JPS61156232U - - Google Patents
Info
- Publication number
- JPS61156232U JPS61156232U JP3943485U JP3943485U JPS61156232U JP S61156232 U JPS61156232 U JP S61156232U JP 3943485 U JP3943485 U JP 3943485U JP 3943485 U JP3943485 U JP 3943485U JP S61156232 U JPS61156232 U JP S61156232U
- Authority
- JP
- Japan
- Prior art keywords
- quartz
- utility
- processing
- quartz plate
- sandblasted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第1図は本考案の処理装置の好ましい一態様を
模式的な断面図で示した図であり、第2図は従来
の処理装置を模式的な断面図で示した図であり、
第3図a〜dは本考案の被処理基板支持用石英板
のいくつかの態様を拡大して示した図である。
(主な参照番号)、1,10……石英管、2,
14……溶融亜鉛、3,13……被処理基板、4
……カーボンコート、5……石英キヤツプ、11
……石英板、12……石英支持体、30……孔、
31……突起。
FIG. 1 is a schematic cross-sectional view of a preferred embodiment of the processing apparatus of the present invention, and FIG. 2 is a schematic cross-sectional view of a conventional processing apparatus.
FIGS. 3a to 3d are enlarged views of several embodiments of the quartz plate for supporting a substrate to be processed according to the present invention. (Main reference number), 1, 10...Quartz tube, 2,
14... Molten zinc, 3, 13... Substrate to be processed, 4
...Carbon coat, 5...Quartz cap, 11
... Quartz plate, 12 ... Quartz support, 30 ... Hole,
31... Protrusion.
Claims (1)
ラスト処理された石英管と、該石英管内に組込ま
れた、同様にサンドブラスト処理された石英製の
支持体と、該支持体に支持された少なくとも2枚
の相互に平行関係で隔置された石英板とを具備す
ることを特徴とする―族化合物半導体の大量
処理用亜鉛処理装置。 (2) 前記―族化合物半導体が亜鉛を族元
素として含有する化合物半導体であることを特徴
とする実用新案登録請求の範囲第1項記載の装置
。 (3) 前記石英板が石英製の網であることを特徴
とする実用新案登録請求の範囲第1項または第2
項記載の処理装置。 (4) 前記石英板が基板寸法よりも小さな寸法の
多数の孔を有するものであることを特徴とする実
用新案登録請求の範囲第1項または第2項記載の
処理装置。 (5) 前記石英板が更に先端の曲率の大きな突起
を有していることを特徴とする実用新案登録請求
の範囲第4項記載の処理装置。 (6) 前記石英板が前記支持体に対して摺動でき
、かつ任意の位置で固定できるようになつており
、2枚の石英板間に被処理基板を挾持できること
を特徴とする実用新案登録請求の範囲第1〜5項
のいずれか1項に記載の処理装置。[Claims for Utility Model Registration] (1) A quartz tube whose upper and lower inner surfaces are sandblasted, a support made of quartz which is also sandblasted and which is incorporated into the quartz tube, and 1. A zinc processing apparatus for mass processing of - group compound semiconductors, comprising at least two supported quartz plates spaced apart in parallel relationship. (2) The device according to claim 1, wherein the - group compound semiconductor is a compound semiconductor containing zinc as a group element. (3) Utility model registration claim 1 or 2, characterized in that the quartz plate is a quartz net.
Processing equipment described in Section 1. (4) The processing apparatus according to claim 1 or 2, wherein the quartz plate has a large number of holes having a size smaller than the substrate size. (5) The processing device according to claim 4, wherein the quartz plate further has a protrusion with a large curvature at the tip. (6) Registration of a utility model characterized in that the quartz plate can slide on the support body and can be fixed at any position, and a substrate to be processed can be sandwiched between the two quartz plates. The processing device according to any one of claims 1 to 5.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943485U JPS61156232U (en) | 1985-03-19 | 1985-03-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3943485U JPS61156232U (en) | 1985-03-19 | 1985-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61156232U true JPS61156232U (en) | 1986-09-27 |
Family
ID=30547373
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3943485U Pending JPS61156232U (en) | 1985-03-19 | 1985-03-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61156232U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08102447A (en) * | 1994-09-30 | 1996-04-16 | Shin Etsu Handotai Co Ltd | Quartz glass jig for semiconductor heat treatment and manufacture thereof |
-
1985
- 1985-03-19 JP JP3943485U patent/JPS61156232U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08102447A (en) * | 1994-09-30 | 1996-04-16 | Shin Etsu Handotai Co Ltd | Quartz glass jig for semiconductor heat treatment and manufacture thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH02135141U (en) | ||
JPS61156232U (en) | ||
JPH02141860U (en) | ||
JPS6194555U (en) | ||
JPS6032361U (en) | Crucible exchange device in vacuum evaporation equipment | |
JPH0247029U (en) | ||
JPH02122431U (en) | ||
JPS58155364U (en) | Jig for manufacturing hollow bodies using chemical vapor deposition method | |
JPH02140841U (en) | ||
JPS63153537U (en) | ||
JPS6297138U (en) | ||
JPH01120339U (en) | ||
JPS6212941U (en) | ||
JPS62182540U (en) | ||
JPS6450438U (en) | ||
JPH02132940U (en) | ||
JPH01121921U (en) | ||
JPS6266771U (en) | ||
JPS61186154U (en) | ||
JPS6265827U (en) | ||
JPS597356U (en) | solar heat collector | |
JPS61183967U (en) | ||
JPS6292646U (en) | ||
JPS61169358U (en) | ||
JPS55115347A (en) | Semiconductor device |