JPS61110567A - Ion flow controlling electrode - Google Patents

Abstract

PURPOSE:To obviate generation of flashes at upper and lower electrodes and prevent control characteristics from being degraded, by setting the diameter of an opening part of at least one of upper and lower electrodes to be larger than the diameter of an opening part for passing an ion flow which is provided in an insulating substrate. CONSTITUTION:The upper and lower electrodes 1, 3 are previously provided with the opening parts 4A, 4C accurately by etching or the like. Thereafter, the insulating substrate 2 is provided with an opening part 4B by drilling, laser machining or the like. By this, no flash is generated at the electrodes 1, 3. When misregister occurs between the position of the opening parts 4A(4C) of the electrodes 1, 3 and the position of the opening parts 4B of the substrate 2, the ion flow passes with the center line connecting the centers of the opening parts of the electrodes 1, 3 as a substantial center of he flow. Accordingly, when the opening parts 4A(4C) are set to be larger than the opening parts 4B and positional accuracy of the opening parts 4A(4C) is set to be high, the opening parts 4B may be formed with a low positional accuracy. Accordingly, control characteristics can be prevented from being degraded.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ion flow control electrode in an electrostatic recording device using ion flow writing, which is a hard copy device.

[Conventional technology]

6 to 8 show the configuration P1 of the conventional sleeve ion flow control electrode, and FIG. 9 shows an example of its use.

FIG. 6 is a plan view of the ion flow control electrode shown in FIG. 9, seen from the corona generation wire side, FIG. 7 is a plan view of the ion flow control electrode shown in FIG. '-A'1liK
represents a cross-sectional view.

In these four figures, 1 is the upper electrode, 2 is the insulator substrate,
3 is a lower electrode, 4 is an opening for ion flow passage, and these constitute an ion flow control electrode 5. 6 is a dielectric recording medium, and T is a conductive substrate.

8 is a corotron shield case, 9 is a wire for corona generation, 10 is an ion flow control pulse, and 11.12 is a power source.

[Problem that the invention seeks to solve]

First, a method of recording an electrostatic latent image using an ion stream will be explained with reference to FIG.

As shown in FIG.
Corner ion photogenerating wire 9 by applying from 1
The ions generated from the corner ion photogenerating wire 9 and the electrically conductive substrate T facing each other pass through the hole formed in the ion flow control electrode 5, but the passage t is only one hole. It is controlled by the electric field formed by the lower electrode 1 and the lower electrode 3. That is, if the electric field formed by the upper S electrode 1 and the lower electrode 3 is set in the same direction as the electric field formed by the corona ion generating wire 9 and the 4iIt substrate T, ions pass through the opening 4 (1, dielectric An electrostatic latent image is formed on the recording medium 6.If the electric fields formed by the lower electrode 1 and the lower electrode 3 are reversed, the ions will not be collected by the upper electrode Bcg and no electrostatic latent image will be formed.Control of the electric field. is performed by the power supply 12 and the ion flow control pulse 10.

As shown in Figures 6 to 9, this is the conventional ion flow control! The 1111kL electrode 5 has a structure in which the upper and lower electrodes 1.3 and the insulator substrate 2 are provided with through holes of the same diameter to form an opening 4 through which ion flow is passed. In addition, there is a drawback that if there is a deviation in the hole position during the manufacturing of the aperture 4, that is, if the pitch dimension is 1L, this will directly cause misalignment of dots during recording.

K when forming this opening 4 by drilling or the like.

Particles tend to occur from the upper and lower electrodes 1 and 3, which causes a problem in that the electric field is disturbed and the control characteristics are significantly deteriorated.

This invention was made in order to solve the above-mentioned problems, and is an ion flow control electrode in which positional deviation of the aperture during manufacturing does not result in positional deviation of recording, and control characteristics are not deteriorated due to paris in the aperture. The purpose is to provide

[Means for solving problems]

The ion flow control electrode according to the present invention has a diameter of the openings for passing ion flows provided in the upper and lower electrodes that are smaller than the diameter of the openings for passing the ions provided in the insulating substrate. It was formed in a large size.

[Effect]

The ion flow passes through the opening 1 or is blocked from passing depending on the direction and magnitude of the electric field formed between the upper electrode and the lower fllllX&, and necessary recording is performed on the vj body recording medium.

〔Example〕

Figures 1 to 3 show one embodiment of this invention f3'J, where Figure m1 is a front view, Figure 2 is a back view, and Figure 3 is a
It is a sectional view taken along the line AA in the figure.

In these figures, 1 to 3 are the same as those shown in Figures 61 to 9, and 4A and 4C are the upper and lower parts [&1, 31
4B is an opening provided in the dielectric substrate 2. Note that when each opening 48 to 4C)k is collectively referred to, 4 is simply used.

This is a structural trap, so the example is the upper part.

Regarding the lower electrode m1.3, the openings 4A and 4CY are formed in advance by a method such as etching.
According to the process IK in which the opening 4B is then formed in the insulating substrate 2 by drilling or isopressure laser processing, the possibility of generation of paris from the upper and lower sides 1 and 3 can be eliminated.

In FIG. 4, the opening 4B of the insulator substrate 2 is at the top.

Place the ion flow control electrode 5 formed offset from the center of the lower R1111Km1.3 on the corona ion generation wire side.
The half-view of FIG. 5 is a cross-sectional view when the ion flow passes through the ion flow control electrode 5 of FIG. 4.

As shown in Fig. 4, the openings 4A (
4C) and the opening 4B of the insulator substrate 2 are misaligned, the ion flow will be caused by the opening 4A (4C) of the upper and lower electrodes 1°3.
) passes through as a flow approximately centered on the center. This is sufficiently true if the dielectric constant of the insulating substrate 2 is not extremely large and the dielectric constant is 5 or less. Therefore, by setting the control conditions appropriately, the opening 4 of the ion flow control electrode 5 is
The flux diameter of the ion flow flowing into the opening 4 of the insulator substrate 2
If it is made smaller than the diameter of B, as shown in Figures 4 and 5
, 4C, even if the center of the opening 4B of the insulating substrate 2 deviates from the center of the opening 4C, the passing position of the ion flow will be affected.
＜It becomes.

Next, a method of manufacturing the ion flow control electrode 5 will be explained.

(11 upper ft11. lower MiKm1. 3ONnf) l
If the positional accuracy of 14A and 4C is kept high, there is an advantage that the fi1 accuracy of the opening 4B of the insulating substrate 2 may be low.

In this case, the openings 4A and 4C of the upper and lower electrodes 1.3 can be formed with ease by etching or the like using a mask, thereby increasing the precision. Drilling is a typical method for making holes in the opening 4B of the insulator substrate 2, but it is difficult to obtain high positional accuracy.
(11) In the above embodiment, the upper and lower parts 11.3 are open [1].
The diameters of portions 4A and 4C are both the same as opening 4B of insulator substrate 2.
It is larger than the diameter of and manufactured with high precision.

However, even if only the diameter of the openings 4A and 4C of either the upper or lower electrode 1°3 is made larger than the diameter of the opening 4B of the insulator substrate 2, the above explanation will still apply. I'm jealous of the fact that it has an effect similar to that of . Specifically, the manufacturing method is the upper part.

Open LJ of insulator substrate 2 on either side of lower S magnetic pole 1.3
Precisely form a hole larger than part 4B by etching, etc., leave no hole on the wL pole surface on the opposite side, and then use a drill etc. to drill the hole on the opposite side to the side where the hole has already been formed. 1
If a through-hole is drilled from the other side of the electrode, the surface on the entry side of the drill will originally have burrs, so it is possible to obtain an electrode 5 with no burrs as a whole.

In addition, regarding the passage position of the ion flow, the position of the opening of the electrode with the larger hole diameter can be achieved with high precision by etching, etc., and then the electrode and insulator substrate 20 on the other side
The positional deviation of the passing ion flow due to the positional deviation K of the through hole is largely eliminated.

Note that in the above embodiment, the opening 4 of the ion flow control electrode 5
Although the case where the openings 4 are arranged in a straight line has been described, it can be implemented in the same way even when the openings 4 are arranged in a plane.
One side has individual control (individual electrodes), and the other side has common control (
However, in other configurations, the apertures 4 are arranged in a plane, and the common electrode is used for 2 to 16 apertures 4 on both the upper and lower surfaces. It is also possible to implement a configuration in which the upper and lower parts are controlled using a 1-pole 1.3-volt matrix method. Also, the first
In FIGS. 3 to 3, it is also possible to implement a structure in which the upper and lower surfaces of the io7, fltL, tll, etc. 5 are replaced.

Furthermore, the change in ion flow control characteristics due to the exposure of an insulator region with a certain ring around the opening 4B of the insulator substrate 2 on the upper and lower surfaces is due to the diameter of the opening 4B of the insulator substrate 2. If the ratio between the diameter of the openings #4A and 4C of the upper and lower electrodes 1 and 3 is about 1:3 or less, there is no problem in practical use.

〔Effect of the invention〕

As described above, the present invention is applied to the ion flow control electrode which is located above the diameter of the opening of the insulator substrate.

Lower part 1 [At least one other opening has a larger diameter (1,
Therefore, it is possible to produce a Paris conduit from the upper s5 lower 1JL pole. Even if the positional accuracy of the opening of the electrode and the other electrode is low,
This has the advantage that the dot position deviation during recording can be reduced.

[Brief explanation of drawings]

FIG. 1 is a plan view of an embodiment of the ion flow control electrode of the present invention, FIG. 2 is a back view, and FIG.
- A sectional view taken along line A, Fig. 4 is a plan view for explaining the operation, Fig. 8 is a sectional view taken along A'-8'mK of FIG. 6, and FIG. 9 is a recording yA diagram using a conventional ion flow control electrode. In the figure, 1 is a lower electrode, 2 is an insulator substrate, 3 is a lower electrode,
4A to 4C are openings, and 5 is an ion flow control electrode. Figure 4 Figure 6 Figure 7 Figure 8 J4. lj,j

Claims (1)

[Claims] An upper electrode and a lower electrode are respectively provided on the upper and lower surfaces of an insulating substrate in which a large number of openings are formed, with the respective openings overlapping the openings of the insulating substrate, and a potential to be applied to the upper electrode and the lower electrode is set. In the ion flow control electrode that forms an electrostatic latent image by controlling the ion flow, at least the opening of the upper electrode or the lower electrode is larger than the opening of the insulator substrate for ion flow passage. An ion flow control electrode characterized in that one side has a large diameter.