JPS61100923A - Molecular beam source - Google Patents

Molecular beam source

Info

Publication number
JPS61100923A
JPS61100923A JP22202284A JP22202284A JPS61100923A JP S61100923 A JPS61100923 A JP S61100923A JP 22202284 A JP22202284 A JP 22202284A JP 22202284 A JP22202284 A JP 22202284A JP S61100923 A JPS61100923 A JP S61100923A
Authority
JP
Japan
Prior art keywords
crucible
plate
thickness
molecular beam
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22202284A
Other languages
Japanese (ja)
Inventor
Kunihiro Takahashi
邦弘 高橋
Masao Terasaki
寺崎 政男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP22202284A priority Critical patent/JPS61100923A/en
Publication of JPS61100923A publication Critical patent/JPS61100923A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To prevent the outbreak of the defect of an evaporated thin film and to make excellent the uniformity of a film thickness distribution, by making conical a hole bored in a cover-shaped plate provided around a jetting port of a crucible. CONSTITUTION:A hole 3 bored in a cover 2 provided in the end of a crucible 1 is shaped in a cone, so that the thickness of a plate in the part of the diameter D of the hole be zero. By reducing to zero an apparent thickness of the plate in relation to an actual thickness (t) of the plate of the cover, in this way, the spatial distribution of molecular beams in the molecular beam jetting port of the crucible 1 can be improved. Consequently, the defect of an evaporated thin film can be reduced, and also the uniformity of a film thickness distribution can be improved.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は成分元素をルツボより分子線状で放出し、基板
上にエピタキシャル成長させるのに用いる分子線源の改
良に閃するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention aims to improve a molecular beam source used for emitting component elements from a crucible in the form of molecular beams and epitaxially growing them on a substrate.

〔発明の背景〕[Background of the invention]

MBE法によって作られる薄膜の欠陥の一原因と考えら
れているスピッティングや突沸現象による蒸着物粒子の
飛翔を防止するために、従来、第1図(例えば、特開昭
55−24841号公報)に示されるようにクヌーセン
・タイプのルツボlを使用していた。すなわちルツボ1
の分子線噴出口に穴のあいたフタ、または、フタ状の板
2を設けて、蒸着試料3の蒸着物粒子が直接ルツボ1か
ら飛翔するのを防止していた。しかし、これらフタには
板厚tがあり、その分だけ穴径りから噴出する分子線の
ルツボ噴出口での空間分布は狭められることになる。穴
径D(=2r)と板厚tとの比と0分子線の空間分布の
関係は第2図に示す如くになる。
In order to prevent the flying of deposited particles due to spitting and bumping phenomena, which are considered to be one of the causes of defects in thin films produced by the MBE method, conventional methods have been used to prevent deposit particles from flying away due to spitting and bumping phenomena, which are considered to be one of the causes of defects in thin films produced by the MBE method. A Knudsen type crucible was used as shown in . That is, crucible 1
A lid with holes or a lid-like plate 2 was provided at the molecular beam outlet to prevent the deposit particles of the deposition sample 3 from directly flying out of the crucible 1. However, these lids have a plate thickness t, which narrows the spatial distribution of the molecular beam ejected from the hole diameter at the crucible ejection port. The relationship between the ratio of the hole diameter D (=2r) and the plate thickness t and the spatial distribution of the zero molecular line is as shown in FIG.

第2rRより、フタの板厚1=0の時、空間分布は角度
θ方向に最も良いcosineθの値の分布をし。
From the second rR, when the lid thickness 1=0, the spatial distribution has the best value of cosine θ in the angle θ direction.

tが大きくなるにつれて、空間分布は狭められる。As t increases, the spatial distribution narrows.

ルツボ噴出口での分子線の空間分布が良いと言うことは
、、i着さ九る薄膜の膜厚分布の均一性が良いことであ
る。すなわち1分子線源と蒸着基板が同じ条件で蒸着を
行なった場合、基板上の膜厚分布は1=0の場合が最も
良い分布をすることになる。蒸着薄膜の欠陥を防止する
ために用いるルツボのフタは、板厚tが存在することに
より、噴出する分子線の空間分布が狭められ、蒸着され
る薄膜の膜厚分布を悪くさせる原因になっている。
Good spatial distribution of the molecular beam at the crucible spout means good uniformity in the thickness distribution of the thin film deposited. That is, when vapor deposition is performed under the same conditions for the single molecule beam source and the vapor deposition substrate, the best film thickness distribution on the substrate is obtained when 1=0. The presence of the plate thickness t of the crucible lid used to prevent defects in the deposited thin film narrows the spatial distribution of the ejected molecular beams, causing the thickness distribution of the deposited thin film to deteriorate. There is.

〔発明の目的〕[Purpose of the invention]

本発明の目的は分子線によって蒸着される薄膜の欠陥を
防止すると共に膜厚分布の均一度も良好な分子線源を提
供することにある。
An object of the present invention is to provide a molecular beam source that prevents defects in thin films deposited by molecular beams and has good uniformity in film thickness distribution.

〔発明の概要〕[Summary of the invention]

本発明の分子線源は上記目的を達成するために。 The molecular beam source of the present invention achieves the above object.

ルツボ噴出口付近に設置するフタ状板に設ける穴を円錐
形状とするものである。
The hole provided in the lid-like plate installed near the crucible spout is shaped like a cone.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.

本発明の一実施例を第3図(a)に示す、ルツボ1の先
端に設けたフタ2にあけた穴3の形状を円錐形にしてい
る。すなわち、穴径りの部分で板厚を0としている。実
際のフタの板厚tに対して、見かけの板厚を0にするこ
とにより、第2図で説明した通り、ルツボ1の分子線噴
出口で1分子線の空間分布を改善することができる(第
3図(b)参照)。
An embodiment of the present invention is shown in FIG. 3(a), in which a hole 3 made in a lid 2 provided at the tip of a crucible 1 has a conical shape. That is, the plate thickness is set to 0 at the hole diameter portion. By setting the apparent plate thickness to 0 compared to the actual plate thickness t of the lid, the spatial distribution of one molecular beam at the molecular beam spout of crucible 1 can be improved, as explained in Fig. 2. (See Figure 3(b)).

本発明の別の実施例を第4図に示す、第4図の実施例は
第3図(a)の実施例のフタを上下逆に使用したもので
あるが、同じような効果が期待できる。
Another embodiment of the present invention is shown in FIG. 4. The embodiment of FIG. 4 uses the lid of the embodiment of FIG. 3(a) upside down, and the same effect can be expected. .

また、第5図には本発明の更に別の実施例を示す、第5
図の実施例はフタ2に複数個の穴を設けたものであり、
ルツボ噴出口での分子線の空間分布をより改善するのに
役立つ0本実施例のようにルツボのフタに本発明を実施
することにより、フタを交換することにより、任意の分
子線の空間分布のものを選択できる別の効果が生まれる
Further, FIG. 5 shows a fifth embodiment showing still another embodiment of the present invention.
The illustrated embodiment has a plurality of holes in the lid 2,
By implementing the present invention on the lid of a crucible as in this example, it is possible to improve the spatial distribution of molecular beams at the crucible spout. Another effect is created that allows you to select things.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、穴の形状を円錐
形に形成したことにより蒸着薄膜の欠陥を低減させるこ
とができると共に、膜厚分布の均一度を向上させること
ができる。
As described above, according to the present invention, by forming the hole in a conical shape, defects in the deposited thin film can be reduced, and the uniformity of the film thickness distribution can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第113!Iは従来例の説明のためのルツボの断面図で
あり、第2図はフタの板厚と穴径との比とルツボ噴出口
での分子線の空間分布との関係を説明するための図であ
り、第3図(a)(b)は本発明の詳細な説明するため
のルツボの断面図及び分子線の空間分布図、第4図は本
発明の他の実施例のルツボの断面図、第5図は本発明の
更に別の実施例のルツボの断面図である。 1・・・ルツボ、2・・・フタ状の板、3・・・蒸着試
料。 掃2呂 ひ メ30 (b)
113th! I is a cross-sectional view of a crucible for explaining a conventional example, and Figure 2 is a diagram for explaining the relationship between the ratio of the plate thickness of the lid to the hole diameter and the spatial distribution of molecular beams at the crucible spout. 3(a) and (b) are a cross-sectional view of a crucible and a spatial distribution diagram of molecular beams for explaining the present invention in detail, and FIG. 4 is a cross-sectional view of a crucible according to another embodiment of the present invention. , FIG. 5 is a sectional view of a crucible according to yet another embodiment of the present invention. 1... Crucible, 2... Lid-shaped plate, 3... Vapor deposition sample. Sweep 2 Ro Hime 30 (b)

Claims (1)

【特許請求の範囲】[Claims]  分子線噴出口に穴を有するフタ状板を設けてなる分子
線源において、前記穴を円錐形に形成したことを特徴と
する分子線源。
1. A molecular beam source comprising a lid-like plate having a hole at a molecular beam outlet, wherein the hole is formed in a conical shape.
JP22202284A 1984-10-24 1984-10-24 Molecular beam source Pending JPS61100923A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22202284A JPS61100923A (en) 1984-10-24 1984-10-24 Molecular beam source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22202284A JPS61100923A (en) 1984-10-24 1984-10-24 Molecular beam source

Publications (1)

Publication Number Publication Date
JPS61100923A true JPS61100923A (en) 1986-05-19

Family

ID=16775871

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22202284A Pending JPS61100923A (en) 1984-10-24 1984-10-24 Molecular beam source

Country Status (1)

Country Link
JP (1) JPS61100923A (en)

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