JPS61128817U - - Google Patents
Info
- Publication number
- JPS61128817U JPS61128817U JP1234785U JP1234785U JPS61128817U JP S61128817 U JPS61128817 U JP S61128817U JP 1234785 U JP1234785 U JP 1234785U JP 1234785 U JP1234785 U JP 1234785U JP S61128817 U JPS61128817 U JP S61128817U
- Authority
- JP
- Japan
- Prior art keywords
- diode
- terminal
- gate terminal
- high frequency
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003321 amplification Effects 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Amplifiers (AREA)
Description
第１図は、本考案の高周波増幅回路の一実施例
の回路図であり、第２図は、ＶＨＦチユーナ部に
本考案のダイオードを介装した高周波増幅回路を
用いたコンビネーシヨンチユーナの一応用例の回
路図であり、第３図は、従来の高周波増幅回路の
回路図である。
１：４極絶縁ゲート型電界効果トランジスタ、
１５：ダイオード、Ｇ１：第１のゲート端子、Ｇ
２：第２のゲート端子、Ｓ：ソース端子、Ｄ：ド
レイン端子。
FIG. 1 is a circuit diagram of an embodiment of the high frequency amplifier circuit of the present invention, and FIG. 2 is a circuit diagram of a combination tuner using the high frequency amplifier circuit in which the diode of the present invention is inserted in the VHF tuner section. FIG. 3 is a circuit diagram of a conventional high frequency amplification circuit. 1: 4-pole insulated gate field effect transistor,
15: Diode, G1: First gate terminal, G
2: second gate terminal, S: source terminal, D: drain terminal.
Claims (1)
た高周波増幅回路であつて、第１のゲート端子に
入力信号を与え、第２のゲート端子にＡＢＣ電圧
を与えるとともに、この第２のゲート端子とソー
ス端子とを高周波的に接地し、さらに、ドレイン
端子にダイオードの一端を接続し、このダイオー
ドを介して前記ドレイン端子に電力を与えるとと
もに、このダイオードの他端より出力信号を導出
させるように構成されていることを特徴とする高
周波増幅回路。 A high-frequency amplifier circuit using a four-pole insulated gate field effect transistor, in which an input signal is applied to a first gate terminal, an ABC voltage is applied to a second gate terminal, and the second gate terminal and the source terminal is grounded at a high frequency, and one end of a diode is connected to the drain terminal, power is applied to the drain terminal via the diode, and an output signal is derived from the other end of the diode. A high frequency amplification circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1234785U JPS61128817U (en) | 1985-01-31 | 1985-01-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1234785U JPS61128817U (en) | 1985-01-31 | 1985-01-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61128817U true JPS61128817U (en) | 1986-08-12 |
Family
ID=30495322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1234785U Pending JPS61128817U (en) | 1985-01-31 | 1985-01-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61128817U (en) |
-
1985
- 1985-01-31 JP JP1234785U patent/JPS61128817U/ja active Pending
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