JPS6079604A - Method of producing polyacrylonitrile conductive film - Google Patents

Method of producing polyacrylonitrile conductive film

Info

Publication number
JPS6079604A
JPS6079604A JP18749883A JP18749883A JPS6079604A JP S6079604 A JPS6079604 A JP S6079604A JP 18749883 A JP18749883 A JP 18749883A JP 18749883 A JP18749883 A JP 18749883A JP S6079604 A JPS6079604 A JP S6079604A
Authority
JP
Japan
Prior art keywords
film
conductive film
pan
conductivity
polyacrylonitrile
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18749883A
Other languages
Japanese (ja)
Other versions
JPH0379801B2 (en
Inventor
松本 喜代一
稲野 光正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP18749883A priority Critical patent/JPS6079604A/en
Publication of JPS6079604A publication Critical patent/JPS6079604A/en
Publication of JPH0379801B2 publication Critical patent/JPH0379801B2/ja
Granted legal-status Critical Current

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  • Conductive Materials (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明はポリアクリロニトリルフィルムに導電性を付与
する製造方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a manufacturing method for imparting electrical conductivity to a polyacrylonitrile film.

高分子材料は一般に心気抵抗値が大きく、その抵抗値は
10〜10 Ω、偏を示し、准気絶縁材料とし゛C使用
されCいる。
Polymer materials generally have a large inspiratory resistance value, which varies from 10 to 10 Ω, and are used as quasi-insulating materials.

一方、この高分子材料に金4やカーボンなどの感心粉末
を混合しC導1遵材料としCの使用が試みられCいる。
On the other hand, attempts have been made to use C as a C-conducting material by mixing sensitive powders such as gold 4 and carbon with this polymeric material.

これには、たとえばポリエチレン、ポリプロピレン、ナ
イロン、エポキシなどの材料に、アルミニウム、鉄、銀
、カーボンなどの粉末を混ぜたもので、その批仇埴に1
U〜IL111.嵐のものが得られCいる。この池に、
高分子材料それ自身に導電性を持たせたものが出現しC
いる。
For example, this is a mixture of materials such as polyethylene, polypropylene, nylon, and epoxy with powders such as aluminum, iron, silver, and carbon.
U~IL111. Arashi's things are obtained. In this pond,
With the emergence of polymeric materials that have conductivity themselves, C
There is.

これには、たとえばポリアクリロニトリルを熱分解する
ことによシ半導性を持たせたものがあり、さらには耐熱
性のポリイミドフィルムを熱分解したものがあり、これ
によれば10Ω、1の抵抗値を有するものが得られCい
る、 本発明はポリアクリロニトリル高分子材料を用込た新規
な導電性フィルムの製造方法を提供することを目的とす
る。
For example, there is a material made by thermally decomposing polyacrylonitrile to give it semiconductivity, and there is also a material made by thermally decomposing a heat-resistant polyimide film, which has a resistance of 10Ω and 1. An object of the present invention is to provide a novel method for producing a conductive film incorporating a polyacrylonitrile polymer material.

また、本発明は導電率の調整が容易なポリアクリロニト
リルからなる高分子導電性フィルムの製造方法を提供す
ることを目的とする。
Another object of the present invention is to provide a method for producing a polymeric conductive film made of polyacrylonitrile whose conductivity can be easily adjusted.

〕−なりち、本見間の要旨とするところは、ポリアクリ
ロニトリルフィルムに第1銅イオンを錯体とし′C4人
し、その後研元することによつC導電性を付与すること
ヲ特舐とするポリアクリ1コニトリル導電性フイルムの
製造方法であるっ本発明方法によつC得られたポリアク
lj Oニトリルの導電性フィルムの用途としCは、た
とえば面発熱体、均−導閣体などに利用される。
] - The gist of Narichi and Honmima is that the polyacrylonitrile film is given C conductivity by complexing cuprous ions and then polishing. This is a method for producing a conductive film of polyacrylic 1conitrile.C is a method for producing a conductive film of polyacrylic nitrile obtained by the method of the present invention. be done.

以下、本発明を実施例に従つC詳細に説明する。っ実施
例 まず、第1工程とし゛Cポリアクリロニトリルのフィル
ムの製tliにりい′C説明する。
Hereinafter, the present invention will be described in detail according to examples. EXAMPLES First, the first step, the process for producing a polyacrylonitrile film, will be explained.

公知の方法により重合したポリアクリロニトリル(以下
PANという)の14%N 、 Nジメチルホルムアミ
ド溶液を表面が清浄で平坦なガラス板上に流延し、室温
下、減圧2.uH9で48時間乾燥した。使用したPA
Nの孜平均分子緊は7−12万であった。さらに、温度
45C115ruI)IQ で24時間乾燥し、ガラス
板からゆっくりと剥離しCPANのフィルムを得た。
A 14% N,N dimethylformamide solution of polyacrylonitrile (hereinafter referred to as PAN) polymerized by a known method was cast onto a glass plate with a clean and flat surface, and the mixture was heated at room temperature under reduced pressure for 2.5 hours. Dry at uH9 for 48 hours. PA used
The average molecular weight of N was 70,000-120,000. Furthermore, it was dried at a temperature of 45C115ruIQ for 24 hours and slowly peeled off from the glass plate to obtain a CPAN film.

得られたPANフィルムは秀明で、厚さ50〜1001
1mm ガラス転移温度(Tg)=a 2〜92’c。
The obtained PAN film is clear and has a thickness of 50~1001
1 mm Glass transition temperature (Tg) = a 2-92'c.

冷結晶化温度(rac)=I 12trであった。The cold crystallization temperature (rac) was 12 tr.

次に、第2工程とし−〔PANフィルムに第1銅イオン
を錯体とし゛〔導入する工程を説明する。
Next, the second step of introducing cuprous ions as a complex into the PAN film will be described.

0.3〜2 % CuCe を水尚液に、15〜3 %
 Na(: l及びCuC1ff1と同量のCu網を水
とともに所定の比率で加え゛C煮沸した。
0.3-2% CuCe in water, 15-3%
A Cu net of the same amount as Na(1) and CuC1ff1 was added together with water at a predetermined ratio and boiled at 1C.

上記水容液が透明になったところで、上記工程で得たP
ANフィルム20枚(約8.5g)を水容液に投入し、
煮沸状態で1〜8時間反応させ、各時間ごとに煮沸した
PANフィルムを各4枚宛取シ出し、15での水に゛C
超音波洗浄器中で5分間洗浄し、さらに流水中で1時間
洗浄した。その後温度4ohで真空乾1栗し、PANフ
ィルムに第1銅イオン(以下CLL という)とし゛〔
導入した。
When the aqueous solution becomes transparent, the P obtained in the above step
Put 20 sheets of AN film (approximately 8.5 g) into the water solution,
React in a boiling state for 1 to 8 hours, take out 4 sheets of boiled PAN film at each time, and add to water at 15℃.
It was washed in an ultrasonic cleaner for 5 minutes and then in running water for 1 hour. After that, it was vacuum dried at a temperature of 4 ohms, and cuprous ions (hereinafter referred to as CLL) were applied to the PAN film.
Introduced.

第1図はこの第2工程で得られたPANフィルムにつb
c、Cu Cl 3濃度を変化させたときの錯体化反応
時間に対する重量増加を測定した結果を示したものであ
る。第1図中の単位面積当シの重量増加W (mg/d
 )は次式よりめた。
Figure 1 shows the PAN film obtained in this second step.
c, The results of measuring the weight increase with respect to the complexation reaction time when the Cu Cl 3 concentration was changed are shown. Weight increase per unit area W (mg/d
) was calculated from the following formula.

W=:Wc−N。W=:Wc-N.

ただし、ilo:Cu の錯体化前のPANフィルムの
重量(mg/cm) wC:C1,lノ錯体化後(7)PANフィルムの重量
(mg/d) 第1図中、9印のものはQ、3 % CuCl、水溶液
・1印のもの1はり、5 % CuCg、水、J液、◎
印のものは1.04 CuCl!、水溶液、およびO印
のものは2.0%CuCl、水a夜に対応する。
However, the weight of the PAN film (mg/cm) before the complexation of ilo:Cu and the weight of the PAN film (mg/d) after the complexation of wC:C1,l. Q, 3% CuCl, aqueous solution/1 scale with 1 mark, 5% CuCg, water, J solution, ◎
The one marked is 1.04 CuCl! , aqueous solution, and those marked O correspond to 2.0% CuCl, water a night.

次に1第5工程とし゛(Cu を、老体とし′cjs人
したPANフィルムを還元し゛(PAN導電性フィルム
を得る方法につぃ゛〔説明する。
Next, in the first and fifth step, a method for obtaining a PAN conductive film (Cu is reduced to an aged PAN film) will be explained.

+ 上記工程で得たPAN−Cu4体フィルムを1チハイド
ロサルフアイトナトリウム塩の水溶液−中で5時間煮沸
し〔フィルム中のCLI f(還元した。
+ The PAN-Cu 4-body film obtained in the above step was boiled for 5 hours in an aqueous solution of 1-tihydrosulfite sodium salt [CLI f (reduced) in the film.

還元反応後、上記工程と同様に十分に水洗、乾燥し“〔
デシケータ中に保存し、導taフィルムを得た。
After the reduction reaction, thoroughly wash with water and dry as in the above step.
It was stored in a desiccator to obtain a conductive film.

第2図および第3図は錯体化反応後の各種鋼庁有量のP
ANフィルムにっ込゛C%還元時間と表面導電率および
体積導電率の関係を示したものである。第2図および第
5図に示したPANフィルム中の銅の含有量は常法によ
る原子吸光法に従っ゛〔測定した。
Figures 2 and 3 show various amounts of P in the Steel Authority after the complexation reaction.
This figure shows the relationship between the reduction time of C% in AN film, surface conductivity, and volume conductivity. The copper content in the PAN films shown in FIGS. 2 and 5 was measured according to a conventional atomic absorption method.

第2図および第3図中、・印のものは17チの銅含有量
のもの、()印のものは22チの銅含有量のもの、およ
び◎のものは28チの嗣含有璧のものに対応′する。ま
た得られたPAN導電性フィルムの表面導電率および体
積導電率はJ工5−C2525に準じ゛C測定した。ま
た、測定はいずれも30tで行った。
In Figures 2 and 3, the ones marked with * are those with a copper content of 17 Chi, the ones marked with () are those with a copper content of 22 Chi, and the ones with ◎ are those with a copper content of 28 Chi. correspond to something. Further, the surface conductivity and volume conductivity of the obtained PAN conductive film were measured according to J-Technical Engineering 5-C2525. Moreover, all measurements were performed at 30t.

第2図〜第5図から明らかなように、本発明の実施例で
得られたPANフィルムは十分な導電性を有するものが
得られCいる。
As is clear from FIGS. 2 to 5, the PAN films obtained in the examples of the present invention had sufficient electrical conductivity.

また、錯体化反応によりCu を吸着させたPANフィ
ルムの機械的特性を測定し、その結果を第1表に示した
。さらKJ!元処理したPAN導電1生フィルム1こつ
い′C機械的特性を測定し、その結果を第2表に示した
。なお、第1表の結果を示したPANフィルムは錯体化
反応時間を8時間としたものである。また、第2表の結
果を示したPAN導電性フィルムは1%のハイドロサル
ファイドナトリウム塩の水溶液を用い゛〔還元処理した
ものである。
In addition, the mechanical properties of the PAN film on which Cu was adsorbed by the complexation reaction were measured, and the results are shown in Table 1. Sara KJ! The mechanical properties of the pre-processed PAN conductive 1 raw film 1'C were measured and the results are shown in Table 2. Incidentally, the PAN film showing the results in Table 1 was one in which the complexation reaction time was 8 hours. Further, the PAN conductive films showing the results in Table 2 were subjected to reduction treatment using a 1% aqueous solution of sodium hydrosulfide salt.

第 1 表 第 2 表 第2表から明らかなように、本発明の実施例でイ:すら
れたに″AN導1:生フィルムについ〔)溝[戒的比質
の劣化は認められず、利用上何ら問題のない特性を示し
Cいる。
As is clear from Table 2, in the examples of the present invention, no deterioration of the quality was observed in the raw film. It exhibits characteristics that pose no problems in use.

次にこの発明にかかるポリアクリロニトリル導4性フィ
ルムの製造方法につい゛C1好適な具体的実施列を示せ
ば次のとおりである。
Next, preferred specific implementations of C1 for the method for producing a polyacrylonitrile conductive film according to the present invention are as follows.

PANフィルムとし゛〔は煮沸水中で10時間処理し、
l?Al(フィルム中のジメチルホルムアミドを完全に
除去したものを杓8g用いた。
PAN film [was treated in boiling water for 10 hours,
l? A ladle of 8 g of Al (from which dimethylformamide in the film had been completely removed) was used.

次に第2工程としC’3.5%のCuC1,水溶、夜中
Ccu+と反応させた。処理条件は以下のと、にりであ
る。
Next, in a second step, C'3.5% of CuC1, water-soluble, was reacted with Ccu+ overnight. The processing conditions are as follows.

CuC1: 6.53g Cu 鋼 : :S、09g Mace : 17.069 H!O: 1300m1 反応温度 : 煮沸 反応時間 : リ、5.1.2.および4時間錯体化反
応後、1晩流水中で洗浄し、さらに伍晋阪促浄器で約1
5分間洗浄し、そののち流水中で6時間洗浄し、50で
で真空乾燥した。
CuC1: 6.53g Cu steel: :S, 09g Mace: 17.069H! O: 1300m1 Reaction temperature: Boiling Reaction time: 5.1.2. After the complexation reaction for 4 hours, it was washed under running water overnight, and then washed with a Goshinsaka purifier for about 1 hour.
It was washed for 5 minutes, then washed under running water for 6 hours, and vacuum dried at 50°C.

第3工惺としC得られたPANフィルムを還元処理した
。この1!元処理は2.0係のハ・イドロサルファイト
ナトリウム1によつC行つた。処理条件は以下のとち・
りでちる。
The PAN film obtained in the third process was subjected to a reduction treatment. This one! The initial treatment was carried out with 1 part of sodium hydrosulfite of 2.0. The processing conditions are as follows.
Ridechiru.

ハイドロサルファイドナトリウム塩 : 26.09(
増縫分の5倍量ン HzO: 1300m/ 反応温度 、 煮沸 反応時間 二 10時間 反応後、約30分間超音イ1り洗浄器で洗浄し、さらに
流水中で1晩洗浄し、50′cで!′C,空乾燥した。
Hydrosulfide sodium salt: 26.09 (
After 10 hours of reaction, wash in an ultrasonic washer for about 30 minutes, then wash under running water overnight, and wash at 50'C. in! 'C, air dried.

得られたPAN4電性フィルムは上記した実施例と同様
、良好な導磁性と1浅域的強度を示した。
The obtained PAN4 conductive film exhibited good magnetic conductivity and shallow strength as in the above-mentioned examples.

なお、上記した実/ii例においC1還元処理をハイド
ロナルファイトナトリウム塩によシ行った75ζこの・
・よかぶどう塘、金)眞稍、帥5−ト鉄、酸性亜疏酸ナ
トリウム、ヒドロキシルアミン、グルコース、フルフラ
ールなどが利用できる。
In addition, this 75ζ in which the C1 reduction treatment was performed using hydronalphite sodium salt in Example ii above.
・Yokabudo Tong, Kin) Shinden, 5-ferric iron, acidic sodium succinate, hydroxylamine, glucose, furfural, etc. can be used.

また、本発明の製造方法により得られたPAN導電性フ
ィルムについC1室温〜160Cにおける表面導1率(
σ8)の温度依存性を測定したところ、第4図に示すよ
うに、5Vを印加した状態でI Q Q ′c付近に転
移が現われた。
Furthermore, the surface conductivity (C1 at room temperature to 160C) of the PAN conductive film obtained by the production method of the present invention (
When the temperature dependence of σ8) was measured, as shown in FIG. 4, a transition appeared near I Q Q 'c when 5 V was applied.

以上の実施例から明らかなように、この発明にかかるポ
リアクリロニトリル導電性フィルムの製造方法によれば
、ポリアクリロニトリルフィルムにCuを錯体とし・C
導入し、その後還元することによつ゛C導電性を付与し
たものでちり、ポリアクリロニトリルフィルムにCuを
錯体とし°C導入するだめの反応液の濃度および反応時
間を調整することによシ、種々の導電率を有する導磁性
フィルムを製置することができ、簡単な処理によつ゛〔
導電性フィルムが容易に得られ、このような導電性フィ
ルムが要求される分野に有用な製造方法を提供すること
ができる。
As is clear from the above examples, according to the method for producing a polyacrylonitrile conductive film according to the present invention, Cu is complexed into a polyacrylonitrile film.
C conductivity is imparted to the polyacrylonitrile film by introducing C into a complex and then reducing it. It is possible to fabricate a magnetically conductive film with a conductivity of
A conductive film can be easily obtained, and a manufacturing method useful in fields requiring such a conductive film can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はPANフィルムについて、CuCe2濃度を変
化させたときの錯体化反応時間に対する重量増加の測定
結果を示す図、第2図、第6図は舘体化反応後の各種銅
含有敬のPANフィルムについ゛C1還元時間と表面導
電率および体積導電率の関係をそれぞれ示しだ図、第4
図は表面導電率(σ8)の温度依存性を示した図である
。 特許出願人 株式会社 村山製作所 用 1 図 傭イ参lb万し;時間[hrl 攬Z図 1元時開(hr) 腿つ図 1t峙r恒り、) 燥4図 シ肱(0c) 手続補正計 +VJrn 59412月20 日 2、発明の名称 ポリアクリロニトリル導電性フィルムの製造方法3、 
htii1三をする名 昭第159年1月61日(発送日)
Figure 1 shows the measurement results of the weight increase with respect to the complexation reaction time when the CuCe2 concentration was changed for PAN films. Figure 4 shows the relationship between C1 reduction time, surface conductivity, and volume conductivity for the film.
The figure shows the temperature dependence of surface conductivity (σ8). For Patent Applicant Murayama Seisakusho Co., Ltd. 1. Time [hrl. Total + VJrn 594 December 20th 2, Title of invention Method for producing polyacrylonitrile conductive film 3,
January 61, 159th Meisho era (shipment date)

Claims (1)

【特許請求の範囲】[Claims] ポリアクリロニトリルフィルムにtK1銅−fオンを錯
体とし′で導入し、その後還元することによつ゛C導電
性を付与することを特徴とするポリアクリロニトリル導
電性フィルムの製造方法。
1. A method for producing a polyacrylonitrile conductive film, which comprises introducing tK1 copper-f-one as a complex into the polyacrylonitrile film, and then reducing the film to impart C conductivity.
JP18749883A 1983-10-05 1983-10-05 Method of producing polyacrylonitrile conductive film Granted JPS6079604A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18749883A JPS6079604A (en) 1983-10-05 1983-10-05 Method of producing polyacrylonitrile conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18749883A JPS6079604A (en) 1983-10-05 1983-10-05 Method of producing polyacrylonitrile conductive film

Publications (2)

Publication Number Publication Date
JPS6079604A true JPS6079604A (en) 1985-05-07
JPH0379801B2 JPH0379801B2 (en) 1991-12-20

Family

ID=16207110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18749883A Granted JPS6079604A (en) 1983-10-05 1983-10-05 Method of producing polyacrylonitrile conductive film

Country Status (1)

Country Link
JP (1) JPS6079604A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155138A (en) * 1971-07-29 1977-12-23 Kollmorgen Corp Production method of metallized products
JPS5638002A (en) * 1979-09-05 1981-04-13 Nippon Telegr & Teleph Corp <Ntt> Manufacture for flat type optical cable
JPS5743977A (en) * 1980-07-04 1982-03-12 Bayer Ag Surface activation for non-electric metallization
JPS5943594A (en) * 1982-09-03 1984-03-10 大日本印刷株式会社 Conductive circuit sheet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52155138A (en) * 1971-07-29 1977-12-23 Kollmorgen Corp Production method of metallized products
JPS5638002A (en) * 1979-09-05 1981-04-13 Nippon Telegr & Teleph Corp <Ntt> Manufacture for flat type optical cable
JPS5743977A (en) * 1980-07-04 1982-03-12 Bayer Ag Surface activation for non-electric metallization
JPS5943594A (en) * 1982-09-03 1984-03-10 大日本印刷株式会社 Conductive circuit sheet

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Publication number Publication date
JPH0379801B2 (en) 1991-12-20

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