficult to stabilize the plasma, and if the processing time is exceeded, there is a risk of deteriorating the stamper surface. be. In addition, methods that use the above-mentioned immersion method and scrubber treatment in combination, and methods that use the above-mentioned immersion method and ultrasonic treatment in combination are also effective, but the former method has the risk of deforming the stamper in order to press the brush, and the latter method In the method described above, if the ultrasonic output is increased to avoid leaving a photoresist film, the stamper surface is likely to be damaged.

l−煎 本発明は、以上の点に鑑みなされたものであって、付着
表面に悪影響を及ぼすことなく付着するフォトレジスト
を無害な程度まで容易に除去可能なフォトレジスト除去
方法を提供する事を目的とする。
The present invention has been made in view of the above points, and it is an object of the present invention to provide a photoresist removal method that can easily remove adhering photoresist to a harmless extent without adversely affecting the adhering surface. purpose.

叢−」久 本発明は、上記の目的を達成させるため、原型からスタ
ンパを作製する工程等での不要となったフォトレジスト
の除去方法において、フォトレジスト力く付着した工作
物をフォトレジストに対し溶剤として作用する液体から
成るフォトレジスト除去液中に浸漬し、前記フォトレジ
スト除去液から引き上げた前記工作物を酸素ガスを満た
したチャンバー内に収容した状態で該工作物に紫外線を
適正時間照射することを特徴としたものである。
In order to achieve the above object, the present invention provides a method for removing unnecessary photoresist in the process of manufacturing a stamper from a prototype, etc. by removing a workpiece to which the photoresist is strongly adhered, using a solvent to remove the photoresist. irradiating the workpiece with ultraviolet rays for an appropriate period of time while the workpiece is immersed in a photoresist removal solution consisting of a liquid that acts as a photoresist removal solution and pulled out of the photoresist removal solution and placed in a chamber filled with oxygen gas; It is characterized by

以下1本発明の1実施例に基づき具体的に説明する。第
1図乃至第8図は2本発明の1実施例としての光デイス
ク製作工程を主要段階に分けて示した各段階毎の模式的
説明図である。
A detailed description will be given below based on one embodiment of the present invention. FIGS. 1 to 8 are schematic explanatory diagrams showing each main stage of an optical disk manufacturing process according to an embodiment of the present invention.

先ず、第1図に示す如く、所定の例えば円盤状に形成さ
れたガラス等から成る基板1を準備し、その高い平面度
を有する表面上に感光性のフォトレジストを本例ではス
ピナー法で塗布して層厚が約1000人で均一なフォト
レジスト膜2を積層する。
First, as shown in FIG. 1, a predetermined substrate 1 made of glass or the like formed into a disk shape is prepared, and a photosensitive photoresist is applied onto its highly flat surface using a spinner method in this example. Then, a photoresist film 2 having a uniform layer thickness of approximately 1000 layers is laminated.

次に、第2図に示す如く、フォトレジスト膜2上に例え
ば情報に応じて強度変調されたレーザ光等の信号媒体S
を投射し、情報を記録する。この後、情報が露光記録さ
れたフォトレジスト膜2を現像処理して、第3図に示す
如く情報に対応したプリフォーマット及びプレグルーブ
から成る信号溝(ピット)3を形成し、レジスト原盤I
を得る。
Next, as shown in FIG. 2, a signal medium S such as a laser beam whose intensity is modulated according to information is placed on the photoresist film 2.
and record information. Thereafter, the photoresist film 2 on which information has been exposed and recorded is developed to form signal grooves (pits) 3 consisting of preformats and pregrooves corresponding to the information as shown in FIG.
get.

次いで、上記のレジスト原盤Iの表面上に金属材料から
成る薄膜4を被着する9本例では、金属材料としてニッ
ケルを用い、スパッタ法で膜厚が約500〜1000人
の金属薄膜4を被着形成する0次に、第5図に示す如く
、上記金属薄膜4を陰極として電鋳法により電鋳板5を
その表面に被着する。
Next, in this example, a thin film 4 made of a metal material is deposited on the surface of the resist master I. Nickel is used as the metal material, and the thin metal film 4 is coated with a thickness of about 500 to 1000 by sputtering. Next, as shown in FIG. 5, an electroformed plate 5 is deposited on the surface of the thin metal film 4 by electroforming using the metal thin film 4 as a cathode.

この後、電鋳板5と金属薄膜4及びフォトレジスト膜2
を一体として前述したガラス基板1から剥離させ、第6
図に示される中間工作物■が得られる。
After this, the electroformed plate 5, the metal thin film 4 and the photoresist film 2
are peeled off from the glass substrate 1 described above as one body, and the sixth
The intermediate workpiece ① shown in the figure is obtained.

而して、上記中間工作物■からフォトレジスト膜2を除
去すれば第7図に示される如き光デイスク成形用スタン
パ■が出来上がる。ところで、本例の如くガラス基板1
上にスピナー法等で被着されたフォトレジスト膜2の場
合は1通常、従来使用されているフォトレジスト用溶剤
から成る除去液に適正時間浸漬させれば、膜厚が約10
Å以下になるまでフォトレジスト膜2を除去できる。然
るに、上述した如くスパッタ法で金属薄膜4をフォトレ
ジスト膜上に被着した本例の場合は、フォトレジスト除
去液に浸漬しても充分に除去できず、30〜100人程
度のフォトレジスト膜2が残存してしまう。これは、ス
パッタ法により、薄膜4の金属材料がフォトレジスト膜
2の表層部に打ち込まれる為であると考えられる。
Then, by removing the photoresist film 2 from the intermediate workpiece (1), a stamper (2) for forming an optical disk as shown in FIG. 7 is completed. By the way, as in this example, the glass substrate 1
In the case of a photoresist film 2 deposited on top by a spinner method or the like, the film thickness can be reduced to approximately 10 mm by immersing it in a removal solution made of a conventionally used photoresist solvent for an appropriate time.
The photoresist film 2 can be removed until the thickness becomes less than .ANG. However, in the case of this example in which the metal thin film 4 was deposited on the photoresist film by the sputtering method as described above, it could not be removed sufficiently even when immersed in the photoresist removal solution, and about 30 to 100 people removed the photoresist film. 2 will remain. This is considered to be because the metal material of the thin film 4 is implanted into the surface layer of the photoresist film 2 by the sputtering method.

上述した30〜100人程度のフォトレジスト膜2がス
タンパ■の成形面4a上に残存した場合、このスタンパ
■で光ディスクを成形する際に光デイスク材料としての
例えば紫外線硬化樹脂(2P)等との離型性が悪くなる
。従って、第8図に示す如く、アクリル基板6上に表面
層としての紫外線硬化樹脂層7を積層してなる光ディス
ク■をスタンパ■で成形する際に、離型性が悪化してい
るにも拘らず無理に離型しようとすると、スタンパ■の
フォトレジスト膜2′が残存する成形面4aに対応する
紫外線硬化樹脂層7に欠落部りが生じる。
If the above-mentioned photoresist film 2 of about 30 to 100 layers remains on the molding surface 4a of the stamper (2), when molding an optical disc with this stamper (2), it will not be possible to mix it with the optical disc material such as ultraviolet curing resin (2P) etc. Mold releasability deteriorates. Therefore, as shown in FIG. 8, when molding an optical disc (2) formed by laminating an ultraviolet curable resin layer 7 as a surface layer on an acrylic substrate 6 with a stamper (2), the mold releasability is deteriorated. If an attempt is made to forcefully release the mold, a missing portion will be created in the ultraviolet curable resin layer 7 corresponding to the molding surface 4a where the photoresist film 2' of the stamper 2 remains.

本願発明者は、実験的に、スタンパ■と紫外線硬化樹脂
層7との離型が欠落部り等を生じさせずに支障無〈実施
される為には、残存フォトレジスト膜2″の膜厚が約1
.0Å以下となるまでフォトレジスト膜2を除去するこ
とが必要であることを把握した。そこで、以下に示す如
き方法を用いて、中間工作物■におけるフォトレジスト
膜2(第6図)をその残存膜厚が10Å以下になるまで
確実に除去する。
The inventor of the present application has experimentally determined that the mold release between the stamper ① and the ultraviolet curable resin layer 7 does not cause any missing parts, etc., and there is no problem. is about 1
.. It was found that it was necessary to remove the photoresist film 2 until the thickness became 0 Å or less. Therefore, using the method shown below, the photoresist film 2 (FIG. 6) on the intermediate workpiece (1) is reliably removed until the remaining film thickness becomes 10 Å or less.

先ず、例えばジエチレングリコールモノブチルエーテル
やアセトン等の通常のフォトレジスト除去液中に、上述
した中間工作物■を浸漬して大略のフォトレジスト膜2
を除去し、その残存膜厚を約200Å以下まで減少させ
る。この場合、約5分間の浸漬で、充分に残存膜厚を2
00Å以下とすることができる1次に、こうして得られ
た200Å以下のフォトレジスト膜が残存する未完成ス
タンパを、酸素ガス(o2)を満たしたチャンバ内に収
容し、ここで水銀灯等により紫外線を約15分間照射す
る。これにより、スタンパ■の金属薄膜4から成る成形
面に損傷や変質等のダメージを与えることなく、フォト
レジスト膜が目標とする10Å以下の膜厚まで除去され
る。これは、チャンバ内の酸素ガスが紫外線によりオゾ
ン化され、このオゾンが残存膜が10Å以下と成るまで
フォトレジスト膜を除去することによるものと考えられ
る。
First, the above-mentioned intermediate workpiece (2) is immersed in a normal photoresist removal solution such as diethylene glycol monobutyl ether or acetone, and a rough photoresist film 2 is removed.
is removed to reduce the remaining film thickness to about 200 Å or less. In this case, immersion for about 5 minutes is enough to reduce the remaining film thickness by 2
00 Å or less First, the thus obtained unfinished stamper with a remaining photoresist film of 200 Å or less is placed in a chamber filled with oxygen gas (O2), and exposed to ultraviolet rays using a mercury lamp or the like. Irradiate for about 15 minutes. As a result, the photoresist film is removed to the target thickness of 10 Å or less without causing any damage or deterioration to the molding surface of the stamper (2), which is made of the metal thin film 4. This is thought to be because the oxygen gas in the chamber is converted into ozone by ultraviolet rays, and this ozone removes the photoresist film until the remaining film becomes less than 10 Å thick.

この場合、紫外線照射工程のみで例えば1000人程度
O7ォトレジスト膜を10Å以下まで除去しようとする
と、約10時間以上の照射時間を必要とするから、実用
的でない。
In this case, if an attempt is made to remove an O7 photoresist film of, for example, 1000 people to a thickness of 10 Å or less using only the ultraviolet irradiation process, it will require an irradiation time of about 10 hours or more, which is not practical.

以上の如くして得られたスタンパ■を用いれば、欠落部
り等を発生させず正確に情報が記録された所望の光ディ
スクを容易に成形することができる。
By using the stamper (2) obtained as described above, it is possible to easily mold a desired optical disc on which information is accurately recorded without causing any missing parts or the like.

尚、上記説明中のフォトレジストの膜厚は、全てエリプ
ソメータによる測定値である。
Note that all the film thicknesses of the photoresist in the above description are values measured using an ellipsometer.

紘−果 以上、詳述した如く1本発明によれば、フォトレジスト
除去液に浸漬した後酸素ガスを満たしたチャンバ内で紫
外線を適正時間照射することにより、フォトレジストの
付着面にダメージを与えること無く所望の程度まで容易
にフォトレジストを除去することが可能となる。従って
、本発明を光ディスクの製作工程に適用すれば、フォト
レジストが無害な程度まで除去された高性能のスタンパ
を容易に得ることができ、情報が正確に記録された高品
質な光ディスクを安価に製作することができる。尚、本
発明は上記の特定の実施例に限定されるものではなく、
本発明の技術的範囲内において種々の変形が可能である
ことは勿論である1例えば1本発明は、光ディスクだけ
でなくICやLSI等の作製工程におけるフォトレジス
ト除去に適用できる。
As detailed above, according to the present invention, the surface to which the photoresist is attached is damaged by irradiating it with ultraviolet rays for an appropriate period of time in a chamber filled with oxygen gas after being immersed in a photoresist removal solution. It becomes possible to easily remove the photoresist to a desired extent without any problems. Therefore, by applying the present invention to the manufacturing process of optical discs, it is possible to easily obtain high-performance stampers from which photoresist has been removed to a harmless extent, and to produce high-quality optical discs on which information is accurately recorded at low cost. It can be manufactured. It should be noted that the present invention is not limited to the above specific embodiments,
Of course, various modifications are possible within the technical scope of the present invention. For example, the present invention can be applied to photoresist removal in the manufacturing process of not only optical discs but also ICs, LSIs, and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第8図は夫々本発明の1実施例としての光デ
イスク製作工程を主要段階毎に示した各段階についての
模式的説明図である。 (符号の説明) 1: 基板 2: フォトレジスト膜 4: 金属薄膜 ■=、レジスト原盤 ■: 中間工作物 ■: スタンパ ■: 光ディスク
1 to 8 are schematic explanatory diagrams showing each main stage of an optical disk manufacturing process as an embodiment of the present invention. (Explanation of symbols) 1: Substrate 2: Photoresist film 4: Metal thin film ■=, resist master ■: Intermediate workpiece ■: Stamper ■: Optical disk

Claims (1)

【特許請求の範囲】 1、原型からスタンパを作製する工程等での不要となっ
たフォトレジストの除去方法において、フォトレジスト
が付着した工作物をフォトレジストに対し溶剤として作
用する液体から成るフォトレジスト除去液中に浸漬し、
前記フォトレジスト除去液から引き上げた前記工作物を
酸素ガスを満たしたチャンバー内に収容した状態で該工
作物に紫外線を適正時間照射することを特徴とするフォ
トレジスト除去方法。 2、上記第1項において、前記フォトレジスト除去液は
ジエチレングリコールモノブチルエーテルであることを
特徴とするフォトレジスト除去方法。 3、上記第1項において、前記フォトレジスト除去液は
アセトンであることを特徴とするフォトレジスト除去方
法。
[Scope of Claims] 1. In a method for removing unnecessary photoresist in the process of manufacturing a stamper from a master model, a workpiece to which photoresist is attached is removed from a photoresist consisting of a liquid that acts as a solvent for the photoresist. immersed in removal solution,
A method for removing photoresist, which comprises irradiating the workpiece with ultraviolet rays for an appropriate period of time while the workpiece has been pulled out of the photoresist removal solution and is housed in a chamber filled with oxygen gas. 2. The photoresist removal method according to item 1 above, wherein the photoresist removal liquid is diethylene glycol monobutyl ether. 3. The photoresist removal method according to item 1 above, wherein the photoresist removal liquid is acetone.
JP318085A 1985-01-14 1985-01-14 Method for removing photoresist Pending JPS61163342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP318085A JPS61163342A (en) 1985-01-14 1985-01-14 Method for removing photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP318085A JPS61163342A (en) 1985-01-14 1985-01-14 Method for removing photoresist

Publications (1)

Publication Number Publication Date
JPS61163342A true JPS61163342A (en) 1986-07-24

Family

ID=11550187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP318085A Pending JPS61163342A (en) 1985-01-14 1985-01-14 Method for removing photoresist

Country Status (1)

Country Link
JP (1) JPS61163342A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115304U (en) * 1986-01-14 1987-07-22
US5407788A (en) * 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503958A (en) * 1972-08-18 1975-01-16
JPS5339127A (en) * 1976-09-21 1978-04-10 Fuji Yakuhin Kogyo Kk Photo resist frilling agent
JPS5424020A (en) * 1977-07-26 1979-02-23 Tokyo Ouka Kougiyou Kk Method of removing resist material
JPS57163236A (en) * 1981-03-31 1982-10-07 Hitachi Chem Co Ltd Peeling solution for use in photocured film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS503958A (en) * 1972-08-18 1975-01-16
JPS5339127A (en) * 1976-09-21 1978-04-10 Fuji Yakuhin Kogyo Kk Photo resist frilling agent
JPS5424020A (en) * 1977-07-26 1979-02-23 Tokyo Ouka Kougiyou Kk Method of removing resist material
JPS57163236A (en) * 1981-03-31 1982-10-07 Hitachi Chem Co Ltd Peeling solution for use in photocured film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115304U (en) * 1986-01-14 1987-07-22
US5407788A (en) * 1993-06-24 1995-04-18 At&T Corp. Photoresist stripping method

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