JPS61158148A - Manufacture of plasma cvd film - Google Patents

Abstract

PURPOSE:To make it feasible to arbitrarily control the distribution of film thickness and film quantity of plasma CVD film by a method wherein gas is fed under control from gas nozzles to control the material gas flow of plasma CVD film within the space including basic material. CONSTITUTION:After vacuumizing a vacuum vessel 101 utilizing a vacuumm pump 105, the mixed gas comprising compound gas containing the component element of thin film to be formed on the surface of base material 102 and nitrogen is fed to the vacuum vessel 101 through a gas feeding nozzle 104 while the pressure in the vacuum vessel 101 is maintained at the specific reduced level by means of manipulating a butterfly valve 107 and feeding nitrogen gas under control through gas nozzles 112. Besides the basic material 102 is heated under control by a sample table 103. Next low temperature plasma is produced in the space including the basic material 102 by an electrode 108. Finally each nozzle 112 may be arranged to control the nitrogen gas to be fed so that the gas jetted from gas nozzle 104 may not be mixed with the low temperature plasma of material gas.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to plasma OVD (Chemical,
When a plasma CVD film is formed on the surface of a substrate by the VaporDeposition method, the film quality and film thickness distribution of the plasma CVD film are controlled to produce a plasma (]/, D film to be formed on the surface of the substrate. It is about the method.

In the conventional plasma OVD method, a substrate is held in a heated state in a vacuum container, a compound gas containing the constituent elements of the thin film to be formed is supplied into the vacuum container at a constant flow rate, and the pressure in the vacuum container is In this method, a desired plasma CVD film is formed on the surface of a substrate by generating low-temperature plasma in a space containing the substrate while maintaining the vacuum at a predetermined degree of vacuum below atmospheric pressure.

Hereinafter, a conventional plasma CVD film manufacturing method will be described with reference to the drawings.

FIG. 2 shows a conventional plasma CVD apparatus.

+l+ is a vacuum container capable of maintaining a vacuum state, (2) is a base material on which a plasma own film is formed, (3) is a base material (2)
and has a heater inside to heat the base material (
2) A sample stage capable of heating the surface, 3& is a heater mounted inside the sample stage 3, and (4) a gas supply for supplying a compound gas containing the constituent elements of the plasma CVD film to be formed. The gas supply nozzle of the device (5) is a vacuum pump for evacuating the pressure of the vacuum container (1) to a degree of vacuum below atmospheric pressure, and (6) is the vacuum container (1) and the vacuum pump (5). A vacuum exhaust pipe that airtightly connects the
The sword is a butterfly valve for variably controlling the internal resistance of the square tube inside the vacuum container fil, (81 is the vacuum container (1)
), and with the inside of the vacuum container +11 controlled at a predetermined pressure, an electrode (9) is used to generate low-temperature plasma in the space containing the base material (2). The dark wave number is 13.56 NH2 high frequency power supply, fil is,
A matching circuit provided to efficiently supply high-frequency power to the electrode (8) (19 indicates an AC power source that supplies power to the heater 3a).

The operation of a conventional plasma CVD apparatus will be explained.

First, the inside of the vacuum container +11 is pumped by the vacuum pump (5).
After evacuation to a vacuum level of 0 m Torr or less, a compound gas containing the constituent elements of the thin film to be formed on the surface of the substrate (2) is introduced into the vacuum container (1) from the gas supply nozzle (4) of the gas supply device. Introduced and further butterfly valve (7)
The inside of the vacuum container (1) is controlled to the pressure that is the thin film forming condition. Further, the base material (2) is heated and controlled to a predetermined temperature by the sample stage (3). Next, high-frequency power is supplied to one electrode (8) from a high-frequency power source (9) to generate low-temperature plasma in the space including the base material (2). As a result of the above,
A desired plasma (VD film) is formed on the surface of the base material (2).

Problems to be Solved by the Invention However, in the conventional plasma CVD film manufacturing method, the position of the pipe (6) that is the vacuum evacuation system, the position of the gas supply nozzle (4) of the gas supply device, and the gas Depending on the flow rate of the raw material gas supplied from the supply nozzle (4), etc., the effective exhaust speed at each position on the A-A cross section in Fig. 2 differs. As a result, when the plasma CVD film is formed on the surface of the base material (21), the concentration and gas flow of the raw material gas are different.
) had the disadvantage of lowering the film thickness distribution and film quality distribution.

Further, a plasma CV formed on the surface of the base material (2) optionally
D It is very difficult to control the film thickness distribution and film quality distribution of the film.

In this way, in the conventional plasma CVD film manufacturing method,
When forming a film on the surface of the base material beak 21, the concentration of the raw material gas and the gas flow at each position on the surface of the base material 12) cannot be controlled, so the film thickness of the plasma CVD film formed on the surface of the base material (2) cannot be controlled. It has the disadvantage that it is difficult to control the distribution and film quality distribution.

Structure of the Invention The present invention provides a method for disposing a base material in a vacuum container, reducing the pressure in the vacuum container to a predetermined pressure, and injecting a compound gas containing the constituent elements of a plasma OVD thin film to be formed on the surface of the base material, such as monosilane. (S1H4), ammonia (NH3), nitrogen (
By supplying a nitrogen mixed gas at a constant flow rate and supplying nitrogen gas from multiple gas nozzles, a constant force of 0.46 ToτrV is achieved.
While holding c, the base material was controlled to a predetermined temperature of 350°C, and the electrode placed in the vacuum container was heated at 40 to 500 KH.
High-frequency power of 2, 13, 56 MHM or 2.45 GHM is supplied to generate low-temperature plasma in the space containing the base material, and the amount of nitrogen gas introduced from the plurality of gas nozzles is adjusted to the flow of raw material gas for the plasma CVD film. The purpose is to manufacture a plasma CVD film by controlling the gas nozzle so that the gas ejected from the gas nozzle does not mix with the low-temperature plasma of the raw material gas and keeping the exhaust speed constant.

Effect of the present invention: A plurality of gas nozzles are arranged at equal intervals in a vacuum container around a base material, and the gas ejected from the gas nozzles is ejected at each position on the surface of the base material so as not to mix with the low-temperature plasma of the raw material gas. Since the amount introduced is controlled so that the concentration and gas flow of the raw material gas are constant, the film thickness distribution and film quality distribution of the plasma nitride film can be controlled arbitrarily, and the desired plasma SiN film can be formed. .

Embodiments An embodiment of the present invention will be described with reference to the drawings.

FIG. 1 shows a cross-sectional view of a plasma CVD apparatus for carrying out a plasma CVD film manufacturing method according to an embodiment of the present invention.

In the figure, (101) is a vacuum container capable of maintaining a vacuum state, (102) is a base material on which a plasma SiN film is formed, (103) is a sample stage for holding the base material (102), (103a) is a heating device for heating the base material (102) to a predetermined temperature by heating the sample stage (103); (104) is a plasma CV to be formed;
A gas supply nozzle (105) of a gas supply device for supplying a compound gas containing the constituent elements of the D film is a vacuum vessel (1
01) a vacuum pump for evacuating the internal pressure to a degree of vacuum below atmospheric pressure; (106) a vacuum pump that airtightly connects the vacuum container (101) and the vacuum pump (105); (107) is a butterfly valve that variably controls the internal resistance in the vacuum vessel (101), and (tos') is a butterfly valve that introduces raw material gas into the vacuum vessel (101) and ) is controlled to a predetermined pressure, the electrode (109) is used to generate low-temperature plasma in the space containing the base material (102), and the output frequency is 40 to 500 KHz or 13.56 Ml (z or 2.45 GHz high frequency power source, (110) is the electrode (t
(111) is an AC power source that supplies power to the heating device (103a), (112) is arranged at equal intervals in the vacuum container (101), Gas supply nozzle (104) of the gas supply device
) below the sample stage (103) and the pipe (106).
), and the nozzle tip is a heating device (103a).
A gas nozzle located at the bottom and capable of supplying nitrogen gas in a controlled manner is shown.

The operation of the plasma CVD apparatus of the present invention will be explained.

First, the inside of the vacuum container (101) is evacuated to a vacuum level of 50 ya Torr or less using a vacuum pump (1OS), and then a compound gas containing the constituent elements of the thin film to be formed on the surface of the base material (102), that is, monosilane (SiF2
) Mixed gases of ammonia (NH3) and nitrogen (IJ, ') were each mixed with 13 S (ICM, 16500M, 52
A gas flow rate of 500M is introduced into the vacuum container (1al) from the gas supply nozzle (104) of the gas supply device, and the pressure in the vacuum container (101) is controlled by the butterfly valve (107).
) and controlled introduction of nitrogen gas from the gas nozzle (112) to maintain the pressure at 0.46 Torr. In addition, the base material (102) is a sample stage (103) K
Therefore, the heating is controlled to a temperature of 350°C. Next, the electrode (
tOS) is supplied with high frequency power from a high frequency power source (109) to generate low temperature plasma in a space including the base material (102). In this embodiment, the effective pumping speed of the cross section A/ ) and / in FIG. 1 is kept almost constant, and the gas nozzle (112 )
A total of four gas nozzles were arranged, and the amount of nitrogen gas introduced from each gas nozzle was controlled.

By the above operation, a refractive index of 2 is formed on the surface of the base material (102).
．． A plasma silicon nitride (plasma SLN) film with a film thickness distribution of ±3% was able to be formed.

As described above, according to this embodiment, a vacuum container (101) capable of maintaining a vacuum state, a sample stage (103) holding a base material (102), a heating device (103&), a vacuum pump ( los), pipe (106), butterfly nozzle (107), electrode (108), and sample stage (103).
) and the pipe (106).
12), nitrogen gas is controlled and introduced from the gas nozzle (112), and the gas flow of the raw material gas for the plasma nitride film is controlled in the space containing the base material (102). ) It was possible to arbitrarily control the film thickness distribution and film quality distribution of the plasma nitride film formed, and as a result, a desired plasma SiN film could be formed.

Effects of the Invention In the plasma CVD apparatus of the present invention, the button for controlling and introducing gas from the gas nozzle makes it easy to control the gas flow of the raw material gas for the plasma CVD film in the space containing the base material. Therefore, a great practical effect is produced in that the film thickness distribution and film quality distribution of the plasma CVD film formed on the surface of the base material can be controlled.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a plasma CVD apparatus of the present invention, and FIG. 2 is a sectional view of a conventional plasma CVD apparatus. Supply nozzle 105/vacuum pump 106: Pipe 108: Electricity - 109: High frequency electricity #t1o: Matching circuit 111: AC power supply 112: Gas nozzle patent applicant Matsushita Electric Industrial Co., Ltd. Representative Patent Attorney Isao Abe Figure 1 Figure 2 Procedural amendment book■, Indication of case Patent application No. 59-279190 2,
Name of the invention Method for manufacturing plasma CVD films 3 Relationship to the case of the person making the amendment Patent applicant address 3-12-11-6 Minamimachi, Kokubunji-shi, Tokyo 185 Target of amendment Contents of amendment 1 Specification No. 6 Line 7 of the page, “while holding at 0.46 Torr” is changed to “while holding at 0.30 Torr”.
Page 9, line 6 “13 SccM, 16 SaaM
152500M gas flow' to '10 scaM, 3 t saaM, s O50
0M gas flow" and 3. Correct "D, Hold at 46 Torr" on page 9, line 11, to "Hold at 0.30 Torr."

Claims (1)

[Claims] 1. Plasma CV to be formed on the surface of the substrate by arranging a base material in a vacuum container, reducing the pressure in the vacuum container to a predetermined pressure;
D Supplying a mixed gas of a compound gas and a single gas containing the constituent elements of the thin film at a constant flow rate, and controlling the base material to a predetermined temperature while maintaining the pressure at a constant level by supplying nitrogen gas from a plurality of gas nozzles; High-frequency power is supplied to an electrode disposed in the vacuum container to generate low-temperature plasma in a space including the base material, and the amount of gas introduced from the plurality of gas nozzles is controlled so that the exhaust speed is constant. The flow of the raw material gas of the plasma CVD film is controlled, and the plasma C on the surface of the base material is
A method for manufacturing a VD film. 2. The method for producing a plasma CVD film according to claim 1, wherein the composition of the gas introduced through the gas nozzle is a gas containing nitrogen or at least one of the components of the raw material gas for the plasma CVD film. 3. The frequency of the high frequency power is 40 to 500 KHz, 1
The method for manufacturing a plasma CVD film according to claim 1 or 2, wherein the frequency is 3.56 MHz or 2.45 GHz. 4. The method for producing a plasma CVD film according to claim 1, 2, or 3, wherein the gas ejected from the gas nozzle is ejected so as not to mix with the low-temperature plasma of the raw material gas.