JPS61103533A - Apparatus for hydrothermal synthesis - Google Patents
Apparatus for hydrothermal synthesisInfo
- Publication number
- JPS61103533A JPS61103533A JP22749084A JP22749084A JPS61103533A JP S61103533 A JPS61103533 A JP S61103533A JP 22749084 A JP22749084 A JP 22749084A JP 22749084 A JP22749084 A JP 22749084A JP S61103533 A JPS61103533 A JP S61103533A
- Authority
- JP
- Japan
- Prior art keywords
- casing
- crucible
- hydrothermal synthesis
- heating
- saucer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、圧電材料用水晶結晶の製造や、各種鉱物の水
熱処理に用いる水熱合成装置において、内部構造を改善
して蒸発水分による機器汚染をなくすとともに、加熱温
度のより高温化、反応用部材の反復使用の可能等を企図
したものに関する。Detailed Description of the Invention (Field of Industrial Application) The present invention is aimed at improving the internal structure of a hydrothermal synthesis device used for manufacturing quartz crystal for piezoelectric materials and hydrothermal treatment of various minerals. It is intended to eliminate contamination, raise the heating temperature, and enable repeated use of reaction members.
(従来の技術)
水熱合成装置は、水熱合成法を工業的規模のもとに実施
するための装置であり、水熱合成法は公知刊行物に係る
図書「高圧実験技術とその応用」(編者日本材料学会高
圧力部分委員会、発行所丸善株式会社、昭和44年9月
20日発行)の729頁以下742頁に亘って詳述され
るように、高温高圧の水または溶媒によって母剤の溶解
度を高め、反応速度を増加させることにより、常圧、沸
点以下の水または溶媒に溶けにくい化合物の単結晶を得
る水熱育成、あるいは天然鉱物や合成結晶を水熱処理し
て、不純物の抽出やひづみの除去を行なう水熱処理、更
には鉱物を水溶液で水熱処理し、異なる他の鉱物に変化
させる水熱変成を広義に包含す ′るものであり、
かかる水熱合成を行なう装置としては、同書第730頁
記載の図11−19、同書第737頁記載の図11・2
4に原則的に示される通りであり、図11・19につい
て同書記載を転用すれば、次の通りである。即ち添付第
2図において、装置本体21内の反応容器22内に上部
と下部で温度差をつけ、温度を高くした底部に母剤23
を入れ、種子結晶24を吊した枠を温度の低い上部に置
き、両者の間に孔の明いた金属円板25を置いて、上下
各部がそれぞれ均一な温度を保つようにし、容器22内
に内部圧力を上げるに必要な量の溶媒を入れ、容器の蓋
26を閉じた後加熱し、容器22内の温度および圧力を
上げるのである。反応温度に達すれば母剤23は溶解し
、下部の溶液は飽和し、容器上部は下部に比べて温度が
低いため、その部分の溶液は過飽和となり、種子結晶2
4上に図例の場合、水晶の成長が始まり、また上下の温
度差のため、容器内に対流が起生じ、溶液が循環するの
で結晶の成長が続くのである。同図は勿論水熱育成によ
る水晶の水熱合成の場合である。(Prior art) A hydrothermal synthesis device is a device for carrying out a hydrothermal synthesis method on an industrial scale, and the hydrothermal synthesis method is a book related to the well-known publication "High Pressure Experimental Technology and Its Applications". (edited by the High Pressure Subcommittee of the Japan Society of Materials Science, published by Maruzen Co., Ltd., published on September 20, 1962), pages 729 to 742, By increasing the solubility of the agent and increasing the reaction rate, hydrothermal growth can be used to obtain single crystals of compounds that are difficult to dissolve in water or solvents at normal pressure and below the boiling point, or by hydrothermal treatment of natural minerals and synthetic crystals to remove impurities. In a broad sense, it includes hydrothermal treatment for extraction and removal of strain, as well as hydrothermal metamorphism in which minerals are hydrothermally treated with an aqueous solution and transformed into different minerals.
The apparatus for carrying out such hydrothermal synthesis is shown in Figures 11-19 on page 730 of the same book, and Figures 11 and 2 on page 737 of the same book.
4, and if the description in the same book is adapted for FIGS. 11 and 19, it will be as follows. That is, in the attached FIG. 2, a temperature difference is created between the upper and lower parts of the reaction vessel 22 in the apparatus main body 21, and the base material 23 is placed at the bottom where the temperature is higher.
The frame with the seed crystal 24 suspended thereon is placed in the upper part where the temperature is low, and a perforated metal disk 25 is placed between the two to maintain a uniform temperature in each part of the upper and lower parts. The amount of solvent necessary to raise the internal pressure is added, the lid 26 of the container is closed, and the container 22 is heated to increase the temperature and pressure inside the container 22. When the reaction temperature is reached, the base material 23 will dissolve, and the solution at the bottom will become saturated.Since the temperature at the top of the container is lower than that at the bottom, the solution at that part will become supersaturated, and the seed crystals 2
In the example shown in Figure 4 above, crystal growth begins, and due to the temperature difference between the top and bottom, convection occurs within the container and the solution circulates, so crystal growth continues. The figure shows, of course, the case of hydrothermal synthesis of crystal by hydrothermal growth.
(発明が解決しようとする問題点)
従来技術における水熱合成装置においては、加圧雰囲気
下における水熱合成を行なうに当り、その多くは装置外
部から加熱する外熱方式を採用しているため、その加熱
温度は最高数百度(”C)程度でしか使用できないので
利用範囲が制限され、また反応容器内における溶媒等の
液体をカプセルに密封する方式を取っており、カプセル
方式では1回毎の使い捨てとなるため、製作コストが著
しく高価となる点において問題点がある。(Problems to be Solved by the Invention) In conventional hydrothermal synthesis apparatuses, when performing hydrothermal synthesis in a pressurized atmosphere, most of them adopt an external heating method in which heating is performed from outside the apparatus. The heating temperature can only be used at a maximum of several hundred degrees ("C"), which limits its range of use.Also, a method is used in which liquids such as solvents in the reaction vessel are sealed in capsules, and in the capsule method, each Since it is disposable, there is a problem in that the manufacturing cost is extremely high.
(問題点を解決するための手段)
本発明は、従来装置における問題点を解決し、その加熱
方式を反応容器内における内熱方式として温度の最高制
限を解除し、かつ内部加熱源が液体蒸発、対流等によっ
て汚染されることを確実に防止し、また被合成材料の収
容るつぼを反復使用できる内部構造としたものであり、
具体的には、上、下蓋によって開閉自在とされる高圧容
器における高圧室内に断熱材を介して加熱源を内蔵する
とともに、該加熱源の内側に頂部の閉鎖された逆コツプ
状の気密ケーシングを配置し、該ケーシングの下部に圧
媒通路を開設するとともにケーシン 1グ下
端を前記下蓋上に配置した受皿内において該受皿底によ
り支承することにある。(Means for Solving the Problems) The present invention solves the problems in conventional devices, uses an internal heating method in the reaction vessel as a heating method, lifts the maximum temperature limit, and uses liquid evaporation as an internal heating source. It has an internal structure that reliably prevents contamination due to convection, etc., and allows the crucible containing the material to be synthesized to be used repeatedly.
Specifically, in a high-pressure container that can be opened and closed by upper and lower lids, a heating source is built into the high-pressure chamber via a heat insulating material, and an inverted cup-shaped airtight casing with a closed top is placed inside the heating source. A pressure medium passage is opened in the lower part of the casing, and the lower end of the casing is supported by the bottom of the saucer in a saucer disposed on the lower lid.
(作 用)
本発明の技術的手段によれば、第1図に示すように、装
置本体となる上蓋2および下蓋3によって開閉自在とさ
れる密封構造の高圧容器1によって構成される高圧室4
の内部に断熱材5を介して、内蔵加熱源としてヒータ6
を配設し、このヒータ6の内側にその頂部7aが閉され
、下端7bは開口状とされた逆コツプ状の気密ケーシン
グ7を配設し、該ケーシング7の下部周側に圧媒通路8
を穿設するとともに、ケーシング7の下端7bは、前記
した下蓋3上に載置した受皿9の周縁9aの内側におい
て、受皿9の底に支承させ、この気密ケーシング7内に
炉床10を介してるつぼ11を位置させ、気密ケーシン
グ7の頂部7aを利用して種子結晶17を吊すようにし
、またるつぼ11内に水溶液(例えばチ多ン酸化物等)
13を収容し、高圧容器1の高圧室4内に供給する圧媒
(例えばアルゴンガス等)を前記圧媒通路8を介して気
密ケーシング7内に流通させることにより、ケーシング
内外を均等の高圧雰囲気化し、ヒータ6による加熱を介
し、水熱合成を行なわせるのである。即ち本発明によれ
ば、気密ケーシング7と受皿9の組合せ、更に高圧室4
においてケーシング7を囲んでヒータ6を配設する構成
により、前記圧媒加圧並びヒータ6による加熱下に、水
熱合成を行なう場合、るつぼ11内の水溶液13が蒸発
してるつぼ上方に移動し、一部の蒸発水分は上下温度差
(上部は高温部、下部は低温部)による対流を介し、気
密ケーシング7の内面に沿って下方へ移動するが、下方
は即ち低温域のため、到達した蒸発水分は凝固してケー
シング7の下端を支承して囲んでいる受皿9内へ貯溜。(Function) According to the technical means of the present invention, as shown in FIG. 4
A heater 6 is installed as a built-in heating source through a heat insulating material 5 inside the
is disposed inside the heater 6, and an inverted cup-shaped airtight casing 7 whose top part 7a is closed and whose lower end 7b is open is disposed, and a pressure medium passage 8 is provided on the lower peripheral side of the casing 7.
At the same time, the lower end 7b of the casing 7 is supported on the bottom of the saucer 9 inside the peripheral edge 9a of the saucer 9 placed on the lower lid 3, and the hearth 10 is placed inside the airtight casing 7. The crucible 11 is positioned through the crucible 11, the seed crystal 17 is suspended using the top 7a of the airtight casing 7, and an aqueous solution (for example, titanium oxide, etc.) is placed in the crucible 11.
13 and is supplied to the high-pressure chamber 4 of the high-pressure vessel 1 by flowing a pressure medium (for example, argon gas, etc.) into the airtight casing 7 through the pressure medium passage 8, thereby creating an even high-pressure atmosphere inside and outside the casing. The hydrothermal synthesis is carried out through heating by the heater 6. That is, according to the present invention, the combination of the airtight casing 7 and the saucer 9 as well as the high pressure chamber 4
Due to the configuration in which the heater 6 is disposed surrounding the casing 7, when hydrothermal synthesis is performed while the pressure medium is pressurized and heated by the heater 6, the aqueous solution 13 in the crucible 11 evaporates and moves above the crucible. Some of the evaporated moisture moves downward along the inner surface of the airtight casing 7 through convection due to the vertical temperature difference (the upper part is a high temperature part and the lower part is a low temperature part), but since the lower part is a low temperature region, it reaches The evaporated water solidifies and is stored in a saucer 9 that supports and surrounds the lower end of the casing 7.
されることになる。このさいケーシング7の上方、即ち
頂部7a側は高温部であるとともに完全に気密が保たれ
ているので、蒸発水分はケーシング外部へは全く流出し
ないのであり、これによって内蔵加熱源であるヒータ6
、またヒータを支持している碍子12等の装置部材が蒸
発水分によって汚染されるおそれは全くなく、完全に保
護されると同時にヒータ6による内熱方式のため、加熱
温度は従来の数100℃程度に止まることなく、例えば
2000℃の加熱も容易に可能となるのである。またカ
プセル方式と違って、開放されたるつぼ11は反復して
使用することも、上、下蓋2.3の開放、気密ケーシン
グ7の取出しにより、容易に可能となるのである。will be done. At this time, the upper part of the casing 7, that is, the top 7a side, is a high temperature part and is completely airtight, so that no evaporated moisture flows out of the casing.
In addition, there is no risk of equipment components such as the insulator 12 supporting the heater being contaminated by evaporated moisture, and are completely protected.At the same time, since the heater 6 is an internal heating method, the heating temperature is several hundred degrees Celsius compared to the conventional method. For example, heating to 2000° C. is easily possible. Also, unlike the capsule method, the opened crucible 11 can be easily used repeatedly by opening the upper and lower lids 2.3 and taking out the airtight casing 7.
(実施例)
本発明の適切な実施例を第1図について説示する。装置
本体となる高圧容器1、開閉自在に密封する上蓋2下蓋
3は従来型式のそれと同様であって差支えなく、下蓋3
上に気密用ケーシング7の下端7bの外径より若干大径
の内径を持つ周縁9aを立起した受皿9を配置し、該受
皿9内にその頂部7aが閉され、下端7bは開口された
金属製等の気密ケーシング7を、その下端7bが周縁9
a内において受皿9の底に支承されるように載置支承さ
せる。EXAMPLE A suitable example of the invention is illustrated with reference to FIG. The high-pressure container 1, which is the main body of the device, the upper lid 2, which is sealed so that it can be opened and closed freely, and the lower lid 3, may be the same as those of the conventional model.
A saucer 9 with an upright peripheral edge 9a having an inner diameter slightly larger than the outer diameter of the lower end 7b of the airtight casing 7 is placed above the saucer 9, and the top 7a of the saucer 9 is closed and the lower end 7b is open. The lower end 7b of the airtight casing 7 made of metal or the like is the peripheral edge 9.
It is placed and supported in a manner such that it is supported on the bottom of the saucer 9.
気密ケーシング7の下部周側に圧媒通路8を穿設すると
ともに、圧媒通路8より上位の周側に骨盤14を張り出
し状に付設し、この骨盤14を利用して図示のように、
ケーシング7と同形の断熱材5を立設し、更にケーシン
グ7の外周面に碍子12.12を上下に付設して内部加
熱源としてのヒータ6を取付けるのである。前記気密ケ
ーシング7内にるつぼ11炉床10を配設するに当って
は、図例のように受皿9を利用し、該受皿9の底部上に
設けたスタンド15上に炉床10を設置し、この炉床1
0上にるつぼ11を載置することにより、るつぼ11の
取出しを容易とする。また図示のように受皿9の周縁9
aと、これと対応するケーシング7の下端7bの外周面
との間に、シールパツキン16を介設することもでき、
これによって受皿9に溜った凝固水分の逸出は完全に阻
止できる。A pressure medium passage 8 is bored in the lower circumferential side of the airtight casing 7, and a pelvis 14 is provided in a projecting manner on the circumferential side above the pressure medium passage 8, and using this pelvis 14, as shown in the figure,
A heat insulating material 5 having the same shape as the casing 7 is erected, and furthermore, insulators 12 and 12 are attached above and below the outer peripheral surface of the casing 7, and a heater 6 as an internal heating source is attached. When placing the crucible 11 and hearth 10 in the airtight casing 7, a saucer 9 is used as shown in the figure, and the hearth 10 is placed on a stand 15 provided on the bottom of the saucer 9. , this hearth 1
By placing the crucible 11 on 0, the crucible 11 can be easily taken out. Also, as shown in the figure, the peripheral edge 9 of the saucer 9
A seal packing 16 can also be interposed between the outer peripheral surface of the lower end 7b of the casing 7 and the corresponding outer peripheral surface of the lower end 7b of the casing 7,
This completely prevents the coagulated moisture accumulated in the saucer 9 from escaping.
(発明の効果)
本発明によれば、従来の加圧雰囲気下での水熱合成に当
り、装置外から加熱を行なう方式に比し、気密ケーシン
グ7と受皿9との構成により、高圧室4内において、ケ
ーシング−の外側にヒータ6を配置し、ケーシング−の
内側に反応用るつぼ11〜
を炉床10を介して設置することにより、加熱温度の制
限を解除してより高温度の自由な加熱が得られることに
なり、水熱合成の適用範囲を拡張できることになる。こ
のさい蒸発水分の対流による低温部(下方)において生
じる凝固水分は受皿9内に貯溜し、対流はケーシング内
面に沿って行なわれるので、内蔵加熱源であるヒータ6
やその取付は碍子12等の部材が蒸発水分によって汚染
されるおそれなく、安定な加熱条件を維持でき、しかも
カプセル式と相違して、開放形のるつぼ11を使用でき
るので、るつぼ11は反復使用でき、コスト的にも著し
く有利化されるのである。かつまた断熱材5ヒータ6等
の必要部材も気密ケーシング7を利用してコンパクトに
構成でき、必要構造の簡単化、高圧容器内外への出入操
作も著しく容易化され、取扱いも利便である。(Effects of the Invention) According to the present invention, when performing hydrothermal synthesis under a pressurized atmosphere, compared to a method in which heating is performed from outside the apparatus, the configuration of the airtight casing 7 and the saucer 9 allows the high pressure chamber 4 to By disposing the heater 6 outside the casing and installing the reaction crucibles 11 through the hearth 10 inside the casing, the restriction on heating temperature is lifted and higher temperatures can be freely achieved. This means that heating can be obtained and the scope of application of hydrothermal synthesis can be expanded. At this time, the solidified moisture generated in the low temperature part (lower part) due to the convection of evaporated moisture is stored in the saucer 9, and the convection occurs along the inner surface of the casing, so the heater 6, which is a built-in heating source,
The mounting of the insulator 12 can maintain stable heating conditions without the risk of contaminating components such as the insulator 12 with evaporated moisture, and unlike the capsule type, the open crucible 11 can be used, so the crucible 11 can be used repeatedly. This makes it extremely cost-effective. In addition, necessary components such as the heat insulating material 5 and the heater 6 can be constructed compactly by using the airtight casing 7, simplifying the necessary structure, and making it extremely easy to move in and out of the high-pressure vessel, making handling convenient.
第1図は本発明装置実施例の縦断正面図、第2図は水晶
結晶製作用水熱合成装置の模式図である。
1−高圧容器、2−上蓋、3・・−・下蓋、4−・−高
圧室、5−・断熱材、6−七−夕、7−・・気密ケーシ
ング、8−圧媒通路、9−・受皿、10・−・−炉床、
11−るつぼ、13−水溶液、17・・−・種子結晶。
特 許 出 願 人 株式会社神戸製鋼所第 1 図
第2図FIG. 1 is a longitudinal sectional front view of an embodiment of the apparatus of the present invention, and FIG. 2 is a schematic diagram of a hydrothermal synthesis apparatus for producing quartz crystal. 1-High pressure container, 2-Upper lid, 3--Lower lid, 4--High pressure chamber, 5--Insulating material, 6-Tanabata, 7--Airtight casing, 8-Pressure medium passage, 9 -・Saucer, 10・---hearth,
11- Crucible, 13- Aqueous solution, 17... Seed crystal. Patent applicant: Kobe Steel, Ltd. Figure 1 Figure 2
Claims (1)
る高圧室内に断熱材を介して加熱源を内蔵するとともに
、該加熱源の内側に頂部の閉鎖された逆コップ状の気密
ケーシングを配置し、該ケーシングの下部に圧媒通路を
開設するとともにケーシング下端を前記下蓋上に配置し
た受皿内において該受皿底により支承することを特徴と
する水熱合成装置。 2、気密ケーシングの下端外周面とこれを囲む受皿内周
面との間にシールパッキンを介設することを特徴とする
特許請求の範囲第1項記載の水熱合成装置。[Claims] 1. In a high-pressure container that can be opened and closed by upper and lower lids, a heating source is built into the high-pressure chamber via a heat insulating material, and an inverted cup-shaped container with a closed top is placed inside the heating source. A hydrothermal synthesis apparatus characterized in that an airtight casing is disposed, a pressure medium passage is opened in the lower part of the casing, and the lower end of the casing is supported by the bottom of the saucer in a saucer disposed on the lower lid. 2. The hydrothermal synthesis apparatus according to claim 1, characterized in that a seal packing is interposed between the outer circumferential surface of the lower end of the airtight casing and the inner circumferential surface of the saucer surrounding it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22749084A JPS61103533A (en) | 1984-10-29 | 1984-10-29 | Apparatus for hydrothermal synthesis |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22749084A JPS61103533A (en) | 1984-10-29 | 1984-10-29 | Apparatus for hydrothermal synthesis |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61103533A true JPS61103533A (en) | 1986-05-22 |
JPH043251B2 JPH043251B2 (en) | 1992-01-22 |
Family
ID=16861699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22749084A Granted JPS61103533A (en) | 1984-10-29 | 1984-10-29 | Apparatus for hydrothermal synthesis |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61103533A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010118423A3 (en) * | 2009-04-10 | 2011-02-17 | Eestor, Inc. | Hydrothermal processing in the wet-chemical preparation of mixed metal oxide ceramic powders |
US8853116B2 (en) | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
-
1984
- 1984-10-29 JP JP22749084A patent/JPS61103533A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8853116B2 (en) | 2006-08-02 | 2014-10-07 | Eestor, Inc. | Method of preparing ceramic powders |
US10239792B2 (en) | 2006-08-02 | 2019-03-26 | Eestor, Inc. | Method of preparing ceramic powders |
WO2010118423A3 (en) * | 2009-04-10 | 2011-02-17 | Eestor, Inc. | Hydrothermal processing in the wet-chemical preparation of mixed metal oxide ceramic powders |
Also Published As
Publication number | Publication date |
---|---|
JPH043251B2 (en) | 1992-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES2733066T3 (en) | Method for the separation of gold-silver alloys by vacuum distillation and device for its realization | |
JP2003532611A (en) | Apparatus and method for supplying arsenic impurity to silicon crystal growth process | |
US4382840A (en) | Hydrothermal crystal growing process and apparatus | |
JP7221873B2 (en) | Apparatus and method for producing purified, especially high-purity magnesium | |
JPS61103533A (en) | Apparatus for hydrothermal synthesis | |
KR101450294B1 (en) | Apparatus for preparing a crystal of cremated remains in a reverse vacuum | |
JP2001072486A (en) | Crystallization apparatus using embedded purification chamber and crystal-growing process | |
SE7710858L (en) | DEVICE FOR A CONTAINER FOR METALLURGIC TREATMENT OF METALS BY INDUCTIVE ROAD | |
US7038180B2 (en) | Isostat for treating materials and method of removing ceramic material from metal articles using the same | |
WO1996003192A1 (en) | Asphalt extractor | |
JPS61146336A (en) | Apparatus for hydrothermal synthesis | |
KR930702557A (en) | Manufacturing apparatus and manufacturing method of high dissociation compound semiconductor single crystal | |
US4559208A (en) | Hydrothermal crystal growing apparatus | |
RU2048776C1 (en) | Device for extraction of abietic mass | |
JP2007277041A (en) | Single crystal pulling apparatus | |
KR200282479Y1 (en) | A heeating equipment for cooking in a double boiler | |
JPS6253217B2 (en) | ||
JPS5467377A (en) | Plasma processing apparatus | |
SU1659040A1 (en) | Device for freezing embryos | |
JPS6329581B2 (en) | ||
JPH07133181A (en) | Method and device for hydrothermal synthesis | |
RU3445U1 (en) | DEVICE FOR REFINING LIGHT-MELTING SUBSTANCES | |
JPH063795B2 (en) | Heat treatment equipment for semiconductor manufacturing | |
JP2002234792A5 (en) | ||
JPH0787185B2 (en) | Semiconductor heat treatment method |