JPS6086090A - 浮遊帯域溶融装置 - Google Patents

浮遊帯域溶融装置

Info

Publication number
JPS6086090A
JPS6086090A JP19467183A JP19467183A JPS6086090A JP S6086090 A JPS6086090 A JP S6086090A JP 19467183 A JP19467183 A JP 19467183A JP 19467183 A JP19467183 A JP 19467183A JP S6086090 A JPS6086090 A JP S6086090A
Authority
JP
Japan
Prior art keywords
tube
floating zone
raw material
melting
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19467183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6357397B2 (enExample
Inventor
Isamu Shindo
勇 進藤
Hajime Hatano
甫 羽田野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP19467183A priority Critical patent/JPS6086090A/ja
Publication of JPS6086090A publication Critical patent/JPS6086090A/ja
Publication of JPS6357397B2 publication Critical patent/JPS6357397B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP19467183A 1983-10-18 1983-10-18 浮遊帯域溶融装置 Granted JPS6086090A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19467183A JPS6086090A (ja) 1983-10-18 1983-10-18 浮遊帯域溶融装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19467183A JPS6086090A (ja) 1983-10-18 1983-10-18 浮遊帯域溶融装置

Publications (2)

Publication Number Publication Date
JPS6086090A true JPS6086090A (ja) 1985-05-15
JPS6357397B2 JPS6357397B2 (enExample) 1988-11-11

Family

ID=16328364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19467183A Granted JPS6086090A (ja) 1983-10-18 1983-10-18 浮遊帯域溶融装置

Country Status (1)

Country Link
JP (1) JPS6086090A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792593A (en) * 1980-11-25 1982-06-09 Natl Inst For Res In Inorg Mater Melter in floating zone process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792593A (en) * 1980-11-25 1982-06-09 Natl Inst For Res In Inorg Mater Melter in floating zone process

Also Published As

Publication number Publication date
JPS6357397B2 (enExample) 1988-11-11

Similar Documents

Publication Publication Date Title
US4609425A (en) Cold crucible system and method for the meeting and crystallization of non-metallic inorganic compounds
GB827465A (en) Improvements in or relating to methods and apparatus for the manufacture of single crystals of a substance, for example a semi-conductor such as germanium or silicon
US4184065A (en) Heating apparatus having ellipsoidal reflecting mirror
GB827466A (en) Improvements in or relating to methods of and apparatus for manufacturing single crystals
JPH08175896A (ja) 単結晶の製造方法及び装置
EP0092405B1 (en) Method for producing crystals
US3658598A (en) Method of crucible-free zone melting crystalline rods, especially of semiconductor material
JPS6339555B2 (enExample)
JPS6357397B2 (enExample)
JP2550344B2 (ja) 赤外線加熱単結晶製造装置
US4110080A (en) Reactive atmospheric processing crystal growth apparatus
JPS5815473B2 (ja) 浮遊帯域溶融装置
JP2022081116A (ja) 単結晶ファイバー製造装置及び単結晶ファイバー製造方法
JPS6032125Y2 (ja) 単結晶製造装置
JP3106182B2 (ja) バルク単結晶の製造方法
JPS62138383A (ja) 結晶の育成および作成装置
JPS6111914B2 (enExample)
US4695347A (en) Process for the formation of single crystals from the gas phase
US3190728A (en) Apparatus for melting material by means of a flame of elevated temperature
SU116935A1 (ru) Способ выращивани кристаллов из расплава
JPS623406Y2 (enExample)
JPS62148390A (ja) 単結晶育成方法
Firestone et al. Space processing of chalcogenide glass
JP2864466B2 (ja) ダイヤモンド製造装置
JPS5938189B2 (ja) 単結晶の製造方法