JPS61134080A - Thin film solar cell - Google Patents

Thin film solar cell

Info

Publication number
JPS61134080A
JPS61134080A JP59256018A JP25601884A JPS61134080A JP S61134080 A JPS61134080 A JP S61134080A JP 59256018 A JP59256018 A JP 59256018A JP 25601884 A JP25601884 A JP 25601884A JP S61134080 A JPS61134080 A JP S61134080A
Authority
JP
Japan
Prior art keywords
substrate
film solar
solar cell
thin film
receiving surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59256018A
Other languages
Japanese (ja)
Inventor
Koichi Yamasaka
山坂 孝一
Koshiro Mori
森 幸四郎
Zenichiro Ito
伊藤 善一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59256018A priority Critical patent/JPS61134080A/en
Publication of JPS61134080A publication Critical patent/JPS61134080A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To enable the simplification of the process by unnecessitating the guide of photoelectromotive force to the back by means of leads, by a method wherein the photoelectromotive force of the titled element formed on a flexible insulation substrate is led out to the substrate back opposite to the photo receiving surface. CONSTITUTION:An amorphous Si layer 3 shown by a one-dot chain line is kept on metallic electrodes 2 formed on the flexible insulation substrate 1. Further, clear electrodes 4 shown by broken lines are formed so as to oppose the metallic electrodes 2. It is possible to lead the photoelectromotive force out of the substrate back by bending the projecting terminals 5 of the electrodes 2 and 4 together with the substrate to the substrate back opposite to the photo receiving surface.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、薄膜太陽電池の出力端子の取出し構造に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a structure for taking out an output terminal of a thin film solar cell.

従来の技術 近年、薄膜太陽電池は、電卓、腕時計等の電子機器の内
蔵電源として広く用いられているが、一般にガラス基板
の太陽電池が用いられていた。ガラス基板eをもつ薄膜
太陽電池の場合、第6図に示すようにガラス基板6側か
ら光が入射されるため、光起電力は受光面の裏側から取
り出すことができた。一般に電子機器の回路部9は、受
光面の裏側に設置されているために、回路部と出力端子
アとの接続は、板バネ8等による圧着により、容易に接
続が可能であった。
BACKGROUND OF THE INVENTION In recent years, thin-film solar cells have been widely used as built-in power sources for electronic devices such as calculators and wristwatches, but solar cells with glass substrates have generally been used. In the case of a thin film solar cell having a glass substrate e, as shown in FIG. 6, since light was incident from the glass substrate 6 side, the photovoltaic force could be taken out from the back side of the light-receiving surface. Generally, the circuit section 9 of an electronic device is installed on the back side of the light-receiving surface, so that the circuit section and the output terminal A can be easily connected by crimping using the leaf spring 8 or the like.

しかし、電子機器の薄型化に伴い、太陽電池の薄型化や
可撓性が要求されるようになり、基板は、耐熱性樹脂等
で絶縁化された金属薄板、あるいは耐熱樹脂フィルム等
が用いられるようになったが、゛これらは第7図に示す
ように素子受光面と出力端子とは同一面上にあるため、
受光面の裏側から光起電力を取り出すことはできず、リ
ード線全接続して導かねばならなかった。
However, as electronic devices become thinner, solar cells are required to be thinner and more flexible, and the substrate is now made of a thin metal plate insulated with heat-resistant resin or a heat-resistant resin film. However, as shown in Figure 7, the element light-receiving surface and the output terminal are on the same plane, so
It was not possible to extract the photovoltaic force from the back side of the light-receiving surface, and all lead wires had to be connected to guide it.

発明が解決しようとする問題点 本発明は透光性のない絶縁可撓性基板を用いた薄膜太陽
電池でも、リード線の接続なしに、光起電力全受光面の
裏側に導き、板バネ等の圧着により、容易に回路部との
接続を可能とするための出力端子の取出し構造の改良を
目的とする。
Problems to be Solved by the Invention The present invention is capable of directing the entire photovoltaic power to the back side of the light-receiving surface without connecting lead wires, even in thin-film solar cells using an insulating flexible substrate that is not translucent. The purpose is to improve the output terminal extraction structure so that it can be easily connected to the circuit part by crimping.

問題点全解決するための手段 上記問題点を解決する本発明の技術的な手段は、出力端
子部分を突出構造とし、その突出部分全絶縁a基板の裏
面側へ折り曲げたものである。
Means for Solving All Problems The technical means of the present invention for solving the above-mentioned problems is to provide the output terminal portion with a protruding structure, and to bend the protruding portion toward the back side of the fully insulated a-substrate.

作用 この技術的手段による突出端子構造を有する薄膜太陽電
池は、通常の方法に従って作成され、レーザー加工、金
型による打ち抜きによって、第1図〜第5図に示すよう
な適当な形状に加工される。
Operation A thin film solar cell having a protruding terminal structure by this technical means is produced according to a normal method, and processed into an appropriate shape as shown in Figs. 1 to 5 by laser processing and punching with a mold. .

さらに突出部分?受光面の裏側へ折り曲げることによっ
て、素子の光起電力を受光面の裏側から取り出すことが
可能となる。
More protruding parts? By bending it to the back side of the light receiving surface, it becomes possible to take out the photovoltaic force of the element from the back side of the light receiving surface.

実施例 以下、本発明の一実施例を添付図面にもとづいて説明す
る。
Embodiment Hereinafter, one embodiment of the present invention will be described based on the accompanying drawings.

第1図において、1は可撓性を有する絶縁性基板であり
、実線はこの基板1上に形成された金属電極2全示す。
In FIG. 1, reference numeral 1 denotes a flexible insulating substrate, and solid lines indicate all the metal electrodes 2 formed on this substrate 1. As shown in FIG.

さらに、この金属電極2の上部には一点鎖線で示した非
晶質シリコン層3が堆積され、さらに金属電極2に対向
するように破線で示される透明電極4が形成されている
。5は金属電極2及び透明電極4の突出端子部であり、
第2図に示すように突出端子部5を基板とともに受光面
とは反対側の基板裏面に折り曲げて、光起電力を基板裏
面より取り出すことが可能となる。
Further, an amorphous silicon layer 3 shown by a dashed line is deposited on the metal electrode 2, and a transparent electrode 4 shown by a broken line is formed to face the metal electrode 2. 5 is a protruding terminal portion of the metal electrode 2 and the transparent electrode 4;
As shown in FIG. 2, by bending the protruding terminal portion 5 together with the substrate to the back surface of the substrate opposite to the light-receiving surface, it becomes possible to take out the photovoltaic force from the back surface of the substrate.

次に本発明の他の実施例について説明する。Next, other embodiments of the present invention will be described.

第3図は突出端子部すなわち、金属電極2及び透明電極
4を各々をデバイスの側方に配置したもの、第4図、第
6図は金属電極2.透明電極4からなる一対の端子部f
t1ケ所にまとめてそれぞれデバイスの上方、側方に配
置したものである。これらはいずれも端子部全基板とと
もに基板裏面へ折曲げることができる。以上4通りの端
子部の配置を示したが、デバイスの任意の場所に端子部
を設けることが可能である。
FIG. 3 shows a protruding terminal portion, that is, a metal electrode 2 and a transparent electrode 4 are each arranged on the side of the device, and FIGS. A pair of terminal portions f consisting of transparent electrodes 4
They are arranged in t1 locations above and to the sides of the device, respectively. Both of these can be bent to the back surface of the board together with the terminal portion of the entire board. Although four types of arrangement of the terminal portion have been shown above, it is possible to provide the terminal portion at any location on the device.

発明の効果 本発明によって、可撓性全盲するP3Rf!+基板上に
形成された薄膜太陽電池の光起電刃金、受光面とは反対
側の基板裏側に導き出すことにより、従来のようにリー
ド線によって光起電刃金裏面に導く必要がなくなり、工
程の簡略化をはかることが可能である。
Effects of the Invention The present invention enables P3Rf to become completely blind and flexible! + By leading the photovoltaic blade of the thin-film solar cell formed on the substrate to the back side of the substrate opposite to the light-receiving surface, there is no need to lead the photovoltaic blade to the back side of the photovoltaic blade using a lead wire as in the past. It is possible to simplify the process.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施例における薄膜太陽電池?示す図
、第2図はその突出端子部を基板裏側へ折曲げた図、第
3図、第4図、第6図は本発明の別な実施例?示す図、
第6図は従来のガラス基板金もつ薄膜太陽電池金示す図
、第7図は従来の可撓性全盲する絶縁性基板上に形成さ
れた薄膜太陽電池全示す図である。 1・・・・・・可撓性を有する絶縁性基板、2・・・・
・・金属電極、3・・・・・・非晶質シリコン層、4・
・・・・・透明電極、5・−・・・・突出端子部、6・
・・・・・ガラス基板、7・・・・・・出力端子部、8
・・・・・・板バネ、9・・・・・・回路部。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図 4−−−1L1月電不に 5−矧11卸 第2図 第3図 第5rlA 、ダ 第6図
Figure 1 shows a thin film solar cell according to an embodiment of the present invention. 2 is a diagram with the protruding terminal portion bent toward the back side of the board, and FIGS. 3, 4, and 6 are other embodiments of the present invention. diagram showing,
FIG. 6 is a diagram showing a conventional thin film solar cell having a glass substrate, and FIG. 7 is a diagram showing a conventional thin film solar cell formed on a flexible completely blind insulating substrate. 1... Flexible insulating substrate, 2...
...Metal electrode, 3...Amorphous silicon layer, 4.
...Transparent electrode, 5.--Protruding terminal part, 6.
...Glass substrate, 7...Output terminal section, 8
...Plate spring, 9...Circuit section. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 4 --- 1L1 month electricity supply 5 - 11 wholesale Figure 2 Figure 3 Figure 5rlA, Da Figure 6

Claims (1)

【特許請求の範囲】[Claims]  可撓性を有する絶縁性基板上に形成された薄膜太陽電
池であって、その出力端子部を前記絶縁性基板の裏側に
導設した薄膜太陽電池。
A thin film solar cell formed on a flexible insulating substrate, the thin film solar cell having an output terminal portion connected to the back side of the insulating substrate.
JP59256018A 1984-12-04 1984-12-04 Thin film solar cell Pending JPS61134080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59256018A JPS61134080A (en) 1984-12-04 1984-12-04 Thin film solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59256018A JPS61134080A (en) 1984-12-04 1984-12-04 Thin film solar cell

Publications (1)

Publication Number Publication Date
JPS61134080A true JPS61134080A (en) 1986-06-21

Family

ID=17286764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59256018A Pending JPS61134080A (en) 1984-12-04 1984-12-04 Thin film solar cell

Country Status (1)

Country Link
JP (1) JPS61134080A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334472A (en) * 1989-06-30 1991-02-14 Taiyo Yuden Co Ltd Amorphous semiconductor photovoltaic element
JPH04116160U (en) * 1991-03-29 1992-10-16 三洋電機株式会社 photovoltaic device
US5743007A (en) * 1995-01-17 1998-04-28 Matsushita Electric Industrial Co., Ltd. Method of mounting electronics component
WO2009019940A1 (en) * 2007-08-07 2009-02-12 Sharp Kabushiki Kaisha Solar cell module
WO2009116394A1 (en) * 2008-03-17 2009-09-24 シャープ株式会社 Solar battery module and method for manufacturing solar battery module
JP2009224598A (en) * 2008-03-17 2009-10-01 Sharp Corp Solar cell module, and manufacturing method of solar cell module
JP2009224597A (en) * 2008-03-17 2009-10-01 Sharp Corp Solar cell module, and manufacturing method of solar cell module
JP2012070011A (en) * 2012-01-10 2012-04-05 Sharp Corp Solar cell module

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0334472A (en) * 1989-06-30 1991-02-14 Taiyo Yuden Co Ltd Amorphous semiconductor photovoltaic element
JPH04116160U (en) * 1991-03-29 1992-10-16 三洋電機株式会社 photovoltaic device
US5743007A (en) * 1995-01-17 1998-04-28 Matsushita Electric Industrial Co., Ltd. Method of mounting electronics component
WO2009019940A1 (en) * 2007-08-07 2009-02-12 Sharp Kabushiki Kaisha Solar cell module
JP2009043842A (en) * 2007-08-07 2009-02-26 Sharp Corp Solar battery module
WO2009116394A1 (en) * 2008-03-17 2009-09-24 シャープ株式会社 Solar battery module and method for manufacturing solar battery module
JP2009224598A (en) * 2008-03-17 2009-10-01 Sharp Corp Solar cell module, and manufacturing method of solar cell module
JP2009224597A (en) * 2008-03-17 2009-10-01 Sharp Corp Solar cell module, and manufacturing method of solar cell module
JP2012070011A (en) * 2012-01-10 2012-04-05 Sharp Corp Solar cell module

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