JPS6110667Y2 - - Google Patents

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Publication number
JPS6110667Y2
JPS6110667Y2 JP19741681U JP19741681U JPS6110667Y2 JP S6110667 Y2 JPS6110667 Y2 JP S6110667Y2 JP 19741681 U JP19741681 U JP 19741681U JP 19741681 U JP19741681 U JP 19741681U JP S6110667 Y2 JPS6110667 Y2 JP S6110667Y2
Authority
JP
Japan
Prior art keywords
shaft
attached
machine
cylinder shaft
pair
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP19741681U
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898917U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19741681U priority Critical patent/JPS5898917U/ja
Publication of JPS5898917U publication Critical patent/JPS5898917U/ja
Application granted granted Critical
Publication of JPS6110667Y2 publication Critical patent/JPS6110667Y2/ja
Granted legal-status Critical Current

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  • Massaging Devices (AREA)
  • Orthopedics, Nursing, And Contraception (AREA)
JP19741681U 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置 Granted JPS5898917U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19741681U JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19741681U JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Publications (2)

Publication Number Publication Date
JPS5898917U JPS5898917U (ja) 1983-07-05
JPS6110667Y2 true JPS6110667Y2 (en, 2012) 1986-04-05

Family

ID=30110639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19741681U Granted JPS5898917U (ja) 1981-12-26 1981-12-26 椅子式マツサ−ジ機に付設した腕引伸ばし装置

Country Status (1)

Country Link
JP (1) JPS5898917U (en, 2012)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
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US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド マテリアルズ インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
WO2004113585A2 (en) 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7312128B2 (en) 2004-12-01 2007-12-25 Applied Materials, Inc. Selective epitaxy process with alternating gas supply
US7560352B2 (en) 2004-12-01 2009-07-14 Applied Materials, Inc. Selective deposition
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US20070119370A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition

Also Published As

Publication number Publication date
JPS5898917U (ja) 1983-07-05

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