JPS6084886A - Linear amorphous solar battery - Google Patents
Linear amorphous solar batteryInfo
- Publication number
- JPS6084886A JPS6084886A JP58193213A JP19321383A JPS6084886A JP S6084886 A JPS6084886 A JP S6084886A JP 58193213 A JP58193213 A JP 58193213A JP 19321383 A JP19321383 A JP 19321383A JP S6084886 A JPS6084886 A JP S6084886A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- solar cell
- linear
- conductive film
- electricity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000000605 extraction Methods 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- -1 and an Al wire Substances 0.000 abstract 1
- 238000009940 knitting Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
（１）技術分野
非晶質太陽電池は、１９７６年にＣａｒｅｓｏｎらによ
り発明されて以来、急速にその性能を向上させコストダ
ウンも計られ実用化が進んでいる。非晶質太陽電池はシ
ランガスの放電分解法を用いることにより結晶シリコン
に比べて大きい面積に均一につけることができるために
、電力用として開発が進められている。またこの放電分
解法を用いると種々の形態をもつものの表面に均一に太
陽電池を形成できる特徴がある。この特徴を利用した線
状非晶質太陽電池構造が本発明であり、線状の特徴を利
用した今までに考えられなかった広い分野への応用価値
がある。DETAILED DESCRIPTION OF THE INVENTION (1) Technical field Since amorphous solar cells were invented by Careson et al. in 1976, their performance has been rapidly improved and costs have been reduced, and their practical use has progressed. Amorphous solar cells are being developed for use in electric power because they can be uniformly applied over a larger area than crystalline silicon by using the discharge decomposition method of silane gas. Furthermore, this discharge decomposition method has the characteristic that solar cells can be uniformly formed on the surface of objects with various shapes. The present invention is a linear amorphous solar cell structure that takes advantage of this feature, and has application value in a wide range of fields that have not been thought of until now.
（２ン従来技術とその問題点（発明の背景）非晶質太陽
電池は従来ガラスやステンレス板高分子板の工うな平板
上に形成し、太陽光に垂直にあてる構造を有していた。(2) Prior art and its problems (background of the invention) Amorphous solar cells have conventionally been formed on a flat plate of glass, stainless steel, or polymer plate, and have a structure in which they are exposed to sunlight perpendicularly.
また、屈曲性を持たせるために、薄いＳＵＳ板や高分子
膜が用いられている。しかし、あくまで平面構造である
ために、使用土の制限があった。Further, in order to provide flexibility, a thin SUS plate or a polymer film is used. However, since it was a planar structure, there were restrictions on the amount of soil that could be used.
本発明は、これらの点を改善すべく、線状の太陽電池を
考案したものである。The present invention devises a linear solar cell in order to improve these points.
本発明に上ると線状であるために平板状のものよりも屈
曲性に富んでふ・り線を編むことで編組構造にして用い
ることができる。また、断面形状が円型であるために、
全方位からの光に感する特長を有している。According to the present invention, since the wire is linear, it has better flexibility than a flat wire, and can be used in a braided structure by weaving loose wires. In addition, since the cross-sectional shape is circular,
It has the characteristic of being sensitive to light from all directions.
（３）発明の構成
第１図に本発明の実施例である線状太陽電池の断面構造
図を示す。(3) Structure of the Invention FIG. 1 shows a cross-sectional structural diagram of a linear solar cell according to an embodiment of the invention.
ｌは、中心導体であり、図のように線状のものと、中空
のパイプのいづれかの構造のものを用０る。1 is the center conductor, and it can be either a linear conductor as shown in the figure or a hollow pipe structure.
ｌ質は、全体を支えるに必要な強度を持ち、かつ電気伝
導性の良いものである。The material has the strength necessary to support the whole structure and has good electrical conductivity.
たとえばＡｌ線、ＳＵＳ線、などがあげられろ。２は、
非晶質太陽゛亀池部であり、Ｐｉｎまたは、これをくり
かえした構造又はショットキー型構造を有する。Examples include Al wire, SUS wire, etc. 2 is
It is an amorphous solar pond part, and has a Pin structure, a repeating structure thereof, or a Schottky structure.
この部分において光が電気に変換される。３は透明導電
膜であり、２の層で発生した電気を１とと５ｎ０２ な
どを用いる。透明導電膜は、電気伝導度た電気を外部へ
導く、４の材料としては良導体である必要があり、ＡＩ
！、Ａｕ線などがあげられる。In this part, light is converted into electricity. 3 is a transparent conductive film, and 1 and 5n02 are used for the electricity generated in layer 2. The transparent conductive film must be a good conductor as it conducts electricity to the outside.
! , Au wire, etc.
４は３の周囲にらせん状に巻きつける方式をとることも
できる。すなわち電気は中心導体ｌと電気取出線４より
外部へ取り出すことになる。さらに、がある。4 can also be wound around 3 in a spiral manner. In other words, electricity is taken out from the center conductor l and the electrical lead-out line 4. Furthermore, there is.
代表的な材料としては、シリコン樹脂、５ｉ３Ｎ４７ｚ
とがある。Typical materials include silicone resin, 5i3N47z
There is.
（４）実施例
実施例１゜
中心導体ｌには、直径５關のアルミ＆全用いて、膜し、
その上に透明導電膜３として５ｎ０２とＩＴＯの複合膜
を積層した。さらに電気取出線４としては、直径０，５
龍のアルミ線をピッチ２０間で巻キつけた。全体の保護
膜としては、Ｓｉ３Ｎ４を数ミクロン被覆した後、４リ
コン樹側を約１間の厚みに被覆した。よって、最終的に
は直径約７間の線状太陽電池を構成した。(4) Examples Example 1゜The center conductor l is made of aluminum with a diameter of 5 mm,
A composite film of 5n02 and ITO was laminated thereon as a transparent conductive film 3. Furthermore, as the electrical lead-out wire 4, the diameter is 0.5
I wrapped Dragon's aluminum wire with a pitch of 20. As the overall protective film, after coating several microns of Si3N4, the 4-recon wood side was coated to a thickness of about 1 inch. Therefore, a linear solar cell with a diameter of about 7 mm was finally constructed.
非晶質太陽電池部の作成条件はガラス基板上に作成した
場合で８％の効率をＡＭｌ、０にて出すものである。変
換効率の測定には長さ２０ｃｍに切ったものを用いた。The conditions for creating the amorphous solar cell section are such that when it is created on a glass substrate, an efficiency of 8% is achieved at AMl, 0. A piece cut into a length of 20 cm was used to measure the conversion efficiency.
特性は、
Ｖｏｃ＝０．９Ｖ Ｊｓｃ＝１４（ｈ＋ｔＡ ＦＦ＝Ｏ
１６である。本太陽電池の照射面積を（長さ）Ｘ（線の
直径）とすると照射面積はＩＯｄとなり、変換効率は７
．５６％であり、線状にしたことによる損失は５％程度
でめった。The characteristics are: Voc=0.9V Jsc=14(h+tA FF=O
It is 16. If the irradiation area of this solar cell is (length) x (wire diameter), the irradiation area is IOd, and the conversion efficiency is 7
．． 56%, and the loss due to the linear shape was only about 5%.
さらに第２図のごと＜、鏡に太陽光を反射させて、線状
太陽電池の上下両面より光を入射した場合には、
Ｖｏｃ’＝０．９ Ｖ、 Ｊｓｃ’＝＝２８０ｎＬｏ、
Ｆ Ｆ ’ ＝０．６となり、出力電流が２倍となり
、繊状構造の特徴が生かせた。この場合、太陽入射面積
に対しては、変換効率は、２倍の１５％になり、反射光
の有効利用を示している。Furthermore, as shown in Figure 2, when sunlight is reflected by a mirror and light is incident from both the upper and lower surfaces of the linear solar cell, Voc'=0.9 V, Jsc'==280nLo,
F F '=0.6, the output current was doubled, and the characteristics of the fibrous structure were utilized. In this case, the conversion efficiency is doubled to 15% with respect to the solar incident area, indicating effective use of reflected light.
実施例２゜
中心導体にはステンレス管（外径２０ｍｍ内径Ｉ９朋）
のものを用いた。長さは１１１Ｌｏ非晶質太陽電池部、
透明導電膜、電気取出課、保護膜は実施例１と同様のも
のである。特性評価には、ＡＭ １．０の平行光線を（
５）一方向より当てる方式と（Ｂ）二方向より当る方式
にて行なった。（５）（Ｂ）での出力特性は、表１にま
とめた。Example 2゜The center conductor is a stainless steel tube (outer diameter 20 mm, inner diameter I9)
I used the one from The length is 111Lo amorphous solar cell part,
The transparent conductive film, the electrical outlet, and the protective film are the same as in Example 1. For characteristic evaluation, a parallel beam of AM 1.0 (
5) A method of hitting from one direction and (B) a method of hitting from two directions. (5) The output characteristics in (B) are summarized in Table 1.
表 １
せてパイプの温度上昇を熱エネルギーとして熱交換器に
より取り出してみたところ、５０７ｎＷと１００７ｚｘ
Ｗが取り出せ、パイプ状にしたことにより、電気、熱両
方のエネルギーを同時に取り出すことができた。又、こ
の方式では、太陽電池の温度上昇を水の冷却により防げ
るために、太陽電池の動作中の出力特性が、水を通さな
かった場合より、５％向」ユするとともに、長期劣化度
も、大巾に向上することが期待される。Table 1 When the temperature rise in the pipe was extracted as thermal energy by a heat exchanger, it was 507nW and 1007zx
By extracting W and making it into a pipe shape, it was possible to extract both electrical and thermal energy at the same time. In addition, with this method, since the temperature rise of the solar cells can be prevented by cooling the solar cells with water, the output characteristics of the solar cells during operation are improved by 5% compared to when no water passes through them, and the degree of long-term deterioration is also reduced. , is expected to improve significantly.
以上実施例ではｐｉｎ構造の非晶質シリコン太陽電池を
用いたが、ｐｉｎを多層に積み重ねた構造やショットキ
ー型の太陽電池を用いることができることは、ｊうまで
もない。さらに、ｐ層を太陽光入射側とするｐｉｎ又は
その積層構造のほか、ｎ層を入射光側とする逆タイプを
用いることができる。In the above embodiments, an amorphous silicon solar cell with a pin structure was used, but it goes without saying that a structure in which pins are stacked in multiple layers or a Schottky type solar cell can also be used. Furthermore, in addition to a pin or its laminated structure in which the p layer is on the sunlight incident side, a reverse type in which the n layer is on the incident light side can be used.
−気を取出すために、透明導電膜の周囲にらせん状に巻
いた電線について、電気接触性１１はを向上させる為に
、透明導電膜と電線の間に導電性接着材を用いたり、ハ
ンダを用いることができる。さらに、電線をらせん状に
巻く他に、透明導電股上にストライブ状に電線を取付け
ることもできる。- In order to improve the electrical contact property 11 of electric wires spirally wound around a transparent conductive film in order to remove air, conductive adhesive or solder is used between the transparent conductive film and the wire. Can be used. Furthermore, in addition to winding the electric wire in a spiral shape, it is also possible to attach the electric wire in a stripe shape to the transparent conductive crotch.
第１図は本発明による線状非晶質′太陽電池の断面猜造
図である。
第２図は本発明の線状非晶質太陽電池の特性評価方法を
示した図である。
ｌ・・中心導体、２ ・非晶質太陽電池部、３ ・透明
導電膜、４・・・′１ｄ気取出線、５・・渫護膜、６・
・太陽光、７・・・反射した太陽光、８ 線状非晶質太
陽電池、９・・鏡。
代理人 弁理士 上 代 哲 司ａ’、ｌｌ’、’：・
−１１，−
芹ＩＶ
芳FIG. 1 is a cross-sectional view of a linear amorphous solar cell according to the present invention. FIG. 2 is a diagram showing a method for evaluating the characteristics of a linear amorphous solar cell according to the present invention. 1. Central conductor, 2. Amorphous solar cell part, 3. Transparent conductive film, 4.'1d air intake line, 5. Waterproof film, 6.
・Sunlight, 7...Reflected sunlight, 8 Linear amorphous solar cell, 9...Mirror. Agent Patent Attorney Satoshi Tsukasa a',ll',':・
-11,- Seri IV Yoshi
Claims (1)
る線状非晶質太陽電池。 （２）線あるいはパイプ状基体の材料として電気伝導度
の大きい材料を用いて電極としても用いることを特徴と
する特許請求範囲第１項記載の線状非晶質太陽電池。 （３）取出電極として、電気伝導度の大きい材料の細線
を線状太陽電池の透明導電膜上にらせん状に巻いたこと
を特徴とする特許請求範囲第１項及び第２項記載の線状
非晶質太陽電池。 （４）起電力発生層である非晶質膜として、ショットキ
ー型を用いる方式あるいはＰｉｎを１層または多層積重
おた構造を有することを特徴とする特許請求範囲第１．
２．８項記載の線状非晶質太陽電池。[Scope of Claims] (A linear amorphous solar cell characterized in that the substrate has the shape of a wire or pipe. (2) A material with high electrical conductivity is used as the material of the wire or pipe-shaped substrate. The linear amorphous solar cell according to claim 1, which is also used as an electrode. (3) As an extraction electrode, a thin wire made of a material with high electrical conductivity is placed on the transparent conductive film of the linear solar cell. A linear amorphous solar cell according to claims 1 and 2, characterized in that the solar cell is wound spirally. Claim 1 is characterized in that it has a method used or a structure in which the pins are stacked in one layer or in multiple layers.
Linear amorphous solar cell according to Section 2.8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193213A JPS6084886A (en) | 1983-10-14 | 1983-10-14 | Linear amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193213A JPS6084886A (en) | 1983-10-14 | 1983-10-14 | Linear amorphous solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6084886A true JPS6084886A (en) | 1985-05-14 |
Family
ID=16304181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58193213A Pending JPS6084886A (en) | 1983-10-14 | 1983-10-14 | Linear amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6084886A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995022177A1 (en) * | 1994-02-15 | 1995-08-17 | Cole Eric D | Semiconductor fiber solar cells and modules |
| JPH10256579A (en) * | 1997-03-13 | 1998-09-25 | Toshiba Corp | Photoelectric conversion element |
| WO2003094247A1 (en) * | 2002-05-02 | 2003-11-13 | Ideal Star Inc. | Solar battery and clothes |
| WO2005029657A1 (en) * | 2003-09-19 | 2005-03-31 | The Furukawa Electric Co., Ltd. | Solar cell module and its element |
| WO2007002110A2 (en) * | 2005-06-20 | 2007-01-04 | Solyndra, Inc. | Bifacial elonagated solar cell devices |
| ES2288356A1 (en) * | 2005-06-21 | 2008-01-01 | Angel Lopez Rodriguez | Photovoltaic filament for generating photovoltaic energy using solar radiation, has multilayer thread structure with determined length and section, where transparent polymer coating is provided |
| US7394016B2 (en) | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
| JP2010171364A (en) * | 2009-01-23 | 2010-08-05 | Samsung Electronics Co Ltd | Method for forming silicon film, method for forming pn junction, and pn junction formed by using the same |
-
1983
- 1983-10-14 JP JP58193213A patent/JPS6084886A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995022177A1 (en) * | 1994-02-15 | 1995-08-17 | Cole Eric D | Semiconductor fiber solar cells and modules |
| JPH10256579A (en) * | 1997-03-13 | 1998-09-25 | Toshiba Corp | Photoelectric conversion element |
| WO2003094247A1 (en) * | 2002-05-02 | 2003-11-13 | Ideal Star Inc. | Solar battery and clothes |
| WO2005029657A1 (en) * | 2003-09-19 | 2005-03-31 | The Furukawa Electric Co., Ltd. | Solar cell module and its element |
| JPWO2005029657A1 (en) * | 2003-09-19 | 2007-11-15 | 古河電気工業株式会社 | Solar cell module and its elements |
| JP4609856B2 (en) * | 2003-09-19 | 2011-01-12 | 古河電気工業株式会社 | One-dimensional solar cell, solar cell module, and solar cell power generation system |
| WO2007002110A2 (en) * | 2005-06-20 | 2007-01-04 | Solyndra, Inc. | Bifacial elonagated solar cell devices |
| WO2007002110A3 (en) * | 2005-06-20 | 2007-08-30 | Solyndra Inc | Bifacial elonagated solar cell devices |
| ES2288356A1 (en) * | 2005-06-21 | 2008-01-01 | Angel Lopez Rodriguez | Photovoltaic filament for generating photovoltaic energy using solar radiation, has multilayer thread structure with determined length and section, where transparent polymer coating is provided |
| US7394016B2 (en) | 2005-10-11 | 2008-07-01 | Solyndra, Inc. | Bifacial elongated solar cell devices with internal reflectors |
| JP2010171364A (en) * | 2009-01-23 | 2010-08-05 | Samsung Electronics Co Ltd | Method for forming silicon film, method for forming pn junction, and pn junction formed by using the same |
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