JPS61144837A - ボンデイング検査装置 - Google Patents

ボンデイング検査装置

Info

Publication number
JPS61144837A
JPS61144837A JP59267684A JP26768484A JPS61144837A JP S61144837 A JPS61144837 A JP S61144837A JP 59267684 A JP59267684 A JP 59267684A JP 26768484 A JP26768484 A JP 26768484A JP S61144837 A JPS61144837 A JP S61144837A
Authority
JP
Japan
Prior art keywords
bonding
signal
quality
section
decision
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59267684A
Other languages
English (en)
Inventor
Hironobu Ozawa
小沢　弘延
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP59267684A priority Critical patent/JPS61144837A/ja
Publication of JPS61144837A publication Critical patent/JPS61144837A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はボンディング品質の良否の判定を、赤外線又は
超音波等を用いて、非破壊で行うボンデインク検査！１
ｆｌＫ関する。
〔従来の技術〕
従来のボンディング品質の検査方式を第３図、纂４図を
用いて説明する。
ｗｉｓ図は金又はアルミ等のワイヤーを用いてボンディ
ングした場合のボンディング品質の検査方式である。基
板１に固定された工Ｃ２のパッド１ａと、リードパター
ン１＆はワづヤー３によりボノディングされＩＩ続され
ている。そして、ボンディング品質の検ｆＩＩｉ、前記
ワイヤー５に、ゲージ４の測定端子４ａを引っかけ、そ
の破戒強度を測定することにより判定していた、 纂４図はパターンとＩＣを直接ボンディングした場合の
ボンディング品質の検査方式である。リードパターン１
ａの前端部のフィンガー１ｂと工Ｃ２のバンプ２ｂは熱
圧着等にＬシ直接ポンディングされ接続されている。そ
してこの場合のボンディング品質の横歪は前記フィンガ
ー１ｂに前記ゲージ４の測定端子４Ｉ！Ｌを引っかけ、
その破壊強厩を測定することにより判定していた、〔発
明が解決しようとする問題点〕 第５図及び第４図の従来例の場合には破壊試験であるた
めに試験サンプルは不良となってしまいある限られた数
量しか試験することができない。
またゲージを用い、測定端子を引っかけて測定する方式
であるため微細部分の測定は困難であるしｆｌＩ４足に
多くの時間を費やす等の問題がある。
一本発明は、ボンディング品質の良否の判定をレーザー
赤外線又は超音波等を用いて非破壊で行ない、かかる問
題点を除去することを目的とするものである。
〔問題点を解決するための手段〕
発信源、前記発振源の信号をボンディング面に当てた二
次信号を受信する受信部、前記受信部の信号を伝達する
伝達回路部、伝達された信号により論理計算処理をする
論理計算部、前記論理計算部Ｉ／ｃニジ計算した結果に
より良否の判定をする判定部及び鋳記受信部の信号をモ
ニターするモニター部からなるボンディング検査装置に
おいて、発信源にレーザー、赤外線又は超音波等を用い
、非環でボンディング品質を判定することを特徴とする
。
〔実施例〕
第１図、第２図は本発明の一実施例のボンディング検Ｉ
Ｅ装置を示す図であり、第１図は信号伝達経路を示し、
第２図（ａ）　ｖ　（ｂ）はボンディング断面から見た
発信源〜ポンディング面〜受信部での信号の移動状態を
示す。
発振源Ａから出された赤外線又は超−音波等の信号は基
板１及び工Ｃ２の裏面を通シ、ポンディング面Ｂ１に当
たる。そして、前記ボンディング面の信号を受信ｇｃで
受け、伝達回路りを回して、論理計算部Ｅに伝送する。
前記論理計算部では伝送された信号からボンディング面
Ｂの接合面積を計算し、あらかじめ実験されである接合
面積とボンディング強度の対応関係式よりボンディング
強度を算出し、その結果を、判定部？へ送信する。
判定部では、送信されてきた結果と、規格値とを比較し
、良否の判定をする。
さらに１前記伝送回路からの信号をモニター〇に伝送し
、ボンディング状態を監視する。
上記説明はｘＣパッド２ａとワイヤー５のボンディング
面Ｂ１の説明であるが、リードパターン１ａとワイヤー
５とのボンディング面Ｂ２、さらに１　工Ｃバンプ２ｂ
とフィンガー１１１とのボンディング面Ｂ５についても
同様に判定するこ・とができる。
（発明の効果〕 この工うに、本発明は、レーザー、赤外線又は超音波等
を用い、ボンディングの品質を非破嘱で検査、判定でき
ることから、試料数を限定することなく、無制限に検査
することが可能であり、ボンディング品質の管理水準を
飛躍的に向上させることができる。又、非接触であシ、
信号処理は電気的に行なう方式であるため、微細部の測
定も容易であり、処理速度が速く、多量生産にも適して
いる。
【図面の簡単な説明】
第１図は本発明のボンディング検査装置の信号伝達経路
図の一例である。 第２図（ＩＬ）　、　（１））は本発明のボンディング
断面から見た発信源〜ボンディング面、受信部での信号
の移動状態を示す図である、 Ｎ３図、第４図は従来のポンディング品質の検査方式を
示す図である。 Ａ・・・発信源 １３（１，２，５）・・・ボンディング面Ｃ・・・受信
ｓ　　　　　Ｄ・・・伝達回路Ｘ・・・論理計算部　　
　Ｆ・・・判定部Ｇ・・・モニター ト・・基板　　　　　　１ａ・・・リードパターン１ｂ
・・・フィンガー　　２・・・ＩＣ２ａ・・・ＩＣパッ
ド　　２ｂ・・・工Ｃバンプ５・・・ワイヤー　　　　
４・・・ゲージ４ａ・・・測定端子

Claims (1)

    【特許請求の範囲】
  1. 　発信源、前記発信源の信号をボンディング面に当てた
    二次信号を受信する受信部、前記受信部の信号を伝達す
    る伝達回路部、伝達された信号により論理計算処理をす
    る論理計算部、前記論理計算部により計算した結果によ
    り良否の判定をする判定部及び、前記受信部の信号をモ
    ニターするモニター部からなるボンディング検査装置に
    おいて、発信源にレーザー赤外線又は超音波等を用い、
    非破壊でボンディング品質を判定することを特徴とする
    ボンディング検査装置。
JP59267684A 1984-12-19 1984-12-19 ボンデイング検査装置 Pending JPS61144837A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59267684A JPS61144837A (ja) 1984-12-19 1984-12-19 ボンデイング検査装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59267684A JPS61144837A (ja) 1984-12-19 1984-12-19 ボンデイング検査装置

Publications (1)

Publication Number Publication Date
JPS61144837A true JPS61144837A (ja) 1986-07-02

Family

ID=17448092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267684A Pending JPS61144837A (ja) 1984-12-19 1984-12-19 ボンデイング検査装置

Country Status (1)

Country Link
JP (1) JPS61144837A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276731A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 超音波ボンデイング検査方法及び装置
US4872052A (en) * 1986-12-03 1989-10-03 View Engineering, Inc. Semiconductor device inspection system
US6339337B1 (en) 1997-03-27 2002-01-15 Nec Corporation Method for inspecting semiconductor chip bonding pads using infrared rays

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276731A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 超音波ボンデイング検査方法及び装置
JPH0548624B2 (ja) * 1985-09-30 1993-07-22 Toshiba Kk
US4872052A (en) * 1986-12-03 1989-10-03 View Engineering, Inc. Semiconductor device inspection system
US6339337B1 (en) 1997-03-27 2002-01-15 Nec Corporation Method for inspecting semiconductor chip bonding pads using infrared rays

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