JPS61146761A - Sintered body of silicon carbide - Google Patents
Sintered body of silicon carbideInfo
- Publication number
- JPS61146761A JPS61146761A JP60084498A JP8449885A JPS61146761A JP S61146761 A JPS61146761 A JP S61146761A JP 60084498 A JP60084498 A JP 60084498A JP 8449885 A JP8449885 A JP 8449885A JP S61146761 A JPS61146761 A JP S61146761A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- sintered body
- strength
- weight
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
の
この発明は、高温で強度の高い炭化ケイ素の焼結体に関
する。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a sintered body of silicon carbide that has high strength at high temperatures.
【Ｌへ１【
従来の常圧焼結法により製造される炭化ケイ素焼結体に
あっては、焼結助剤として８やＣが使用されているのが
一般的で、その場合、強度ＭＰａは高温で約２８０であ
った。[To L1] In silicon carbide sintered bodies manufactured by the conventional pressureless sintering method, 8 or C is generally used as a sintering aid, and in that case, the strength MPa was about 280 at high temperature.
し°とる
４この程度の高温強度では使用目的や使用態様によって
は不十分である。と（に最近になって従来よりも一段と
＾いｌ１度（たとえば１４００℃）における強度を高く
したいという要望が強くなってきた。4. This level of high-temperature strength is insufficient depending on the purpose and manner of use. (Recently, there has been a strong demand for higher strength at 11 degrees (for example, 1400 degrees Celsius) than in the past.
一般的にいって、高温状態では焼結体の粒子間の結合力
が弱く、強度不足になるのである。Generally speaking, at high temperatures, the bonding force between particles of a sintered body is weak, resulting in insufficient strength.
Ｒ」し１月」１
この発明は、化学的に安定で、しかも高温で強度が高く
、それゆえ薄肉にして軽量化を図ることができ、耐熱性
にも優れている炭化ケイ素焼結体を提供することを目的
としている。This invention uses a silicon carbide sintered body that is chemically stable, has high strength at high temperatures, can be made thinner and lighter, and has excellent heat resistance. is intended to provide.
■」しλ亘」［
このような目的を達成するために、本発明は、炭化ケイ
素６０〜９４１１％、窒化アルミニウム１〜２０重量％
、炭素２〜２０重量％の組成からなり高強度の高温部材
であることを特徴とする炭化ケイ素の焼結体を要旨とし
ている。■ ``λ Wataru''
, the gist is a sintered body of silicon carbide, which is characterized by having a composition of 2 to 20% by weight of carbon and being a high-strength, high-temperature member.
だ の
この発明による炭化ケイ素焼結体は、炭化ケイ素、窒化
アルミニウムおよび炭素の組成を勘案して、炭化ケイ素
を主成分にすることによって、化学的に安定なものとし
、かつ窒化アルミニウムと炭素を添加することにより、
高強度のものとし、さらに耐熱性にも優れたものにした
のである。The silicon carbide sintered body according to this invention is made chemically stable by making silicon carbide the main component, taking into account the composition of silicon carbide, aluminum nitride, and carbon, and by combining aluminum nitride and carbon. By adding
It was made to have high strength and also excellent heat resistance.
窒化アルミニウム（ＡＩＩＮ）を炭化ケイ素（Ｓｉ Ｃ
）に添加して炭化ケイ素焼結体を作るのであるが、その
添加量について説明する。Aluminum nitride (AIIN) is replaced by silicon carbide (Si C
) to make a silicon carbide sintered body, and the amount added will be explained below.
表１は、実施例１および２について、炭素の添加量を５
重量％に設定した時に、窒化アルミニウムの添加量の変
化による炭化ケイ素焼結体の諸特性の影響を示したもの
である。Table 1 shows that for Examples 1 and 2, the amount of carbon added was 5
This figure shows the influence of changes in the amount of aluminum nitride added on various properties of the silicon carbide sintered body when the weight percentage is set.
窒化アルミニウムの添加量が１重量％より小であれば、
炭化ケイ素焼結体はち密化が阻害されて密度が小さくな
り、強い結合力が得られない。If the amount of aluminum nitride added is less than 1% by weight,
The densification of the silicon carbide sintered body is inhibited and the density becomes low, making it impossible to obtain strong bonding strength.
また、窒化アルミニウムの添加量が、２０重量％より大
であれば、炭化ケイ素の焼結がうまく進まず、強度が低
下する。Furthermore, if the amount of aluminum nitride added is greater than 20% by weight, sintering of silicon carbide will not proceed well and the strength will decrease.
したがって、窒化アルミニウムの添加量の範囲は１〜２
０重量％が適切である。この範囲では、炭化ケイ素焼結
体は密度もｗｒ；ｒ＊＜たとえば１４００℃）での強度
も大きい。Therefore, the range of the amount of aluminum nitride added is 1 to 2
0% by weight is suitable. In this range, the silicon carbide sintered body has a high density and strength at wr;r*<eg, 1400°C).
（２） の について
表２は、実施例３〜５について、窒化アルミニウムの添
加量を５重量％に設定した時に、炭素の添加量の変化に
よる炭化ケイ素焼結体の諸特性の影響を示したものであ
る。(2) Table 2 shows the influence of changes in the amount of carbon added on various properties of the silicon carbide sintered body when the amount of aluminum nitride added was set to 5% by weight for Examples 3 to 5. It is something.
炭素添加量が２１ｉ量％より小であると、ち密な焼結炭
化ケイ素の組織となるが、高温での強度が急激に低下す
る。If the amount of carbon added is less than 21i%, a dense sintered silicon carbide structure will be formed, but the strength at high temperatures will sharply decrease.
炭素添加量が２０！！ｉ量％より大になると、密度が小
さくなって、焼結体の粒子間の結合力が弱くなり、強度
が低下する。また、炭化ケイ素の焼結が阻害され、遊離
炭素が多くなって、耐酸化特性が低下する。Carbon addition amount is 20! ! When the amount exceeds i%, the density becomes small, the bonding force between particles of the sintered body becomes weak, and the strength decreases. Furthermore, sintering of silicon carbide is inhibited, free carbon increases, and oxidation resistance decreases.
したがって、炭素の添加量の範囲は、２〜２０重量％が
適切である。Therefore, the appropriate range of the amount of carbon added is 2 to 20% by weight.
上述の（１）（２＞の記載からも明らかなように、炭化
ケイ素に対する窒化アルミニウムと炭素の添加量を制御
することにより、焼結体の組成を調整し、炭化ケイ素６
０〜９４重量％に対して窒化アルミニウム１〜２０重量
％、炭素２〜２０重量％の組成からなる炭化ケイ素焼結
体を得るのである。As is clear from the descriptions of (1) and (2) above, by controlling the amounts of aluminum nitride and carbon added to silicon carbide, the composition of the sintered body can be adjusted and silicon carbide 6
A silicon carbide sintered body having a composition of 0 to 94% by weight, 1 to 20% by weight of aluminum nitride, and 2 to 20% by weight of carbon is obtained.
炭化ケイ素の理論密度は３．２１９／ｃｍ３であるが、
本発明による好適な炭化ケイ素焼結体の実際の密度は理
論密度の７０〜９９％に設定するのが望ましい。The theoretical density of silicon carbide is 3.219/cm3,
The actual density of the silicon carbide sintered body suitable for the present invention is desirably set to 70 to 99% of the theoretical density.
また、窒化アルミニウムが酸窒化アルミニウム（ＡＮ−
０−Ｎ）を含むのが望ましい。In addition, aluminum nitride is aluminum oxynitride (AN-
0-N).
表１と表２に一部示されているように、高１！（とくに
１４００℃）における強度実験の結果、曲げ強さが３０
０〜５５０ＭＰａにおよぶことが判明した。As partially shown in Tables 1 and 2, High 1! (especially at 1400℃), the bending strength was 30℃.
It was found that the pressure ranged from 0 to 550 MPa.
以上説明したように、この発明によれば、炭素が主成分
であるため、化学的に安定なものにでき、また窒化アル
ミニウムと炭素を適量添加しているので、結合力が強く
、とくに高温で＾強度であり、実際に用いる場合、焼結
体を薄肉化して軽量化をはかることができる。しかも、
耐熱性にも優れていることから高温部材として最適であ
る。As explained above, according to this invention, since carbon is the main component, it can be made chemically stable, and since appropriate amounts of aluminum nitride and carbon are added, the bonding strength is strong, especially at high temperatures. ^ It is strong, and when actually used, the sintered body can be made thinner and lighter. Moreover,
It also has excellent heat resistance, making it ideal as a high-temperature member.
鵠 手続補正ＩＩ（自発） 昭和６０年４月２５日goose Procedural amendment II (voluntary) April 25, 1985
Claims (3)
１〜２０重量％、炭素２〜２０重量％の組成からなり高
強度の高温部材であることを特徴とする炭化ケイ素の焼
結体。(1) A sintered body of silicon carbide characterized by being a high-strength, high-temperature member comprising a composition of 60 to 94% by weight of silicon carbide, 1 to 20% by weight of aluminum nitride, and 2 to 20% by weight of carbon.
請求の範囲第１項記載の炭化ケイ素の焼結体。(2) The sintered body of silicon carbide according to claim 1, wherein the actual density is 70 to 99% of the theoretical density.
む特許請求の範囲第１項記載の炭化ケイ素の焼結体。(3) The sintered body of silicon carbide according to claim 1, wherein the aluminum nitride includes aluminum oxynitride.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084498A JPS61146761A (en) | 1985-04-22 | 1985-04-22 | Sintered body of silicon carbide |
| GB8529882A GB2170511B (en) | 1984-12-17 | 1985-12-04 | Sintered body of silicon carbide |
| DE19853543708 DE3543708A1 (en) | 1984-12-17 | 1985-12-11 | Sintered body based on silicon carbide |
| FR8518584A FR2575458B1 (en) | 1984-12-17 | 1985-12-16 | COMPACT SINTERED SILICON CARBIDE BODY, HEATING ELEMENT FORMED BY SUCH A BODY, AND HEATING APPARATUS CONTAINING THE SAME |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60084498A JPS61146761A (en) | 1985-04-22 | 1985-04-22 | Sintered body of silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61146761A true JPS61146761A (en) | 1986-07-04 |
Family
ID=13832306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60084498A Pending JPS61146761A (en) | 1984-12-17 | 1985-04-22 | Sintered body of silicon carbide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61146761A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9522849B2 (en) | 2011-04-21 | 2016-12-20 | Bridgestone Corporation | Ceramic sintered body and method of manufacturing ceramic sintered body |
-
1985
- 1985-04-22 JP JP60084498A patent/JPS61146761A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9522849B2 (en) | 2011-04-21 | 2016-12-20 | Bridgestone Corporation | Ceramic sintered body and method of manufacturing ceramic sintered body |
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