JPS61104648A - 基板の冷却装置 - Google Patents
基板の冷却装置Info
- Publication number
- JPS61104648A JPS61104648A JP59225942A JP22594284A JPS61104648A JP S61104648 A JPS61104648 A JP S61104648A JP 59225942 A JP59225942 A JP 59225942A JP 22594284 A JP22594284 A JP 22594284A JP S61104648 A JPS61104648 A JP S61104648A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cushion member
- thin film
- metal
- cooling device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000000835 fiber Substances 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000000498 cooling water Substances 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- -1 etc. Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000004945 silicone rubber Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59225942A JPS61104648A (ja) | 1984-10-29 | 1984-10-29 | 基板の冷却装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59225942A JPS61104648A (ja) | 1984-10-29 | 1984-10-29 | 基板の冷却装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61104648A true JPS61104648A (ja) | 1986-05-22 |
| JPH0228248B2 JPH0228248B2 (enrdf_load_stackoverflow) | 1990-06-22 |
Family
ID=16837308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59225942A Granted JPS61104648A (ja) | 1984-10-29 | 1984-10-29 | 基板の冷却装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61104648A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6471050A (en) * | 1987-05-04 | 1989-03-16 | Varian Associates | Wafer holder |
| US5132873A (en) * | 1988-09-30 | 1992-07-21 | Microelectronics And Computer Technology Corporation | Diaphragm sealing apparatus |
| US7384270B2 (en) | 2000-10-18 | 2008-06-10 | Fujikura Ltd. | Electrical connector |
| JP2010535969A (ja) * | 2007-08-10 | 2010-11-25 | オーリコン レイボルド バキューム ゲーエムベーハー | ポンプ軸受配置 |
-
1984
- 1984-10-29 JP JP59225942A patent/JPS61104648A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6471050A (en) * | 1987-05-04 | 1989-03-16 | Varian Associates | Wafer holder |
| US5132873A (en) * | 1988-09-30 | 1992-07-21 | Microelectronics And Computer Technology Corporation | Diaphragm sealing apparatus |
| US7384270B2 (en) | 2000-10-18 | 2008-06-10 | Fujikura Ltd. | Electrical connector |
| JP2010535969A (ja) * | 2007-08-10 | 2010-11-25 | オーリコン レイボルド バキューム ゲーエムベーハー | ポンプ軸受配置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0228248B2 (enrdf_load_stackoverflow) | 1990-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8283783B2 (en) | Solder material, method for manufacturing the same, joined body, method for manufacturing the same, power semiconductor module, and method for manufacturing the same | |
| US3682729A (en) | Method of changing the physical properties of a metallic film by ion beam formation and devices produced thereby | |
| US3241931A (en) | Semiconductor devices | |
| US3617816A (en) | Composite metallurgy stripe for semiconductor devices | |
| US3429029A (en) | Semiconductor device | |
| US3701931A (en) | Gold tantalum-nitrogen high conductivity metallurgy | |
| JPS61104648A (ja) | 基板の冷却装置 | |
| US3922708A (en) | Method of producing high value ion implanted resistors | |
| US3609472A (en) | High-temperature semiconductor and method of fabrication | |
| JP6657435B2 (ja) | 構造体及び構造体製造方法 | |
| US3166449A (en) | Method of manufacturing semiconductor devices | |
| US4246693A (en) | Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum | |
| US3903324A (en) | Method of changing the physical properties of a metallic film by ion beam formation | |
| US3764511A (en) | Moated substrate holding pedestal | |
| WO2023085366A1 (ja) | 貫通電極基板、実装基板及び貫通電極基板の製造方法 | |
| US3617375A (en) | Electron beam evaporated quartz insulating material process | |
| US3695855A (en) | Doped electrical current-carrying conductive material | |
| JPS63193447A (ja) | 試料保持装置 | |
| US3146514A (en) | Method of attaching leads to semiconductor devices | |
| JPH0648831Y2 (ja) | 基板冷却装置用パッド | |
| JPS622632A (ja) | 静電吸着装置 | |
| JPS5950090B2 (ja) | 半導体装置の製造方法 | |
| KR840008212A (ko) | 유효핵 비등표면 테이프 및 전자소자 냉각 방법 | |
| JPS6339105B2 (enrdf_load_stackoverflow) | ||
| JPS63119242A (ja) | 基板 |