JPS61133653A - Semiconductor compound element - Google Patents

Abstract

PURPOSE:To alleviate design restriction, by making the surface of an electrode having a control electrode of a semiconductor element to face a metallic connecting body, fixing the electrode between both parts, and providing an opening part, through which a lead wire for the control electrode is taken out sideward, at said electrode. CONSTITUTION:A thyristor chip 14 is assembled so that the cathode surface having a gate electrode, which is a control electrode, faces downward. Of electrode molybdenum parts 13 and 15 at the upper and lower sides of the chip 14, the cathode molybdenum part 15 is provided at the lower side of the chip 14. A hole 15, through which a gate lead 17 is inserted, is provided at the center of the molybdenum part 15. An opening part 18a through which the gate lead 17 is taken out sideward, is provided in a cathode electrode 18. The cathode electrode 18 is inserted between the cathode molybdenum part 15 and a metallic connecting layer 12. The gate lead 17 is covered by an insulating flexible tape 17 in order to prevent contact between the gate lead 17 and a cathode electrode 18.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor composite device, and particularly to the structure of a thyristor module.

[Conventional technology]

Semiconductor composite devices, especially semiconductor power modules, contain multiple semiconductors in a single resin container, are internally insulated, or have a structure or external shape that allows for easy mounting in a control unit. The market has been expanding rapidly in recent years due to factors such as:

Among these semiconductor power modules, thyristor modules include modules with series double arm connection as shown in Fig. 5 and modules with common cathode connection as shown in Fig. 6. As shown in the figure. In Figure 5.6, 1 is Cyrisk, 2
~4 is a terminal. Further, in FIG. 7, 10 is a metal base plate, 11 is an insulating substrate, 12 is a metal connection layer (metal connection body), 14 is a silice chip (semiconductor element), 13
15 is an anode molybdenum that connects the anode of the thyristor chip 14 and the metal connection layer 12, 15 is a cathode molybdenum that connects the cathode of the thyristor chip 14 and the electrode [16], and 17 is a gate lead.

[Problem that the invention seeks to solve]

Conventional semiconductor composite devices are configured as described above.
Since the thyristor 14 is assembled with its gate electrode (control electrode) side facing upward, that is, its cathode side, there is a limit to the circuit connections inside the module, which is a design constraint for this type of module.

The anode molybdenum 13 and cathode molybdenum 15 are fixed in advance to the anode and cathode surfaces of the thyristor chip 14 by high-temperature solder, respectively, and the anode molybdenum 13 or cathode molybdenum 15 is bonded to the metal base plate IO and the metal base plate 10 by low-temperature solder. When fixing the cathode molybdenum 15 to the metal connection layer 12 on the insulating substrate 11 of
This is because the gate electrode glue 17, which is the control electrode, could not be taken out if it was fixed to the gate electrode.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductor composite device that can increase the degree of freedom in internal connections and alleviate design constraints.

[Means for solving problems]

The semiconductor composite device according to the present invention has an electrode surface having a control electrode of the semiconductor device facing a metal connection body, and
An electrode is fixed between the two, and an opening is formed in the electrode for taking out the lead wire of the control electrode laterally.

[Effect]

In this invention, since the electrode surface of the semiconductor element having the control electrode is coupled to the metal connection body, any internal wiring is possible.

〔Example〕

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 and 2 show a semiconductor composite device according to an embodiment of the present invention, in which the same reference numerals as in FIGS. 5 to 7 indicate the same or corresponding parts, and the thyristor chip 14 has a control electrode. It is assembled with the cathode side facing down with the gate electrode being .

Here, the upper and lower electrode warped densities 1 of the thyristor chip 14 are
3.15, the cathode molybdenum 15 is located below the chip 14, contrary to FIG. 7, and has a hole 15a in the center thereof through which the gate lead 17 is passed. A cathode electrode having an opening 18a for drawing out the gate lead 17 laterally is inserted between the cathode molybdenum 15 and the metal connection layer 12. This cathode electrode 18
The structure of is shown enlarged in FIG.

By using such a cathode electrode 18, it becomes possible to assemble the thyristor chip 14 with the cathode surface facing downward, that is, with the cathode surface fixed to the metal connection layer 12. This cathode electrode 18 has a structure in which the cathode molybdenum 15 between this and the silice chip 14 has a hole 15a only in the gate electrode portion, so it does not necessarily have the structure shown in FIG. 2(a). As shown in FIG. 2, it is also possible to have a structure in which the opening 18a is cut from the -side.

Further, in FIG. 1, in order to prevent the gate lead 17 from coming into contact with the cathode electrode 18, the gate lead 17 is covered with an insulating flexible tube, such as a polyethylene tube 19.

In the semiconductor composite device of this example as described above, a cathode electrode from which the gate lead can be taken out from the side is used, so the thyristor can be assembled with the cathode surface facing downward, and this allows the inside of the thyristor module to be Wire connections and the arrangement of terminals drawn out to the outside of the module can be freely arranged, design constraints are significantly relaxed, and the internal structure is simplified, making it possible to improve quality and reduce costs.

Representative examples are shown in FIGS. 3 and 4. FIG. 3 is an example of a circuit configuration that can be easily made by applying the present invention to at least one thyristor assembly structure in the semiconductor composite device with the double arm connection and terminal arrangement shown in FIG. In this case, terminal 2 becomes the common terminal.

Similarly, FIG. 4 also shows one example of a circuit configuration in which the present invention is applied to at least one thyristor assembly structure in the semiconductor composite device having the common cathode connection and terminal arrangement shown in FIG.
This is an example. In this case, in FIG. 6, the terminal 3 is the cathode common terminal, whereas in FIG. 4, the terminal 2 is the cathode common terminal, but by applying the present invention, both the cathode i1 It is easy to make it into a terminal.

On the other hand, it is impossible to use the terminal 2 in FIG. 6 as a common cathode terminal unless the present invention is applied.

In addition, although the above embodiment was explained using a thyristor as an example,
The present invention can be similarly applied to other semiconductor devices having a multipolar structure including control electrodes.

〔Effect of the invention〕

As described above, according to the semiconductor composite device according to the present invention,
The electrode surface having the control electrode of the semiconductor element is made to face the metal connection body, the electrode is fixed between the two, and an opening is formed in this electrode for taking out the lead wire of the control electrode laterally. This has the effect of increasing the degree of freedom in the internal wiring of the module and significantly easing design constraints.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of a semiconductor composite device according to an embodiment of the present invention, FIG. 2(a) is a perspective view of a cathode electrode 18 in the composite device, and FIG. A perspective view, FIGS. 3 and 4 are both circuit configuration diagrams showing connection examples of the above composite element, FIGS. 5 and 6 are both circuit configuration diagrams showing connection examples of a conventional semiconductor composite element, and FIG.
The figure is a configuration diagram of a conventional semiconductor composite device. In the figure, 12 is a metal connection layer (money connection), 14 is a thyristor chip (semiconductor element), 17 is a gate lead (lead wire), 18 is a cathode electrode, and 18a is an opening. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A metal connection body containing at least two semiconductor elements each having a control electrode formed on one of the electrode surfaces in one container, and the semiconductor elements being fixed to the bottom of the container via an insulator. In a semiconductor composite device in which the semiconductor device is coupled to the semiconductor device and the semiconductor device is arbitrarily connected inside the container,
The electrode surface of at least one semiconductor element is opposed to the metal connection body, and an opening is provided between the electrode surface and the metal connection body for drawing out the lead wire taken out from the control electrode to the side. 1. A semiconductor composite device characterized by having fixed electrodes.