JPS61145832A - 低温プラズマ蝕刻方法 - Google Patents

低温プラズマ蝕刻方法

Info

Publication number
JPS61145832A
JPS61145832A JP59269851A JP26985184A JPS61145832A JP S61145832 A JPS61145832 A JP S61145832A JP 59269851 A JP59269851 A JP 59269851A JP 26985184 A JP26985184 A JP 26985184A JP S61145832 A JPS61145832 A JP S61145832A
Authority
JP
Japan
Prior art keywords
etching
semiconductor substrate
etched
plate
temperature plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59269851A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426536B2 (https=
Inventor
Michio Harashima
原島　迪夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP59269851A priority Critical patent/JPS61145832A/ja
Publication of JPS61145832A publication Critical patent/JPS61145832A/ja
Publication of JPH0426536B2 publication Critical patent/JPH0426536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP59269851A 1984-12-20 1984-12-20 低温プラズマ蝕刻方法 Granted JPS61145832A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59269851A JPS61145832A (ja) 1984-12-20 1984-12-20 低温プラズマ蝕刻方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59269851A JPS61145832A (ja) 1984-12-20 1984-12-20 低温プラズマ蝕刻方法

Publications (2)

Publication Number Publication Date
JPS61145832A true JPS61145832A (ja) 1986-07-03
JPH0426536B2 JPH0426536B2 (https=) 1992-05-07

Family

ID=17478076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59269851A Granted JPS61145832A (ja) 1984-12-20 1984-12-20 低温プラズマ蝕刻方法

Country Status (1)

Country Link
JP (1) JPS61145832A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943344A (en) * 1986-10-29 1990-07-24 Hitachi, Ltd. Etching method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137266A (en) * 1976-05-12 1977-11-16 Nichiden Varian Kk Method of sputter etching

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137266A (en) * 1976-05-12 1977-11-16 Nichiden Varian Kk Method of sputter etching

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943344A (en) * 1986-10-29 1990-07-24 Hitachi, Ltd. Etching method

Also Published As

Publication number Publication date
JPH0426536B2 (https=) 1992-05-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term