JPS6095949A - Al wire for bonding semiconductor element - Google Patents

Al wire for bonding semiconductor element

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Publication number
JPS6095949A
JPS6095949A JP58203874A JP20387483A JPS6095949A JP S6095949 A JPS6095949 A JP S6095949A JP 58203874 A JP58203874 A JP 58203874A JP 20387483 A JP20387483 A JP 20387483A JP S6095949 A JPS6095949 A JP S6095949A
Authority
JP
Japan
Prior art keywords
bonding
wire
strength
added
tensile strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58203874A
Other languages
Japanese (ja)
Inventor
Shozo Hayashi
林　正蔵
Shinji Shirakawa
白川　信次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
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Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP58203874A priority Critical patent/JPS6095949A/en
Publication of JPS6095949A publication Critical patent/JPS6095949A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain an Al small-gage wire having excellent joining properties by selecting the kinds and quantity of addition of elements added to Al having high purity. CONSTITUTION:0.2-1.0wt% Si and 0.2-1.5wt% Mg are added to Al having not less than 99,9% purity while one kind or two kinds or more of elements of Pd, Pt, Rh, Ru, Os, Ir are added by 0.001-0.3wt% in total. When the Al alloy is melted and casted, wire-drawn to form an Al wire having a 0.02-0.5mm.phi diameter and thermally treated (350 deg.C and 30min), a small-gage wire obtained has proper tensile strength and adhesive strength, and also has excellent corrosion resistance and uniform quality.

Description

【発明の詳細な説明】 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用するワイヤボンディング用の０
．０２〜０．５Ｉ１ｍφ／１線に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a wire bonding method for connecting chip electrodes of semiconductor devices to substrates or lead frames.
．． Regarding 02 to 0.5I1mφ/1 line.

一般にボンディング用線は線引き加工ｖＩおよびボンデ
ィング作業時における断線を防ぐために所定の引張り強
度を必要とするとともにボンデインη時における高追紗
４）−を論１ト１７τボール形状の安定、ネック切れの
防止、潰れ１１］の一定化及びボンディング後の接着強
度（ボンディング強度）を維持することを要件とされ、
また樹脂モールドする場合のように腐食性雰囲気に線が
さらされる場合には耐食性も重要な条件となる。In general, bonding wires require a certain tensile strength to prevent wire breakage during the drawing process and bonding work, and also require a high tensile strength during bonding η to stabilize the ball shape and prevent neck breakage. , crushing 11] and maintaining the adhesive strength after bonding (bonding strength),
Corrosion resistance is also an important condition when the wire is exposed to a corrosive atmosphere, such as when molded with resin.

しかるに高純度へχは軟かづぎて所定の引張り強度が得
られないために、高純度ＡＲに各種の元素を添加づるこ
とにより機械的強度を改善することが考えられているが
、添加元素の種類添加量によっては、所定の引張り強度
が得られず、引張り強度が得られたとしても硬づ゛ぎて
チップ割れの原因となったり、添加元素の偏析により引
張り強度、ボンディング強度が均一化せず、品質にバラ
ツキがでる結末となる。However, when achieving high purity, χ remains soft and the desired tensile strength cannot be obtained, so it has been considered to improve the mechanical strength by adding various elements to high purity AR. Depending on the type and amount added, the specified tensile strength may not be obtained, and even if tensile strength is obtained, it may be too hard and cause chip cracking, or the tensile strength and bonding strength may not be uniform due to segregation of the added elements. This results in variations in quality.

本発明は断る事情に鑑み案出されたちのＣ１実験結果よ
り添加元素の種類とその添加ｍにＪ：ってボンディング
性に優れた適正な引張り強度及びボンディング強度を確
保覆るとともに耐食性を改善し、しかも品質を均一化づ
るボンディング用Ａλ線を提供せんとするもので、断る
本発明ＡＲ線は、高純度ＡＲ（９９，９％以上）に、Ｏ
，、２〜１．０ｗｔ％３ｉ及び０．２〜１．５ｗｔ％Ｍ
ｏを含有させるとともに白金族元素（Ｐｄ、Ｐｔ、Ｒｎ
、Ｒｕ、Ｏ３，Ｉｒ）より選択された少なくとも一元素
を０．００１〜０．３ｗｔ％含有せしめたことを要旨と
する。The present invention was devised in view of the above circumstances, and based on the results of the C1 experiment, the type of additive element and its addition m ensure appropriate tensile strength and bonding strength with excellent bonding properties, and improve corrosion resistance. Moreover, we aim to provide an Aλ beam for bonding with uniform quality.
, 2-1.0wt%3i and 0.2-1.5wt%M
o and platinum group elements (Pd, Pt, Rn
, Ru, O3, Ir) in an amount of 0.001 to 0.3 wt%.

上記へχは９９５９％以上の高純度のものを用い、シリ
コン（Ｓｉ　）及びマグネシウム（Ｍｇ）は／ｌの引張
り強度を高める。In the above, χ is of high purity of 9959% or more, and silicon (Si) and magnesium (Mg) increase the tensile strength of /l.

白金族元素（Ｐｄ　、　Ｐｔ　、　Ｒｎ　、　Ｒｕ　、
　Ｏｓ　。Platinum group elements (Pd, Pt, Rn, Ru,
Os.

Ｉｒ）は、その添加によってＡＲの引張り強度を高める
とともに、耐食性の改善に有用である。Addition of Ir) increases the tensile strength of AR and is useful for improving corrosion resistance.

上記白金族元素はその一種又は二種以上を添加づるが、
二種以上を添加する場合でも含有量を０．００１〜０．
３ｗｔ％と覆る。One or more of the above platinum group elements may be added,
Even if two or more types are added, the content should be 0.001 to 0.
3wt%.

Ｓｔ及びＭａが０．２ｗｔ％未満、白金族元素の一種又
は二種以上が０．００１ｗｔ％未満であっては所定の引
張り強度が得られず線引き加工が不可能であるとともに
耐食性に劣る。If St and Ma are less than 0.2 wt% and one or more platinum group elements are less than 0.001 wt%, a predetermined tensile strength cannot be obtained, wire drawing is impossible, and corrosion resistance is poor.

とくに白金族元素が不足の場合は所定の耐食性が得られ
ない。In particular, when platinum group elements are insufficient, the desired corrosion resistance cannot be obtained.

又、３ｉが１．０ｗｔ％、Ｍ（ｌが１．５ｗｔ％、白金
族元素がＱ、３ｗｔ％を越える場合は硬くなりすぎても
ろくなり、チップ割れを起したり、あるいは組成に偏析
を生じて機械的強度がバラ付いて品質の安定化を図れな
い。In addition, if 3i exceeds 1.0 wt%, M (l) exceeds 1.5 wt%, and platinum group element exceeds 3 wt%, it becomes too hard and brittle, leading to chip cracking or segregation in the composition. mechanical strength varies, making it impossible to stabilize quality.

以下に実施例を示す。Examples are shown below.

各試料はＡ１合金を溶解ｖＪ造し、線引き加工により直
径ｏ、ｏ３ｍｍφの極細線ボンディングＡχ線としたも
のである。Each sample was made by melting A1 alloy and forming it into an ultrafine bonding Aχ wire with a diameter of o and o3 mmφ by wire drawing.

各試料の添加元素及び子の添加量は次表（１）に示す通
りであって、白金族元素としてＰｄ。The additive elements and the additive amounts of each sample are as shown in the following table (1), and Pd is the platinum group element.

ｐｔ　、　Ｒｎを添加した。試料ＮＯ，１５は何れの白
金族元素をも添加させない比較量である。pt, Rn were added. Sample No. 15 is a comparative amount in which no platinum group element is added.

尚、本発明において、残部に不可避なる不純物を含むも
のである。In the present invention, the remainder contains unavoidable impurities.

表（１） （添加量単位Ｗ【％） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示す。Table (1) (Additional amount unit: W [%)] Table (2) shows the results of measuring the mechanical properties and corrosion resistance of each of the above samples.

表（２） 試料ＮＯ，’＋１〜１４はボンディング強石が必要強度
に達しないととｂに偏析が大ぎく同徒の試料であっても
ボンディング強度にバラツキがみられた。Table (2) For samples No. 1 to 14, the bonding strength did not reach the required strength, and the bonding strength was found to vary even if the bonding strength was large and the segregation was large in b.

尚、熱処理は３５０℃×３０分である。Note that the heat treatment was performed at 350° C. for 30 minutes.

又、耐食性は高温、高圧、高湿度下（１２０℃、２気圧
、湿度９０％以上、１００時間）にお＋ｉる腐食の度合
を三ランクに区別し腐食度合いの大きいものから少ない
ものへ順にＸ、Ｑ。In addition, corrosion resistance is classified into three ranks based on the degree of corrosion under high temperature, high pressure, and high humidity (120°C, 2 atmospheres, humidity of 90% or more, 100 hours), and is ranked from the highest degree of corrosion to the lowest degree of corrosion. ,Q.

◎とじた。◎ Closed.

上記表（２）から知れるように、本発明実施品の範囲（
試料Ｎｏ、１〜１０）にあって、熱処理慢の硬さが適正
状態（２５〜５０ＶＨＮ）にあり、且つ引張り強度が確
保できるとともにボンディング強度が必要強度（３（１
以上）を確保され、しかも耐食性に優れることが確認で
きた。従って本発明実施品は線引き加工中に断線したり
、ボンディング作業中に断線を起したつづることがない
とともにチップ割れを防ぎ、しかも品質を高品質安定に
維持づることができ、ポールボンディング熱圧着法、超
音波接合法の何れに使用してもボンディング特性大なる
Ａλ線を提供し得る。As can be seen from Table (2) above, the scope of the products implementing the present invention (
Sample Nos. 1 to 10) have appropriate hardness (25 to 50 VHN) after heat treatment, and are able to secure tensile strength and bonding strength to the required strength (3 (1 to 10 VHN)).
It was confirmed that the above) was ensured, and that it also had excellent corrosion resistance. Therefore, the product of the present invention does not cause wire breakage during wire drawing or wire breakage during bonding work, prevents chip cracking, and maintains high quality and stable quality using the pole bonding thermocompression bonding method. It is possible to provide Aλ rays with excellent bonding properties even when used in any of the ultrasonic bonding methods.

（特許庁審査官　殿） １゜事件の表示 昭和５８年特許願第２０３８７４号 ２、発明の名称 半導体素子のボンディング用Ａ１線 ３、補正をする者 事件との関係　特　許　出　願人 氏名（名称）　田中電子工業株式会社 ４、代理人 ５、補正命令の日イリ（自発補正） 昭和　年　月　日 補　正　明　細　書 １、発明の名称 半導体素子のボンディング用Ａ、ｆ線 ２、特許請求の範囲 高純度Ａｊに、０．２〜１．０ｗｔ％のシリコン（Ｓｌ
）及び０．２〜１．５ｗｔ％のマグネシウム（Ｍｇ）を
含有させるとともに白金族元素（Ｐｄ、Ｐｔ、Ｒｈ、Ｒ
ｕ、Ｏｓ、Ｉｒ）より選択された少くとも一元素を０．
００１〜０．３ｗｔ％含有せしめた半導体素子のボンデ
ィング用ＡＪ線。(To the Patent Office Examiner) 1゜Indication of the case Patent Application No. 203874 of 1983 2, Name of the invention A1 line 3 for bonding of semiconductor elements, Relationship with the case of the person making the amendment Patent Name of applicant (Name) ) Tanaka Electronics Co., Ltd. 4, Agent 5, Amended order (voluntary amendment) Date amended in 1927 Description 1, Title of invention A for bonding of semiconductor devices, f-line 2, Scope of claims 0.2 to 1.0 wt% silicon (Sl) is added to high purity Aj.
) and 0.2 to 1.5 wt% magnesium (Mg) and platinum group elements (Pd, Pt, Rh, R
At least one element selected from u, Os, Ir) is added to 0.
An AJ wire for bonding semiconductor devices containing 001 to 0.3 wt%.

３、発明の詳細な説明 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用づるワイヤボンディング用の０
．０２〜Ｑ、５ｍｍφＡＪ線に関する。3. Detailed Description of the Invention The present invention relates to a wire bonding method for connecting chip electrodes of semiconductor devices to substrates or lead frames.
．． 02-Q, regarding 5mmφAJ line.

一般にボンディング用線は線引き加工時およびボンディ
ング作業時にお番ノる断線を防ぐために所定の引張り強
度を必要とするとともにボンディング時における高温軟
化を防止してボール形状の安定、ネック切れの防止、潰
れ巾の一定化及びボンディング後の接着強度（ボンディ
ング強度）を維持することを要件とされ、また樹脂モー
ルドする場合のように腐食性雰囲気に線がさらされる場
合には耐食性も重要な条件とｔ【る。In general, wire for bonding requires a certain tensile strength to prevent wire breakage during wire drawing and bonding work, and also to prevent softening at high temperatures during bonding, stabilize the ball shape, prevent neck breakage, and reduce the width of collapse. It is necessary to maintain a constant adhesive strength (bonding strength) after bonding, and corrosion resistance is also an important condition when the wire is exposed to a corrosive atmosphere such as when molded with resin. .

しかるに高純度Δノは軟かすぎて所定の引張り強度が得
られないために、高純度ＡＪに台秤の元素を添加するこ
とにより機械的強度を改善することが考えられているが
、添加元素の種類、添加量によっては、所定の引張り強
度が得られず、引張り強度が得られたとしても硬ずぎて
チップ割れの原因となったり、添加元素の偏析により引
張り強度、ボンディング強度が均一化せず、品質にバラ
ツキがでる結果となる。However, high-purity Δ is too soft to achieve the desired tensile strength, so it has been considered to improve the mechanical strength by adding platform balance elements to high-purity AJ. Depending on the type and amount added, the specified tensile strength may not be obtained, and even if tensile strength is obtained, it may be too hard and cause chip cracking, or the tensile strength and bonding strength may not be uniform due to segregation of the added elements. This results in variations in quality.

本発明は断る事情に鑑み案出されたもので、実験結果よ
り添加元素の種類とその添加量によってボンディング性
に優れた適正な引張り強度及びボンディング強度を確保
りるとともに耐食性を改善し、しかも品質を均一化する
ボンディング用Ａ！線を提供せんとするもので、断る本
発明ＡＵ線は、高純度Ａｊ　（９９，９％以上）に、０
．２〜１．Ｑｗｔ％３ｉ及び０．２〜１．５ｗｔ％Ｍｇ
を含有させるとともに白金族元素（Ｐｄ、Ｐｔ、Ｒｈ、
Ｒｕ、Ｏｓ、　Ｌｒ）より選択された少なくとも一元素
を０．００１〜Ｑ、３ｗｔ％含有せしめたことを要旨と
づる。The present invention was devised in view of the circumstances of refusal, and experimental results show that the type and amount of added elements ensure proper tensile strength and bonding strength with excellent bonding properties, improve corrosion resistance, and improve quality. A for bonding to make it uniform! The AU wire of the present invention has a high purity Aj (99.9% or more) and 0
．． 2-1. Qwt%3i and 0.2-1.5wt%Mg
and platinum group elements (Pd, Pt, Rh,
The summary is that at least one element selected from Ru, Os, Lr) is contained in an amount of 0.001 to Q, 3 wt%.

上記ＡＪは９９．９％以上の高純度のものを用い、シリ
コン（Ｓｉ）及びマグネシウム（Ｍｌｌ　）はＡＵの引
張り強度を高める。The above AJ is of high purity of 99.9% or more, and silicon (Si) and magnesium (Mll) increase the tensile strength of AU.

白金族元素（Ｐｄ　、　Ｐｔ　、　Ｒｈ　、　Ｒｕ　、
　Ｏｓ　。Platinum group elements (Pd, Pt, Rh, Ru,
Os.

Ｉｒ）は、その添加によって△Ｊの引張り強度を高める
とともに、耐食性の改善に有用である。Addition of Ir) increases the tensile strength of ΔJ and is useful for improving corrosion resistance.

上記白金族元素はその一種又は二種以上を添加するが、
二種以上を添加する場合でも含有量をｏ、ｏｏｉ〜Ｑ、
３ｗｔ％とする。One or more of the above platinum group elements are added,
Even when adding two or more types, the content should be o, ooi~Q,
It is set to 3wt%.

Ｓｉ及びＭｇが０．２ｗｔ％未満、白金族元素の一種又
は二種以上が０．００１ｗｔ％未満であっては所定の引
張り強度が得られず線引き加工が不可能であるとともに
耐食性に劣る。If Si and Mg are less than 0.2 wt% and one or more platinum group elements are less than 0.001 wt%, a predetermined tensile strength cannot be obtained, wire drawing is impossible, and corrosion resistance is poor.

とくに白金族元素が不足の場合は所定の耐食性が得られ
ない。In particular, when platinum group elements are insufficient, the desired corrosion resistance cannot be obtained.

又、３ｉが１．０ｗｔ％、ＭＯが１．５ｗｔ％、白金族
元素が０．３ｗｔ％を越える場合は硬くなりすぎてもろ
くなり、チップ割れを起したり、あるいは組成に偏析を
生じて機械的強度がバラ付いて品質の安定化を図れない
。In addition, if 3i exceeds 1.0 wt%, MO exceeds 1.5 wt%, and platinum group elements exceed 0.3 wt%, it becomes too hard and brittle, leading to chip cracking or segregation in the composition, which may cause mechanical failure. The quality of the product cannot be stabilized due to variations in the strength of the product.

以下に実施例を示す。Examples are shown below.

各試料はＡ１合金を溶解鋳造し、線引き加工により直径
０．０３ｍｍφの極細線ボンディング強度線としたちの
である。Each sample was made by melting and casting A1 alloy and drawing it into an ultrafine bonding strength wire with a diameter of 0.03 mm.

各試料の添加元素及びその添加量は次表（１）に示１通
りであって、白金族元素としてＰｄ。The additive elements and their additive amounts for each sample are shown in the following table (1), and Pd is the platinum group element.

Ｐｔ　、Ｒｈを添加した。試料Ｎ０．１５は何れの白金
族元素をも添加させない比較量である。Pt and Rh were added. Sample No. 15 is a comparative amount in which no platinum group element is added.

尚、本発明において、残部に不可避なる不純物を含むも
のである。In the present invention, the remainder contains unavoidable impurities.

表（１） （添加量単位ｗｔ％） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示す。Table (1) (Addition amount unit: wt%) Table (2) shows the results of measuring the mechanical properties and corrosion resistance of each of the above samples.

表（２） 試料Ｎ０．１１〜１４はボンディング強度が必要強度に
達しないとともに偏析が大きく同種の試料であってもボ
ンディング強度にバラツキがみられた。Table (2) Samples Nos. 11 to 14 had bonding strengths that did not reach the required strength and had large segregation, and even among samples of the same type, variations in bonding strength were observed.

尚、熱処理は３５０℃×３０分である。Note that the heat treatment was performed at 350° C. for 30 minutes.

又、耐食性は高温、高圧、高湿度下（１２０℃、２気圧
、湿度９０％以上、１００時間）における腐食の度合を
三ランクに区別し腐食度合いの大きいものから少ないも
のへ順に×、０、Ｏとした。In addition, corrosion resistance is classified into three ranks according to the degree of corrosion under high temperature, high pressure, and high humidity (120°C, 2 atmospheres, humidity of 90% or more, 100 hours), and ranks from the highest degree of corrosion to the lowest: ×, 0, It was set as O.

上記表（２）から知れるように、本発明実施量の範囲（
試料Ｎ００１〜１０）にあって、熱処理後の硬さが適正
状態（２５〜５０　Ｖ　ｌ−Ｉ　Ｎ　）にあり、且つ引
張り強度が確保できるとともにボンディング強度が必要
強度（３０以上）を確保され、しかも耐食性に優れるこ
とが確認できた。従って本発明実施量は線引き加工中に
断線したり、ボンディング作業中に断線を起したりする
ことがないとともにチップ割れを防ぎ、しかも品質を高
品質安定に維持することができ、ポールボンディング熱
圧着法、超合波接合法の何れに使用してもボンディング
特性人なるＡＪ線を提供し得る。As can be seen from Table (2) above, the range of the amount of the present invention implemented (
In samples N001 to 10), the hardness after heat treatment is in an appropriate state (25 to 50 V l-I N ), and the tensile strength is ensured, and the bonding strength is the required strength (30 or more), Moreover, it was confirmed that it has excellent corrosion resistance. Therefore, the embodiment of the present invention does not cause wire breakage during wire drawing or bonding work, prevents chip cracking, and maintains high quality and stable quality. It is possible to provide an AJ wire with good bonding characteristics regardless of whether it is used in a bonding method or a super-combination bonding method.

Claims (1)

【特許請求の範囲】[Claims] 高純度ＡＲに、０．２〜１．ＯＴ！Ｉｔ％のシリコン（
Ｓｔ　）及び０．２〜１，５ｗｔ％のマグネシウム（Ｍ
Ｏ）を含有させるとともに白金族元素（Ｐｄ、Ｐｔ、Ｒ
ｎ、Ｒｕ、Ｏｓ、Ｉｒ）より選択された少くとも一元素
を０．００１〜Ｑ、３ｗｔ％含有せしめた半導体素子の
ボンディング用Δλ線。For high purity AR, 0.2 to 1. OT! It% silicon (
St) and 0.2-1,5 wt% magnesium (M
O) and platinum group elements (Pd, Pt, R
A Δλ line for bonding a semiconductor device containing 0.001 to Q, 3 wt% of at least one element selected from n, Ru, Os, Ir).
JP58203874A 1983-10-31 1983-10-31 Al wire for bonding semiconductor element Pending JPS6095949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203874A JPS6095949A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203874A JPS6095949A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Publications (1)

Publication Number Publication Date
JPS6095949A true JPS6095949A (en) 1985-05-29

Family

ID=16481140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203874A Pending JPS6095949A (en) 1983-10-31 1983-10-31 Al wire for bonding semiconductor element

Country Status (1)

Country Link
JP (1) JPS6095949A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498909A (en) * 1989-07-01 1996-03-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing such semiconductor device
US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
US5744377A (en) * 1987-10-08 1998-04-28 Anelva Corporation Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
US5498909A (en) * 1989-07-01 1996-03-12 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing such semiconductor device

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