JPS61144016A - 液相エピタキシヤル結晶成長装置 - Google Patents

液相エピタキシヤル結晶成長装置

Info

Publication number
JPS61144016A
JPS61144016A JP26794184A JP26794184A JPS61144016A JP S61144016 A JPS61144016 A JP S61144016A JP 26794184 A JP26794184 A JP 26794184A JP 26794184 A JP26794184 A JP 26794184A JP S61144016 A JPS61144016 A JP S61144016A
Authority
JP
Japan
Prior art keywords
chamber
partition
crystal growth
door
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26794184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260053B2 (enrdf_load_html_response
Inventor
Takao Oda
織田　隆雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP26794184A priority Critical patent/JPS61144016A/ja
Publication of JPS61144016A publication Critical patent/JPS61144016A/ja
Publication of JPH0260053B2 publication Critical patent/JPH0260053B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP26794184A 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置 Granted JPS61144016A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26794184A JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26794184A JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS61144016A true JPS61144016A (ja) 1986-07-01
JPH0260053B2 JPH0260053B2 (enrdf_load_html_response) 1990-12-14

Family

ID=17451729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26794184A Granted JPS61144016A (ja) 1984-12-17 1984-12-17 液相エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS61144016A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101157201B1 (ko) 2010-04-30 2012-06-20 주식회사 테라세미콘 Ｃｉｇｓ층 형성장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101157201B1 (ko) 2010-04-30 2012-06-20 주식회사 테라세미콘 Ｃｉｇｓ층 형성장치

Also Published As

Publication number Publication date
JPH0260053B2 (enrdf_load_html_response) 1990-12-14

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