JPS6079713A - Vapor growth equipment - Google Patents

Vapor growth equipment

Info

Publication number
JPS6079713A
JPS6079713A JP18672383A JP18672383A JPS6079713A JP S6079713 A JPS6079713 A JP S6079713A JP 18672383 A JP18672383 A JP 18672383A JP 18672383 A JP18672383 A JP 18672383A JP S6079713 A JPS6079713 A JP S6079713A
Authority
JP
Japan
Prior art keywords
bell jar
susceptor
processed
wall
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18672383A
Other languages
Japanese (ja)
Inventor
Tsukasa Masuda
司 増田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18672383A priority Critical patent/JPS6079713A/en
Publication of JPS6079713A publication Critical patent/JPS6079713A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE:To prevent deposition of a reaction product on the inner wall of a bell jar and contrive to miniaturize an equipment by making at least part of the bell jar with a translucent material for proper quantity of thermal radiation from the bell jar. CONSTITUTION:A reaction chamber 4 is made of a base 1 and a bell jar 3. A material to be processed 11 is placed on a susceptor 10 and processed by gas 6 supplied from a gas supply pipe 8. Under the susceptor 10, a high frequency coil heater 12 is provided for heating the susceptor 10 and the material to be processed 11. At least part of the bell jar 3 of the abovementioned construction in a longitudinal type vapor growth equipment is made of a translucent material. This makes part of radiated heat transmit through the bell jar 3 and the other part reflected by the inner wall surface of the bell jar. The transparency of the translucent material is so determined that the temperature of the bell jar 3 is made approximately a temperature which does not thermally decompose the gas for processing on the inner wall surface.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は気相成長装置、特に半導体基板にエピタキシャ
ル成長あるいはデポジションなどを施して半導体基板の
表面に各種被膜を形成する継型気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a vapor phase growth apparatus, and particularly to a joint type vapor phase growth apparatus that performs epitaxial growth or deposition on a semiconductor substrate to form various films on the surface of the semiconductor substrate.

〔背景技術〕[Background technology]

半導体装置製造において、半導体基板（ウェハ）の表面
にエピタキシャル層を成長させたり、あるいは酸化膜等
の被Ｒ′に一被着する装置の一つとして、たとえば、「
電子材料Ｊ１９７８年１１月号、７０〜７８頁１エピタ
キシヤル・ＯＶＤ装置」にも記載されているように、加
熱されるサセプタ上に載置されるウェハを石英のベルジ
ャで被う縦型気相成長装置が知られ工いる。In the manufacturing of semiconductor devices, for example, "
As described in ``Electronic Materials J, November 1978 issue, pp. 70-78 1. Epitaxial OVD Apparatus,'' a vertical vapor phase system in which a wafer placed on a heated susceptor is covered with a quartz belljar. There are known growth devices.

ところで、このような装置は、処理ガスが高温状態にあ
るベルジャ内壁に接触すると熱分解を起してその放生物
がベルジャ内壁に析出する。そこで、従来はベルジャの
低温化を図るために、不透明ペルジャの外周部に冷却水
が流れるパイプを配設したり、あるいはベルジャタ透明
体として輻射熱の透過を図ることによってベルジャの低
温化を図っている。By the way, in such an apparatus, when the processing gas comes into contact with the inner wall of the bell jar which is in a high temperature state, thermal decomposition occurs and the released products are deposited on the inner wall of the bell jar. Conventionally, in order to lower the temperature of the bell jar, attempts were made to lower the temperature of the bell jar by installing a pipe through which cooling water flows around the outer periphery of the opaque bell jar, or by making the bell jar a transparent body to allow radiant heat to pass through. .

しかし、前記のような装置ではつぎのような問題が生じ
ることが本発明者によってあきらかとされた。However, the inventor has found that the following problem occurs in the above-mentioned apparatus.

｛１｝、ベルジャを水冷する縦型気相成長装置は装置が
小型化できるが、ベルジャが不透明であることから、ベ
ルジャ内に熱がこもり、ベルジャ内壁部分で処理ガスが
熱分解を生じ易く、ベルジャ内壁に反応物が析出し易く
なる。ベルジャへの反応生成物の析出は、析出物のベル
ジャからの剥離によるウェハへの付着を引き起し、被膜
形成において、膜の異常成長へと発展し、歩留の低下の
原因となる。また、この装置は、析出物のウェハ付着を
できるだけ少なくするために、頻繁にベルジャを洗浄し
て析出物除去を行なう必要も生じ、工数が増大する。{1} A vertical vapor phase growth device that cools the bell jar with water can make the device smaller, but since the bell jar is opaque, heat accumulates inside the bell jar, and the processing gas tends to thermally decompose on the inner wall of the bell jar. Reactants tend to precipitate on the inner wall of the bell jar. The precipitation of the reaction product on the bell jar causes the precipitate to peel off from the bell jar and adhere to the wafer, leading to abnormal growth of the film during film formation and causing a decrease in yield. Furthermore, in order to minimize the amount of deposits attached to the wafer, this apparatus requires frequent cleaning of the bell jar to remove deposits, which increases the number of steps.

（２）、ベルジャを透明体とした装置は、熱がベルジャ
を透過するため、熱はベルジャ内壁部分にこもらなくな
り、熱分解による反応物のベルジャへの析出は生じ難く
なる。しかし、この構造はベルジャ外に洩れ出る多量の
熱の処理機構が必要となり、ベルジャを取り囲むカバー
（炉体）構造が複雑かつ大型化する欠点がある。すなわ
ち、カバーの存在がベルジャにおける熱放射に支障を来
たさないようにするためには、ベルジャ外壁面とカバー
の内壁面との間隔はできるだけ大きい方がよいことから
、カバーは大型となる。また、カバーには冷却装置を設
けてベルジャから放射（輻射）される熱の除去を図る必
要がある。(2) In a device in which the bell jar is a transparent body, heat passes through the bell jar, so that heat is not trapped in the inner wall of the bell jar, and it becomes difficult for reactants to be deposited in the bell jar due to thermal decomposition. However, this structure requires a mechanism for treating a large amount of heat leaking out of the bell jar, and has the disadvantage that the cover (furnace body) structure surrounding the bell jar becomes complicated and large. That is, in order to prevent the presence of the cover from interfering with heat radiation in the bell jar, the distance between the outer wall surface of the bell jar and the inner wall surface of the cover should be as large as possible, so the cover becomes large. Further, it is necessary to provide a cooling device on the cover to remove heat radiated from the bell jar.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、反応生成物がベルジャの内壁に析出し
難い縦型気相成長装置を提供することにある。An object of the present invention is to provide a vertical vapor phase growth apparatus in which reaction products are less likely to be deposited on the inner wall of a bell jar.

また、本発明の他の目的は装置全体が小型となる。縦型
気相成長装置を提供することにある。Another object of the present invention is to reduce the size of the entire device. An object of the present invention is to provide a vertical vapor phase growth apparatus.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願に分いて開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.

すなわち、本発明はベルジャｔその内壁部分で処理ガス
（反応ガス）が熱分解！生じない程度の温度となるよう
に、適宜な熱放射がなされる半透明体とすることにより
、ベルジャ内壁面への反応生成物の析出防止を“図ると
ともに、ベルジャの外に放出される熱放射量を最小限と
することにより、ベルジャ舎被う水冷機構等を有するカ
バー（炉体）の小型化を達成するものである。In other words, in the present invention, the processing gas (reactant gas) is thermally decomposed on the inner wall of the bell jar! By making it a translucent body that emits appropriate heat radiation so that the temperature is low enough to prevent the reaction from occurring, it is possible to prevent the reaction products from precipitating on the inner wall of the bell jar, and to reduce the amount of heat radiation emitted to the outside of the bell jar. By minimizing the amount, it is possible to downsize the cover (furnace body) that covers the bell jar housing and has a water cooling mechanism, etc.

〔実施例〕〔Example〕

第１図は本発明の一実施例による縦型気相成長装置の概
要を示す断面図である。FIG. 1 is a sectional view showing an outline of a vertical vapor phase growth apparatus according to an embodiment of the present invention.

この縦型気相成長装置は、同図に示すように、石英から
なる基台１と、この基台、１上に０−ＩＪソングを介し
て着脱自在でかつ気密的に取り付けられるベルジャ３と
、によって反応室４を構成する反応容器５を有している
。前記ベルジャ３は半透明となってい又、輻射熱（放射
熱）の一部は透過させ、一部はベルジャ３の内壁面で反
射させる構造となり、後述するように、ベルジャ３の内
壁面部分では処理ガス６が熱分解しない程度の温度とな
るような熱放射を行なう透明度となっ℃いる。As shown in the figure, this vertical vapor phase growth apparatus includes a base 1 made of quartz, and a belljar 3 that is removably and airtightly attached to the base 1 via an 0-IJ song. , has a reaction vessel 5 that constitutes a reaction chamber 4. The bell jar 3 is semi-transparent and has a structure that allows some of the radiant heat to pass through and reflects some of it on the inner wall surface of the bell jar 3.As will be described later, the inner wall surface of the bell jar 3 is not treated. The transparency is such that heat is radiated to a temperature that does not cause the gas 6 to thermally decompose.

一方、基台１の中心部には上部のノズル７から処理ガス
（反応ガス）６を放出するガス供給管８が貫通状態で固
定されている。また、基台ｌには排気口９が配設され、
熱処理時には強制排気によって反応室４内を所望の雰囲
気、たとえばモノシランによるシリコンのエピタキシャ
ル成長では３ｉＨ４＋Ｈ，の雰囲気とするようになって
いる。On the other hand, a gas supply pipe 8 for discharging a processing gas (reactant gas) 6 from a nozzle 7 in the upper part is fixed to the center of the base 1 in a penetrating state. In addition, an exhaust port 9 is provided on the base l,
During heat treatment, forced exhaust is used to create a desired atmosphere in the reaction chamber 4, for example, an atmosphere of 3iH4+H in the case of epitaxial growth of silicon using monosilane.

他方、基台１の主面（上面）側にはドーナツ状板からな
る石英製のサセプタ１０がベデルスタ１０ａＫ支えられ
前記ガス供給管８を取り囲むように同心円的に設けられ
ている。このサセプタ１０上には被処理物であるシリコ
ン基板（ウェハ）１１が載置される。また、サセプタ１
０の下方にはサセプタｌＯおよびウェハ１１を加熱する
高周波コイルヒータ１２が配設され１いる。On the other hand, on the main surface (upper surface) side of the base 1, a susceptor 10 made of quartz and made of a donut-shaped plate is supported by a bedel star 10aK and is provided concentrically so as to surround the gas supply pipe 8. A silicon substrate (wafer) 11, which is an object to be processed, is placed on the susceptor 10. Also, susceptor 1
A high frequency coil heater 12 for heating the susceptor lO and the wafer 11 is disposed below the wafer 11.

なお、反応容器５はカバー（炉体）１３に取り囲まれて
いる。このカバー１３は特に図示はしないが、冷却水で
カバー１３’Ｙ冷却するような冷却機構を有し、ベルジ
ャ３を透過してきた輻射熱を冷却するようになっている
。゛ このような装置は、たとえばノズル７からＳｉＨ４およ
びＨ，を反応室４内に放出しなからウェハ１１面にシリ
コンからなるエピタキシャル層を成長させる。この熱処
理時、ベルジャ３は半透明体となっていることから、輻
射熱の一部はベルジャ３の内壁面で反射し℃ベルジャ３
内に戻り、一部ハヘルジャ３′（１１′透過して外部に
放射される。Note that the reaction vessel 5 is surrounded by a cover (furnace body) 13. Although this cover 13 is not particularly shown, it has a cooling mechanism that cools the cover 13'Y with cooling water, and is designed to cool the radiant heat that has passed through the bell jar 3. ``Such an apparatus injects SiH4 and H into the reaction chamber 4 from the nozzle 7, and then grows an epitaxial layer made of silicon on the surface of the wafer 11. During this heat treatment, since the bell jar 3 is semi-transparent, some of the radiant heat is reflected by the inner wall surface of the bell jar 3.
A portion of the radiation returns to the inside, passes through the haherjar 3'(11'), and is emitted to the outside.

ベルジャ３は半透明体となっているため、ベルジャ壁内
での吸熱は少なく、ベルジャ３の内壁面近傍Ｇ！ＳｉＨ
４が熱分解する程の高温度とはならず、ベルジャ温度が
高温である結果生じるベルジャ壁面へのシリコンの析出
は起キナイ。Since the bell jar 3 is a semi-transparent body, there is little heat absorption within the bell jar wall, and G! SiH
The temperature is not high enough to thermally decompose 4, and the precipitation of silicon on the bell jar wall surface as a result of the high bell jar temperature does not occur.

〔効果〕〔effect〕

（１）、本発明はベルジャを半透明体として反応室内か
ら放出される輻射熱の一部をベルジャ外に放射させ、ベ
ルジャの内壁近傍で処理ガスの熱分解が生じない程度の
温度にベルジャ温度を維持させる結果、ベルジャ内壁へ
の反応生成物の析出は生じ難くなる。(1) The present invention uses a belljar as a translucent body to radiate a part of the radiant heat emitted from the reaction chamber to the outside of the belljar, and to raise the belljar temperature to a temperature that does not cause thermal decomposition of the processing gas near the inner wall of the belljar. As a result of this maintenance, precipitation of reaction products on the inner wall of the bell jar becomes less likely to occur.

（２）、前記（１）から、ベルジャの反応生成物付着汚
染が少ないため、ベルジャの洗浄頻度が少なくなり、装
置の稼動率の向上が図れる。(2) From the above (1), since the bell jar is less contaminated with reaction products, the bell jar needs to be cleaned less frequently, and the operating rate of the apparatus can be improved.

（３）、前記（１）から、ベルジャの反応生成物付着汚
染が少ないため、ベルジャに付着している反応生成物の
剥離脱落によるウェハの汚染が少なくなり、品質の高い
被膜形成を高歩留で製造することができる効果が得られ
る。(3) From (1) above, since there is less contamination from the reaction products attached to the bell jar, there is less contamination of the wafer due to peeling off of the reaction products attached to the bell jar, and high yields can be achieved by forming a high quality film. The effect that can be obtained by manufacturing is obtained.

（４）、本発明の装置はベルジャが半透明体となってい
ることから、透明ベルジャに比較してベルジャ外への熱
の輻射量は少ない。この結果、ベルジャを被うカバーは
従来装置のようにベルジャから大きく引き離す必要も１
ｊ＜なり、カバーの小型化、換言すれば縦型気相成長装
置全体の小型化が図れる効果が得られる。(4) Since the bell jar of the device of the present invention is a semi-transparent body, the amount of heat radiated to the outside of the bell jar is smaller than that of a transparent bell jar. As a result, the cover covering the bell jar no longer needs to be pulled far away from the bell jar as in conventional equipment.
If j<, the effect of reducing the size of the cover, or in other words, reducing the size of the entire vertical vapor growth apparatus can be obtained.

（５）、本発明はベルジャタ１への熱の放射量は少なく
なるため、熱の有効利用化が図ｊ、結果としてヒータの
出力低減も可能とｔ、（す、省エネルギー化が図れる。(5) In the present invention, since the amount of heat radiated to the bell heater 1 is reduced, the heat can be used more effectively, and as a result, the output of the heater can be reduced, resulting in energy savings.

（６）、上記（１）〜（５）より、装置の小型化による
設備費低減化、省エネルギー化、装置稼動率の同士化。(6) From (1) to (5) above, equipment costs can be reduced by downsizing the device, energy can be saved, and device operating rates can be improved.

製品歩留の向上化によって、製品コストの低減という相
乗効果が得ら才する。By improving product yield, a synergistic effect of reducing product costs can be obtained.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものでは１；ｃ　＜、その要旨を逸脱しない範囲で種々
変更可能であることはいうまでも１ｆい。たとえば、第
２図に示すように、ベルジャ３の上部（天井部）は熱放
射率が更に高い透明体とし、他は半透明体とすることに
より、天井部分のベルジャの温度低下によって、反応生
成物付着防止化をさらＶｃ確実化することができる。ま
た、この構造では、天井部分は透明体となっていること
からベルジャ内を観察するための覗き窓ともなる効果を
奏する。Although the invention made by the present inventor has been specifically explained above based on the examples, the present invention is not limited to the above-mentioned examples. Needless to say, it's 1f. For example, as shown in Fig. 2, the upper part (ceiling part) of the bell jar 3 is made of a transparent material with higher thermal emissivity, and the other parts are made of semi-transparent material, so that the temperature of the bell jar 3 in the ceiling part decreases, causing reaction generation. Vc can be further ensured to prevent the adhesion of substances. Furthermore, in this structure, since the ceiling part is transparent, it also functions as a viewing window for observing the inside of the bell jar.

また、第３図に示すように、半透明体ベルジャ３の下部
、すなわち、ヒータ１２やサセプタ１０を取り囲むベル
ジャ部分は不透明体１４とすることによって、ベルジャ
３の下部では熱放射率を極めて少なくし、ベルジャ３の
内壁面での輻射熱の°反射を多くして、熱の逃げ防止に
よって熱の有効利用化、換言するならば省エネルギー化
ｔｔ図るようにしてもよい。Furthermore, as shown in FIG. 3, by making the lower part of the semitransparent belljar 3, that is, the belljar portion surrounding the heater 12 and the susceptor 10, an opaque body 14, the thermal emissivity in the lower part of the belljar 3 can be extremely reduced. It is also possible to increase the reflection of radiant heat on the inner wall surface of the bell jar 3 to prevent heat from escaping, thereby making effective use of heat, or in other words, saving energy.

なお、本発明は覗き窓は必ずしもベルジャの天井部分だ
けでなく、ベルジャの側部に設けて、他の装置との関係
にかいて見易（してもよい。−〔利用分野〕 以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるエピタキシャル成長
技術に適用した場合について説明したが、それに限定さ
れるものではなく、たとえば、０ＶＤ（気相化学成長）
装置等にも同様に適用できる。Note that in the present invention, the viewing window is not necessarily provided only on the ceiling of the bell jar, but may also be provided on the side of the bell jar to facilitate viewing in relation to other devices. In this section, we have mainly explained the case where the invention made by the present inventor is applied to epitaxial growth technology, which is the field of application that is the background of the invention, but it is not limited thereto.For example, 0VD (vapor phase chemical growth)
It can be similarly applied to devices, etc.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例による縦型気相成長装置の概
要を示す断面図、 第２図は本発明の他の実施例による縦型気相成長装置の
概要を示す断面図、 第３図は本発明のさらに他の実施例による縦型気相成長
装置の概要を示す断面図である。 １・・・基台、２・・・０−リング、３・・・ベルジャ
、４・・・反応室、５・・・反応容器、６・・・処理ガ
ス、７・・・ノズ／Ｉ／、８・・・ガス供給管、９・・
・排気口、１０・・・サセプタ、１０ａ・・・ベデルス
タ、１１・・・シリコン基板（ウェハ）、１２・・・高
周波コイルヒータ、１３・・・カバ、−１１４・・・不
透明体。 代理人　弁理士　高　橋　明　夫＜’、ｌ’　”：’゛
、。FIG. 1 is a cross-sectional view schematically showing a vertical vapor phase growth apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view schematically showing a vertical vapor phase growth apparatus according to another embodiment of the present invention, FIG. 3 is a sectional view showing an outline of a vertical vapor phase growth apparatus according to still another embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Base, 2... O-ring, 3... Belljar, 4... Reaction chamber, 5... Reaction container, 6... Processing gas, 7... Noz/I/ , 8... gas supply pipe, 9...
- Exhaust port, 10... Susceptor, 10a... Bedelstar, 11... Silicon substrate (wafer), 12... High frequency coil heater, 13... Cover, -114... Opaque body. Agent Patent Attorney Akio Takahashi<', l'”:'゛,.

Claims (1)

【特許請求の範囲】[Claims] １、ベルジャを有する気相成長装置であって、前記ベル
ジャの少なくとも一部は半透明体であることを特徴とす
る気相成長装置。1. A vapor phase growth apparatus having a bell jar, wherein at least a portion of the bell jar is a semitransparent body.
JP18672383A 1983-10-07 1983-10-07 Vapor growth equipment Pending JPS6079713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18672383A JPS6079713A (en) 1983-10-07 1983-10-07 Vapor growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18672383A JPS6079713A (en) 1983-10-07 1983-10-07 Vapor growth equipment

Publications (1)

Publication Number Publication Date
JPS6079713A true JPS6079713A (en) 1985-05-07

Family

ID=16193504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18672383A Pending JPS6079713A (en) 1983-10-07 1983-10-07 Vapor growth equipment

Country Status (1)

Country Link
JP (1) JPS6079713A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979466A (en) * 1986-12-01 1990-12-25 Hitachi, Ltd. Apparatus for selective deposition of metal thin film
US4987421A (en) * 1988-06-09 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Microstrip antenna

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4979466A (en) * 1986-12-01 1990-12-25 Hitachi, Ltd. Apparatus for selective deposition of metal thin film
US4987421A (en) * 1988-06-09 1991-01-22 Mitsubishi Denki Kabushiki Kaisha Microstrip antenna

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