JPS61159366U - - Google Patents

Info

Publication number
JPS61159366U
JPS61159366U JP1985040741U JP4074185U JPS61159366U JP S61159366 U JPS61159366 U JP S61159366U JP 1985040741 U JP1985040741 U JP 1985040741U JP 4074185 U JP4074185 U JP 4074185U JP S61159366 U JPS61159366 U JP S61159366U
Authority
JP
Japan
Prior art keywords
thin film
mask
forming
workpiece
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985040741U
Other languages
English (en)
Other versions
JPH0348204Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985040741U priority Critical patent/JPH0348204Y2/ja
Priority to US06/824,631 priority patent/US4704306A/en
Publication of JPS61159366U publication Critical patent/JPS61159366U/ja
Application granted granted Critical
Publication of JPH0348204Y2 publication Critical patent/JPH0348204Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Description

【図面の簡単な説明】
第１図は、この考案の一実施例を説明するため
の断面図である。第１Ａ図は、第１図に示した実
施例の薄膜形成時の状態を示す断面図である。第
２図は、この考案の他の実施例を設明するための
断面図である。第３図は、従来の薄膜形成用マス
クの一例を説明するための断面図である。第４図
は、第３図に示した薄膜形成用マスクの問題点を
説明するための断面図である。第５図は、この考
案が有利に適用される被処理物自身が撓む構造の
一例を示す平面図である。第６図は、第５図の
―線に沿う断面図である。第７図は、第５図お
よび第６図に示した構造に薄膜を形成する際の問
題点を説明するための略図的側面図である。 図において、４は被処理物、１１は薄膜形成用
マスクを示す。
補正 昭６１．４．２８ 実用新案登録請求の範囲を次のように補正する
。
【実用新案登録請求の範囲】 薄膜形成にあたり薄膜を形成される被処理物に
取付けられるマスクであつて、薄膜形成時の温度
域にて中央部が該被処理物側に突出するように撓
むバイメタル部材よりなることを特徴とする、薄
膜形成用マスク。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 薄膜形成にあたり薄膜を形成される被処理
    物に取付けられるマスクであつて、薄膜形成時の
    温度域にて中央部が該被処理物側に突出するよう
    に撓む部材よりなることを特徴とする、薄膜形成
    用マスク。 (2) 前記部材は、バイメタルにより構成されて
    いる、実用新案登録請求の範囲第１項記載の薄膜
    形成用マスク。 (3) 前記部材は、形状記憶合金よりなる、実用
    新案登録請求の範囲第１項記載の薄膜形成用マス
    ク。
JP1985040741U 1985-03-20 1985-03-20 Expired JPH0348204Y2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1985040741U JPH0348204Y2 (ja) 1985-03-20 1985-03-20
US06/824,631 US4704306A (en) 1985-03-20 1986-01-31 Method and mask for forming thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985040741U JPH0348204Y2 (ja) 1985-03-20 1985-03-20

Publications (2)

Publication Number Publication Date
JPS61159366U true JPS61159366U (ja) 1986-10-02
JPH0348204Y2 JPH0348204Y2 (ja) 1991-10-15

Family

ID=12589057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985040741U Expired JPH0348204Y2 (ja) 1985-03-20 1985-03-20

Country Status (2)

Country Link
US (1) US4704306A (ja)
JP (1) JPH0348204Y2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000129419A (ja) * 1998-10-22 2000-05-09 Hokuriku Electric Ind Co Ltd 蒸着マスク
JP2007051342A (ja) * 2005-08-18 2007-03-01 Toyota Industries Corp フレーム
WO2014002841A1 (ja) * 2012-06-26 2014-01-03 シャープ株式会社 マスクフレーム

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389397A (en) * 1989-08-29 1995-02-14 North American Philips Corporation Method for controlling the thickness distribution of a deposited layer
JP3446835B2 (ja) * 1991-03-27 2003-09-16 Ｈｏｙａ株式会社 ガラス光学素子用プレス成形型
US5264376A (en) * 1991-06-24 1993-11-23 Texas Instruments Incorporated Method of making a thin film solar cell
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
IL102120A (en) * 1992-06-05 1994-08-26 Persys Technology Ltd Mask, assembly and method that enable quality control of equipment for the production of semiconductor slice chips
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
EP0682125A1 (en) * 1994-05-11 1995-11-15 Applied Materials, Inc. Controlling material sputtered from a target
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US5750272A (en) * 1995-02-10 1998-05-12 The Research Foundation Of State University Of New York Active and adaptive damping devices for shock and noise suppression
US5669977A (en) * 1995-12-22 1997-09-23 Lam Research Corporation Shape memory alloy lift pins for semiconductor processing equipment
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
US6168832B1 (en) 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness
GB9701114D0 (en) * 1997-01-20 1997-03-12 Coherent Optics Europ Ltd Three-dimensional masking method for control of optical coating thickness
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
JP2004055971A (ja) * 2002-07-23 2004-02-19 Pentax Corp 撮像素子
KR100868854B1 (ko) * 2002-08-29 2008-11-14 오리온오엘이디 주식회사 마스크 지지판
US7179335B2 (en) * 2002-10-28 2007-02-20 Finisar Corporation In situ adaptive masks
DK1630260T3 (da) * 2004-08-20 2011-10-31 Jds Uniphase Inc Magnetisk holdemekanisme til et dampudfældningssystem
KR102330330B1 (ko) * 2014-12-16 2021-11-25 삼성디스플레이 주식회사 마스크 프레임 조립체 및 그 제조방법
CN104498871B (zh) * 2015-01-14 2017-04-12 京东方科技集团股份有限公司 一种掩膜装置及其组装方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520739U (ja) * 1978-07-29 1980-02-09

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2003018A (en) * 1930-09-08 1935-05-28 Gen Plate Co Thermostat
US1987167A (en) * 1933-06-30 1935-01-08 Valverde Robert Bimetal thermostat element
US2675267A (en) * 1952-03-29 1954-04-13 Metals & Controls Corp Thermostatic element
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5520739U (ja) * 1978-07-29 1980-02-09

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000129419A (ja) * 1998-10-22 2000-05-09 Hokuriku Electric Ind Co Ltd 蒸着マスク
JP2007051342A (ja) * 2005-08-18 2007-03-01 Toyota Industries Corp フレーム
WO2014002841A1 (ja) * 2012-06-26 2014-01-03 シャープ株式会社 マスクフレーム

Also Published As

Publication number Publication date
US4704306A (en) 1987-11-03
JPH0348204Y2 (ja) 1991-10-15

Similar Documents

Publication Publication Date Title
JPS61159366U (ja)
JPS6321165U (ja)
JPS6383496U (ja)
JPS599301Y2 (ja) つまみ
JPS6368627U (ja)
JPS63123550U (ja)
JPH0177933U (ja)
JPH0198119U (ja)
JPH0373401U (ja)
JPS63165859U (ja)
JPS61196201U (ja)
JPH0377814U (ja)
JPH01125312U (ja)
JPS6322094U (ja)
JPS63193834U (ja)
JPS63186524U (ja)
JPS6311979U (ja)
JPS6171547U (ja)
JPS60146416U (ja) 形状記憶合金製の指輪
JPS62103022U (ja)
JPS6153928U (ja)
JPS6158342U (ja)
JPS639149U (ja)
JPH0345617U (ja)
JPH0313759U (ja)