JPS6097655A - Wire for bonding - Google Patents

Wire for bonding

Info

Publication number
JPS6097655A
JPS6097655A JP58204802A JP20480283A JPS6097655A JP S6097655 A JPS6097655 A JP S6097655A JP 58204802 A JP58204802 A JP 58204802A JP 20480283 A JP20480283 A JP 20480283A JP S6097655 A JPS6097655 A JP S6097655A
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
melted
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58204802A
Other languages
Japanese (ja)
Inventor
Michio Okamoto
道夫 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58204802A priority Critical patent/JPS6097655A/en
Publication of JPS6097655A publication Critical patent/JPS6097655A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent an oxide film from being formed on the surface of a wire restraining solubility from deteriorating to assure favorable ball forming capacity. CONSTITUTION:The surface of Al wire 2 for bonding is coated with a protecting film 3 comprising Ni or Ni alloy to prevent Al from oxidizing. When the end of the wire 1 is heated and melted for wire bonding by an electric torch etc., a ball 4 is formed at the end of the wire 1. The surface layer of the end part wherein Al2O3 film is prevented from being formed may be immediately melted by initial heating to accelerate rapid propagation of heating or melting effect inside the wire. The end of the Al wire 2 thoroughly melted may be formed into almost true ball due to effectively applicable surface tension.

Description

【発明の詳細な説明】 ［技術分野］ 本発明は、ボンディング技術、特に、電気的な接続に使
用されるボンディング用ワイヤに関し、たとえば、半導
体装置の電気的接続に利用して有効な技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to bonding technology, particularly to bonding wires used for electrical connection, and relates to a technology that is effective for use in electrical connection of semiconductor devices, for example.

［背景技術］ 半導体装置において、ペレットに形成された集積回路の
電極と、外部へのリードとを電気的に接続する場合、ア
ルミニウム（ＡＩ）からなるボンディング用ワイヤを使
用することが劣えられる。[Background Art] In a semiconductor device, when electrically connecting an electrode of an integrated circuit formed on a pellet to an external lead, it is inferior to use a bonding wire made of aluminum (AI).

しかし、かかるボンディング用ワイヤにおいては、その
表面に酸化アルミニウム（Ａ１２０３）が形成され、か
つ、このＡｌ２Ｏ５の融点カベきわめて高いため、ネイ
ルポーＪしを作り出す場合、ボールの形状が不通正にな
る等ボール成形性力（（氏子するという問題点があるこ
とが、本発明者Ｇこよって明らかにされた。However, in such a bonding wire, aluminum oxide (A1203) is formed on its surface, and the melting point range of this Al2O5 is extremely high. The inventor G has clarified that there is a problem with shrine parishioners.

［発明の目的］ 本発明の目的は、適正なボールを作り出すことができる
ボンディング技術を提供することにある。[Object of the Invention] An object of the present invention is to provide a bonding technique that can produce a proper ball.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面力１ら明らめ・になるであ
ろう。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［発明の概要］ 本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、次の通りである。[Summary of the Invention] A brief overview of typical inventions disclosed in this application is as follows.

すなわち、ワイヤの表面に酸化防止保護膜を被着するこ
とにより、ワイヤの表面に酸化４カく形成されることを
防止し、溶融性の低下を抑制して良好なボール成形性を
確保するようにしたものである。In other words, by applying an oxidation-preventing protective film to the surface of the wire, it is possible to prevent oxidation from forming on the surface of the wire, suppress a decrease in meltability, and ensure good ball formability. This is what I did.

［実施例］ 第１図は本発明の一実施例であるボンディング用ワイヤ
を示す一部切断拡大正面図、第２図および第３図はその
作用を説明するための各一部切断拡大正面図である。[Example] Fig. 1 is a partially cut-away enlarged front view showing a bonding wire according to an embodiment of the present invention, and Figs. 2 and 3 are partially cut-away enlarged front views for explaining the operation thereof. It is.

本実施例において、このボンディング用ワイヤ１はＡ’
　１からなるＡ１ワイヤ２を備えており、Ａｌワイヤ２
０表面には、ＡＩの酸化を防止するために、ニッケル（
Ｎｉ）またはその合金からなる保護膜３が被着されてい
る。酸化防止保護膜３は、ＡＩワイヤ２の表面にＡｌ２
Ｏ３が形成されていない状態で、Ｎｉ等をメッキや蒸着
等の適当な手段により全体的にできるだけ均一に被着さ
れる。In this embodiment, this bonding wire 1 is A'
It is equipped with an A1 wire 2 consisting of 1, an Al wire 2
0 surface is coated with nickel (nickel) to prevent oxidation of AI.
A protective film 3 made of Ni) or an alloy thereof is deposited. The anti-oxidation protective film 3 is made of Al2 on the surface of the AI wire 2.
In a state where O3 is not formed, Ni or the like is deposited as uniformly as possible over the entire surface by appropriate means such as plating or vapor deposition.

次に作用を説明する。Next, the action will be explained.

前記構成にかかるボンディング用ワイヤ１を用いてワイ
ヤボンディングを実施する際、このワイヤ１の先端部を
電気トーチ等により加熱溶融させると、第２図に示され
るように、ワイヤ１の先端にはボール４が溶融体の表面
張力によって形成される。このとき、ＡＩワイヤ２の表
面にはＮｉ保護ＦＩ３が被着され、ＡＩ２．０３膜の形
成が防止されているので、先端部表面層は初期加熱によ
りただちに溶融し、熱ないしは溶融の内部への迅速な伝
播を促す。これにより、ＡＩワイヤ２の先端部は高い溶
融状態になるため、表面張力が効果的に作用し、真珠に
近いボールが成形されることになる。When performing wire bonding using the bonding wire 1 having the above structure, when the tip of the wire 1 is heated and melted with an electric torch or the like, a ball is formed at the tip of the wire 1, as shown in FIG. 4 is formed by the surface tension of the melt. At this time, the surface of the AI wire 2 is coated with Ni protective FI3 to prevent the formation of an AI2.03 film, so the surface layer at the tip immediately melts due to the initial heating, and the heat or the melted material flows into the interior. Encourage rapid transmission. As a result, the tip of the AI wire 2 is brought into a highly molten state, so that surface tension acts effectively and a ball similar to a pearl is formed.

これに対し、Ａｌ２Ｏ３膜が形成されたＡＩワイヤでは
、Ａｌ２Ｏ３膜は耐火性であるため、電気トーチの初期
加熱によって十分に溶融せず、熱ないしは溶融の内部へ
の伝播が阻害される。これにより、十分な溶融状態が作
り出されず、表面張力が有効に作用されないため、ボー
ルが真球にならずに不適正な形状に成形されてしまう。On the other hand, in the case of an AI wire on which an Al2O3 film is formed, since the Al2O3 film is fire-resistant, it is not sufficiently melted by the initial heating with an electric torch, and the propagation of heat or melting to the inside is inhibited. As a result, a sufficient molten state is not created and surface tension is not effectively applied, resulting in the ball not being perfectly spherical but being formed into an inappropriate shape.

前述のようにして、はぼ真球形状のボール４が形成され
ると、第３図に示されるように、半導体装置におけるペ
レット５の電極上のポンディングパッド６にボール４を
溶着させた場合、ボール４がそのバッド６全体によ（な
じんで良好な接合性が得られ、またワイヤ１の方向が常
に一定に維持される等々によりボンダビイリティが向上
されることになる。When the ball 4 having a nearly perfect spherical shape is formed as described above, the ball 4 is welded to the bonding pad 6 on the electrode of the pellet 5 in the semiconductor device, as shown in FIG. , the ball 4 is fitted over the entire pad 6 to obtain good bonding properties, and the direction of the wire 1 is always maintained constant, so that bondability is improved.

続いて、第３図に示されるように、リード７のボンディ
ングバンド８上にワイヤ１の他端部がボンディングされ
る場合、ワイヤ１のボンディング部に超音波エネルギが
加えられることによりワイヤ１とパッド８との接合が行
われる。Subsequently, as shown in FIG. 3, when the other end of the wire 1 is bonded onto the bonding band 8 of the lead 7, ultrasonic energy is applied to the bonding portion of the wire 1, thereby bonding the wire 1 and the pad. 8 is then joined.

このとき、ワイヤ１０表面にＮｉ保護膜３が形成されて
いるので、きわめて良好なボンディング状態が作り出さ
れる。すなわち、ポンディングパッド８はＡＩやＮｉ層
により形成されている場合が多く、ワイヤ１の表面のＮ
ｉ保護膜３はこれらによくなじむので、接合性がきわめ
て良くなる。At this time, since the Ni protective film 3 is formed on the surface of the wire 10, an extremely good bonding state is created. That is, the bonding pad 8 is often formed of an AI or Ni layer, and the N on the surface of the wire 1 is
Since the i-protective film 3 blends well with these, the bonding properties are extremely good.

また、Ｎｉ保護膜３が形成されていない場合、Ａｌ２Ｏ
３膜が形成され、このＡｌ２Ｏ３膜は接合性を阻害する
ため、接合性が低下するが、Ｎｉ保護膜３で表面が被覆
されていると、このＡｔ２ｏ３Ｎ！ｉｔは形成されない
ので、接合性の低下は未然に防止される。Moreover, when the Ni protective film 3 is not formed, Al2O
3 film is formed, and this Al2O3 film inhibits the bonding property, so the bonding property decreases, but if the surface is covered with the Ni protective film 3, this At2o3N! Since it is not formed, a decrease in bonding properties is prevented.

［効果コ （１）０表面に酸化を防止する保護膜を被着することに
より、良好なボールを成形させることができるため、ポ
ンダビリティを向上させることができ、歩留りが向上で
きる。[Effects (1)0 By coating the surface with a protective film that prevents oxidation, a good ball can be formed, so that the poundability can be improved and the yield can be improved.

（２）、保護膜をＮｉで形成することにより、相手方バ
ンドによくなじませることができるため、接１合性を一
層高めることができる。(2) By forming the protective film with Ni, it can be made to blend well with the other band, so that bonding properties can be further improved.

以上本発明者によってなされた発明を実施例に基づき具
体的に説明したが、本発明は前記実施例に限定されるも
のではなく、その要旨を逸脱しない範囲で種々変更可能
であることはいうまでもない。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

たとえば、酸化防止保護膜はＮｉまたはその合金で形成
するに限らず、パラジウム（Ｐｄ）、亜鉛（Ｚｎ）、銅
（Ｃｕ）やこれらの合金等を使用することができる。For example, the anti-oxidation protective film is not limited to Ni or its alloy, but may also be made of palladium (Pd), zinc (Zn), copper (Cu), or alloys thereof.

［利用分野］ 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体装置に使用さ
れるボンディング技術に適用した場合について説明した
が、それに限定されるものではなく、たとえば、電子機
器に使用されるポンディング技術にも適用できる。[Field of Application] In the above explanation, the invention made by the present inventor was mainly applied to the bonding technology used in semiconductor devices, which is the field of application that formed the background of the invention, but the present invention is not limited thereto. , for example, can also be applied to bonding techniques used in electronic devices.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の一実施例を示す一部切断拡大正面図、 第２図および第３図はその作用を説明するための各一部
切断拡大ｉ面図である。 １・・・ボンディ−ング用ワイヤ、２・・・ＡＩワイヤ
、３・・・酸、化防止保護膜、４・・・ボール、５・・
・ペレット、６，８・・・ポンディングパッド、７・・
・リード。FIG. 1 is a partially cut-away enlarged front view showing one embodiment of the present invention, and FIGS. 2 and 3 are partially cut-away enlarged i-plane views for explaining its operation. DESCRIPTION OF SYMBOLS 1... Bonding wire, 2... AI wire, 3... Acid, anti-oxidation protective film, 4... Ball, 5...
・Pellet, 6, 8...Pounding pad, 7...
・Lead.

Claims (1)

【特許請求の範囲】 １、表面に酸化を防止する保護膜が被着されていること
を特徴とするボンディング用ワイヤ。 ２、保護膜がニッケルまたはその合金により構成されて
いることを特徴とする特許請求の範囲第１項記載のボン
ディング用ワイヤ。[Claims] 1. A bonding wire characterized in that a protective film for preventing oxidation is coated on the surface. 2. The bonding wire according to claim 1, wherein the protective film is made of nickel or an alloy thereof.
JP58204802A 1983-11-02 1983-11-02 Wire for bonding Pending JPS6097655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58204802A JPS6097655A (en) 1983-11-02 1983-11-02 Wire for bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58204802A JPS6097655A (en) 1983-11-02 1983-11-02 Wire for bonding

Publications (1)

Publication Number Publication Date
JPS6097655A true JPS6097655A (en) 1985-05-31

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP58204802A Pending JPS6097655A (en) 1983-11-02 1983-11-02 Wire for bonding

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JP (1) JPS6097655A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204620A (en) * 1987-02-11 1988-08-24 バウマー　エレクトリク　アクチエンゲゼルシャフト Method of forming connection between bonding wire and contact region in hybrid thick film circuit
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
JP2014082368A (en) * 2012-10-17 2014-05-08 Nippon Micrometal Corp Bonding wire
JP2020174156A (en) * 2019-04-12 2020-10-22 三菱電機株式会社 Semiconductor device and manufacturing method therefor
JP2021521650A (en) * 2018-01-15 2021-08-26 テキサス インスツルメンツ インコーポレイテッド Wire ball bonding of semiconductor devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204620A (en) * 1987-02-11 1988-08-24 バウマー　エレクトリク　アクチエンゲゼルシャフト Method of forming connection between bonding wire and contact region in hybrid thick film circuit
US6336269B1 (en) * 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6778406B2 (en) 1993-11-16 2004-08-17 Formfactor, Inc. Resilient contact structures for interconnecting electronic devices
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0792517A4 (en) * 1994-11-15 1998-06-24 Formfactor Inc Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
JP2014082368A (en) * 2012-10-17 2014-05-08 Nippon Micrometal Corp Bonding wire
JP2021521650A (en) * 2018-01-15 2021-08-26 テキサス インスツルメンツ インコーポレイテッド Wire ball bonding of semiconductor devices
JP2020174156A (en) * 2019-04-12 2020-10-22 三菱電機株式会社 Semiconductor device and manufacturing method therefor

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