JPS61117920A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61117920A
JPS61117920A JP59238900A JP23890084A JPS61117920A JP S61117920 A JPS61117920 A JP S61117920A JP 59238900 A JP59238900 A JP 59238900A JP 23890084 A JP23890084 A JP 23890084A JP S61117920 A JPS61117920 A JP S61117920A
Authority
JP
Japan
Prior art keywords
transistor
voltage
base
current
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59238900A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0374973B2 (enExample
Inventor
Toshio Shigekane
重兼　寿夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP59238900A priority Critical patent/JPS61117920A/ja
Priority to US06/785,878 priority patent/US4651035A/en
Priority to EP85308189A priority patent/EP0182571A3/en
Publication of JPS61117920A publication Critical patent/JPS61117920A/ja
Publication of JPH0374973B2 publication Critical patent/JPH0374973B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
JP59238900A 1984-11-13 1984-11-13 半導体装置 Granted JPS61117920A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59238900A JPS61117920A (ja) 1984-11-13 1984-11-13 半導体装置
US06/785,878 US4651035A (en) 1984-11-13 1985-10-09 Compound diverse transistor switching circuit
EP85308189A EP0182571A3 (en) 1984-11-13 1985-11-11 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238900A JPS61117920A (ja) 1984-11-13 1984-11-13 半導体装置

Publications (2)

Publication Number Publication Date
JPS61117920A true JPS61117920A (ja) 1986-06-05
JPH0374973B2 JPH0374973B2 (enExample) 1991-11-28

Family

ID=17036938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238900A Granted JPS61117920A (ja) 1984-11-13 1984-11-13 半導体装置

Country Status (1)

Country Link
JP (1) JPS61117920A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348855B2 (en) * 2006-03-30 2008-03-25 Texas Instruments Incorporated Bias circuitry for cascode transistor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7348855B2 (en) * 2006-03-30 2008-03-25 Texas Instruments Incorporated Bias circuitry for cascode transistor circuit

Also Published As

Publication number Publication date
JPH0374973B2 (enExample) 1991-11-28

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