JPS61149479A - Treatment of spent chemical copper plating solution - Google Patents

Treatment of spent chemical copper plating solution

Info

Publication number
JPS61149479A
JPS61149479A JP27172484A JP27172484A JPS61149479A JP S61149479 A JPS61149479 A JP S61149479A JP 27172484 A JP27172484 A JP 27172484A JP 27172484 A JP27172484 A JP 27172484A JP S61149479 A JPS61149479 A JP S61149479A
Authority
JP
Japan
Prior art keywords
copper
complexing agent
plating
waste liquid
chemical copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27172484A
Other languages
Japanese (ja)
Inventor
Kazuhiro Takeda
武田 一広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP27172484A priority Critical patent/JPS61149479A/en
Publication of JPS61149479A publication Critical patent/JPS61149479A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1617Purification and regeneration of coating baths

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To recover efficiently high purity copper and a copper ion complexing agent from a spent chemical copper plating soln. in a short time by adjusting the plating soln. to a high pH, depositing metallic copper on a metallic catalyst such as copper under reduced pressure, and adding an inorg. acid to crystallize the complexing agent. CONSTITUTION:A spent chemical copper plating soln. contg. bivalent copper ions, a copper ion complexing agent, pH adjusting agent and a reducing agent as principal component is adjusted to >=11.0pH with an alkali such as NaOH and introduced into a vacuum tank contg. a metallic plating catalyst such as Cu, Pd, Pt or Ni. The tank is evacuated to deposit copper ions in the spent plating soln. on the catalyst as metallic copper. After the deposited copper is recovered, the remaining soln. contg. practically no copper ions is adjusted to 1-2pH with an inorg. acid such as H2SO4 to crystallize the complexing agent such as EDTA, which is then separated by filtration and recovered.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は、化学銅めっき廃液から餉と錯化剤を回収する
方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for recovering cake and complexing agent from chemical copper plating waste liquid.

[発明の技術的背景とその問題点1 2価の銅イオンとその錯化剤およびPH調整剤。[Technical background of the invention and its problems 1 Divalent copper ion, its complexing agent and PH adjuster.

還元剤を主成分とする化学銅めっき廃液から銅と錯化剤
を回収するには銅と錯化剤との結合を解い友後、F液の
PHを1〜2にして錯化剤を晶析回収する方法がとられ
ている。従来、銅と錯化剤との結合を解く方法としては
1次のようであった。
To recover copper and complexing agent from chemical copper plating waste liquid containing reducing agent as the main component, after breaking the bond between copper and complexing agent, the pH of solution F is set to 1 to 2 and the complexing agent is crystallized. A method of analysis and recovery is used. Conventionally, the first method has been used to break the bond between copper and a complexing agent.

すなわち、■過剰のホルマリンと水酸化ナトリウムを廃
液中に入れ加熱し銅を沈殿させる方法。
Namely, ① A method in which excess formalin and sodium hydroxide are placed in waste liquid and heated to precipitate copper.

■廃液中にパラジウムを吸着させ几活性炭を投入し、パ
ラジウム上へ金属鋼として析出させる方法〇■銅銅鉛錯
化剤結合を解く薬品を添加する方法である。
■Method of adsorbing palladium in waste liquid, adding activated carbon, and depositing it on palladium as metal steel〇■Method of adding a chemical to break up copper-copper-lead complexing agent bonds.

しかし、これらの方法では、■は銅を完全に沈殿させる
には10時間ないし、−昼夜を要する0高温N、PHで
行うため、カニツアロ反応が進行し。
However, in these methods, (1) is carried out at a high temperature, N, and pH, which requires 10 hours to - day and night to completely precipitate copper, so the Cannitzaro reaction proceeds.

多tのホルマリンと水酸化す) IJウムを必要とする
。昇温、冷却のためかなりのエネルギーと時間を心動と
する0■は、廃液中の銅イオンを十分除去できない。パ
ラジウムを多量に使用するため高価であるC■げ5回収
した錯化剤に不純物が混入するため再使用に不適当。結
合を解く薬品の回収をする友め工程が複雑1:なる。等
の欠点があり、工業的規模で行う場合いずれも不適当で
あった0[発明の目的] 本発明に、上記のような従来技術の欠点をなくし、高純
度の銅と錯化剤を効率良く短時間で回収する化学銅めっ
き廃液の処理方法を提供するにある0 [発明の概要] 本発明に、2価の銅イオンとその錯化剤およびPH調整
剤、還元剤を主成分とする化学銅めっき廃液のPHvl
l、0以上にする工程と、銅、パラジウム、白金、ニッ
ケルより選ばれためつき触媒金属を配設した減圧槽に、
前記化学銅めっき廃液を導入する工程と、減圧槽内を減
圧し、化学銅めつき廃液中の銅イオンをめっき触媒金属
上へ金属鋼として析出させる工程と、前記減圧槽内の溶
液に無機rg、を加えてPHを1.0〜2.0にして2
価銅イオンの錯化剤を晶析させて回収する工程とを具備
したことを特徴とする化学銅めっき廃液の処理方法であ
る。
Requires a large amount of formalin and hydroxide). 0■, which requires a considerable amount of energy and time for heating and cooling, cannot sufficiently remove copper ions from the waste liquid. It is expensive because it uses a large amount of palladium.5 It is unsuitable for reuse because the recovered complexing agent is contaminated with impurities. The process of recovering the chemicals that break the bonds becomes complicated. [Objective of the Invention] The present invention eliminates the above-mentioned drawbacks of the prior art and efficiently uses high-purity copper and a complexing agent. [Summary of the Invention] The present invention provides a method for treating chemical copper plating waste liquid that can be easily recovered in a short time. PHvl of chemical copper plating waste liquid
1, a step of increasing the temperature to 0 or more, and a reduced pressure tank equipped with a catalyst metal selected from copper, palladium, platinum, and nickel.
a step of introducing the chemical copper plating waste solution; a step of reducing the pressure in the vacuum tank to precipitate copper ions in the chemical copper plating waste solution onto the plating catalyst metal as metal steel; and adding inorganic RG to the solution in the vacuum tank. , to adjust the pH to 1.0-2.0.
A method for treating chemical copper plating waste liquid, comprising a step of crystallizing and recovering a complexing agent for valence copper ions.

すなわち、PHを11以上にした化学銅めっき廃液を、
めっき触媒金属の配設した減圧槽で減圧することにより
触媒金属上へ金属鋼として析出させ銅を回収し、残液の
PHを1.0〜2.0として高純度の錯化剤を回収する
ところにある。
In other words, chemical copper plating waste liquid with a pH of 11 or higher,
By reducing the pressure in a vacuum tank equipped with a plating catalyst metal, copper is deposited on the catalyst metal as metal steel and recovered, and the pH of the residual liquid is adjusted to 1.0 to 2.0 to recover a high purity complexing agent. There it is.

本発明により、次のように従来の欠点を解消できる。According to the present invention, the conventional drawbacks can be overcome as follows.

(1)排水中の銅をほぼ完全に除去できる〇(2)銅と
錯化剤の結合を解くのに昇温せずにすむ友め、余分なエ
ネルギーと時間を必要としない0(3)  カニツアロ
反応が進行しない几め、多量のホルマリンと水酸化ナト
リウムを必要としない0(4)高純度の銅と錯化剤を短
時間で効率よく回収できる。
(1) Copper in wastewater can be almost completely removed. (2) No need to raise the temperature to break the bond between copper and complexing agent. No extra energy or time required. (3) 0(4) High purity copper and complexing agent can be efficiently recovered in a short time without the need for a large amount of formalin and sodium hydroxide to prevent the Canitzaro reaction from proceeding.

(5)工業的規模で実施が可能である〇[発明の実施例
コ 以下に、本発明の実施例につき、さらに詳細に説明する
(5) Can be implemented on an industrial scale 〇 [Examples of the Invention Examples of the present invention will be described in more detail below.

実施例 1 本実施例に用い友めっき廃液は次の如きものである。め
っき液組成; Cu804・5Hs0   0.03 mob/J−E
DTA(4Na)    0.06  rHCHOO,
10# NaOHPHを12.5とする量 α、α′ジピリジル   10 岬/J2MBT   
       1゜Olで1週間現場で使用したもので
ある。
Example 1 The plating waste liquid used in this example is as follows. Plating solution composition; Cu804・5Hs0 0.03 mob/J-E
DTA(4Na) 0.06 rHCHOO,
10# Amount α, α′ dipyridyl to make NaOHPH 12.5 10 Misaki/J2MBT
It was used in the field for one week at 1°Ol.

第1図は1本発明をフローチャート化し友ものである0
前記めっき廃液を水酸化ナトリウムでPH11,0以上
にし、次いで減圧して−を触媒金属上に析出させt後、
 H2SO4を加えPHを1〜2好ましくけ1.5〜2
に調整し、EDTAを沈殿させる0このEDTAの沈殿
をf別し、fJ液に水酸化ナトリウムで中和して廃棄す
る。一方BDTA d水洗して回収し、化学銅めっき液
に再利用する0第2図に、本発明に用い友装置を図面に
基づき説明すると4σ減圧槽であり、2が触媒金120
0メツシユの銅製網)で、廃液3内に浸漬されている。
Figure 1 is a flowchart of the present invention.
The plating waste liquid is made to have a pH of 11.0 or more with sodium hydroxide, and then the pressure is reduced to precipitate - on the catalyst metal.
Add H2SO4 and adjust the pH to 1-2, preferably 1.5-2
Adjust to 0 to precipitate EDTA. Separate this EDTA precipitate, neutralize it with fJ solution with sodium hydroxide, and discard. On the other hand, BDTA d is recovered by washing with water and reused as a chemical copper plating solution.0 Figure 2 shows a companion device used in the present invention based on the drawing.
0 mesh copper mesh) and is immersed in the waste liquid 3.

5は真空ポンプで到達真空度5xlOTorrのものを
用い友O1は真空計でピラリ−真空計を用い、6はヒー
タで所定温度に調整した。なお図中7は弁を、 8Lr
iポンプをそれぞれ示す。
Reference number 5 used a vacuum pump with an ultimate vacuum level of 5xlOTorr, number O1 used a vacuum gauge using a Pillary vacuum gauge, and number 6 was adjusted to a predetermined temperature using a heater. In addition, 7 in the figure is the valve, 8Lr
i pumps are shown respectively.

第3図めっき廃液のPHを12.5.温度30℃、触媒
金pA表面積s 6m2/l 、真空度5 X 10−
1Torrで銅を析出させた時の時間と残留銅製度との
関係である0 約5時間で残留銅製度を0.3ppmまで除去できるこ
とがわかる。
Figure 3: pH of plating waste liquid is 12.5. Temperature 30℃, catalyst gold pA surface area s 6m2/l, degree of vacuum 5 x 10-
The relationship between the time when copper is deposited at 1 Torr and the residual copper content is 0. It can be seen that the residual copper content can be removed to 0.3 ppm in about 5 hours.

第4図に、めっき廃液のPRを11.0〜13.5と変
化させ、上記と同様な余件で5時間めっきを析出させた
時の処理PHと残留銅製度との関係である。
FIG. 4 shows the relationship between the treatment PH and the residual copper content when the PR of the plating waste solution was varied from 11.0 to 13.5 and the plating was deposited for 5 hours under the same conditions as above.

この図からも判るようにPHが11,5ニリ大きい場合
5時間後戻液中に残留する銅濃度に急ぎに減少すること
が判ったcしたがって、ぬつき廃液のPHtri好まし
くは11.5以上%特に12.5以上が良いことが千]
る。
As can be seen from this figure, when the pH is 11.5 N, the concentration of copper remaining in the liquid returned after 5 hours rapidly decreases. Therefore, the PHtri of the waste liquid is preferably 11.5% or more. Especially, 12.5 or above is good]
Ru.

第5図は、めっき廃液の温度を10〜50℃と変化させ
、上記と同様な条件で5時間めっきを析出させた時の温
度と残留銅濃度との関係である。温度30℃が最も効率
が良かった。また、温度が30℃以上になると残液中の
銅濃度が増加する傾向にあった。これは、PHとHCH
O9度が30℃のものより急速に減少していることから
カニツアロ反応が進行し九九めと考えられる0次のED
TA回収の酸処理を考えるとめつき廃液の温度Fi20
〜40℃好ましくは25〜35℃が良いことが判る。
FIG. 5 shows the relationship between temperature and residual copper concentration when plating was deposited for 5 hours under the same conditions as above with the temperature of the plating waste solution varied from 10 to 50°C. A temperature of 30°C was most efficient. Moreover, when the temperature rose to 30° C. or higher, the copper concentration in the residual liquid tended to increase. This is PH and HCH
Since the O9 degree decreases more rapidly than that of 30 degrees Celsius, the Canitzaro reaction progresses and is considered to be the 99th ED.
Considering acid treatment for TA recovery, the temperature of plating waste liquid Fi20
It is found that the temperature is preferably 25 to 35°C, preferably 25 to 35°C.

1念、銅イオンを除去した後、残液のPHを1.5にし
EDTAを回収口過し、数回水洗し友後、再度これを用
いて、前記組成で化学銅めっき液を調整し、めっきを行
つt結果、めっき皮膜の光沢、物性、浴の安定性および
析出速度には、なんら愚影響を及ぼさないことを認め次
After removing the copper ions, the pH of the remaining solution was adjusted to 1.5, EDTA was passed through the recovery port, and after rinsing with water several times, this was used again to prepare a chemical copper plating solution with the above composition, It has been recognized that the plating results do not have any adverse effects on the gloss, physical properties, bath stability, and deposition rate of the plating film.

[発明の効果] 以上の説明および実施例から明らかなように本発明によ
れば極めて簡単な装置および操作により。
[Effects of the Invention] As is clear from the above description and examples, the present invention uses an extremely simple device and operation.

工業的規模で化学銅めっき液の廃液処理が実施できる。Waste liquid treatment of chemical copper plating solution can be carried out on an industrial scale.

さらに従来技術の欠点をなくしかつ高純度の銅と錯化剤
を効率よく回収できるとともに、これらを再度調整しめ
つきできることから、めっきコストがきわめて安くなる
ものである。
Furthermore, the drawbacks of the prior art can be eliminated, high purity copper and complexing agent can be efficiently recovered, and these can be adjusted and plated again, so the plating cost can be extremely reduced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明方法のフローチャート、第2図は本発明
方法を用いた装置の模式図、第39乃至第5図は本発明
方法を用いた特性図である。 1・・・ピラリ−真空計 2・・・200メツシユの銅製網 3・・・めっき廃液   4・・・減圧槽5・・・真空
ポンプ   6・・・ヒーター7・・・弁      
 8・・・ポンプ代理人 弁理士 則 近 憲 佑(ほ
か1名)時呵(/−/) メξ王里 PH 第  5 図 渫戊〔・C〕
FIG. 1 is a flowchart of the method of the present invention, FIG. 2 is a schematic diagram of an apparatus using the method of the present invention, and FIGS. 39 to 5 are characteristic diagrams using the method of the present invention. 1... Pillary vacuum gauge 2... 200 mesh copper mesh 3... Plating waste liquid 4... Decompression tank 5... Vacuum pump 6... Heater 7... Valve
8... Pump agent Patent attorney Nori Chika Kensuke (and 1 other person) Toki (/-/) Me ξ Ori PH No. 5 Zuyu [・C]

Claims (1)

【特許請求の範囲】 2価の銅イオンとその錯化剤およびPH調整剤、還元剤
を主成分とする化学銅めっき廃液のPHを11.0以上
にする工程と、 銅、パラジウム、白金、ニッケルより選ばれためっき触
媒金属を配設した減圧槽に、前記化学銅めっき廃液を導
入する工程と、 減圧槽内を減圧し、化学銅めっき廃液中の銅イオンをめ
っき触媒金属上へ金属銅として析出させる工程と、 前記減圧槽内の溶液に無機酸を加えてPHを1〜2にし
て2価銅イオンの錯化剤を晶析させて回収する工程 とを具備したことを特徴とする化学銅めっき廃液の処理
方法。
[Claims] A step of increasing the pH of a chemical copper plating waste solution containing divalent copper ions, a complexing agent thereof, a PH adjuster, and a reducing agent to 11.0 or higher, copper, palladium, platinum, A step of introducing the chemical copper plating waste liquid into a pressure reduction tank in which a plating catalyst metal selected from nickel is arranged, and reducing the pressure in the pressure reduction tank to transfer copper ions in the chemical copper plating waste liquid onto the plating catalyst metal. and a step of adding an inorganic acid to the solution in the reduced pressure tank to adjust the pH to 1 to 2 to crystallize and recover a complexing agent for divalent copper ions. Processing method for chemical copper plating waste liquid.
JP27172484A 1984-12-25 1984-12-25 Treatment of spent chemical copper plating solution Pending JPS61149479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27172484A JPS61149479A (en) 1984-12-25 1984-12-25 Treatment of spent chemical copper plating solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27172484A JPS61149479A (en) 1984-12-25 1984-12-25 Treatment of spent chemical copper plating solution

Publications (1)

Publication Number Publication Date
JPS61149479A true JPS61149479A (en) 1986-07-08

Family

ID=17503953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27172484A Pending JPS61149479A (en) 1984-12-25 1984-12-25 Treatment of spent chemical copper plating solution

Country Status (1)

Country Link
JP (1) JPS61149479A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101847A1 (en) * 2003-05-14 2004-11-25 Century Circuits Inc. Method and apparatus for converting metal ion in solution to the metal state
US20070048447A1 (en) * 2005-08-31 2007-03-01 Alan Lee System and method for forming patterned copper lines through electroless copper plating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004101847A1 (en) * 2003-05-14 2004-11-25 Century Circuits Inc. Method and apparatus for converting metal ion in solution to the metal state
US20070048447A1 (en) * 2005-08-31 2007-03-01 Alan Lee System and method for forming patterned copper lines through electroless copper plating

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