JPS61105852A - Wire bonder - Google Patents

Wire bonder

Info

Publication number
JPS61105852A
JPS61105852A JP60172342A JP17234285A JPS61105852A JP S61105852 A JPS61105852 A JP S61105852A JP 60172342 A JP60172342 A JP 60172342A JP 17234285 A JP17234285 A JP 17234285A JP S61105852 A JPS61105852 A JP S61105852A
Authority
JP
Japan
Prior art keywords
wire bonding
bonding
wedge
wire
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60172342A
Other languages
Japanese (ja)
Other versions
JPH0131297B2 (en
Inventor
Kazuhisa Takashima
高島 一壽
Tokio Iguchi
井口 時男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP60172342A priority Critical patent/JPS61105852A/en
Publication of JPS61105852A publication Critical patent/JPS61105852A/en
Publication of JPH0131297B2 publication Critical patent/JPH0131297B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313Wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78343Means for applying energy, e.g. heating means by means of pressure by ultrasonic vibrations
    • H01L2224/78344Eccentric cams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01073Tantalum [Ta]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enable to perform a high-speed bonding by a method wherein a wire bonding operation is started based on the signal indicating that the terminal to be used for wire bonding comes in contact with the surface where the wire bonding is performed. CONSTITUTION:When the length of wire bonding surface varies in the amount of height of H1, H2 or H3 for the reference surface L1 when a wedge 1 comes down by the action of a motor circuit 17, the wedge 1 comes in contact with the surface of wire bonding at points t1, t2 and t3. At that time, a detection signal is outputted to a timer 15 from a detector 12, and an ultrasonic wave vibrator 4 is started oscillation after the lapse of time Ta necessary to attenuate the vibration of the wedge 1 by the timer 15, and an ultrasonic wave bonding is started. A signal is outputted to the timer 16 from the vibrator 4 at the same time when the wire bonding is finished, a motor 11 is inversely rotated at a high speed, and the wedge is moved upward and returned to its original position through the intermediate of a cam 9. Accordingly, a bonding work can be performed at a high speed without having a waiting time even when irregularity in size is generated on a semiconductor device.

Description

【発明の詳細な説明】 本発明は半導体装置のワイヤボンダに関し、特に半導体
装置のワイヤボンディング部における寸法のばらつきに
応じてボンディング作用を制御1〜、ボンディング速度
の高速化を図るようにしたワイヤボンダに関するもので
ある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonder for semiconductor devices, and more particularly to a wire bonder that controls the bonding action according to dimensional variations in the wire bonding portion of the semiconductor device and increases the bonding speed. It is.

半導体装置におけるワイヤボンディング方式には種々の
ものがあるが、例えば超音波ワイヤボンディング方式は
、超音波エネルギにより被ボンデイング体にボンディン
グワイヤを加圧振動させながら相互の新鮮面を露出させ
て塑性変形による固相接合を行なうものである。そして
、この種のワイヤボンディングを行なうワイヤボンダと
しては、第1図に示すように、超音波振動子を接続した
ホーン3の先端にボンディング用端子であるウェッジ1
を取着し、駆動モータ11によって回動するカム9によ
りホーン3を上下に揺動することによりウェッジ1を下
動してワイヤボンディング面に接触させ或いは上方へ離
すような構成が提案される。8はウェッジ1を前後左右
に移動させるXYテーブル、2はウェッジ1先端に導か
れたボンディングワイヤであるアルミニウム線、20は
支持台30上に支持された被ボンデイング体(半導体装
置)である。
There are various wire bonding methods for semiconductor devices. For example, the ultrasonic wire bonding method uses ultrasonic energy to vibrate the bonding wire against the bonded object while exposing the fresh surfaces of each other, resulting in plastic deformation. It performs solid phase bonding. As shown in FIG. 1, a wire bonder that performs this type of wire bonding has a wedge 1, which is a bonding terminal, at the tip of a horn 3 connected to an ultrasonic transducer.
A configuration is proposed in which the wedge 1 is moved downward into contact with the wire bonding surface or separated upward by swinging the horn 3 up and down by a cam 9 rotated by a drive motor 11. 8 is an XY table for moving the wedge 1 back and forth, left and right; 2 is an aluminum wire that is a bonding wire guided to the tip of the wedge 1; and 20 is an object to be bonded (semiconductor device) supported on a support base 30.

従って、この種の装置を用いたワイヤボンディング法は
、カム9の形状或はカムの回転速度を制御してウェッジ
1が第2図に実線で示すような上下作動プロフィルとな
るように設計しておき、ウェッジ1を上死点位置から最
初は急速に、次いでゆっくりと下動l−てワイヤボンデ
ィング面に接触させる一方、予め定めた時間に達したと
きに超音波振動子を作動l−て超音波ワイヤボンディン
グを行ない、完了後に残存振動の低減を持ってウェッジ
1を急速に上動復帰させるようなプログラムにて行4「
わわる。尚、このボンディングはペレット側とリード側
とで交互に行なわれる。また、ウェッジをゆっくりと下
動するのは、ワイヤボンディング面にウェッジが衝撃を
もって接触することによって生じるワイヤ接合性の悪化
、ウェッジやワイヤボンディング面の破損を防ぐためで
ある。
Therefore, the wire bonding method using this type of device is designed so that the shape of the cam 9 or the rotational speed of the cam is controlled so that the wedge 1 has a vertical movement profile as shown by the solid line in FIG. The wedge 1 is first rapidly and then slowly lowered from the top dead center position to bring it into contact with the wire bonding surface, while at the same time, when a predetermined time has elapsed, the ultrasonic transducer is activated to Perform sonic wire bonding, and after completion of the sonic wire bonding, run 4 with a program that quickly returns wedge 1 to upward motion with reduced residual vibration.
Wow. Note that this bonding is performed alternately on the pellet side and the lead side. Further, the reason why the wedge is moved slowly downward is to prevent deterioration of wire bondability and damage to the wedge and the wire bonding surface caused by the wedge contacting the wire bonding surface with impact.

この様にウェッジの下降動作を高速化される技術につ(
・ては、特開昭55−]/11736号公報に7[\さ
)9て(・る。
Regarding the technology that speeds up the downward movement of the wedge in this way (
・It is 7[\sa)9te(・ru) in Japanese Patent Application Laid-Open No. 55-11736.

(2かしながら、通常の半導体装置においては、例tば
第3図にセラミックパッケージの例を示すように、ペレ
ット21を固着材22にて固着したセラミックパッケー
ジ本体23の部品精度のばらつきや、このセラミックパ
ッケージ本体23に低融点ガラス24にて取付けたリー
ド25の部品精度のばらつき、更にはこの低融点ガラス
24へのリード25の埋込み深さのばらつきが大きく、
このためワイヤボンディング面であるペレット21の上
面高さHaやリード25の上面高さHb(いずれもセラ
ミックパッケージ本体23の下面を基準)にばらつきが
生じている。
(2) However, in a normal semiconductor device, for example, as shown in the example of a ceramic package shown in FIG. There are large variations in the component accuracy of the leads 25 attached to the ceramic package body 23 using the low melting point glass 24, and furthermore, there are large variations in the depth of embedding the leads 25 into the low melting point glass 24.
For this reason, variations occur in the top surface height Ha of the pellet 21, which is the wire bonding surface, and the top surface height Hb of the leads 25 (both with respect to the bottom surface of the ceramic package body 23).

このため、ワイヤボンディング面が基準高さよりも高い
側にばらついてΔHa、△Hbいると、ウェッジは第2
図に仮想線で示すように基準の接触時点t。よりも幾分
前の時点tyにおいてワイヤボンディング面に接触する
ことになる。従って、ウェッジは超音波が発生するまで
の間はワイヤボンディング面に静止状態で接触1〜、超
音波振動によるボンディングが完了された後に従来と同
様に上動復帰されることになる。この結果、ウェッジが
ワイヤボンディング面に接触してから超音波ワイヤボン
ディングが始動されるまでの間、即ち待ち時間txが必
要以上に長くなり、ワイヤボンディング作用時間が長く
なる原因の一つとなっている。
Therefore, if the wire bonding surface varies higher than the reference height and there are ΔHa and ΔHb, the wedge
The reference contact time t is shown in phantom in the figure. The wire bonding surface will be contacted at a time ty some time earlier than ty. Therefore, the wedge remains in static contact with the wire bonding surface until ultrasonic waves are generated, and after the bonding by ultrasonic vibration is completed, it is returned to the upward movement as in the conventional method. As a result, the waiting time tx, from when the wedge comes into contact with the wire bonding surface until the ultrasonic wire bonding is started, becomes longer than necessary, which is one of the reasons why the wire bonding operation time becomes longer. .

lまたがって、本発明の目的は半導体装置の寸法上のば
らつきに応じてワイヤボンディング作用のプログラムを
変化させ、これにより無駄な時間を省いてボンディング
を高速化することができるワイヤボンディング法及びワ
イヤボンダを提供することにある。
Another object of the present invention is to provide a wire bonding method and a wire bonder that can change the wire bonding program according to the dimensional variations of semiconductor devices, thereby eliminating wasted time and speeding up bonding. It is about providing.

との目的を達成するために本発明方法は、ボンディング
用端子がワイヤボンディング面に到達して接触l〜たこ
とを検出L、この接触時を基準と1−て所定の時間経過
後に直ちにボンディング作用を行なわせるように1また
ことを特徴とするものである。また、本発明装置はボン
ディング用端子がワイヤボンディング面に接触したこと
を検出する検出器と、この検出器からの信号に基づいて
所定時間後にワイヤボンディング作用を始動させ得る制
御回路とを備えることを特徴とするものである。
In order to achieve the above object, the method of the present invention detects when the bonding terminal reaches the wire bonding surface and makes contact, and immediately performs the bonding action after a predetermined time has elapsed based on the time of this contact. It is characterized by one feature that allows the user to perform the following steps. The device of the present invention also includes a detector for detecting that the bonding terminal has contacted the wire bonding surface, and a control circuit that can start the wire bonding action after a predetermined time based on a signal from the detector. This is a characteristic feature.

以下、本発明を超音波ワイヤボンディング方式を例にと
って説明する。
The present invention will be explained below using an ultrasonic wire bonding method as an example.

先ず、本実施例の超音波ワイヤボンダを説明し、次にそ
の作用と共にワイヤボンディング方法を説明する。
First, the ultrasonic wire bonder of this embodiment will be explained, and then its operation and wire bonding method will be explained.

第4図は本実施例の超音波ワイヤボンダの全体構成図で
あり、図において、1はボンディング用端子であるウェ
ッジで、ボンディングワイヤであるアルミニウム線2が
ウェッジ1先端に導かれている。3は超音波振動子4が
接続されているホーンであり、一体に形成したホーン支
持具5と共に基台6に枢支され、その枢支点7を中心と
1〜で上下に揺動できるようになっている。8はこの基
台6を介してウェッジを前後左右に水平移動させろXY
テーブルであり、図外の制御機構によりウェッジ1をペ
レットやリード上のワイヤボンディング面に順次対向位
置させるようになっている。9は前記ホーン支持具5の
一端に摺接しているカムテアリ、ベルト手段10を介し
て駆動モータ1】により回転され、その回転速度変化に
従ってホーン支持具5及びホーン3を上下に揺動させ、
ウェッジ]&上下動させる。尚、カム9はそのカム線図
が線型のものを使用し、駆動モータ11は速度調整及び
正逆転が可能なものを用いている。また、20は被ボン
デイング体である半導体装置、30はこれを支持する支
持台である。
FIG. 4 is an overall configuration diagram of the ultrasonic wire bonder of this embodiment. In the figure, 1 is a wedge that is a bonding terminal, and an aluminum wire 2 that is a bonding wire is guided to the tip of the wedge 1. Reference numeral 3 designates a horn to which an ultrasonic vibrator 4 is connected, which is pivotally supported on a base 6 together with an integrally formed horn support 5, so that it can swing up and down at points 1 to 1 about its pivot point 7. It has become. 8 is to horizontally move the wedge back and forth and left and right via this base 6.XY
It is a table, and the wedges 1 are successively positioned facing the wire bonding surfaces on the pellets and leads by a control mechanism (not shown). 9 is rotated by a drive motor 1 through a cam tarry and a belt means 10 which are in sliding contact with one end of the horn support 5, and swing the horn support 5 and the horn 3 up and down according to changes in the rotational speed thereof;
Wedge] & move up and down. The cam 9 has a linear cam diagram, and the drive motor 11 is capable of speed adjustment and forward and reverse rotation. Further, 20 is a semiconductor device to be bonded, and 30 is a support stand for supporting this.

12はウェッジ1がワイヤボンディング面に接触1.た
ことを検出する検出器で、前記ホーン支持具5と電気的
に絶縁されたレバー13に電気接続されており、ウェッ
ジ1が下降してワイヤボンディング面に接触した際、レ
バー13がアースされたカム9から離れ、レバー13’
li圧が上がることにより、ウェッジ1がワイヤボンデ
ィング面に接触したことを検出するようになっている。
12 indicates that the wedge 1 is in contact with the wire bonding surface 1. The detector is electrically connected to a lever 13 electrically insulated from the horn support 5, and when the wedge 1 descends and contacts the wire bonding surface, the lever 13 is grounded. Move away from cam 9 and move lever 13'
By increasing the li pressure, it is detected that the wedge 1 has come into contact with the wire bonding surface.

また、14は前記検出器12からの接触検出信号に基す
いて超音波振動子4を発振させ、逆に超音波振動子4の
発振終了に基すいて駆動モータ11を逆転させる制御回
路である。即ち、この制御回路14は、検出器12から
の信号を受けた2きに予め設定した時間をおいて始動信
号を超音波振動子4に送出するタイマ15と、超音波振
動子4が内蔵カウンタの作用により所定時間発振した直
後にこの超音波振動子4から逆送される信号を受けて極
短時間後にモータ回路17に信号を出力するタイマ16
とを有している。モータ回路17はタイマ16からの信
号が入力されたときに、ウェッジ】が路上死点位置に迄
復動されるように駆動モータ】1を逆転させる機能を有
している。尚、駆動モータ11やカム9には回転角度を
検出するエンコーダや回転速度を検出するタコジェネレ
ータ(いずれも図示せず)を設けており、これらと前記
モータ回路17との協働によってウェッジ1の上下動プ
ロフィルを例えば第2図で説明した。1゛うな特性に設
定しているのである。
Further, 14 is a control circuit that causes the ultrasonic vibrator 4 to oscillate based on the contact detection signal from the detector 12, and conversely rotates the drive motor 11 in the reverse direction based on the end of oscillation of the ultrasonic vibrator 4. . That is, this control circuit 14 includes a timer 15 that sends a starting signal to the ultrasonic transducer 4 at a preset time every time it receives a signal from the detector 12, and a counter that the ultrasonic transducer 4 has built-in. A timer 16 receives a signal sent back from the ultrasonic transducer 4 immediately after it oscillates for a predetermined period of time due to the action of
It has The motor circuit 17 has a function of reversing the drive motor 1 so that the wedge 1 is returned to the road dead center position when the signal from the timer 16 is input. The drive motor 11 and the cam 9 are provided with an encoder that detects the rotation angle and a tacho generator (both not shown) that detects the rotation speed, and these work together with the motor circuit 17 to control the rotation of the wedge 1. The vertical motion profile is illustrated in FIG. 2, for example. This is because the characteristics are set to 1.

次に上記構成のワイヤボンダの作用と共に本発明方法を
説明する。
Next, the method of the present invention will be explained together with the operation of the wire bonder having the above structure.

第5図に示すように、モータ回路17の作用によりウェ
ッジ】が初めは急速に、次にゆっくりと下動してきたと
きに、そのときのワイヤボンディング面の高さが基準面
L1に対して高さH,In、又はT4.たけ高くばらつ
いていれば、夫々点’I  + ’2 r 13におい
てウェッジがワイヤボンディング面に接触する。従って
このとき検出器12から検出信号がタイマ15に出力さ
れ、タイマ15はそのときから所定時間ta経過後直ち
に超音波振動子4を始動して発振させ、超音波ボンディ
ングを開始する。つまり、第5図から明らかなように、
ウェッジの接触が早ければ、それだけ超音波ボンディン
グが早く開始される。とれにより、第2図に示した従来
での待ち時間txを解消し、その分ボンディングを早め
ることができる。
As shown in FIG. 5, when the wedge moves downward rapidly and then slowly due to the action of the motor circuit 17, the height of the wire bonding surface at that time is higher than the reference surface L1. Sa H, In, or T4. If the variation is too high, the wedge will contact the wire bonding surface at each point 'I + '2 r 13. Therefore, at this time, a detection signal is output from the detector 12 to the timer 15, and the timer 15 immediately starts the ultrasonic vibrator 4 to oscillate after a predetermined time ta has elapsed from that time, and starts ultrasonic bonding. In other words, as is clear from Figure 5,
The sooner the wedges come into contact, the sooner ultrasonic bonding will begin. This eliminates the conventional waiting time tx shown in FIG. 2, making it possible to speed up bonding by that much.

尚、タイマ15に設定した時間t8は、ウェッジがワイ
ヤボンディング面に接触したときに生じる1辰動を減衰
させるのに必要とされる時間であり、直後のボンディン
グ作用に悪い影響を与えないために設けられる。
Note that the time t8 set in the timer 15 is the time required to attenuate the one-stroke movement that occurs when the wedge comes into contact with the wire bonding surface, and is set in order to avoid adversely affecting the bonding action immediately after. provided.

ソ12て、ワイヤボンディング作用が終了すると同時に
振動子4からタイマ16に信号が出力され、ウェッジの
残存振動が消滅するのに必要な極短時間tbを経過後、
タイマ16はモータ回路17に信号を出力し、モータ1
】を高速で逆回転させ、カム9を介してウェッジな上動
後締させるのである。ウェッジが復帰すればエンコーダ
とモータ回路17どの協働により再び前述のボンディン
グ工程を繰返すことになる。
At step 12, a signal is output from the vibrator 4 to the timer 16 at the same time as the wire bonding action ends, and after an extremely short time tb necessary for the residual vibration of the wedge to disappear,
The timer 16 outputs a signal to the motor circuit 17, and the motor 1
] is reversely rotated at high speed, and the wedge upper movement is later tightened via the cam 9. When the wedge is restored, the above-described bonding process is repeated again by the cooperation of the encoder and motor circuit 17.

従って、ワイヤボンディング面が高い方にず1ていれば
、基準面におけるボンディングの二「程時間よりも、第
5図に示すように夫々時間tcl l tC2+tc3
だけ短縮することがでべる。
Therefore, if the wire bonding surface is on the higher side, the time required for bonding on the reference surface is tcl l tC2 + tc3 as shown in FIG.
It can be shortened only.

ここで、ウェッジがワイヤボンディング面に接触すると
きの衝突振動がボンディング作用に影響を与えないとき
には、タイマ15における所定時間は極めて短かくでき
、場合によっては設定時間を0にすることも可能である
。これは、ボンディング作用終了時におけるタイマ16
においても同様である。
Here, if the collision vibration when the wedge contacts the wire bonding surface does not affect the bonding action, the predetermined time in the timer 15 can be made extremely short, and in some cases, the set time can be set to 0. . This is the timer 16 at the end of the bonding action.
The same applies to

また、前記実施例は超音波ボンディングを例示したが、
超音波振動作用を圧着作用に置き換えれば、ネイルヘン
ドボンデイングやウエッジボンテインク等の他の方式の
ボンディングにも応用することができる。
Furthermore, although the above embodiments have exemplified ultrasonic bonding,
If the ultrasonic vibration effect is replaced with a pressure bonding effect, it can be applied to other types of bonding such as nail hend bonding and wedge bonding.

以上のように本発明のワイヤボンディング方法によれば
、ボンティング用端子がワイヤボンディング面に接触し
たことを検出すると、所定時間経過後に直ちにボンディ
ング作用を行なうようにし、かつ本発明のワイヤボンダ
はこの作用を行ない得るように構成17たので、半導体
装置に寸法上のばらつきが生じていてもボンティング用
端子がワイヤポンディング面に接触稜は一定時間の内に
ボンディングが光子されることになり、従来の待ち時間
を解消12てその分ボンディングの高速化を図ることが
できる。また、ボンディング用端子の接触からボンティ
ング作用の開始までの時間が寸法のばらつきに拘らず一
定になるので、安定したボンディングができ、ボンディ
ングの信頼性を高めることができく)という効果もある
As described above, according to the wire bonding method of the present invention, when it is detected that the bonding terminal has contacted the wire bonding surface, the bonding action is immediately performed after a predetermined period of time has elapsed, and the wire bonder of the present invention has this action. Therefore, even if there are dimensional variations in the semiconductor device, the contact edge of the bonding terminal with the wire bonding surface will be photon bonded within a certain period of time, which is different from conventional methods. By eliminating the waiting time 12, the speed of bonding can be increased accordingly. Furthermore, since the time from the contact of the bonding terminal to the start of the bonding action is constant regardless of dimensional variations, stable bonding can be performed and bonding reliability can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は超音波ボンディング方式のワイヤボンダの模式
的な側面構成図、第2図はこのワイヤボンデインク方式
におけるウェッジの上下動プロフィルを示す図、第3図
は半導体装置における寸法のばらつきを説明する断面図
、第4図は本発明のワイヤボンダの一実施例を模式的に
示す全体構成図、第5図は本発明に係るワイヤボンダの
ウェッジの上下動プロフィルを示す図である。 l・・・ウェッジ、2・・・アルミニウム線、3・・・
ホーン、4・・・超音波発振子、8・・・XYテーブル
、9・・・カム、11・・・駆動モータ、12・・・検
出器、14・・・制御回路、15.16・・・タイマ、
17・・・モータ回路、20・・・半導体装置、21・
・・ペレット、23・・・セラミックパッケージ本体、
25・・・リート。
Fig. 1 is a schematic side view of a wire bonder using the ultrasonic bonding method, Fig. 2 is a diagram showing the vertical movement profile of the wedge in this wire bonding method, and Fig. 3 explains dimensional variations in semiconductor devices. A cross-sectional view, FIG. 4 is an overall configuration diagram schematically showing an embodiment of the wire bonder of the present invention, and FIG. 5 is a diagram showing the vertical movement profile of the wedge of the wire bonder according to the present invention. l... Wedge, 2... Aluminum wire, 3...
Horn, 4... Ultrasonic oscillator, 8... XY table, 9... Cam, 11... Drive motor, 12... Detector, 14... Control circuit, 15.16...・Timer,
17... Motor circuit, 20... Semiconductor device, 21.
... Pellet, 23 ... Ceramic package body,
25...leat.

Claims (1)

【特許請求の範囲】 1、ダイボンディングされたペレットと外部導電性リー
ドの各ワイヤボンディング面の間にわたって移動し、か
つ前記ワイヤボンディング面に接触してワイヤボンディ
ングを行なうワイヤボンディング用端子を有するワイヤ
ボンダにおいて、前記ワイヤボンディング用端子がワイ
ヤボンディング面に接触したことを検出する検出器と、
少なくともこの検出器からの信号に基づいて所定時間後
にワイヤボンディング作用を始動させる制御回路とを有
することを特徴とするワイヤボンダ。 2、ワイヤボンディング用端子がウェッジであり、ワイ
ヤボンディング作用は超音波振動子の発振に伴なう超音
波ボンディング作用である特許請求の範囲第1項記載の
ワイヤボンダ。
[Claims] 1. A wire bonder having a wire bonding terminal that moves between a die-bonded pellet and each wire bonding surface of an external conductive lead and contacts the wire bonding surface to perform wire bonding. , a detector that detects that the wire bonding terminal has contacted the wire bonding surface;
A wire bonder comprising: a control circuit that starts a wire bonding action after a predetermined time based on at least a signal from the detector. 2. The wire bonder according to claim 1, wherein the wire bonding terminal is a wedge, and the wire bonding action is an ultrasonic bonding action accompanying oscillation of an ultrasonic vibrator.
JP60172342A 1985-08-07 1985-08-07 Wire bonder Granted JPS61105852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60172342A JPS61105852A (en) 1985-08-07 1985-08-07 Wire bonder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60172342A JPS61105852A (en) 1985-08-07 1985-08-07 Wire bonder

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12683979A Division JPS5651832A (en) 1979-10-03 1979-10-03 Method and apparatus for wire bonding

Publications (2)

Publication Number Publication Date
JPS61105852A true JPS61105852A (en) 1986-05-23
JPH0131297B2 JPH0131297B2 (en) 1989-06-26

Family

ID=15940126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60172342A Granted JPS61105852A (en) 1985-08-07 1985-08-07 Wire bonder

Country Status (1)

Country Link
JP (1) JPS61105852A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206407A (en) * 2008-02-29 2009-09-10 Morioka Seiko Instruments Inc Wire bonding method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651832A (en) * 1979-10-03 1981-05-09 Hitachi Ltd Method and apparatus for wire bonding

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5651832A (en) * 1979-10-03 1981-05-09 Hitachi Ltd Method and apparatus for wire bonding

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206407A (en) * 2008-02-29 2009-09-10 Morioka Seiko Instruments Inc Wire bonding method

Also Published As

Publication number Publication date
JPH0131297B2 (en) 1989-06-26

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