JPS61125066A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61125066A
JPS61125066A JP24600884A JP24600884A JPS61125066A JP S61125066 A JPS61125066 A JP S61125066A JP 24600884 A JP24600884 A JP 24600884A JP 24600884 A JP24600884 A JP 24600884A JP S61125066 A JPS61125066 A JP S61125066A
Authority
JP
Japan
Prior art keywords
extended
layer
substrate
terminating resistor
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24600884A
Other languages
Japanese (ja)
Inventor
Akira Mizuno
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP24600884A priority Critical patent/JPS61125066A/en
Publication of JPS61125066A publication Critical patent/JPS61125066A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49877Carbon, e.g. fullerenes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/647Resistive arrangements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

Abstract

PURPOSE:To suppress the increase in a chip area and to omit the forming of individual resistor elements, by extending a Cr film from a connecting part to a bump when an electrode is formed by a CCB method, forming the extended part on a substrate, and using the extended part as a terminating resistor. CONSTITUTION:In a connecting part 9 between a solder bump 2 and a signal wiring 8 in a wiring substrate 7, a Cr layer 6, a C layer 5 and an Au layer 4 are sequentially formed from the lower side. The Cr layer 6 is extended from the connecting part 9 on the substrate 7 and an extended part 10 is used as a terminating resistor. It is recommended that the terminating resistor 10 is provided between electrodes, which connect chips and signal wirings on the substrate 7, and in a space, which is not used before, within an area where a chip 1 is mounted.
JP24600884A 1984-11-22 1984-11-22 Semiconductor device Pending JPS61125066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24600884A JPS61125066A (en) 1984-11-22 1984-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24600884A JPS61125066A (en) 1984-11-22 1984-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61125066A true JPS61125066A (en) 1986-06-12

Family

ID=17142083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24600884A Pending JPS61125066A (en) 1984-11-22 1984-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61125066A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310139A (en) * 1987-06-12 1988-12-19 Hitachi Ltd Semiconductor device and its manufacture
EP0568715A1 (en) * 1992-05-06 1993-11-10 Till Keesmann Circuit board
JP2007103840A (en) * 2005-10-07 2007-04-19 Nec Electronics Corp Method of manufacturing electronic circuit device
JP2007103816A (en) * 2005-10-07 2007-04-19 Nec Electronics Corp Interconnect substrate and electronic circuit device
CN1329981C (en) * 2003-06-30 2007-08-01 夏普株式会社 Semiconductor carrier film, and semiconductor device and liquid crystal module using the same
US8446004B2 (en) 2004-06-04 2013-05-21 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US9923128B2 (en) 2013-08-27 2018-03-20 Lumens Co., Ltd. Light emitting device package and backlight unit having the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63310139A (en) * 1987-06-12 1988-12-19 Hitachi Ltd Semiconductor device and its manufacture
EP0568715A1 (en) * 1992-05-06 1993-11-10 Till Keesmann Circuit board
CN1329981C (en) * 2003-06-30 2007-08-01 夏普株式会社 Semiconductor carrier film, and semiconductor device and liquid crystal module using the same
US8446004B2 (en) 2004-06-04 2013-05-21 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US8932886B2 (en) 2004-06-04 2015-01-13 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
JP2007103840A (en) * 2005-10-07 2007-04-19 Nec Electronics Corp Method of manufacturing electronic circuit device
JP2007103816A (en) * 2005-10-07 2007-04-19 Nec Electronics Corp Interconnect substrate and electronic circuit device
US9923128B2 (en) 2013-08-27 2018-03-20 Lumens Co., Ltd. Light emitting device package and backlight unit having the same

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