JPS61100923A - Molecular beam source - Google Patents
Molecular beam sourceInfo
- Publication number
- JPS61100923A JPS61100923A JP22202284A JP22202284A JPS61100923A JP S61100923 A JPS61100923 A JP S61100923A JP 22202284 A JP22202284 A JP 22202284A JP 22202284 A JP22202284 A JP 22202284A JP S61100923 A JPS61100923 A JP S61100923A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- plate
- thickness
- molecular beam
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は成分元素をルツボより分子線状で放出し、基板
上にエピタキシャル成長させるのに用いる分子線源の改
良に閃するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention aims to improve a molecular beam source used for emitting component elements from a crucible in the form of molecular beams and epitaxially growing them on a substrate.
MBE法によって作られる薄膜の欠陥の一原因と考えら
れているスピッティングや突沸現象による蒸着物粒子の
飛翔を防止するために、従来、第1図(例えば、特開昭
55−24841号公報)に示されるようにクヌーセン
・タイプのルツボlを使用していた。すなわちルツボ1
の分子線噴出口に穴のあいたフタ、または、フタ状の板
2を設けて、蒸着試料3の蒸着物粒子が直接ルツボ1か
ら飛翔するのを防止していた。しかし、これらフタには
板厚tがあり、その分だけ穴径りから噴出する分子線の
ルツボ噴出口での空間分布は狭められることになる。穴
径D(=2r)と板厚tとの比と0分子線の空間分布の
関係は第2図に示す如くになる。In order to prevent the flying of deposited particles due to spitting and bumping phenomena, which are considered to be one of the causes of defects in thin films produced by the MBE method, conventional methods have been used to prevent deposit particles from flying away due to spitting and bumping phenomena, which are considered to be one of the causes of defects in thin films produced by the MBE method. A Knudsen type crucible was used as shown in . That is, crucible 1
A lid with holes or a lid-like plate 2 was provided at the molecular beam outlet to prevent the deposit particles of the deposition sample 3 from directly flying out of the crucible 1. However, these lids have a plate thickness t, which narrows the spatial distribution of the molecular beam ejected from the hole diameter at the crucible ejection port. The relationship between the ratio of the hole diameter D (=2r) and the plate thickness t and the spatial distribution of the zero molecular line is as shown in FIG.
第2rRより、フタの板厚1=0の時、空間分布は角度
θ方向に最も良いcosineθの値の分布をし。From the second rR, when the lid thickness 1=0, the spatial distribution has the best value of cosine θ in the angle θ direction.
tが大きくなるにつれて、空間分布は狭められる。As t increases, the spatial distribution narrows.
ルツボ噴出口での分子線の空間分布が良いと言うことは
、、i着さ九る薄膜の膜厚分布の均一性が良いことであ
る。すなわち1分子線源と蒸着基板が同じ条件で蒸着を
行なった場合、基板上の膜厚分布は1=0の場合が最も
良い分布をすることになる。蒸着薄膜の欠陥を防止する
ために用いるルツボのフタは、板厚tが存在することに
より、噴出する分子線の空間分布が狭められ、蒸着され
る薄膜の膜厚分布を悪くさせる原因になっている。Good spatial distribution of the molecular beam at the crucible spout means good uniformity in the thickness distribution of the thin film deposited. That is, when vapor deposition is performed under the same conditions for the single molecule beam source and the vapor deposition substrate, the best film thickness distribution on the substrate is obtained when 1=0. The presence of the plate thickness t of the crucible lid used to prevent defects in the deposited thin film narrows the spatial distribution of the ejected molecular beams, causing the thickness distribution of the deposited thin film to deteriorate. There is.
本発明の目的は分子線によって蒸着される薄膜の欠陥を
防止すると共に膜厚分布の均一度も良好な分子線源を提
供することにある。An object of the present invention is to provide a molecular beam source that prevents defects in thin films deposited by molecular beams and has good uniformity in film thickness distribution.
本発明の分子線源は上記目的を達成するために。 The molecular beam source of the present invention achieves the above object.
ルツボ噴出口付近に設置するフタ状板に設ける穴を円錐
形状とするものである。The hole provided in the lid-like plate installed near the crucible spout is shaped like a cone.
以下1本発明の実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
本発明の一実施例を第3図(a)に示す、ルツボ1の先
端に設けたフタ2にあけた穴3の形状を円錐形にしてい
る。すなわち、穴径りの部分で板厚を0としている。実
際のフタの板厚tに対して、見かけの板厚を0にするこ
とにより、第2図で説明した通り、ルツボ1の分子線噴
出口で1分子線の空間分布を改善することができる(第
3図(b)参照)。An embodiment of the present invention is shown in FIG. 3(a), in which a hole 3 made in a lid 2 provided at the tip of a crucible 1 has a conical shape. That is, the plate thickness is set to 0 at the hole diameter portion. By setting the apparent plate thickness to 0 compared to the actual plate thickness t of the lid, the spatial distribution of one molecular beam at the molecular beam spout of crucible 1 can be improved, as explained in Fig. 2. (See Figure 3(b)).
本発明の別の実施例を第4図に示す、第4図の実施例は
第3図(a)の実施例のフタを上下逆に使用したもので
あるが、同じような効果が期待できる。Another embodiment of the present invention is shown in FIG. 4. The embodiment of FIG. 4 uses the lid of the embodiment of FIG. 3(a) upside down, and the same effect can be expected. .
また、第5図には本発明の更に別の実施例を示す、第5
図の実施例はフタ2に複数個の穴を設けたものであり、
ルツボ噴出口での分子線の空間分布をより改善するのに
役立つ0本実施例のようにルツボのフタに本発明を実施
することにより、フタを交換することにより、任意の分
子線の空間分布のものを選択できる別の効果が生まれる
。Further, FIG. 5 shows a fifth embodiment showing still another embodiment of the present invention.
The illustrated embodiment has a plurality of holes in the lid 2,
By implementing the present invention on the lid of a crucible as in this example, it is possible to improve the spatial distribution of molecular beams at the crucible spout. Another effect is created that allows you to select things.
以上説明したように、本発明によれば、穴の形状を円錐
形に形成したことにより蒸着薄膜の欠陥を低減させるこ
とができると共に、膜厚分布の均一度を向上させること
ができる。As described above, according to the present invention, by forming the hole in a conical shape, defects in the deposited thin film can be reduced, and the uniformity of the film thickness distribution can be improved.
第113!Iは従来例の説明のためのルツボの断面図で
あり、第2図はフタの板厚と穴径との比とルツボ噴出口
での分子線の空間分布との関係を説明するための図であ
り、第3図(a)(b)は本発明の詳細な説明するため
のルツボの断面図及び分子線の空間分布図、第4図は本
発明の他の実施例のルツボの断面図、第5図は本発明の
更に別の実施例のルツボの断面図である。
1・・・ルツボ、2・・・フタ状の板、3・・・蒸着試
料。
掃2呂
ひ
メ30
(b)113th! I is a cross-sectional view of a crucible for explaining a conventional example, and Figure 2 is a diagram for explaining the relationship between the ratio of the plate thickness of the lid to the hole diameter and the spatial distribution of molecular beams at the crucible spout. 3(a) and (b) are a cross-sectional view of a crucible and a spatial distribution diagram of molecular beams for explaining the present invention in detail, and FIG. 4 is a cross-sectional view of a crucible according to another embodiment of the present invention. , FIG. 5 is a sectional view of a crucible according to yet another embodiment of the present invention. 1... Crucible, 2... Lid-shaped plate, 3... Vapor deposition sample. Sweep 2 Ro Hime 30 (b)
Claims (1)
線源において、前記穴を円錐形に形成したことを特徴と
する分子線源。1. A molecular beam source comprising a lid-like plate having a hole at a molecular beam outlet, wherein the hole is formed in a conical shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22202284A JPS61100923A (en) | 1984-10-24 | 1984-10-24 | Molecular beam source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22202284A JPS61100923A (en) | 1984-10-24 | 1984-10-24 | Molecular beam source |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61100923A true JPS61100923A (en) | 1986-05-19 |
Family
ID=16775871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22202284A Pending JPS61100923A (en) | 1984-10-24 | 1984-10-24 | Molecular beam source |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61100923A (en) |
-
1984
- 1984-10-24 JP JP22202284A patent/JPS61100923A/en active Pending
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