JPS61104633A - 半導体表面の帯電電荷量測定方法 - Google Patents

半導体表面の帯電電荷量測定方法

Info

Publication number
JPS61104633A
JPS61104633A JP59225845A JP22584584A JPS61104633A JP S61104633 A JPS61104633 A JP S61104633A JP 59225845 A JP59225845 A JP 59225845A JP 22584584 A JP22584584 A JP 22584584A JP S61104633 A JPS61104633 A JP S61104633A
Authority
JP
Japan
Prior art keywords
gate
wafer
area
electrode
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59225845A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036661B2 (en:Method
Inventor
Hiroyuki Yamane
山根　宏幸
Yasushi Higuchi
安史 樋口
Sumio Mizuno
水野　純男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP59225845A priority Critical patent/JPS61104633A/ja
Publication of JPS61104633A publication Critical patent/JPS61104633A/ja
Publication of JPH036661B2 publication Critical patent/JPH036661B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00—

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59225845A 1984-10-29 1984-10-29 半導体表面の帯電電荷量測定方法 Granted JPS61104633A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59225845A JPS61104633A (ja) 1984-10-29 1984-10-29 半導体表面の帯電電荷量測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59225845A JPS61104633A (ja) 1984-10-29 1984-10-29 半導体表面の帯電電荷量測定方法

Publications (2)

Publication Number Publication Date
JPS61104633A true JPS61104633A (ja) 1986-05-22
JPH036661B2 JPH036661B2 (en:Method) 1991-01-30

Family

ID=16835729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59225845A Granted JPS61104633A (ja) 1984-10-29 1984-10-29 半導体表面の帯電電荷量測定方法

Country Status (1)

Country Link
JP (1) JPS61104633A (en:Method)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63152140A (ja) * 1986-12-17 1988-06-24 Hitachi Ltd 半導体集積回路装置
JPH03270044A (ja) * 1990-03-19 1991-12-02 Sharp Corp 半導体装置の検査方法
JPH0450674A (ja) * 1990-06-12 1992-02-19 Toshiba Corp 絶縁破壊評価用試験素子
JPH0817884A (ja) * 1994-06-27 1996-01-19 Nec Corp 半導体装置およびその測定方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63152140A (ja) * 1986-12-17 1988-06-24 Hitachi Ltd 半導体集積回路装置
JPH03270044A (ja) * 1990-03-19 1991-12-02 Sharp Corp 半導体装置の検査方法
JPH0450674A (ja) * 1990-06-12 1992-02-19 Toshiba Corp 絶縁破壊評価用試験素子
JPH0817884A (ja) * 1994-06-27 1996-01-19 Nec Corp 半導体装置およびその測定方法

Also Published As

Publication number Publication date
JPH036661B2 (en:Method) 1991-01-30

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Legal Events

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