JPS61162515A - Resin composition, and resin-encapsulated semiconductor device using thereof - Google Patents

Abstract

PURPOSE:To provide a resin composition for light-receiving semiconductor device absolutely free from the influence of the disturbance of pilot light beam, by adding a pigment transmitting infrared radiation and shielding visible light to a resin composition composed of an epoxy resin, an organic acid anhydride and a cure accelerator. CONSTITUTION:The objective resin composition is produced adding (A) a pig ment transmitting infrared radiation and shielding visible light [preferably 2-phenylcarbamoyl-1, 4-naphthoquinone-4-( 4'-N,N-diethylamin-o-2'-methylphenyl )imine and a red pigment] to a resin composition composed mainly of (B) an epoxy resin and (C) an organic acid anhydride (e.g. tetrahydrophthalic anhydride) as main components, and added with (D) a proper cure accelerator (e.g. imidazolic acid). EFFECT:The bonding of an expensive filter to the semiconductor device is not necessary.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a resin composition and a resin-sealed semiconductor device using the same, and particularly to a resin composition for an infrared receiving element and a resin-sealed semiconductor device using the same. The present invention relates to a light-receiving semiconductor device.

[Conventional technology]

Although the maximum sensitivity of the infrared receiving element is obtained at 900 to 1,000 nm, the receiving wavelength range is 300 to 1.250 nm.
It covers a wide range from visible light to near-infrared light.

On the other hand, the peak wavelength of the light emitting element that sends the signal is 95
It is 0 nm. Therefore, visible light (400-780nm
) causes malfunction as disturbance light to the light receiving element.

To solve this problem, an important technology is to add a visible light blocking function to the infrared receiving element. Conventional methods for adding a visible light blocking function to a light-receiving semiconductor device include adding it to the resin composition that seals the light-receiving element, and attaching an infrared filter to the light-receiving surface of the light-receiving semiconductor device. .

FIGS. 3(a) and 3(b) are a plan view and a cross-sectional view of a resin-sealed light-receiving semiconductor device sealed with a conventional resin composition having a visible light blocking function, and in the figures, 2 is a resin composition,
3 is a light-receiving semiconductor element, and 1&, 1b are externally deposited leads.

4(&) and (b) are a plan view and a cross-sectional view of a conventional resin-sealed light-receiving semiconductor device with an infrared filter attached to the light-receiving surface, and 4 is an infrared filter. be.

Conventional resin compositions contain epoxy resins and acid anhydrides as main components, to which are added curing accelerators, mold release agents, and antioxidants, and further contain red pigments and dark green pigments.

[Problem that the invention seeks to solve]

The visible blocking effect of the resin composition 2 described above was insufficient. FIG. 5 is a wavelength characteristic diagram of the conventional resin composition used in FIG. 3. As is clear from Figure 5, wavelength 7
Although it can block light of 0.00 nm or less, it has been delayed. Therefore, the conventional light-receiving semiconductor device in which the external lead-out leads 1a and 1b to which the light-receiving element is attached as shown in FIG.
In particular, fluorescent lights, incandescent lights, etc. caused malfunctions.

This problem was compensated for by attaching an infrared filter 4 to the light receiving surface of the light receiving semiconductor device as shown in FIG.
Filters are very expensive, and the cost of attaching them is also considerable. Further, because of problems such as the attached filter falling off, conventional light receiving element semiconductor devices are expensive and have insufficient reliability.

The present invention has been made to address the above-mentioned problems, and it is an object of the present invention to provide a high-performance and inexpensive resin-sealed light-receiving element semiconductor device by imparting a desired visible light blocking function to a resin composition and using the same. With the goal.

[Means for solving problems]

The resin composition of the first aspect of the present invention is a resin composition mainly composed of an epoxy resin and an organic acid anhydride, and containing an appropriate curing accelerator, which transmits infrared rays and blocks visible light. It is composed of a functional pigment.

In addition, as pigments that have the function of transmitting infrared rays and blocking visible light, azo-based, quinone-based, metal complex-based dyes and red dyes with a maximum absorption wavelength in the range of 700 to 800 nm, or 2-
Phenylcarbamoyl-1,4-su7toquinone-4-(
The effect can be exhibited by using 4'-N,N-diethylamino-2'-methylphenyl)imine and a red dye.

Moreover, the resin-sealed semiconductor device of the second invention of the present invention includes:
An infrared receiving element is manufactured using a resin composition that is mainly composed of an epoxy resin and an organic acid anhydride, with the addition of an appropriate curing accelerator, and that also contains a dye that has the function of transmitting infrared rays and blocking visible light. Constructed in a sealed manner.

Note that the use of the above-mentioned dyes having the function of transmitting infrared rays and blocking visible light can make the function of the dual light-receiving element more reliable.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a wavelength characteristic diagram of an example of the resin composition of the present invention. In addition, Examples 1 to 4 shown in FIG. 1 are composed of the formulations shown in Table 1. In addition, in Examples 1 to 4, 2-
7-enylcarpamoyl-1,4-naphthoquinone-4(4
'-N,N-diethylamino-2'-methylphenyl)
This method uses imine and changes the amount of imine added.

Table 1 where (6) 2-7enylcarbomoyl-1,4-naphthoquinone-4(4'-N,N-diethylamine-2'
-Methylphenyl)imine has the following chemical structure.

In order to make a resin composition having the composition shown in Table 1 capable of sealing a semiconductor element, it is subjected to the following treatment.

The formulations shown in Table 1 are placed in a reaction vessel whose temperature is controlled to a constant temperature or into a heating mixer roll, and the mixture is homogenized and B-staged while being heated and kneaded. Thereafter, it is cooled to water temperature and crushed into tiles, and then further finely crushed and molded into tablets to obtain a resin composition. This manufacturing method is the same as that for conventional resin compositions. FIG. 1 shows the wavelength characteristics of a 1 mm thick test piece of this resin composition.

FIGS. 2(a) and 2(b) are a plan view and a sectional view of a resin-sealed light-receiving semiconductor device according to an embodiment of the present invention. The resin-sealed light-receiving semiconductor device of this example is manufactured by the following procedure. The light-receiving element 3 is fixed to a predetermined surface of the element fixing lead 1a of the external lead lead 1a using a conductive adhesive or the like, and the element surface electrode and the external lead lb are wire-bonded to prepare a nine-assembly intermediate body.

This assembly intermediate body is sealed with resin composition 5. The sealing method is a transfer molding method. Further, post-finishing is performed to produce the resin-sealed light-receiving semiconductor device shown in FIGS. 2(a) and 2(b).

Examples -1, -2, -3, and -4 can be used depending on the characteristics of the light-receiving element, the characteristics of the light-emitting element as a light source, and the purpose.

In addition, the wavelength characteristics do not change significantly depending on the type and content of compounds other than 2-phenylcarbomoyl-1,4-su7toquinone-4(4'-N,N-diethylamino-2'-methylphenyl)imine. do not have.

Epoxies other than those in Examples 1 to 4 used as formulations of resin compositions include bisphenol AW EVO, alicyclic epoxy, novolac type epoxy, heterocyclic polyfunctional epoxy (e.g., triglycidyl isocyanunate, hydanthrene type epoxy), etc. Even if a mixture thereof is used, or an organic acid anhydride such as HHP methylhymic anhydride or methyl-THPA is used as a curing agent in addition to tetrahydro-7-talic anhydride, the wavelength characteristics of these resin compositions are not the same as in the examples. -1 to 4.As a pigment that transmits infrared rays and blocks visible light, it has heat resistance of 150°C and a maximum absorption wavelength of 700 to 800 nm.Azo type, quinone type, Desired wavelength characteristics can be obtained by combining a metal complex dye and a red dye.

〔Effect of the invention〕

As described above, the light-receiving semiconductor device of this example is sealed with a resin composition that can completely block visible light and efficiently transmit infrared light around 950 nm, so the conventional problems can be avoided. It is completely unaffected by ambient light such as indoor light (incandescent lamps, fluorescent lights). Therefore, there is no need to attach an expensive filter to the semiconductor device of this embodiment.

The present invention greatly contributes to cost reduction and performance improvement of infrared light-receiving semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 is a wavelength characteristic diagram of a resin composition according to an embodiment of the present invention, and FIGS. 2(a) and 2(b) are a plan view and a cross-sectional view of a resin-sealed light-receiving semiconductor device according to an embodiment of the present invention. Figure 3(a). 4) and FIGS. 4(a) and 4(b) are a plan view and a sectional view of a conventional resin-sealed light-receiving semiconductor device, and FIG. 5 is a wavelength characteristic diagram of an example of a conventional resin composition. 1m, 1b...External extraction lead, 2...
... Resin composition, 3... Light-receiving semiconductor element, 4.
...Infrared filter, 5...Resin composition. Agent: Susumu Uchihara, Patent Attorney, Pa'Taka゛〔3,-
′ Wavelength θ 2 Heart 1 Diagram

Claims (6)

[Claims] (1) A resin composition containing an epoxy resin and an organic acid anhydride as main components and an appropriate curing accelerator, containing a dye that transmits infrared rays and blocks visible light. Characteristic resin composition. (2) A claim that uses an azo-based, quinone-based, or metal complex-based dye and a red dye with a maximum absorption wavelength in the range of 700 to 800 nm as a dye that has the function of transmitting infrared rays and blocking visible light. The resin composition described in (1). (3) 2-phenylcarpamoyl-1,4-naphthoquinone-4-(4'-N,N-diethylamino-2'-
A resin composition according to claim (1), which uses methylphenyl)imine and a red dye. (4) Using a resin composition containing an epoxy resin and an organic acid anhydride as main components, adding an appropriate curing accelerator, and containing a dye that has the function of transmitting infrared rays and blocking visible light, A resin-sealed semiconductor device with a light-receiving element sealed. (5) A claim that uses an azo-based, quinone-based, or metal complex-based dye and a red dye with a maximum absorption wavelength in the range of 700 to 800 nm as a dye that has the function of transmitting infrared rays and blocking visible light. The resin-sealed semiconductor device according to item (4). (6) 2-phenicarpamoyl-1,4-naphthoquinone 4-(4'-N,N-diethylamino-2'-methylphenyl)imine as a dye that has the function of transmitting infrared rays and blocking visible light; A resin-sealed semiconductor device according to claim (4), which uses a red dye.