JPS61107749A - Semiconductor device - Google Patents

Abstract

PURPOSE:To form a protective film having few defects by shaping an insulating film through an application method onto a metallic wiring and forming two layers or more of insulating films shaped through methods except application onto the insulating film. CONSTITUTION:A diffusion layer 2 is formed to one part of a semiconductor substrate 1. An insulating film 3 is shaped onto the semiconductor substrate 1 with the exception of the upper section of the diffusion layer 2. A metallic wiring 4 is formed onto the diffusion layer 2 and the insulating film 3. An inorganic or organic insulating film 8 is shaped onto the metallic wiring 4 through application of coating. Insulating films 9, 10, such as oxide films, nitride films or the like consisting of a metal or a semiconductor are formed onto the insulating film 8 through methods except application of coating.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical field to which the invention pertains The present invention relates to semiconductor devices, particularly to passivation films that significantly reduce defects in passivation films and realize semiconductor devices with high reliability. It is related to the structure of

(2) Conventional technology Due to the miniaturization and high integration of semiconductor integrated circuits) semiconductor surfaces are becoming more complex, and the influence of minute defects in the bacsipation film on device reliability is becoming more pronounced9. It's coming. FIG. 1 shows an example of a cross-sectional view of a semiconductor device having a surface protection film that has been widely used in the past. In the figure, 1 is a semiconductor substrate, 2 is a diffusion layer, 3 is an insulating film, 4 is a metal wiring layer, 5.6 is a surface protection film, and 7 is a defect occurring in the protection film. In semiconductor devices, defects occur in the protective film due to internal stress due to the difference in thermal expansion coefficient between the surface protective film and the underlying layer, mechanical stress applied from the outside, the presence of dust during the growth of the protective film, etc. Sexual problems were sometimes induced. Therefore, conventionally, in order to reduce the defect density of the protective film, various types of protective films have been investigated and a protective film with a two-layer structure has been used. It is very difficult to reduce the number of defects, and even after the protective film is formed, defects occur intensively at the step due to the concentration of external stress on the surface step and the decrease in the thickness of the protective film at the step. The matter could not be avoided.

(3) Purpose of the Invention The purpose of the present invention is to provide a highly reliable semiconductor device that prevents the above-mentioned defects from occurring in the protective film.

(4) Structure of the Invention The present invention is characterized by a semiconductor device having an insulating film consisting of three or more layers as a protective film after final metal wiring is formed, and the lower insulating film is formed by a coating method. .

(5) Description of Embodiment FIG. 2 shows a cross-sectional structure of a semiconductor device according to an embodiment of the present invention. In the figure, 1 is a semiconductor substrate, 2 is a diffusion layer, 3 is an insulating film, 4 is a metal wiring layer, 8 is an inorganic film formed by coating, and 9 is an organic insulating film. 10 is a metal or semiconductor oxide film or nitride film. Insulating films such as films formed by methods other than coating methods such as sputtering, vapor deposition, and vapor deposition, and 7 are defects that occur in the protective film. 8 in the figure is an insulating film formed for the purpose of flattening the surface after forming the metal wiring 4), and after forming the absolute # film 8, more dense protective films 9 and 10 are formed. As a result, it is possible to prevent the occurrence of defects at the stepped portions caused by the conventional structure, and to obtain a protective film with extremely few defects.

(6) Effects of the invention By flattening the plane and then adding two or more dense protective films on top of it, a protective film with extremely few defects can be formed, resulting in a highly reliable semiconductor device. can be realized.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device having a surface protection film that has been commonly used in the past. In the figure, 1 is a semiconductor substrate, 2
3 is a diffusion layer, 3 is an insulating film, 4 is a metal wiring layer, 5.6 is a surface protective film, and 7 is a defect occurring in the protective film.

Claims (1)

[Claims] A semiconductor device characterized in that an insulating film is provided on a metal wiring by a coating method, and two or more layers of insulating films formed by a method other than the coating method are provided on the insulating film.