JPS61156849A - Thick film resistance element - Google Patents

Thick film resistance element

Info

Publication number
JPS61156849A
JPS61156849A JP59276097A JP27609784A JPS61156849A JP S61156849 A JPS61156849 A JP S61156849A JP 59276097 A JP59276097 A JP 59276097A JP 27609784 A JP27609784 A JP 27609784A JP S61156849 A JPS61156849 A JP S61156849A
Authority
JP
Japan
Prior art keywords
resistor
trimming
thick film
target
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59276097A
Other languages
Japanese (ja)
Inventor
Sadayuki Sone
曾根 貞幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59276097A priority Critical patent/JPS61156849A/en
Publication of JPS61156849A publication Critical patent/JPS61156849A/en
Pending legal-status Critical Current

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  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

PURPOSE:To facilitate the target of characteristics by trimming the titled element, and to improve the strength against power consumption, by a method wherein two resistors with different resistance values are made series via intermediate conductor. CONSTITUTION:This element is provided with a resistor 21 of larger resistance value and a resistor 23 of smaller resistance value formed in series with conductors 24, 25 via intermediate conductor 22. In trimming, in case of large deviation from the target value of characteristics, the resistor 21 is trimmed 26 to the neighborhood of the target value, and the resistor 23 is thereafter trimmed 26 to the center of the target value. This manner enables the sure trimming of even elements of characteristics with narrow target width. Besides, the resistance of the resistor becomes slow in variation, and the remaining width of trimming can be enlarged, resulting in the improvement in strength against power consumption.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は厚膜抵抗素子に関し、特にへイブリッドICの
厚膜基板におけるファンクシ璽ントリミング抵抗として
用いられるものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a thick film resistor element, and in particular to one used as a funxie trimming resistor in a thick film substrate of a hybrid IC.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

従来、ハイブリッドICの厚膜基板には、例えば第3図
に示す抵抗体素子が用いられている。
Conventionally, a resistor element shown in FIG. 3, for example, has been used in a thick film substrate of a hybrid IC.

図中の1は、第1の導体2と第2の導体3間に設けられ
た抵抗体である。この抵抗体lは、幅方向にトリミング
されている。なお、図中の4はトリミング跡を示す。
1 in the figure is a resistor provided between the first conductor 2 and the second conductor 3. This resistor l is trimmed in the width direction. Note that 4 in the figure indicates a trimming trace.

しかしながら、従来の抵抗体素子によれば、トリミング
が進むにつれてトリミング深さと抵抗値の変化(必ず高
くなる)する割合が一定せず、トリミング深さに対し抵
抗の上昇率が上るため、狙う特性が敏感に変化し、狙い
にくくなる。t7’t、)リミング完了後の抵抗体lの
残り巾が狭くなるため、消費電力に対してもたなくなる
However, with conventional resistor elements, as trimming progresses, the rate at which the trimming depth and resistance value change (always increases) is not constant, and the rate of increase in resistance increases with respect to the trimming depth, so the desired characteristics cannot be achieved. Changes in sensitivity and makes it difficult to aim. t7't,) Since the remaining width of the resistor l after rimming is completed becomes narrower, it cannot withstand the power consumption.

このようなことから、第4図〜第6図に示すような改良
され九厚膜抵抗素子が提案されている。第4図は、抵抗
体lを幅方向に3箇所トリミングしたものである。第5
図は、トリミング幅を狭くしてトリミングしたものであ
る。第6図は、トリミングすべき方向に対する抵抗体l
の幅を部分的に広くしたものである。しかしながら、い
ずれの場合も多少改善されるが、萌述した問題を十分解
消するには至らない。
For this reason, an improved nine-thick film resistive element as shown in FIGS. 4 to 6 has been proposed. FIG. 4 shows the resistor l trimmed at three points in the width direction. Fifth
The figure shows trimming with a narrower trimming width. Figure 6 shows the resistor l for the direction to be trimmed.
The width is partially widened. However, in each case, although some improvement is achieved, the above-mentioned problems cannot be fully resolved.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情に鑑みてなされたもので、トリミング
による特性の狙いを容易にするとともに、)リミングの
残り巾を広くして消費電力に対する耐性を向上しうる厚
膜抵抗素子を提供することを目的とする。
The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a thick film resistive element that can easily target the characteristics by trimming, and that can increase the remaining width of the rimming to improve resistance to power consumption. purpose.

〔発明の概要〕[Summary of the invention]

本発明は、2つの導体間に少なくとも抵抗値の大きい第
1の抵抗体と抵抗値の小さい第2の抵抗体を、中間導体
を介して直列に形成し、これら抵抗体の一部がトリミン
グされることを特徴とするもので、トリミングによる特
性の狙いの容易化と、トリミングの残り巾を広くするこ
とによる消費電力に対する耐性の向上を図ったものであ
る。
In the present invention, at least a first resistor having a high resistance value and a second resistor having a low resistance value are formed in series between two conductors via an intermediate conductor, and parts of these resistors are trimmed. This feature is intended to make it easier to target the characteristics by trimming, and to improve resistance to power consumption by increasing the remaining width of trimming.

本発明において、特性の狙い値より大きくはずれている
時の抵抗体のトリミングは、まず抵抗値の大きい第1の
抵抗体を特性の狙い値の手前までトリミングし、次に抵
抗値の小さい第2の抵抗体を狙い中心になるようにトリ
ミングすることにより行う。
In the present invention, when trimming the resistor when the characteristic is far off from the target value, first trim the first resistor with a large resistance value to just before the target value of the characteristic, then trim the second resistor with a small resistance value. This is done by trimming the resistor so that it is centered.

〔発明の実施例〕 を参照して説明する。ここで、第1図はトリミング前の
厚膜抵抗素子の平面図を、第2図はトリミング後の厚膜
抵抗素子の平面図を示す。
[Embodiments of the invention] will be explained with reference to [Embodiments of the invention]. Here, FIG. 1 shows a plan view of the thick film resistive element before trimming, and FIG. 2 shows a plan view of the thick film resistive element after trimming.

図中の21は、抵抗値が例えばl0KJI?の第1の抵
抗体である。この抵抗体21の一端には、中間導体22
t−介して°抵抗値が例えばIKgの第2の抵抗体23
が接続されている。また、前記第1の抵抗体21の他端
は第1の導体24に、かつ第2の抵抗体23の他端は第
2の導体25に夫々接続され、第1の抵抗体21及び第
2の抵抗体23は第1、第2の導体24.25に対して
直列に形成されている。
21 in the figure has a resistance value of, for example, l0KJI? is the first resistor. An intermediate conductor 22 is connected to one end of this resistor 21.
A second resistor 23 with a resistance value of, for example, IKg
is connected. Further, the other end of the first resistor 21 is connected to the first conductor 24, and the other end of the second resistor 23 is connected to the second conductor 25. The resistor 23 is formed in series with the first and second conductors 24 and 25.

ζうした構造の厚膜抵抗素子において、特性の狙い値よ
り大きく外れている時のトリミング社例えば第2図に示
すように行なう。即ち、第1の抵抗体21を狙い値の手
前までトリミングする(粗U4m>。次に、第2の抵抗
体23を狙い値の中心になるようにトリミングする(微
調!1)。以上より、トリミングを完了する。なお、図
中の26はトリミング跡である。
In a thick film resistive element having such a structure, trimming is performed when the characteristics deviate significantly from the target value, for example, as shown in FIG. That is, the first resistor 21 is trimmed to just before the target value (coarse U4m>). Next, the second resistor 23 is trimmed to the center of the target value (fine adjustment! 1). From the above, Trimming is completed. Note that 26 in the figure is a trimming trace.

しかして、本発明によれば、抵抗値の大きい(10xg
)第1の抵抗体21及び抵抗値の小さい(1xg)第2
の抵抗体23が第1の導体24、第2の導体25に対し
直列く形成されているため、トリミングする際、特性の
慕い値より大きく外れている時は第1の抵抗体21を狙
い値の近くまでトリミングし、その後第2の抵抗体23
を狙い値の中心までトリミングすれば、狙い巾の狭い特
性のものでも確実にトリミングを行うことができる。な
お、このトリミングするときのトリミング深さく巾)と
特性変°化状況との関係は、第8図に示す通りである。
According to the present invention, the resistance value is large (10xg
) The first resistor 21 and the second resistor with a small resistance value (1xg)
Since the resistor 23 is formed in series with the first conductor 24 and the second conductor 25, when trimming, if the characteristic value is far off from the desired value, the first resistor 21 is set to the target value. trim to near the second resistor 23.
If you trim to the center of the target value, you can reliably trim even those with characteristics that have a narrow target range. Incidentally, the relationship between the trimming depth (depth/width) at the time of trimming and the characteristic change situation is as shown in FIG.

図において、(イ)は第1の抵抗体をトリミングすると
きの領域を、←)は第2の抵抗体をトリミングするとき
の領域を夫々示す。
In the figure, (a) indicates the area when the first resistor is trimmed, and ←) indicates the area when the second resistor is trimmed.

また、抵抗値の大きい第1゛の抵抗体21のトリミング
により特性の狙い値の近くまでトリミングし、その後の
微調整を第2の抵抗体23めトリミングによシ行うため
、従来と比べ第2の抵抗体2Sの抵抗の変化がゆっくり
となってトリミングの残り巾を広くでき、消費電力に対
する耐性を向上できる。
In addition, the first resistor 21, which has a large resistance value, is trimmed to close to the target value of the characteristic, and subsequent fine adjustments are made by trimming the second resistor 23. Since the resistance of the resistor 2S changes slowly, the remaining width for trimming can be increased, and the resistance to power consumption can be improved.

更に、本発明によれば、第1の抵抗体21と第2の抵抗
体2Jが中間導体22を介して接続されているため、安
定した抵抗体が得られる。
Furthermore, according to the present invention, since the first resistor 21 and the second resistor 2J are connected via the intermediate conductor 22, a stable resistor can be obtained.

なお、上記実施例では、第1、第2の抵抗体の形状が略
同じ場合について述べたが、これに限らない。例えば、
第7図に示す如く第2の抵抗体31がトリミング方向に
広く形成されたものでもよい。
In addition, although the above-mentioned Example described the case where the shape of the 1st and 2nd resistor is substantially the same, it is not limited to this. for example,
As shown in FIG. 7, the second resistor 31 may be formed wide in the trimming direction.

また、上記実施例では、第1、第2の抵抗体の抵抗値が
夫々l0KJ?、IKgの場合について述べたが、これ
に限定されることなく種々の場合が考えられる。但し、
上記実施例の如く第1、第2の抵抗体の抵抗値の比が1
0の場合、あるいはこの前後が第2の抵抗体の微調整を
するのに好ましい。
Further, in the above embodiment, the resistance values of the first and second resistors are 10KJ? , IKg has been described, but the present invention is not limited to this and various other cases can be considered. however,
As in the above embodiment, the ratio of the resistance values of the first and second resistors is 1.
When the value is 0, or around this value, it is preferable to finely adjust the second resistor.

更に、上記実施例では、抵抗体を2つ設けた場合につい
て述べ九が、これに限らず、3つ以上直列に設けてもよ
い。
Further, in the above embodiment, the case where two resistors are provided is described, but the present invention is not limited to this, and three or more resistors may be provided in series.

〔発明の効果〕〔Effect of the invention〕

以上詳述した如く本発明によれば、トリミングによる特
性の狙いを容易にするとともに、トリミングの残り巾を
広くして消費電力に対する耐性を向上しうる厚膜抵抗素
子を提供できる。
As described in detail above, according to the present invention, it is possible to provide a thick film resistive element that can easily target the characteristics by trimming, and can increase the remaining width of trimming to improve resistance to power consumption.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る厚膜抵抗素子のトリミ
ング前の平面図、第2図は同厚膜抵抗素子のトリミング
後の平面図、第3図は従来の厚膜抵抗素子の平面図、第
4図〜WjG図は従来の改良された厚膜抵抗素子の平面
図、第7図は本発明の他の実施例に係る厚膜抵抗素子の
平面図、第8図は本発明に係る厚膜抵抗素子によるトリ
ミング特性図である。 21.23.31・・・抵抗体、22・・・中間導体、
24.25・・・導体、26・・・トリミング跡。 出願人代理人  弁理士 鈴 江 武 門弟1図   
  第2図 篇3区
FIG. 1 is a plan view of a thick film resistance element according to an embodiment of the present invention before trimming, FIG. 2 is a plan view of the same thick film resistance element after trimming, and FIG. 3 is a plan view of a conventional thick film resistance element. 4 to WjG are plan views of a conventional improved thick film resistive element, FIG. 7 is a plan view of a thick film resistive element according to another embodiment of the present invention, and FIG. 8 is a plan view of a thick film resistive element according to another embodiment of the present invention. FIG. 3 is a trimming characteristic diagram of the thick film resistive element according to FIG. 21.23.31...Resistor, 22...Intermediate conductor,
24.25...Conductor, 26...Trimming trace. Applicant's agent Patent attorney Takeshi Suzue Disciple 1
Figure 2 Section 3

Claims (1)

【特許請求の範囲】[Claims]  2つの導体間に少なくとも抵抗値の大きい第1の抵抗
体と抵抗値の小さい第2の抵抗体を中間導体を介して直
列に形成し、これら抵抗体の一部がトリミングされるこ
とを特徴とする厚膜抵抗素子。
A first resistor having a high resistance value and a second resistor having a low resistance value are formed in series between two conductors via an intermediate conductor, and a portion of these resistors is trimmed. Thick film resistive element.
JP59276097A 1984-12-28 1984-12-28 Thick film resistance element Pending JPS61156849A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59276097A JPS61156849A (en) 1984-12-28 1984-12-28 Thick film resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59276097A JPS61156849A (en) 1984-12-28 1984-12-28 Thick film resistance element

Publications (1)

Publication Number Publication Date
JPS61156849A true JPS61156849A (en) 1986-07-16

Family

ID=17564754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59276097A Pending JPS61156849A (en) 1984-12-28 1984-12-28 Thick film resistance element

Country Status (1)

Country Link
JP (1) JPS61156849A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434705U (en) * 1990-07-17 1992-03-23

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0434705U (en) * 1990-07-17 1992-03-23

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