JPS6087500A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6087500A
JPS6087500A JP58194895A JP19489583A JPS6087500A JP S6087500 A JPS6087500 A JP S6087500A JP 58194895 A JP58194895 A JP 58194895A JP 19489583 A JP19489583 A JP 19489583A JP S6087500 A JPS6087500 A JP S6087500A
Authority
JP
Japan
Prior art keywords
circuit
internal timing
integrated circuit
mode
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58194895A
Other languages
Japanese (ja)
Inventor
Hiroaki Ikeda
博明 池田
Masahiro Watanabe
正博 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58194895A priority Critical patent/JPS6087500A/en
Publication of JPS6087500A publication Critical patent/JPS6087500A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To enable to precisely and easily test of an internal timing and control the evaluation on a mass production line of the internal timing by measuring the timing of the internal timing signal occurrence circuit from an external terminal only with the tester. CONSTITUTION:The internal timing signal occurrence circuits 1-6 generate the internal timing by delaying a signal supplied from an external part to an input terminal 40. A mode decision circuit 20 decides whether an operation mode of a memory integrated circuit is an ordinary operation mode or a measurement mode, in response to the signal supplied from the external part through a input terminal 41. When the mode decision circuit 20 decides the ordinary operation mode, logical ''0'' is outputted and all try state gates 31-36 are inactivated. When the memory integrated circuit is to be tested, the input signal is supplied from the external part to the input terminal 41 so that the mode decision circuit 20 can decide a measurement mode and output logical ''1,'' all try state gates 31-36 are activated, the internal timing is outputted through input/output terminals 50-55 to the external part and the circuit is tested.

Description

【発明の詳細な説明】 本発明は半導体集積回路、特に、内部回路の動作に必要
なタイミングを発生するための内部タイミング発生回路
を備えた半導体集積回路(以下集積回路と略記する)に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit, and more particularly to a semiconductor integrated circuit (hereinafter abbreviated as integrated circuit) provided with an internal timing generation circuit for generating timing necessary for the operation of internal circuits.

集積回路技術の絶えさる進展に伴い、集積層は急速に高
まり、集積回路の大規模化・大容量化は、今や超LSI
を実用化するまでに至っている。同時に、集積回路、特
にメモリ集積回路の高性能化・高速化がユーヂサイドか
ら強く要求され、技術開発競争の焦点になっている。
With the continuous progress of integrated circuit technology, the number of integrated circuits has increased rapidly, and the large scale and capacity of integrated circuits has now become very large scale.
has reached the point where it has been put into practical use. At the same time, there is a strong demand from the consumer side for integrated circuits, especially memory integrated circuits, to have higher performance and higher speed, and this has become the focus of technological development competition.

集積回路の高速化を図るには、製造バラツキ、たとえば
トランジスタの増幅率、しきい値電圧。
In order to increase the speed of integrated circuits, manufacturing variations, such as transistor amplification factors and threshold voltages, must be controlled.

接点浮遊容量等に起因するフリップフロップのアンバラ
ンス条件を考慮したうえで、内部タイミングの最適設計
を行なう必要がある。また、最適設計した集積回路も、
量産時にはその製造バラツキの監視を怠ってはならず、
きらに長期間のうちには量産性同上のためのプロセス変
更等もあり得るため、プロセス変更が内部タイミングに
及ぼす影゛響の統計的データケ採る必要が任じることが
ある。
It is necessary to optimally design the internal timing by taking into consideration the flip-flop unbalance conditions caused by contact stray capacitance and the like. In addition, the optimally designed integrated circuit
During mass production, we must not neglect to monitor manufacturing variations.
In addition, over a long period of time, there may be process changes to improve mass production, so it may be necessary to collect statistical data on the effects of process changes on internal timing.

従来のこの棹の集積回路は、前述のような、設計時およ
び量産時に内部タイミングの観測やデータ採取のために
格別の手段を設けておらず、コンピユータを用いた回路
シミュレーションまたはメカニカルプローブや電子ビー
ムによる観測(ストロボSEM)に頼っている。
Conventional integrated circuits of this type do not have special means for observing internal timing or collecting data during design and mass production, as described above, and instead require circuit simulation using a computer, mechanical probes, or electron beams. It relies on observation (stroboscopic SEM).

このような従来構成においては、コンピュータシミュレ
ーションはモデル化の限界によって、またメカニカルプ
ローブや電子ビームによる観測はその作業の困難さの故
に多大の時間を・必要とすることによって、いずれも量
産時におりる品質管理のための有用な方法になり得ない
ため、プロセス変動等が内部タイミングに及はす統計的
データの採取は実際Eできないという欠点がある。 ゛
本発明の目的は、内部タイミング状態を正確かつ容易に
測定できる集積回路を提供することにある。
In such conventional configurations, computer simulation has limitations in modeling, and observation using mechanical probes and electron beams requires a large amount of time due to the difficulty of the work, both of which are difficult to achieve during mass production. It has the disadvantage that it is practically impossible to collect statistical data on internal timing due to process variations, etc., since it cannot be a useful method for quality control. An object of the present invention is to provide an integrated circuit whose internal timing conditions can be measured accurately and easily.

本発明の集積回路は、内部回路の動作に必要なタイミン
グ信号を発生するための内部タイミング発生回路を備え
た半導体集積回路において、外部′から供給される信号
に基づいて測定モードを設定するモード設定回路と、測
定モード時に少なくとも一つの前記タイミング信号を出
力する内部タイミンク信号出力回路とを設け、該内部タ
イミング出力回路を前記半導体集積回路の外部端子に接
続したことを特徴とする。
The integrated circuit of the present invention is a semiconductor integrated circuit equipped with an internal timing generation circuit for generating timing signals necessary for the operation of internal circuits, and has a mode setting that sets a measurement mode based on a signal supplied from the outside. and an internal timing signal output circuit that outputs at least one of the timing signals in a measurement mode, and the internal timing output circuit is connected to an external terminal of the semiconductor integrated circuit.

次に本発明につ(^て図面を参照して説明する。Next, the present invention will be explained with reference to the drawings.

−第1図は本発明の一実施例を示す。本実施例は6個の
信号発生回路1.2.3.4.5および6からなる内部
タイミング発生回路10と、モード判定回路20と、6
個のトライステートゲート31゜32.33,34.3
5および36からなる内部タイミング出力回路30と、
2個の入力端子40および41と、6イ固の入出力端子
50.51.52.53.54および55とを設けてい
る。
- FIG. 1 shows an embodiment of the invention. This embodiment includes an internal timing generation circuit 10 consisting of six signal generation circuits 1.2.3.4.5 and 6, a mode determination circuit 20, and 6.
tri-state gates 31° 32.33, 34.3
an internal timing output circuit 30 consisting of 5 and 36;
Two input terminals 40 and 41 and six input/output terminals 50, 51, 52, 53, 54 and 55 are provided.

弗1図はランダムアクセス可能なメモリ集積回路のうち
の内部タイミング発生部分の一部分のみを示してお9、
該メモリ集積回路の他の大部分、すなわちメモリアレイ
、アドレス回路、センスアンプおよび制御回路等は本発
明の本質に係らないため、また他の内部タイミング発生
部分は第1図と原理的に重複するため、そnぞれ図示を
省略した。
Figure 1 shows only a part of the internal timing generation part of a randomly accessible memory integrated circuit9.
Most other parts of the memory integrated circuit, such as the memory array, address circuit, sense amplifier, and control circuit, are not related to the essence of the present invention, and other internal timing generation parts overlap in principle with FIG. Therefore, illustration of each is omitted.

信号発生回路1〜6のそnぞれは、単安定マルチバイブ
レータ等から構成され、入力端子40に外部から供給さ
nる信号、たとMカラムアドレスストローブ、ロウアド
レスストローブ、ライトイネーブル信号、アウトプット
イネーブル伯号等を遅延させて内部タイミングを発生す
る。このようにして発生し穴内部タイミングは、同一の
メモリ集積回路におけるniI述したような諸回路に、
図示を省略した手段によって供給され、通常のメモリ動
作を行なわせるために使用される。内部タイミングそれ
ぞnは、トライステートゲート31〜36それぞれの一
方の入力にも供給さnている。
Each of the signal generation circuits 1 to 6 is composed of a monostable multivibrator or the like, and receives a signal externally supplied to an input terminal 40, an M column address strobe, a row address strobe, a write enable signal, and an output. Generates internal timing by delaying the enable signal, etc. The hole internal timing generated in this way can be applied to circuits such as those described in the same memory integrated circuit.
It is supplied by means not shown and is used to perform normal memory operations. Each of the internal timings n is also supplied to one input of each of the tristate gates 31-36.

トライステートゲート31〜36そ扛ぞnが接続されて
いる入出力端子50〜55そfL(Inは、本来ハ前述
のアドレス回路、センスアンプおよび制御回路等内部タ
イミング発生回路以外の回路へ、図示を省略tたルート
を介して、外部からの信号を供給するためのものでろる
。入出力端子50〜55は、メモリ集積回路の外部入力
端子のうちで、トライステートゲート31〜36が分岐
出力する内部タイミングとは有効期間が重複しないよう
な外部入力信号用のものが選定される。このような外部
入力信号には、たとえば、メモリ動作サイクルの比較的
早い時期に供給され、アドレスレジスタに保持されるア
ドレス信号がるる。
Input/output terminals 50 to 55 (In) to which tristate gates 31 to 36 are connected (In are originally connected to circuits other than the internal timing generation circuit, such as the aforementioned address circuit, sense amplifier, and control circuit, as shown in the figure) The input/output terminals 50 to 55 are the external input terminals of the memory integrated circuit, and the tri-state gates 31 to 36 are used for branching and outputting signals. For external input signals, the valid period does not overlap with the internal timing for external input signals. The address signal to be sent is

モード判定回路20は、入力端子41を介して外部から
供給される信号に応答して該メモリ集積回路の動作モー
ドが通常動作モードか測定モードかを判定するようにな
っている。判定の基準は、外部入力信号のレベルであっ
てもよいし、夕゛イミングであってもよい。
The mode determination circuit 20 is adapted to determine whether the operation mode of the memory integrated circuit is a normal operation mode or a measurement mode in response to a signal supplied from the outside via an input terminal 41. The criterion for determination may be the level of the external input signal or the timing.

モード判定回路20が通常動作モードを判定したときに
は、モード判定回路20は論理V″0“を出力してすべ
てのトライステートゲート31〜36を非活性化して(
へる。したがって、入出力端子50〜55は入力信号供
給用としてのみ機能することになる。メモリ集積回路は
、通常はこのようにして使用さnている。
When the mode determination circuit 20 determines the normal operation mode, the mode determination circuit 20 outputs logic V"0" and deactivates all tristate gates 31 to 36 (
decrease. Therefore, the input/output terminals 50 to 55 function only for supplying input signals. Memory integrated circuits are commonly used in this manner.

メモリ集積回路をテストしようとする場合には、モード
判定回路20が測定モードを判定して論理“1“を出力
するような入力信号を外部から入力端子41に供給する
。このときには、すべてのトライステートゲート31〜
36が活性化されて、当該内部タイミングを入出力端子
50〜55に伝える。
When a memory integrated circuit is to be tested, an input signal is externally supplied to the input terminal 41 so that the mode determination circuit 20 determines the measurement mode and outputs a logic "1". At this time, all tristate gates 31~
36 is activated and transmits the internal timing to the input/output terminals 50-55.

これらの内部タイミングは入出力端子50〜55を介し
て外部の、たとえばメモリファンクションテスタ等に出
力され、そこでテストに供くrる。メモリファンクショ
ンテスタは、公知のように、メモリ集積回路の機能を高
速に、GO/N0GOテxトできるテスタである。
These internal timings are outputted to an external device such as a memory function tester via input/output terminals 50 to 55, and are used there for testing. As is well known, a memory function tester is a tester that can perform GO/NOGO text on the functions of a memory integrated circuit at high speed.

以砒述べた実施例においては、モード判定回路20に供
給さf’Lる信号を入力端子41を介して外部から供給
さnる1個の信号としているが、本発明はこれに限定さ
nない。すなわち、Ni+述した。ライトイネーブル信
号、アウトプットイネーブル信号等の複数個の外部式カ
イ^号をモード判定回路に供給し、モード判定回路はこ
れら複数個の外部入力信号に基づいて動作モードを判定
するようにしてもよい。この場合には、モード判定回路
への入力端子を、動作モードを判だするために特別に設
ける必要がなく、メモリ集積回路が通常動作時に使用す
る入力端子を転用するかたちになる。
In the embodiment described below, the f'L signal supplied to the mode determination circuit 20 is one signal supplied from the outside via the input terminal 41, but the present invention is not limited to this. do not have. That is, Ni+ was mentioned. A plurality of external input signals such as a write enable signal and an output enable signal may be supplied to the mode determination circuit, and the mode determination circuit may determine the operation mode based on these multiple external input signals. . In this case, there is no need to provide a special input terminal to the mode determination circuit for determining the operation mode, and the input terminal used by the memory integrated circuit during normal operation can be used instead.

本発明によlしば、以上のような構成によって、内部タ
イミングの測定全テスタを使用し外部端子のみから行な
えるようになるため、内“部タイミングを正確かつ容易
にテストでき、内部タイミ/りを量産ライン上において
評価・管理することが可能になる。
According to the present invention, with the above configuration, internal timing can be measured using all testers and only from external terminals, so internal timing can be accurately and easily tested, and internal timing/ It becomes possible to evaluate and manage the process on the mass production line.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す。 1、2.3.4.5.6・・・・・・信号発生回路、1
o・・団・内部タイミング発生回路、2o・・・・・・
モード判定回路、30・・・・・・内部タイミング出力
回路、31.32゜33、34.35.36・・・・・
・トライステートゲート、40.41・・・・・・入力
端子、50.51.52.53.54’。 55・・・・・・入出力端子。
FIG. 1 shows an embodiment of the invention. 1, 2.3.4.5.6... Signal generation circuit, 1
o...group internal timing generation circuit, 2o...
Mode determination circuit, 30...Internal timing output circuit, 31.32°33, 34.35.36...
- Tri-state gate, 40.41... Input terminal, 50.51.52.53.54'. 55... Input/output terminal.

Claims (1)

【特許請求の範囲】 内部回路の動作に必要なタイミング信号を発生する内部
タイミング信号発生回路奮備えた半導体集積回路におい
て、外部から供給される信号に基づいて測定モードを設
定するモード設定回路と、前記測定モード時に少なくと
も一つの前記タイミング信号を取り出す内部タイミング
信号出力回路とを設け、該内部タイミング出力回路をn
lll牢記体集積回路の外部端子に接続したことを特徴
とす。 る半導体集積(ロ)路。
[Scope of claims] In a semiconductor integrated circuit equipped with an internal timing signal generation circuit that generates timing signals necessary for the operation of internal circuits, a mode setting circuit that sets a measurement mode based on a signal supplied from the outside; an internal timing signal output circuit that takes out at least one of the timing signals in the measurement mode;
It is characterized in that it is connected to the external terminal of the integrated circuit. Semiconductor integration (b) path.
JP58194895A 1983-10-18 1983-10-18 Semiconductor integrated circuit Pending JPS6087500A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58194895A JPS6087500A (en) 1983-10-18 1983-10-18 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58194895A JPS6087500A (en) 1983-10-18 1983-10-18 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6087500A true JPS6087500A (en) 1985-05-17

Family

ID=16332111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58194895A Pending JPS6087500A (en) 1983-10-18 1983-10-18 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6087500A (en)

Similar Documents

Publication Publication Date Title
US4878209A (en) Macro performance test
US7603595B2 (en) Memory test circuit and method
US5818250A (en) Apparatus and method for determining the speed of a semiconductor chip
US6424583B1 (en) System and measuring access time of embedded memories
US20080137456A1 (en) Method of testing memory device
US6269462B1 (en) Selectable sense amplifier delay circuit and method
US7023198B2 (en) Semiconductor device and method of inspecting the same
CN101162612A (en) Semiconductor memory device
KR102538991B1 (en) Semiconductor test device and semiconductor test method
KR100339502B1 (en) Merged data line test circuit to test merged data lines with dividing manner and test method using the same
EP0220577B1 (en) Memory array
JPS6087500A (en) Semiconductor integrated circuit
JP3057760B2 (en) Semiconductor device
JPH04274100A (en) Memory-lsi with built-in test circuit
US8531200B2 (en) Semiconductor device for performing test operation and method thereof
JP2009276301A (en) Circuit and method of measuring digital signal delay
JPH11283397A (en) Semiconductor memory and its test method
KR100524925B1 (en) Semiconductor memory device implemented parallel bit test capable of test time and parallel bit test method using the same
JPS645461B2 (en)
JPS609136A (en) Self-testing type lsi
KR100355232B1 (en) Semiconductor memory device having delay pulse generation circuit
KR100230373B1 (en) Merged input/output data test circuit
JPH0498698A (en) On-chip test system for semiconductor memory
KR100379542B1 (en) Test Device for Semiconductor Memory Device
JPS6039186B2 (en) semiconductor element