【発明の詳細な説明】
水溝又は水穴内の水により氷結刺着し、その状態におい
て同原材料を加工することを斗ｊＩ徴とする精冨加工法
に関するものであってシリコンウェハー′）°の粘Ｘビ
７；し化加工、対称度精富加工を能率良く行うことを１
」白りとするものである。Detailed Description of the Invention This process relates to a precision processing method in which the raw material is frozen and adhered by water in a water groove or a water hole, and processed in that state, and is a process for processing silicon wafers. 1. Efficiently perform adhesive machining and symmetry-rich machining.
”It is white.
本発明を図面に小才実施例について説明すると機枠に回
転台盤１を設け、同回転台盤１の支持面２（台面）に対
面する面３をイＪする回転盤・１をｊ，１降調ｆη１１
１在に設けてなる仕Ｊ二ＮＨ ５において、Ｊ−記支持
面２に第４図〜第１３図に示すように水溝又は水穴８を
設は水嵩又は水穴８から表面張力によって若干盛上った
水をシリコンウェハー７（薄い半導体板）で押えて水膜
層（４〜７Å以上）を形成する。そして支持面２の支軸
９を上記回転台盤ｌの軸受に支持するものである。この
ようにして上記シリコンウェハー７の載置部即ち仕上加
工部６を一２０６Ｃ以下（−３０〜−５０℃以下）に保
持し、同回転台盤１の支持面２にシリコンウェハー７（
薄い半導体板）を支持することが出来る。シリコンウェ
ハー７に代えてカラス薄片（ウェハー７へのプリント配
線透写用印画又は陽画ガラス薄板）、ＧＧＧ （カドリ
ニウム・ガリウムΦカーネット）、フェライト、水晶お
よびセラミック、カリュームひ素その他の半導体および
金属等の材料であっても良い。そして回転台盤１および
回転盤４を第１図に示すように矢印の方向に適当な圧力
で相対運動させ研１＆剤を用いて上記によりウェハー７
の上面を１￥耗と研削の内作用によりＨｆ２きカッ同ウ
ェハー７の厚さを３００ル以下に形成することか出来る
。その後電磁波その他の手段により」二記氷結を溶解し
同ウェハー７を支持面２から分離し同ウェハー７を反転
して上述同様に同ウェハー７を四面２に支持し上述同様
に同ウェハー７の上面を磨き同ウェハー７の表”Ａ ＋
ｒ＋：Ｊ面を支十〜面２と対Ｗｊ３の平行精度と同一精
度の平行面に仕上げることが出来る。To explain the present invention with reference to the drawings, a small example embodiment is provided. 1 downgrading fη11
1, the water groove or water hole 8 is provided on the J-marked support surface 2 as shown in FIGS. 4 to 13. The raised water is held down by a silicon wafer 7 (thin semiconductor board) to form a water film layer (4 to 7 Å or more). The support shaft 9 of the support surface 2 is supported by the bearing of the rotary table l. In this way, the silicon wafer 7 mounting section, that is, the finishing processing section 6, is maintained at a temperature of -30 to -50 degrees Celsius or below, and the silicon wafers 7 (
can support thin semiconductor plates). Instead of the silicon wafer 7, glass flakes (prints or positive glass thin plates for printing wiring on the wafer 7), GGG (cadrinium gallium Φ carnet), ferrite, crystal and ceramics, potassium arsenic and other semiconductors and metals, etc. It may be a material. Then, as shown in FIG. 1, the rotary table 1 and the rotary table 4 are moved relative to each other with appropriate pressure in the direction of the arrow, and the wafer 7 is polished using the polishing agent 1 and the polishing agent.
The thickness of the wafer 7 can be formed to be less than 300 μm with Hf2 on the upper surface due to internal wear and grinding. Thereafter, the wafer 7 is melted by electromagnetic waves or other means, the wafer 7 is separated from the support surface 2, the wafer 7 is turned over, and the wafer 7 is supported on all sides 2 in the same manner as described above, and the upper surface of the wafer 7 is Polish the surface of the same wafer 7 “A +
r+: The J surface can be finished into a parallel surface with the same accuracy as the parallelism of the support surface 2 and the pair Wj3.
従来支持面２に上記ウェハー７を接着剤によって接着し
たものである。ところが接着剤は柔軟であるためウェハ
ー７の下面と支持面２とを平行に保ハし難く、かつ接着
剤は薄くすると分子構造の限界に辻して接着力を失うし
、接７１剤は加熱および溶剤により固定および分子１１
させるため作業能率を向」二し知い欠陥があった。Conventionally, the wafer 7 is bonded to the support surface 2 using an adhesive. However, since the adhesive is flexible, it is difficult to keep the lower surface of the wafer 7 and the supporting surface 2 parallel to each other, and when the adhesive is thinned, it reaches the limit of its molecular structure and loses its adhesive strength. and fixed by solvent and molecule 11
In order to improve work efficiency, there was a known flaw.
本発明は上記欠陥に鑑みなされたものであって、本発明
は上述のように支持面と原材料とを支持面に形成した水
溝又は水穴内の水により氷結千１ノｊし、その状７ｍ’
）において同ノル（材料を加工することを４、〜徴とす
る精布加工法であるから、支持面と原材料とは水の凍結
によって富着し、支持面２と原材料７の下面とを平行に
保持し得て原材料７の対称精度および平行精度を向上し
かつ同原材料７の厚さを著しく減少し得るばかりでなく
、原材料７は迅速に付着しかつ解凍により迅速に分離し
作業能率を向上し得る効果がある。The present invention has been made in view of the above-mentioned defects, and the present invention has been made in view of the above-mentioned drawbacks. '
), the supporting surface and the raw material are enriched by freezing water, and the supporting surface 2 and the lower surface of the raw material 7 are parallel to each other. Not only can the raw material 7 be held at a constant temperature, improving the symmetry accuracy and parallelism accuracy of the raw material 7, and the thickness of the raw material 7 can be significantly reduced, but the raw material 7 can also be quickly attached and quickly separated by thawing, improving work efficiency. There is a potential effect.
【図面の簡単な説明】[Brief explanation of the drawing]
第１図は本発明による加工状態を示す正面図、第２図は
原材料支持面の平面図、第３図は原材料との容器内氷結
状態の正面図、第４図は支持面の他の実施例の平面図、
第５図は第４図の正面図、第６図は支持面の他の実施例
の平面図、第７図は負′シロ図の正面図、第８図は支持
面の他の実施例の平面図、第９図は第８図の正面図、第
１０図は支持面の他の実施例の平面図、第１１図は第１
０図の拡大正面図、第１２図は支持面のその他の実施例
の平面図、第１３図は第１２図の拡大正面図で ゛ある
。
２・・支持面、７・・原材料、８・・水溝又は水穴。
特許出願人
長 浦 善 昭Fig. 1 is a front view showing the processing state according to the present invention, Fig. 2 is a plan view of the raw material support surface, Fig. 3 is a front view of the frozen state in the container with the raw material, and Fig. 4 is another embodiment of the support surface. Example floor plan,
FIG. 5 is a front view of FIG. 4, FIG. 6 is a plan view of another embodiment of the support surface, FIG. 7 is a front view of a negative angle diagram, and FIG. 8 is a front view of another embodiment of the support surface. 9 is a front view of FIG. 8, FIG. 10 is a plan view of another embodiment of the support surface, and FIG. 11 is a front view of FIG.
0 is an enlarged front view of FIG. 12, FIG. 12 is a plan view of another embodiment of the support surface, and FIG. 13 is an enlarged front view of FIG. 12. 2. Support surface, 7. Raw material, 8. Water groove or water hole. Chief Patent Applicant Yoshiaki Ura