JPS61124159A - Semiconductor package and manufacture thereof - Google Patents

Semiconductor package and manufacture thereof

Info

Publication number
JPS61124159A
JPS61124159A JP59245236A JP24523684A JPS61124159A JP S61124159 A JPS61124159 A JP S61124159A JP 59245236 A JP59245236 A JP 59245236A JP 24523684 A JP24523684 A JP 24523684A JP S61124159 A JPS61124159 A JP S61124159A
Authority
JP
Japan
Prior art keywords
metal
aluminum
wirings
metal frame
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59245236A
Other languages
Japanese (ja)
Inventor
Hisashi Nakamura
中村　恒
Tsutomu Ishiguro
石黒　勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP59245236A priority Critical patent/JPS61124159A/en
Publication of JPS61124159A publication Critical patent/JPS61124159A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/4805—Shape
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    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

PURPOSE:To improve the bonding strength of wirings and the reliability by securing a semiconductor chip onto a metal frame, and wire connecting the external connecting terminal with a metal aluminum layer by wirings. CONSTITUTION:A metal foil 1 on a hoop made or iron-nickel alloy is continuously punched by a die to form a metal frame having desired pattern, and a metal aluminum layer 2 is partly formed on the frame. Nickel plating is thinly formed on the metal foil, aluminum is partly precipitated by a vacuum depositing method to improve the bondability between the layer 2 and the foil 1. A die bonding is treated, the external connecting terminal of a semiconductor chip 3 and the layer 2 are connected by fine metal wirings 4 of gold or aluminum wirings by a thermal press-bonding or supersonic wave method, the chip 3 is then sealed with molding resin 5 to form a semiconductor package. Thus, when aluminum wirings are used, the bonding strength is excellent, and the reliability of connection is improved.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は広範な電子機器に用いられる半導体パッケージ
とその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor package used in a wide variety of electronic devices and a method for manufacturing the same.

従来例の構成とその問題点 近年、半導体技術の技術的進歩はめざましいものがあり
、その利用分野は電子機器分野のみならず他の産業分野
へと広範に波及し、その需要は飛躍的な増加をたどって
いる。この半導体のパッケージ形態は半導体素子（チッ
プ）の集積度や接続端子数、さらにはその用途に応じて
従来から様々な形状や構造を有するものが用いられてい
るが、現在もっとも一般的に広く用いられているものは
樹脂モールドタイプのデュアルインラインパッケージで
ある。Conventional configurations and their problems In recent years, there have been remarkable technological advances in semiconductor technology, and its application has spread not only to the electronic equipment field but also to other industrial fields, and the demand for it has increased dramatically. is following. This semiconductor package has been used in various shapes and structures depending on the degree of integration of the semiconductor element (chip), the number of connection terminals, and the application, but it is currently the most commonly used. The one currently available is a resin mold type dual in-line package.

このパッケージは鉄や銅などの金属箔を金型を用いて所
望の形状に打抜き、部分的に金などの貴金属をメッキし
て作ったメタルフレームに、半導３べ一７′ 体ＩＣやＬＳｉなどの半導体チップをダイスボンドして
固定し、この半導体チップの外部接続端子トメタルフレ
ームの金めつき部分とを金線やアルミニウム線などの金
属細Ｚ線を使用して、ボンディングを行ない、最終的に
半導体チップを粉末状のエポキシ樹脂を用いてトランス
ファーモールド法によって封止したものである。This package is made by punching metal foil such as iron or copper into the desired shape using a mold, and partially plating precious metals such as gold to make a metal frame. A semiconductor chip, such as the Generally, a semiconductor chip is sealed using a powdered epoxy resin using a transfer molding method.

ところが、このような構成から成る半導体パッケージで
は、メタルフレームに半導体チップと安定な接続を与え
るために必要な部分に金などの高価な金属を部分的にメ
ッキする必要があり、またそのメッキプロセスが煩雑で
あるためにコストが高くつくことはもとより、半導体チ
ップと金属細線で接続する場合、特にアルミニウム線を
使用してワイヤーボンディングを行う場合に金とアルミ
ニウム間のボンデング強度が十分に得られにくいために
、信頼性テストにおいてアルミニウム線が金めつき層か
らはぐり離、断線する不良が発生しやすいこと、さらに
は、高温熱処理を行なうと、金とアルミニウムの接合部
にパープルブレイクと称する金属間化合物が生成し、と
れがアルミニウムと金との接合不良をもたらすなど、ボ
ンディングの信頼性をそこなうなどの不都合があった。However, in semiconductor packages with such a configuration, it is necessary to partially plate expensive metals such as gold on the parts necessary to provide a stable connection between the metal frame and the semiconductor chip, and the plating process is expensive. Not only is it expensive due to its complexity, but it is also difficult to obtain sufficient bonding strength between gold and aluminum when connecting semiconductor chips with thin metal wires, especially when wire bonding is performed using aluminum wires. Furthermore, during reliability tests, aluminum wires tend to separate from the gold-plated layer and break, resulting in wire breakage.Furthermore, when high-temperature heat treatment is performed, an intermetallic compound called purple break occurs at the gold-aluminum joint. There are disadvantages such as generation and cracking, which leads to poor bonding between aluminum and gold, impairing the reliability of bonding.

発明の目的 本発明の目的は、コストが安価でしかも半導体チップと
のワイヤーボンディングにおいて、メタルフレームと金
属細線とのボンディング強度にすぐれかつ接続の信頼性
が極めてすぐれた半導体パッケージと、その製造方法を
提供することである。OBJECTS OF THE INVENTION An object of the present invention is to provide a semiconductor package that is low in cost, has excellent bonding strength between a metal frame and a thin metal wire, and has extremely high connection reliability in wire bonding with a semiconductor chip, and a method for manufacturing the same. It is to provide.

発明の構成 本発明による半導体パッケージは、金属箔を加工して作
ったメタルフレームの一部分に金属アルばニウム層を設
け、このメタルフレーム上に半導体チップを固定して、
その外部接続端子と金属アルミニウム層とがワイヤーで
接続したものであり、メタルフレームに金属アルミニウ
ム層をポンディングパッドをして設けたことにより、ワ
イヤーとのボンディング強度が向上し、その信頼性が著
しく改善されるものである。Structure of the Invention The semiconductor package according to the present invention includes a metal aluminum layer provided on a part of a metal frame made by processing metal foil, a semiconductor chip fixed on the metal frame,
The external connection terminal and the metal aluminum layer are connected by wire, and by providing the metal frame with the metal aluminum layer as a bonding pad, the bonding strength with the wire is improved and its reliability is significantly improved. It will be improved.

実施例の説明 以下本発明の実施例を図面を参照しながら詳細５ページ に説明する。Description of examples The details of the embodiments of the present invention will be explained on 5 pages with reference to the drawings below. Explain.

図は本発明の一実施例における半導体パッケージの断面
図である。図において１は金属箔、２は金属アルミニウ
ム層、３は半導体チップ、４は金属細線、６はモールド
樹脂である。The figure is a sectional view of a semiconductor package in one embodiment of the present invention. In the figure, 1 is a metal foil, 2 is a metal aluminum layer, 3 is a semiconductor chip, 4 is a thin metal wire, and 6 is a molding resin.

以上のように構成された本実施例による半導体パッケー
ジについて以下、その製造方法を詳細に説明する。The manufacturing method of the semiconductor package according to this embodiment configured as described above will be described in detail below.

先づ、図に示すように本実施例では鉄−ニッケル合金か
ら成る厚さ約０．２χのフープ上の金属箔１を金型を用
いて連続的に打抜加工を行ない、所望の模様を有するメ
タルフレームを作成した。次に、このメタルフレームの
一部分に金属アルミニウム層２を部分的に形成するが、
この金属アルミニウム層２を形成するにあたっては、真
空蒸着技術を利用し、メタルフレームの必要部分にのみ
選択的に金属アルミニウム層２を析出させるために、ス
テンレススチールで作ったメタルマスク−＆使用し、こ
のメタルマスクとメタルフレームを重ね合わせて、真空
蒸着を行ない金属アルミニウム２を６ベーン に、鉄−ニッケル金属箔１の表面にいろいろな金属をメ
ッキし金属アルミニウムとの密着性を評価したが、その
結果、鉄−ニッケル金属箔上にニッケルメッキを薄く施
こし、その表面に部分的にアルばニウムを真空蒸着法に
よって析出させることにより、アルミニウム層２と金属
箔１との密着性が極めてよくなることがわかった。そし
てこのようにして作ったメタルフレームは半導体チップ
３を所定の位置にのせ、導電性ペーストなどを用いてメ
タルフレームと強固に固定する、いわゆるダイスボンド
処理を行ない、この半導体チップ３の外部接続端子と、
メタルフレームの接続を必要とする金属アルミニウム層
２とを金線やアルミニウム線などの金属細線４を用いて
、熱圧着法や超音・減法によって接続し、しかる後に半
導体チップ３を粉末状のエポキシ樹脂などから成るモー
ルド樹脂６を用いてトランスファーモールド法により封
７ペーノ 止し、半導体パッケージを作った。尚、この半導体パッ
ケージを作成するにあたって、本実施例では特に金属細
線９としてアルミニウム線を用い、ポールボンディング
法や超音波ボンディング法によってメタルフレームと接
続させたが、メタルフレームとの接続は極めて強固であ
り、良好な信頼性を得ることができた。First, as shown in the figure, in this example, a metal foil 1 made of an iron-nickel alloy on a hoop with a thickness of about 0.2χ is continuously punched using a die to form a desired pattern. Created a metal frame with. Next, a metal aluminum layer 2 is partially formed on a part of this metal frame.
In forming this metal aluminum layer 2, a metal mask made of stainless steel is used to selectively deposit the metal aluminum layer 2 only on the necessary parts of the metal frame using vacuum evaporation technology. This metal mask and metal frame were overlapped, and vacuum evaporation was performed to form six vanes of metal aluminum 2. Various metals were plated on the surface of iron-nickel metal foil 1 to evaluate the adhesion to metal aluminum. As a result, the adhesion between the aluminum layer 2 and the metal foil 1 becomes extremely good by applying a thin layer of nickel plating on the iron-nickel metal foil and depositing aluminum partially on the surface using a vacuum evaporation method. I understand. Then, the semiconductor chip 3 is placed in a predetermined position on the metal frame made in this way, and the semiconductor chip 3 is firmly fixed to the metal frame using a conductive paste or the like, which is a so-called die bonding process, and the external connection terminals of the semiconductor chip 3 are and,
The metal frame is connected to the metal aluminum layer 2 that requires connection using a thin metal wire 4 such as a gold wire or aluminum wire by thermocompression bonding or ultrasonic/subtraction method, and then the semiconductor chip 3 is bonded with powdered epoxy. A semiconductor package was fabricated by sealing 7 by a transfer molding method using a molding resin 6 made of resin or the like. In creating this semiconductor package, in this example, an aluminum wire was used as the thin metal wire 9, and it was connected to the metal frame by pole bonding or ultrasonic bonding, but the connection to the metal frame was extremely strong. We were able to obtain good reliability.

発明の効果 以上の説明から明らかなように本発明による半導体パッ
ケージはメタルフレーム上に金属アルミニウム層を選択
的に形成し、このアルミニウム層と半導体チップとをワ
イヤーボンド法によって接続したものであるので、従来
例のように金などの貴金属層を設ける必要がないので、
コストが安価につくことや、特にアルミニウム線を使用
してワイヤーポンドを行なう場合には、そのボンディン
グ強度がすぐれ、接続の信頼性にすぐれた半導体パッケ
ージが得られるなどの効果がある。Effects of the Invention As is clear from the above explanation, the semiconductor package according to the present invention has a metal aluminum layer selectively formed on a metal frame, and this aluminum layer and a semiconductor chip are connected by wire bonding. There is no need to provide a noble metal layer such as gold as in conventional examples, so
It has advantages such as being inexpensive, and especially when wire bonding is performed using aluminum wire, it has excellent bonding strength and a semiconductor package with excellent connection reliability can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の一実施例における半導体パッケージの断面
図である。 １・・・・・・金属箔、２・・・・・・金属アルミニウ
ム層、３・・・・・・半導体チップ、４・・・・・・金
属細線、６・・・・・・モールド樹脂。The figure is a sectional view of a semiconductor package in one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1...Metal foil, 2...Metal aluminum layer, 3...Semiconductor chip, 4...Metal thin wire, 6...Mold resin .

Claims (3)

【特許請求の範囲】[Claims] （１）金属箔を加工して作ったメタルフレームの一部分
に金属アルミニウム層を選択的に設け、上記メタルフレ
ーム上に半導体チップを固定して、その外部接続端子と
、金属アルミニウム層とを金属細線で接続したことを特
徴とする半導体パッケージ。(1) A metal aluminum layer is selectively provided on a part of a metal frame made by processing metal foil, a semiconductor chip is fixed on the metal frame, and its external connection terminals and the metal aluminum layer are connected with thin metal wires. A semiconductor package characterized by being connected by. （２）金属アルミニウム層がニッケル層を介して金属箔
上に部分的に形成されたメタルフレームを使用したこと
を特徴とする特許請求の範囲第１項記載の半導体パッケ
ージ。(2) The semiconductor package according to claim 1, characterized in that a metal frame is used in which a metal aluminum layer is partially formed on a metal foil with a nickel layer interposed therebetween. （３）金属箔を加工することにより所望の形状を有する
メタルフレームを作り、上記メタルフレームの一部分に
真空蒸着法によって金属アルミニウムを選択的に形成す
るとともに、上記メタルフレームに半導体チップを固定
してその外部接続端子とアルミニウム層とをワイヤーボ
ンド法により接続したことを特徴とする半導体パッケー
ジの製造方法。(3) A metal frame having a desired shape is made by processing metal foil, metal aluminum is selectively formed on a portion of the metal frame by vacuum evaporation, and a semiconductor chip is fixed to the metal frame. A method for manufacturing a semiconductor package, characterized in that the external connection terminal and the aluminum layer are connected by a wire bonding method.
JP59245236A 1984-11-20 1984-11-20 Semiconductor package and manufacture thereof Pending JPS61124159A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59245236A JPS61124159A (en) 1984-11-20 1984-11-20 Semiconductor package and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245236A JPS61124159A (en) 1984-11-20 1984-11-20 Semiconductor package and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS61124159A true JPS61124159A (en) 1986-06-11

Family

ID=17130679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245236A Pending JPS61124159A (en) 1984-11-20 1984-11-20 Semiconductor package and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS61124159A (en)

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