JPS6095954A - Al wire for bonding semiconductor element - Google Patents

Al wire for bonding semiconductor element

Info

Publication number
JPS6095954A
JPS6095954A JP58203879A JP20387983A JPS6095954A JP S6095954 A JPS6095954 A JP S6095954A JP 58203879 A JP58203879 A JP 58203879A JP 20387983 A JP20387983 A JP 20387983A JP S6095954 A JPS6095954 A JP S6095954A
Authority
JP
Japan
Prior art keywords
bonding
wire
added
elements
tensile strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58203879A
Other languages
Japanese (ja)
Other versions
JPH0347579B2 (en
Inventor
Shozo Hayashi
林　正蔵
Shinji Shirakawa
白川　信次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP58203879A priority Critical patent/JPS6095954A/en
Publication of JPS6095954A publication Critical patent/JPS6095954A/en
Publication of JPH0347579B2 publication Critical patent/JPH0347579B2/ja
Granted legal-status Critical Current

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    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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Abstract

PURPOSE:To obtain an Al small-gage wire having excellent bonding properties by selecting the kinds and quantity of addition of elements to be added to Al having high purity. CONSTITUTION:0.5-2.0wt% Mg is added to Al having not less than 99.9% purity, and one kind or two kinds or more of elements of Pd, Pt, Rh, Ru, Os, Ir are further added by 0.01-1.0wt% in total. When the Al alloy is melted and casted, wire-drawn to form a small-gage wire having a 0.02-0.5mm.phi diameter and thermally treated (350 deg.C and 30min), and Al small-gage wire obtained has proper tensile strength and adhesive strength, and also has excellent corrosion resistance and uniform quality.

Description

【発明の詳細な説明】 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用するワイヤボンディング用の０
．０２〜０．５１１１１１φＡχ線に関づる。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a wire bonding method for connecting chip electrodes of semiconductor devices to substrates or lead frames.
．． 02~0.511111φAχ line.

一般にボンディング用線は線引き加工時およびボンディ
ング作業時における断線を防ぐために所定の引張り強度
を必要とするとともにボンディング時における高温軟化
を防止してボール形状の安定、ネック切れの防止、潰れ
１１Ｊの一定化及びボンディング後の接着強度（ボンデ
ィング強度）を維持することを要件とされ、また樹脂モ
ールドする場合のように腐食性雰■１気に線がさらされ
る場合には耐食性も重要な条件となる。In general, bonding wire requires a certain tensile strength to prevent wire breakage during wire drawing and bonding operations, and also prevents high temperature softening during bonding to stabilize the ball shape, prevent neck breakage, and maintain a constant collapse of 11J. It is also required to maintain the adhesive strength (bonding strength) after bonding, and corrosion resistance is also an important condition when the wire is exposed to a corrosive atmosphere 1 as in the case of resin molding.

しかるに高純度Ａ　は軟かづぎて所定の引張り強度が得
られないために、高純度へ　に各種の元素を添加するこ
とにより機械的強度を改善づることか考えられているが
、添加元素の種類、添加量によっては、所定の引張り強
度が得られず、引張り強度が得られたとしても硬りぎて
チップ割れの原因となったり、添加元素の偏析により引
張り強度、ボンディング強度が均一化せず、品質にバラ
ツキがでる結果となる。However, since high-purity A is too soft to achieve the desired tensile strength, it has been considered to improve the mechanical strength by adding various elements to high-purity A, but the types of added elements Depending on the amount added, the specified tensile strength may not be obtained, and even if tensile strength is obtained, it may become too hard and cause chip cracking, or the tensile strength and bonding strength may not be uniform due to segregation of the added elements. , resulting in variations in quality.

本発明は断る事情に鑑み案出されたもので、実験結果よ
り添加元素の秒類とその添加［１によってボンディング
性に優れ／ｊ　３Ｍ正な引張り強度及びボンディング弾
痕を確保りるどともに耐食性を改善し、しかも品質を均
一化するボンディング用ＡＲｆｌＡを提供ｔ！ｌυとり
るもので、斯る木°発明／ｌ線は、高純度／１（９９，
９％以上）に、０．５〜２．□ｗｔ％Ｍｇを含有させる
とともに白金族元素（Ｐｄ　、　Ｐｔ　、　Ｒｎ　、　
Ｒｕ　。The present invention was devised in view of the above circumstances, and experimental results show that the addition of additive elements [1] provides excellent bonding properties/j 3M, ensures positive tensile strength and bonding bullet holes, and improves corrosion resistance. We provide ARflA for bonding that improves and evens out quality! The invention of such wood/l line has high purity/1 (99,
9% or more), 0.5 to 2. □In addition to containing wt% Mg, platinum group elements (Pd, Pt, Rn,
Ru.

Ｏ３，Ｉｒ）より選択された少なくとも一元素を０．０
０１〜０．３ｗｔ％含有せしめたことを要旨とする。0.0 of at least one element selected from O3, Ir)
The gist is that the content is 01 to 0.3 wt%.

上記ＡＲは９９．９％以上の高純度のものを用い、マグ
ネシウム（Ｍ（１）はＡＲの引張り強度を高める。The above AR has a high purity of 99.9% or more, and magnesium (M(1)) increases the tensile strength of the AR.

白金族元素（Ｐｄ　、　ＰＬ　、　Ｒｎ　、　Ｒｕ　、
　Ｏｓ　。Platinum group elements (Pd, PL, Rn, Ru,
Os.

１１′）は、その添加によってＡ、２の引張り強度を高
めるとともに、耐食性の改善に商用である。11') is commercially available for increasing the tensile strength of A, 2 and improving corrosion resistance by adding it.

上記白金族元素はその一種又は二種以上を添加するが、
二°種以上を添加する場合でも含有（６）を０．００１
〜０．３ｗｔ％とする。One or more of the above platinum group elements are added,
Even when adding 2° or more, the content (6) is 0.001
~0.3wt%.

ＭｏがＱ、５ｗｔ％未満、白金族元素の一種又は二種以
上がＯ，００１ｗｔ％未満であっては所定の引張り強度
が得られず線引き加工が不可能であるとともに耐食性に
劣る。If Mo is less than Q, 5 wt % and one or more platinum group elements are less than O, 001 wt %, a predetermined tensile strength cannot be obtained, wire drawing is impossible, and corrosion resistance is poor.

とくに白金族元素が不足の場合は所定の耐食性が得られ
な−い。In particular, when platinum group elements are insufficient, the desired corrosion resistance cannot be obtained.

又、ＭＯが２．Ｑｗｔ％、白金族元素が０．３Ｗ【％を
越える場合は硬くなりすぎてもろくなり、チップ割れを
起したり、あるいは組成に偏析を生じて機械的強度がバ
ラ付いて品質の安定化を図れない。Also, MO is 2. Qwt%, platinum group elements exceeding 0.3W[%, it becomes too hard and brittle, leading to chip cracking, or composition segregation, resulting in variations in mechanical strength and quality stabilization. do not have.

以下に実施例を示す。Examples are shown below.

各試料はＡ１合金を溶解鋳造し、線引き加工により直径
０．０３１＋１１φの極細線ボンディング八Ｘ線とした
ものである。Each sample was made by melting and casting A1 alloy, and wire-drawing it into an ultra-fine bonding wire with a diameter of 0.031+11φ.

各試料の添加元素及び（の添加量は次表（１）に示す通
りであって、白金族元素として、１〕ｄ。The added elements and the added amount of (() in each sample are as shown in the following table (1), and as platinum group elements, 1]d.

Ｐｔ　、Ｒｎを添加した。試料Ｎ０．１５は何れの白金
族元素をも添加さＵない比較量である。Pt and Rn were added. Sample No. 15 is a comparative amount in which no platinum group elements are added.

尚、本発明において、残部に不可避なる不純物を含むも
のである。In the present invention, the remainder contains unavoidable impurities.

表（１） （添加ｍ単位ｗｔ％） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示す。Table (1) (Addition m unit wt%) Table (2) shows the results of measuring the mechanical properties and corrosion resistance of each of the above samples.

表（２） 試料Ｎ０．１１〜１４はボンディング強度が必要強度に
達しないとともに偏析が大きく同様の試料であってもボ
ンディング強度にバラツキがみられた。Table (2) Samples Nos. 11 to 14 had bonding strengths that did not reach the required strength and had large segregation, and even for similar samples, variations in bonding strength were observed.

尚、熱処理は３５０℃Ｘ３０分である。Note that the heat treatment was performed at 350° C. for 30 minutes.

又、耐食性は高温、高圧、高湿度下（１２０℃、２気圧
、湿度９０％以上、１００時間）における腐食の度合を
三ランクに区別し腐食度合いの大きいものから少ないも
のへ順に×、ｏ、Ｏとした。In addition, corrosion resistance is classified into three ranks based on the degree of corrosion under high temperature, high pressure, and high humidity (120°C, 2 atmospheres, humidity of 90% or more, 100 hours), and is ranked from highest to lowest: ×, o, It was set as O.

上記表（２）から知れるように、本発明実部品の範囲（
試料Ｎ０．１〜１０）にあって、熱処理優の硬さが適正
状態（２５〜５０ＶＨＮ）にあり、且つ引張り強度が確
保できるとともにボンディング強度が必要強度（３１１
以上）を確保され、しかも耐食性に優れることが確認で
きた。従って本発明実部品は線引き加工中に断線したり
、ボンディング作業中に断線を起したりづることがない
とともにチップ割れを防ぎ、しかも品質を高品質安定に
維持することができ、ポールボンディング熱圧着法、超
音波接合法の何れに使用してもボンディング特性大なる
ＡＲ線を提供し得る。As can be seen from Table (2) above, the scope of the actual parts of the present invention (
For samples No. 1 to 10), the hardness of the heat treated material is in the appropriate state (25 to 50 VHN), the tensile strength is ensured, and the bonding strength is the required strength (311 VHN).
It was confirmed that the above) was ensured, and that it also had excellent corrosion resistance. Therefore, the actual parts of the present invention do not break during the wire drawing process or break during the bonding process, prevent chip cracking, and maintain high quality and stable quality. It is possible to provide an AR wire with excellent bonding properties whether it is used in any of the bonding methods and the ultrasonic bonding method.

１、事件の表示 昭和５８年特許願第２０３８７９号 ２、発明の名称 半導体素子のボンディング用ＡＩ２．線氏名（名称）　
田中電子工業株式会社 ５、補正命令の日付（自発補正） 昭和　年　月　日 補　正　明　ｌ！１　口 １、発明の名称 半導体素子のボンディング用ＡＪ線 ２、特許請求の範囲 高純度ＡＵに、０．５〜２．．０ｗｔ％の７グネシウム
（Ｍｉｌｌ　）を含有させるとともに白金族元素（Ｐｄ
、Ｐｔ、Ｒｈ、Ｒｕ、Ｏｓ、　Ｉｒ＞より選択された少
くとも一元素を０．００１〜０．３ｗｔ％含右せしめた
半導体素子のボンディング用ＡＪ線。1. Indication of the case 1982 Patent Application No. 203879 2. Name of the invention AI for bonding of semiconductor devices 2. Line name (name)
Tanaka Electronics Industry Co., Ltd. 5, Date of amendment order (voluntary amendment) Showa year, month, day correction, Akira l! 1. Name of the invention: AJ wire for bonding semiconductor devices 2. Claims: High purity AU, 0.5 to 2. ．． Contains 0 wt% of 7gnesium (Mill) and platinum group element (Pd).
, Pt, Rh, Ru, Os, Ir> AJ wire for bonding semiconductor devices containing 0.001 to 0.3 wt% of at least one element selected from

３、発明の詳細な説明 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用するワイヤボンディング用の０
．０２〜Ｏ，，５＋ｕφＡＪ線に関する。3. Detailed Description of the Invention The present invention provides a wire bonding method for connecting chip electrodes of semiconductor devices to substrates or lead frames.
．． Regarding the 02~O,,5+uφAJ line.

一般にボンディング用線は線引き加工時およびボンディ
ング作業時にお藝）る断線を防ぐために所定の引張り強
度を必要とするとともにボンディング時における高温軟
化を防止してボール形状の安定、ネック切れの防止、澗
れ１Ｊの一定化及びボンディング後の接着強度（ボンデ
ィング強度）を維持することを要ｆ１とされ、また樹脂
モールドする場合のように腐食性雰囲気に線がさらされ
る場合には耐食性も重要な条件となる。In general, wire for bonding requires a certain tensile strength to prevent wire breakage during drawing and bonding operations, and also to prevent softening at high temperatures during bonding to stabilize the ball shape, prevent neck breakage, and prevent sagging. It is necessary to maintain a constant 1J and adhesive strength after bonding (bonding strength), and corrosion resistance is also an important condition when the wire is exposed to a corrosive atmosphere such as when molded with resin. .

しかるに高純＊ＡＪは軟かすぎて所定の引張り強度が得
られな（＼ために、高純度ＡＪに各種の元素を添加する
ことにより機械的強度を改善することが考えられている
が、添加元素の種類、添加量によっては、所定の引張り
強度が得られず、引張り強度が得られたとしても硬１ぎ
てチップ割れの原因となったり、添加元素の偏析により
引張り強度、ボンディング強度が均一化せず、品質にバ
ラツキがでる結果となる。However, high-purity AJ is too soft and cannot achieve the desired tensile strength (\) Therefore, it has been considered to improve the mechanical strength by adding various elements to high-purity AJ; Depending on the type and amount of elements added, the specified tensile strength may not be obtained, and even if tensile strength is obtained, it may become too hard and cause chip cracking, or the tensile strength and bonding strength may be uniform due to segregation of the added elements. This results in variations in quality.

本発明は断る事情に鑑み案出されたもので、実験結果よ
り添加元素の種類とその添加…によってボンディング性
に優れた適正な引張り強度及びボンディング強度を確保
するとともに耐食性を改善し、しかも品質を均一化する
ボンディング用Ａｊｌｌを提供Ｕんとづるもので、断る
木発明ＡＪ線は、高純度ＡＪ　（９９，９％以上）に、
０．５〜２．０ｗｔ％ＭＵを含有させるとともに白金族
元素（Ｐｄ、Ｐｔ、Ｒ１１，ＲＬＩ。The present invention was devised in view of the circumstances of refusal, and experimental results show that the types of additive elements and their addition... ensure appropriate tensile strength and bonding strength with excellent bonding properties, improve corrosion resistance, and improve quality. The wood-invented AJ line, which provides uniform bonding AJll, is a high-purity AJ (over 99.9%).
It contains 0.5 to 2.0 wt% MU and platinum group elements (Pd, Pt, R11, RLI.

Ｏ８，Ｉｒ）より選択された少なくとも一元素を０．０
０１〜０．３ｗｔ％含有せしめたことを要旨とする。0.0 of at least one element selected from O8, Ir)
The gist is that the content is 01 to 0.3 wt%.

上記ＡＵは９９．９％以上の高純度のものを用い、マグ
ネシウム（Ｍ（１）はＡＵの引張り強度を高める。The above AU has a high purity of 99.9% or more, and magnesium (M(1)) increases the tensile strength of the AU.

白金族元素（Ｐｄ　、　Ｐｔ　、　Ｒｈ　、　Ｒｕ　、
　Ｏｓ　。Platinum group elements (Pd, Pt, Rh, Ru,
Os.

Ｉｒ）は、その添加によってＡＪの引張り強度を高める
とともに、耐食性の改善に有用である。Addition of Ir) increases the tensile strength of AJ and is useful for improving corrosion resistance.

上記白金族元素はその一種又は二種以上を添加づるが、
二種以上を添加する場合でも含有量を０．００１〜０．
３ｗｔ％とする。One or more of the above platinum group elements may be added,
Even if two or more types are added, the content should be 0.001 to 0.
It is set to 3wt%.

ＭＯがｏ、５ｗｔ％未満、白金族元素の一種又は二種以
上が０．００１ｗｔ％未満であっては所定の引張り強度
が得られず線引き加工が不可能であるとともに耐食性に
劣る。If the MO content is less than 5 wt% and the content of one or more platinum group elements is less than 0.001 wt%, a predetermined tensile strength cannot be obtained, wire drawing is impossible, and the corrosion resistance is poor.

とくに白金族元素が不足の場合は所定の耐食性が得られ
ない。In particular, when platinum group elements are insufficient, the desired corrosion resistance cannot be obtained.

又、Ｍｇが２．０ｗｔ％、白金族元素が０．３ｗｔ％を
越える場合は硬くなりすぎてもろくなり、チップ割れを
起しｂ勺、あるいは組成に偏析を生じて機械的強度がバ
ラ付いて品質の安定化を図れない。Furthermore, if the Mg content exceeds 2.0 wt% and the platinum group element content exceeds 0.3 wt%, it becomes too hard and brittle, leading to chip cracking, cracking, or composition segregation, resulting in variations in mechanical strength. Unable to stabilize quality.

以下に実施例を示す。。Examples are shown below. .

各試料はＡ４合金を溶解紡造し、線引き加工により直径
ｏ、ｏ３ｍｍφの極細線ボンディングＡＪ線としたもの
である。Each sample was made by melt-spinning A4 alloy and drawing it into an ultra-fine bonding AJ wire with a diameter of o and o3 mm.

各試料の添加元素及びその添加量は次表（１）に示す通
りであって、白金族元素として、Ｐｄ。The additive elements and their additive amounts for each sample are as shown in the following table (1), and Pd is the platinum group element.

Ｐｔ　、Ｒｈを添加した。試料Ｎ０．１５は何れの白金
族元素をも添加させない比較量である。Pt and Rh were added. Sample No. 15 is a comparative amount in which no platinum group element is added.

尚、本発明において、残部に不可避なる不純物を含むも
のである。In the present invention, the remainder contains unavoidable impurities.

表（１） （添加ｍ単位ｗｔ％） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示づ。Table (1) (Addition m unit wt%) Table (2) shows the results of measuring the mechanical properties and corrosion resistance of each of the above samples.

表（２） 試料Ｎ０．１１〜１４Ｇ！ボンディング強度が必要強度
に達しないとともに偏析が大きく同種の試料であってｂ
ボンディング強度にバラツキがみられた。Table (2) Sample No. 11-14G! The bonding strength does not reach the required strength and the segregation is large and the samples are of the same type.
There were variations in bonding strength.

尚、熱処理は３５０℃×３０分である。Note that the heat treatment was performed at 350° C. for 30 minutes.

又、耐食性は高温、高圧、高湿度下（１２０℃、２気圧
、湿度９０％以上、１００時間）における腐食の度合を
三ランクに区別し腐食度合いの大きいものから少ないも
のへ順に×、０１◎とした。In addition, corrosion resistance is classified into three ranks based on the degree of corrosion under high temperature, high pressure, and high humidity (120°C, 2 atmospheres, humidity of 90% or more, 100 hours), and is ranked from highest to lowest: ×, 01◎ And so.

上記表（２）から知れるように、本発明実施品の範囲（
試料Ｎｏ、１〜１０）にあって、熱処理後の硬さが適正
状態（２５〜５０　Ｖ　ＬＩ　Ｎ　）にあり、且つ引張
り強度が確保できるとともにボンディング弾痕が必要強
直（３（１以上）を確保され、しかも耐食性に優れるこ
とが確認できた。従って本発明実施品は線引き加工中に
断線したり、ボンディング作業中に断線を起したり°す
ることがないとともにチップ割れを防ぎ、しかも品質を
ｎ品質安定に維持することができ、ポールボンディング
熱圧着法、超音波接合法の何れに使用してもボンディン
グ特竹大なるΔＪ線を提供し得る。As can be seen from Table (2) above, the scope of the products implementing the present invention (
For sample No. 1 to 10), the hardness after heat treatment is in an appropriate state (25 to 50 V LIN Moreover, it was confirmed that the product implemented according to the present invention does not break during wire drawing or bonding, prevents chip cracking, and improves quality. The quality can be maintained stably, and a special bonding ΔJ line can be provided whether it is used in either the pole bonding thermocompression bonding method or the ultrasonic bonding method.

Claims (1)

【特許請求の範囲】[Claims] 高Ｎ度ＡＲに、０．５〜２．０ｗ１％のマグネシウム（
Ｍ（１）を含有させるとともに白金族元素（Ｐｄ　、　
Ｐｔ　、　Ｒｎ　、　Ｒｕ　、　Ｏｓ　、　Ｉ　ｒ　）
より選択された少くとも一元素を０．００１〜０．３ｗ
ｔ％含有せしめた半導体素子のボンディング用Ａ、２線
。0.5-2.0w1% magnesium (
In addition to containing M(1), platinum group elements (Pd,
Pt, Rn, Ru, Os, Ir)
At least one element selected from 0.001 to 0.3w
A, 2 wires for bonding semiconductor elements containing t%.
JP58203879A 1983-10-31 1983-10-31 Al wire for bonding semiconductor element Granted JPS6095954A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203879A JPS6095954A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203879A JPS6095954A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Publications (2)

Publication Number Publication Date
JPS6095954A true JPS6095954A (en) 1985-05-29
JPH0347579B2 JPH0347579B2 (en) 1991-07-19

Family

ID=16481225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203879A Granted JPS6095954A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Country Status (1)

Country Link
JP (1) JPS6095954A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198851A (en) * 1984-03-23 1985-10-08 Hitachi Ltd High corrosion resistant high hardness aluminum alloy wire for semiconductor
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60198851A (en) * 1984-03-23 1985-10-08 Hitachi Ltd High corrosion resistant high hardness aluminum alloy wire for semiconductor
JPH0412621B2 (en) * 1984-03-23 1992-03-05 Hitachi Ltd
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate

Also Published As

Publication number Publication date
JPH0347579B2 (en) 1991-07-19

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