JPS61154164A - Solid image sensor element - Google Patents
Solid image sensor elementInfo
- Publication number
- JPS61154164A JPS61154164A JP59273850A JP27385084A JPS61154164A JP S61154164 A JPS61154164 A JP S61154164A JP 59273850 A JP59273850 A JP 59273850A JP 27385084 A JP27385084 A JP 27385084A JP S61154164 A JPS61154164 A JP S61154164A
- Authority
- JP
- Japan
- Prior art keywords
- light
- oxide film
- image sensor
- amount
- plano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 238000003384 imaging method Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は固体撮像素子に関し、固体撮像装置の感度を向
上させるためのものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a solid-state imaging device, and is intended to improve the sensitivity of a solid-state imaging device.
（従来例の構成とその問題点）
近年、従来の固体撮像装置は小形、軽量、高信頼性など
の点から民生用、あるいは産業用カメラとして用いられ
ており、その受光面を形成する固体撮像素子は従来２５
．４＋＋ａ（１インチ）あるいは１７．０ＩＩｌ（３分
の２インチ）のものが使用されていたが、最近、８曜サ
イズあるいは１２．７ｍ（２分の１インチ）サイズが主
流になってきていて、さらに小形化の傾向もあられれて
いる。(Conventional structure and its problems) In recent years, conventional solid-state imaging devices have been used as consumer or industrial cameras due to their small size, light weight, and high reliability. The element is conventionally 25
．． 4++a (1 inch) or 17.0IIl (2/3 inch) was used, but recently 8yo size or 12.7m (1/2 inch) size has become mainstream. There is also a growing trend towards smaller sizes.
そのため、受光面を形成する画素の面積も小さくなり、
取扱う電荷量も微小になっている。したがって光電変換
部であるフォトダイオード以外に入射する光によって発
生する偽電荷の割合が増えることになり、画質を著しく
低下させることになる。Therefore, the area of the pixels that form the light-receiving surface also becomes smaller.
The amount of charge handled is also minute. Therefore, the proportion of false charges generated by light incident on areas other than the photodiode, which is a photoelectric conversion unit, increases, resulting in a significant deterioration of image quality.
第１図はそのような画素で構成する従来の固体撮像素子
におけるフォトダイオード部の断面図である。１はＰ型
シリコン半導体基板、２はＮ型領域でＰＮ接合フォトダ
イオード２′を形成している。FIG. 1 is a cross-sectional view of a photodiode section in a conventional solid-state image sensing device composed of such pixels. 1 is a P-type silicon semiconductor substrate, and 2 is an N-type region forming a PN junction photodiode 2'.
３はそのＰＮ接合フォトダイオード２′を分離する熱酸
化膜、４はその熱酸化膜３上に設けた遮光用アルミニウ
ム膜であり、また５は固体撮像素子の保護用酸化膜であ
る。3 is a thermal oxide film separating the PN junction photodiode 2', 4 is a light shielding aluminum film provided on the thermal oxide film 3, and 5 is an oxide film for protecting the solid-state image sensor.
このように構成された従来の固体撮像素子に矢印で示す
ように光が入射すると、ＰＮ接合フォトダイオード２′
には、入射光に見合った電荷が発生し、図示しないＣＯ
Ｄ （電荷転送素子）により転送され光検知される。When light enters the conventional solid-state image sensor configured in this way as shown by the arrow, the PN junction photodiode 2'
A charge commensurate with the incident light is generated in the CO
Transferred by D (charge transfer element) and detected by light.
しかしながら、このような構成ではＰＮ接合フォトダイ
オード２′を分離する熱酸化膜３上の、遮光用アルミニ
ウム膜４に入射する光は反射され、そのため、固体撮像
素子の受光面が受ける光量に対して、ＰＮ接合フォトダ
イオード２′に入射する光量は５０％程度に落ち、固体
撮像素子の小形化に伴い、ますます取扱い電荷量が減少
し感度上大きな問題を残している。゛
（発明の目的）
本発明は上記従来例の問題点を排除して、高感度の固体
撮像装置を構成する固体撮像素子の提供を目的とする。However, in such a configuration, the light incident on the light-shielding aluminum film 4 on the thermal oxide film 3 separating the PN junction photodiodes 2' is reflected, and therefore the amount of light received by the light-receiving surface of the solid-state image sensor is The amount of light incident on the PN junction photodiode 2' falls to about 50%, and with the miniaturization of solid-state imaging devices, the amount of charge to be handled continues to decrease, leaving a major problem in terms of sensitivity. (Objective of the Invention) An object of the present invention is to eliminate the problems of the conventional example described above and provide a solid-state imaging device constituting a highly sensitive solid-state imaging device.
（発明の構成）
本発明は、固体撮像素子において、その保護用酸化膜に
ＰＮ接合フォトダイオード間を分離する熱酸化膜に対応
させて、たとえば平凹状のマイクロレンズを設け、遮光
用アルミニウム膜で反射されるべき入射光を、ＰＮ接合
フォトダイオード上に屈折させることにより、ＰＮ接合
フォトダイオードに入射する光量の割合を増大させるよ
うに構成したものである。(Structure of the Invention) The present invention provides a solid-state image sensor in which a protective oxide film is provided with, for example, a plano-concave microlens corresponding to a thermal oxide film that separates PN junction photodiodes, and a light-shielding aluminum film is provided. The structure is such that the proportion of the amount of light incident on the PN junction photodiode is increased by refracting the incident light that should be reflected onto the PN junction photodiode.
（実施例の説明）
以下、図面を用いて本発明を実施例により詳細に説明す
る。第２図は本発明の一実施例による固体撮像素子の断
面図であり、符号工ないし４は第１図と同じものを示し
、その他の符号５′は第１図の保護用酸化膜５と同じく
固体撮像素子の面を保護する保護用酸化膜を示し、その
面上には平凹マイクロレンズ６が、ＰＮ接合フォトダイ
オード２′間を分離した、熱酸化膜３面上の遮光用アル
ミニウム膜４に対応して設けられており、平凹マイクロ
レンズ６により、遮光用アルミニウム膜４に入射すべき
光７を光７′のように屈折させて、ＰＮ接合フォトダイ
オード２′に入射させるようになされている。(Description of Examples) Hereinafter, the present invention will be explained in detail by examples using the drawings. FIG. 2 is a cross-sectional view of a solid-state image sensor according to an embodiment of the present invention, where symbols 4 to 4 indicate the same elements as in FIG. 1, and other symbols 5' indicate the protective oxide film 5 in FIG. It also shows a protective oxide film that protects the surface of the solid-state image sensor, on which a plano-concave microlens 6 is shown, and a light-shielding aluminum film on the surface of the thermal oxide film 3 that separates the PN junction photodiodes 2'. 4, the plano-concave microlens 6 refracts the light 7 that should be incident on the light-shielding aluminum film 4 into light 7' and makes it incident on the PN junction photodiode 2'. being done.
この平凹マイクロレンズ６の製造は、−例として、平凹
マイクロレンズ６を形成すべき位置の中心部のみを開孔
した、レジストパターンを用いてウェット酸化膜エツチ
ングにより、その時間及びレジストパターンを選ぶこと
で形成できる。The plano-concave microlens 6 is manufactured by, for example, wet oxide film etching using a resist pattern with holes only in the center where the plano-concave microlens 6 is to be formed. It can be formed by choosing.
以上のとおり本発明は固体撮像素子において、その表面
に設ける保護用酸化膜５上に、ＰＮ接合フォトダイオー
ド２′間を分離する熱酸化膜３上の遮光用アルミニウム
膜４では反射さるべき入射光を、ＰＮ接合フォトダイオ
ード２′上に屈折させる平凹マイクロレンズ６を設けた
ものであり、マイクロレンズは平凹構造に限定されず、
また、平凹の中空部分に屈折率を変化させる他の材料を
充填して同じ目的を達してもよい。As described above, the present invention provides a solid-state image sensor in which incident light that should be reflected by the light-shielding aluminum film 4 on the thermal oxide film 3 separating the PN junction photodiodes 2' is formed on the protective oxide film 5 provided on the surface of the solid-state image sensor. A plano-concave microlens 6 is provided on the PN junction photodiode 2', and the microlens is not limited to a plano-concave structure.
The same objective may also be achieved by filling the hollow portion of the planar concave with another material that changes the refractive index.
（発明の効果）
以上詳細に説明して明らかなように本発明は、遮光用ア
ルミニウムで反射すべき入射光を、ＰＮ接合フォトダイ
オード面に屈折入射させるものであるから、固体撮像素
子の受光面が受ける光量とＰＮ接合フォトダイオードに
入射する光量との割合を８部にまで高めて、ｙＭ口率を
増大させることができ取扱電荷量が増加し、従って小形
軽量の感度の高い固体撮像装置の形成に大いに貢献する
。(Effects of the Invention) As is clear from the above detailed description, the present invention refracts the incident light that should be reflected by the light-shielding aluminum onto the PN junction photodiode surface. By increasing the ratio between the amount of light received by the PN junction photodiode and the amount of light incident on the PN junction photodiode to 8 parts, the yM coverage ratio can be increased, and the amount of charge handled can be increased. greatly contribute to the formation of
第１図及び第２図はそれぞれ、従来例及び本発明の固体
撮像素子におけるＰＮ接合フォトダイオード部の断面図
である。
１ ・・・Ｐ型シリコン基板、 ２・・・Ｎ型領域、２
′・・・ＰＮ接合フォトダイオード、 ３・・・熱酸化
膜、 ４ ・・・遮光用アルミニウム膜、５・・・保護
用酸化膜、 ６・・・平凹マイクロレンズ。FIG. 1 and FIG. 2 are cross-sectional views of a PN junction photodiode portion in a solid-state imaging device of a conventional example and the present invention, respectively. 1...P-type silicon substrate, 2...N-type region, 2
'... PN junction photodiode, 3... Thermal oxide film, 4... Light-shielding aluminum film, 5... Protective oxide film, 6... Plano-concave microlens.
Claims (1)
等により分離させ、その表面に遮光用アルミニウム膜及
び保護用酸化膜を設けて構成する固体撮像素子において
、上記遮光用アルミニウム膜上に入射すべき光を、該フ
ォトダイオード側に屈折させるようにしたマイクロレン
ズを、上記保護用酸化膜上に形成したことを特徴とする
固体撮像素子。In a solid-state imaging device configured by separating photodiodes as light-detecting elements with a thermal oxide film or the like, and providing a light-shielding aluminum film and a protective oxide film on the surface thereof, the light that should be incident on the light-shielding aluminum film is 1. A solid-state image sensor, comprising: a microlens that refracts light toward the photodiode; a microlens is formed on the protective oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59273850A JPS61154164A (en) | 1984-12-27 | 1984-12-27 | Solid image sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59273850A JPS61154164A (en) | 1984-12-27 | 1984-12-27 | Solid image sensor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61154164A true JPS61154164A (en) | 1986-07-12 |
Family
ID=17533417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59273850A Pending JPS61154164A (en) | 1984-12-27 | 1984-12-27 | Solid image sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61154164A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5119156A (en) * | 1987-09-11 | 1992-06-02 | Seiko Instruments Inc. | Photo-detecting semiconductor device with passivation suppressing multi-reflections |
| JP2013211413A (en) * | 2012-03-30 | 2013-10-10 | Fujifilm Corp | Solid state image sensor and image pickup device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59169173A (en) * | 1983-03-16 | 1984-09-25 | Matsushita Electronics Corp | Solid state image sensor |
-
1984
- 1984-12-27 JP JP59273850A patent/JPS61154164A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59169173A (en) * | 1983-03-16 | 1984-09-25 | Matsushita Electronics Corp | Solid state image sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5119156A (en) * | 1987-09-11 | 1992-06-02 | Seiko Instruments Inc. | Photo-detecting semiconductor device with passivation suppressing multi-reflections |
| JP2013211413A (en) * | 2012-03-30 | 2013-10-10 | Fujifilm Corp | Solid state image sensor and image pickup device |
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