JPS6114182Y2 - - Google Patents

Info

Publication number

JPS6114182Y2

JPS6114182Y2 JP2568881U JP2568881U JPS6114182Y2 JP S6114182 Y2 JPS6114182 Y2 JP S6114182Y2 JP 2568881 U JP2568881 U JP 2568881U JP 2568881 U JP2568881 U JP 2568881U JP S6114182 Y2 JPS6114182 Y2 JP S6114182Y2

Authority

JP

Japan

Prior art keywords

matching circuit

ultra

width

impedance

high frequency

Prior art date

1981-02-25

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

• Espacenet
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• 239000004065 semiconductor Substances 0.000 claims description 24
• 229910052751 metal Inorganic materials 0.000 claims description 5
• 239000002184 metal Substances 0.000 claims description 5
• 239000000758 substrate Substances 0.000 claims description 4
• 230000005669 field effect Effects 0.000 description 5
• 238000005219 brazing Methods 0.000 description 4
• 239000003990 capacitor Substances 0.000 description 4
• 230000005284 excitation Effects 0.000 description 3
• PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
• 238000006243 chemical reaction Methods 0.000 description 2
• 239000004020 conductor Substances 0.000 description 2
• 230000007423 decrease Effects 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 101710187785 60S ribosomal protein L1-A Proteins 0.000 description 1
• 101710187786 60S ribosomal protein L1-B Proteins 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• 230000003321 amplification Effects 0.000 description 1
• 239000003989 dielectric material Substances 0.000 description 1
• KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000003199 nucleic acid amplification method Methods 0.000 description 1
• 230000003071 parasitic effect Effects 0.000 description 1
• 230000005855 radiation Effects 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 239000010409 thin film Substances 0.000 description 1
• 238000003466 welding Methods 0.000 description 1