JPS6077470A - Diaphragm type semiconductor pressure sensor - Google Patents
Diaphragm type semiconductor pressure sensorInfo
- Publication number
- JPS6077470A JPS6077470A JP18540383A JP18540383A JPS6077470A JP S6077470 A JPS6077470 A JP S6077470A JP 18540383 A JP18540383 A JP 18540383A JP 18540383 A JP18540383 A JP 18540383A JP S6077470 A JPS6077470 A JP S6077470A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- resistors
- pressure sensitive
- diaphragm
- sensitive resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 239000012670 alkaline solution Substances 0.000 abstract description 2
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 230000001788 irregular Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
本発明はピエゾ抵抗効果全利用したダイアフラム型半導
体圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a diaphragm type semiconductor pressure sensor that fully utilizes the piezoresistive effect.
従来この種の圧力センザには第１図！ａｌ ＋ （ｂｔ
の平面図と側面図に示す構造のものがある。ｎ型シリコ
ン基板１の中央部が機械的研摩または化学的エツチング
等によＶ薄膜化されたダイアフラム２が形成され、この
ダイアフラム２上に例えば硼素の選択拡散あるいはイオ
ン注入によって４個の感圧抵抗３，４，５．６が形成さ
れている。Conventionally, this type of pressure sensor is shown in Figure 1! al + (bt
There is one with the structure shown in the plan view and side view. A diaphragm 2 is formed in the center of an n-type silicon substrate 1 by mechanical polishing or chemical etching, and four pressure-sensitive resistors are formed on this diaphragm 2 by, for example, selective diffusion of boron or ion implantation. 3, 4, 5.6 are formed.
感圧抵抗３ｔ４＋５．６ｆｔ第２図に示す様にアルミ配
線等によりブリッジ接続し定電圧源７または定電流源８
で駆動すれば、出力端子９，１０間に印加圧力に比例し
た電圧出力Ｖｏが得られる。第１図に示した感圧抵抗配
（倚は（１，００）面ｎ型シリコン基板を用いた場合の
典型的な例で、ダイアフラム２Ｖ′ｃ裏面から圧力を印
加した場合、感圧抵抗３．６の抵抗値は減少し、感圧抵
抗４，５の抵抗値は増大する。従ってブリッジ回路の出
方端子９の電位は上昇し、出力端子１ｏの１４１位は下
降してＶｏ なる出力電圧が発生する。Pressure-sensitive resistor 3t4+5.6ft As shown in Figure 2, bridge-connected with aluminum wiring etc. to constant voltage source 7 or constant current source 8.
When driven by the voltage, a voltage output Vo proportional to the applied pressure between the output terminals 9 and 10 can be obtained. The pressure-sensitive resistor arrangement shown in Fig. 1 is a typical example using a (1,00)-plane n-type silicon substrate. The resistance value of .6 decreases, and the resistance value of pressure-sensitive resistors 4 and 5 increases.Therefore, the potential of the output terminal 9 of the bridge circuit increases, and the 141st position of the output terminal 1o decreases, resulting in an output voltage of Vo. occurs.
然しなからこの様な構成の圧力センナでは製造時の目合
せ誤差によって生じるダイアフラムと感圧抵抗の位置ず
れや、膜厚の不均一性により圧力−出力電圧特性の直線
性が劣化する。例えばダイアフラム２が第１図の破線で
示す設計中心から一点鎖線で丞す位置にずれた場合、各
感圧抵抗の受ける応力が非対称となる。その結果各感圧
抵抗の抵抗変化率が不均衡となり、出力特注の直線性が
劣化する。特に感圧抵抗３，６は中心からの距離が大き
く異なって来て、しかもダイアフラム周辺部では応力変
化が急激であるので印加圧力に対する抵抗変化率は著し
く不均衡となり、出力の直線性が大きく損われる。一方
、ダイアフラム２が設計中心にあっても膜厚の不均一性
があると各感圧抵抗の感度が不均一となる。％に圧力感
度は膜厚の２乗に反比例し、微少な膜厚差でも感度変化
は太きい。前記位置ずれはマスクの機械的位置合せイ漬
度で制限され数μｍ程度は避けられない。また膜〜の不
均一性はエツチング速度のばらつきにより生じ、これを
無くすことは製造技術上非常に困難である。However, in a pressure sensor having such a configuration, the linearity of the pressure-output voltage characteristic deteriorates due to misalignment between the diaphragm and pressure-sensitive resistor caused by alignment errors during manufacturing, and non-uniformity in film thickness. For example, if the diaphragm 2 is shifted from the design center indicated by the broken line in FIG. 1 to the position indicated by the dashed line, the stress applied to each pressure-sensitive resistor becomes asymmetrical. As a result, the resistance change rate of each pressure-sensitive resistor becomes unbalanced, and the linearity of the output customization deteriorates. In particular, the pressure-sensitive resistors 3 and 6 have greatly different distances from the center, and the stress changes rapidly around the diaphragm, so the rate of change in resistance with respect to the applied pressure becomes significantly unbalanced, and the linearity of the output is greatly impaired. be exposed. On the other hand, even if the diaphragm 2 is located at the center of the design, if there is non-uniformity in film thickness, the sensitivity of each pressure-sensitive resistor will become non-uniform. %, the pressure sensitivity is inversely proportional to the square of the film thickness, and even a small difference in film thickness causes a large change in sensitivity. The positional deviation is limited by the degree of mechanical alignment of the mask, and is unavoidable to be on the order of several μm. Further, non-uniformity of the film is caused by variations in etching rate, and it is extremely difficult to eliminate this in terms of manufacturing technology.
これらの直線性の劣化を改善する為に第３図に示す様に
感圧抵抗３，６に隣接して感圧抵抗３′。In order to improve these deteriorations in linearity, a pressure sensitive resistor 3' is installed adjacent to the pressure sensitive resistors 3 and 6 as shown in FIG.
６′を形成し、感圧抵抗３．３’、４．５か感圧抵抗４
、５ 、６ 、６’かのいづれかよい方の組合せでブ
リッジを構成するものが提案されている。6', pressure sensitive resistor 3.3', 4.5 or pressure sensitive resistor 4
, 5, 6, and 6' have been proposed to constitute a bridge.
しかし、感圧抵抗４，５と感圧抵抗３，３′あるいは６
，６′との間の抵抗変化率の不均衡は改善されていない
。However, pressure sensitive resistors 4, 5 and pressure sensitive resistors 3, 3' or 6
, 6' has not been improved.
あるいは他の改善提案として第４図及び第５図に示すも
の（特願昭５８−００３８１２）がある。これは（１１
０）面ｎ型シリコン基板を用いた例で。Another improvement proposal is shown in FIGS. 4 and 5 (Japanese Patent Application No. 58-003812). This is (11
0) An example using a plane n-type silicon substrate.
感圧抵抗１１と１１′および感圧抵抗１４と１４′は縦
方向の感圧抵抗である。感圧抵抗１２と１２′および感
圧抵抗１３と１３’は横方向の感圧抵抗である。これら
の感圧抵抗を第５図に示されている様なブリッジ回路に
接続すると１例えば位置ずれや膜厚の不均一にエフ感圧
抵抗１１及び１１′が感圧抵抗１４及び１４′に比べて
感度が低下しても感圧抵抗１１と１４及び感圧抵抗１１
′と１４′を直列接続してブリッジ回路の一辺を構成し
ているので、不均一が平均化され直線性が改善される。Pressure sensitive resistors 11 and 11' and pressure sensitive resistors 14 and 14' are longitudinal pressure sensitive resistors. Pressure sensitive resistors 12 and 12' and pressure sensitive resistors 13 and 13' are lateral pressure sensitive resistors. When these pressure-sensitive resistors are connected to a bridge circuit as shown in FIG. Pressure sensitive resistors 11 and 14 and pressure sensitive resistor 11
' and 14' are connected in series to form one side of the bridge circuit, so non-uniformity is averaged out and linearity is improved.
しかしながら感圧抵抗をイオン注入等で形成する場合、
各感圧抵抗の距離が離れていると注入量の不均一により
抵抗値がばらつき完全に平均化するのは困難である。However, when forming a pressure sensitive resistor by ion implantation, etc.
If the distances between the pressure sensitive resistors are far apart, the resistance values will vary due to non-uniformity in the amount of injection and it is difficult to completely average them out.
本発明の目的は、上記欠点を解消し、感圧抵抗とダイア
フラムとの位置ずれや膜厚の不均一性等に帰因する圧力
感度の非直線性を除去し得るダイアフラム型半導体圧力
センサを提供することにある。An object of the present invention is to provide a diaphragm-type semiconductor pressure sensor that can eliminate the above-mentioned drawbacks and eliminate non-linearity in pressure sensitivity caused by misalignment between a pressure-sensitive resistor and a diaphragm, non-uniformity of film thickness, etc. It's about doing.
本発明のダイアフラム型半導体圧力センサは。The diaphragm type semiconductor pressure sensor of the present invention is:
ダイアフラム上の第１の端部に４個以上の感圧抵抗１ｃ
隣接して配置した第１の感圧抵抗群と、前記第１の端部
と前記ダイアフラムの中心に関して＃１は直角を成す前
記ダイアフラム上の第２の端部に４個以上の感圧抵抗を
隣接して配置した第２の感圧抵抗群と、前記第１の感圧
抵抗群から２個以上選んで直列接続した第１の狭路、前
記第２の感圧抵抗群から２個以上選んで直列接続した第
２の４支路、前記第１の感圧抵抗群から別の２個以上を
選んで直列接続した第３の狭路、前記第２の感圧抵抗群
から別の２個以上を選んで直列接続した第４の枝路を順
次接続して構成したブリッジ回路とを有すること′（ｉ
ｌ′特徴とする。4 or more pressure sensitive resistors 1c at the first end on the diaphragm
A first group of pressure sensitive resistors arranged adjacent to each other and four or more pressure sensitive resistors at a second end on the diaphragm, #1 forming a right angle with respect to the first end and the center of the diaphragm. a second pressure-sensitive resistor group arranged adjacent to each other, a first narrow path in which two or more pressure-sensitive resistors are selected from the first pressure-sensitive resistor group and connected in series, and two or more pressure-sensitive resistors are selected from the second pressure-sensitive resistor group. a second four-branch path connected in series with two or more selected pressure-sensitive resistors from the first pressure-sensitive resistor group; a third narrow path with two or more selected pressure-sensitive resistors connected in series; and a bridge circuit constituted by sequentially connecting fourth branch circuits selected from the above and connected in series' (i
l' is characterized.
以下１本発明の実施例を示す肉面を参照して説明する。The following will explain one embodiment of the present invention with reference to the meat side.
第６図、第７図は本発明を（１００）面ｎ形シリコン基
板２１を用いた圧力センサに適用した場合の一実施例で
ある。感圧抵抗２３．２３’、２４゜２４’ 、２５．
２５’ 、２６．２６’をダイアフラム２２の輪部に拡
散またはイオン注入で形成する。感圧抵抗２３．２３’
、２５．２５’ 、２４゜２４’ 、２６．２６’は
いづれも（：１１０．＞軸方向に配置しである。これら
の感圧抵抗を第７図に示す様にアルミ配置等で接続しブ
リッジ回路を構成する。横方向の感圧抵抗は感圧抵抗２
３と２５′を直列接続したものと感圧抵抗２３と ２５
を直列接続したものとから形成されている。同様に縦方
向の感圧抵抗は感圧抵抗２４と２６′を直列接続したも
のと感圧抵抗２４′と２６を直列接続したものとから形
成されている。ダイアフラム加工は例えばアルカリ溶液
による異方性エツチングで行う。FIGS. 6 and 7 show an embodiment in which the present invention is applied to a pressure sensor using a (100) plane n-type silicon substrate 21. FIG. Pressure sensitive resistor 23.23', 24°24', 25.
25', 26, and 26' are formed in the ring of the diaphragm 22 by diffusion or ion implantation. Pressure sensitive resistor 23.23'
, 25.25', 24°24', and 26.26' are all arranged in the axial direction (:110.>).These pressure sensitive resistors are connected with aluminum arrangement etc. as shown in Fig. 7. Configure a bridge circuit.The horizontal pressure-sensitive resistor is pressure-sensitive resistor 2.
3 and 25' connected in series and pressure sensitive resistors 23 and 25
connected in series. Similarly, the pressure sensitive resistors in the vertical direction are formed by pressure sensitive resistors 24 and 26' connected in series and pressure sensitive resistors 24' and 26 connected in series. Diaphragm processing is performed, for example, by anisotropic etching using an alkaline solution.
次に本実施例の効果について説明する。ダイアフラム位
置が目合せ誤差によＶ第６図の一点鎖線で示す様にずれ
た場合、各感圧抵抗はダイアフラム中心からの距離が異
なり、前述の様に抵抗変化率が不均衡となる。第６図の
例では感圧抵抗２４゜２４′は対応１−る他の感圧抵抗
２６．２６’よりダイアフラム中心からの距離が大きく
なるので印加圧力に対する抵抗変化率が増大する。しか
し感圧抵抗２４と２６′及び２４′と２６とをそれぞれ
直列接続してブリッジ回路の相対する二辺の抵抗として
いるので抵抗変化率の不均衡が解消される。感圧抵抗２
３．２３’ 、２５．２５’に関しても同様の効果が得
られる。また感圧抵抗２３゜２３’ 、２５．２５’及
び感圧抵抗２４．２４’。Next, the effects of this embodiment will be explained. If the diaphragm position deviates as shown by the dashed-dotted line in FIG. 6 due to alignment error, each pressure-sensitive resistor has a different distance from the center of the diaphragm, and the rate of change in resistance becomes unbalanced as described above. In the example of FIG. 6, the pressure sensitive resistor 24.degree. 24' has a greater distance from the center of the diaphragm than the corresponding pressure sensitive resistors 26, 26', so the rate of change in resistance with respect to applied pressure increases. However, since the pressure-sensitive resistors 24 and 26' and 24' and 26 are connected in series to serve as resistors on two opposing sides of the bridge circuit, the imbalance in the rate of resistance change is eliminated. pressure sensitive resistor 2
Similar effects can be obtained with respect to 3.23' and 25.25'. Also, pressure sensitive resistors 23°23', 25.25' and pressure sensitive resistors 24.24'.
２６．２６’は隣接して配向しであるので、不純物濃度
の場所による不均一が少なく、抵抗値の均一性が良い。Since 26 and 26' are oriented adjacent to each other, there is little non-uniformity in impurity concentration depending on the location, and the uniformity of the resistance value is good.
更にタイアフラム厚の場所による不均一に帰因する抵抗
率変化の不均衡も解消され。Furthermore, the imbalance in resistivity change caused by uneven tire flam thickness depending on location is also eliminated.
極めて直線性の良い半導体圧力センサが得られる。A semiconductor pressure sensor with extremely good linearity can be obtained.
次に感圧抵抗を３分割した場合の本発明の実施例につい
て説明する。第８図、第９［＊Ｉはそれぞれ第２の実施
例を示す感圧抵抗の配置図及び接続図である。例えば感
圧抵抗３３．３５’ 、３３”を直列接続したものと感
圧抵抗３５．３３’ 、３５″を直列接続したものをそ
れぞれブリッジ回路の相対する二辺とする。同様に感圧
抵抗３４．３６’。Next, an embodiment of the present invention in which the pressure sensitive resistor is divided into three parts will be described. FIGS. 8 and 9 [*I are a layout diagram and a connection diagram of a pressure-sensitive resistor, respectively, showing the second embodiment. For example, pressure sensitive resistors 33.35' and 33'' connected in series and pressure sensitive resistors 35.33' and 35'' connected in series are respectively used as two opposing sides of the bridge circuit. Similarly pressure sensitive resistor 34.36'.
３４″と感圧抵抗３６．３４’、３６”をそれぞれブリ
ッジ回路の相対する二辺とする。これらの感圧抵抗は極
めて接近して配いされているので各抵抗値のばらつきは
少く、更に第１の実施例と同じく互に対向する位置の感
圧抵抗を組合せているので、目合せずれの影響や膜厚の
不均一による直線性の劣化を解消できる。なお、３１は
ｎ型シリ：Ｆン基板１３２はダイヤフラムである。34'' and pressure sensitive resistor 36. 34' and 36'' are two opposing sides of the bridge circuit, respectively. These pressure-sensitive resistors are arranged very close together, so there is little variation in each resistance value, and as in the first embodiment, pressure-sensitive resistors at opposing positions are combined, so there is no misalignment. It is possible to eliminate the deterioration of linearity due to the influence of film thickness and uneven film thickness. Note that 31 is an n-type silicon:F substrate 132 is a diaphragm.
以上、（１００）面ｎ型シリコン基板を用いた本発明の
半導体圧力センサの２つの実施例を挙げて説明した。し
かしながらシリコン基板の導電型及び面方向また感圧抵
抗の導電型、軸方向、配置を変更してもよい。更にダイ
アフラムの形状に関しても円形や正方形に限定しなくて
もよく、長方形や楕円形であっても良い。ブリッジ回路
の構成に関しても各辺の抵抗を２分割及び３分割して直
列接続する構成で説明したが、４分割あるいはそれ以上
に分割して直列接続することも可能である。Two embodiments of the semiconductor pressure sensor of the present invention using a (100) plane n-type silicon substrate have been described above. However, the conductivity type and planar direction of the silicon substrate and the conductivity type, axial direction, and arrangement of the pressure-sensitive resistor may be changed. Furthermore, the shape of the diaphragm is not limited to circular or square, but may be rectangular or elliptical. Regarding the configuration of the bridge circuit, the resistor on each side is divided into two and three parts and connected in series, but it is also possible to divide the resistors into four or more parts and connect them in series.
上記説明から明らかな様に本発明によればブリッジ各辺
の抵抗値及び抵抗変化率が均一で非直線誤差の少ない半
導体圧力センサが得られる。As is clear from the above description, according to the present invention, it is possible to obtain a semiconductor pressure sensor in which the resistance value and resistance change rate on each side of the bridge are uniform and nonlinear errors are small.
第１図（ａｌ 、 （ｂ）は従来の半導体圧力センサを
例示する平面図、側面図、第２図は従来例を示す回路１
図、第３図は他の従来例を示す平面図、第４図。
第５図りそれぞれさらに他の従来例を示す平面図。
回路図、第６図、第７図はそれぞれ本発明の第１の実施
例を示す平面図、動１路図、第８図、第９図はそれぞれ
本発明の第２の実施例を示す平面図３７・・・・・・ダ
イアフラム＋ ３１４１５１６１ａ”＋６’ 、１１．
１１’ 、１２．１２’ 、１３．１３’。
１４．１４’ ３３．３３’ 、３３“、３４．３４’
。
３４“、３５．３５’ 、３５ ”、３６．３６’ 。
３６，２３．２３’ 、２４．２４’ 、２５．２５’
。
２６．２６’７・・・・・・感圧抵ｔｒｉ、、 ７・・
・・・・知゛電圧源。
８・・・・・・定電流源、９，１．０・・・・・・出力
端子。
第１ 図
第２図
第４霞Figures 1 (al and b) are a plan view and a side view illustrating a conventional semiconductor pressure sensor, and Figure 2 is a circuit 1 illustrating a conventional example.
FIG. 3 is a plan view showing another conventional example, and FIG. 4 is a plan view showing another conventional example. The fifth figure is a plan view showing still another conventional example. The circuit diagram, FIGS. 6 and 7 are plan views showing the first embodiment of the present invention, and the circuit diagrams and FIGS. 8 and 9 are plan views showing the second embodiment of the invention, respectively. Figure 37...Diaphragm+31415161a"+6', 11.
11', 12.12', 13.13'. 14.14'33.33',33",34.34'
. 34", 35.35', 35", 36.36'. 36, 23.23', 24.24', 25.25'
. 26.26'7...pressure sensitive resistor tri,, 7...
... Known voltage source. 8... Constant current source, 9, 1.0... Output terminal. Figure 1 Figure 2 Figure 4 Haze
Claims (1)
接して配置した第１の感圧抵抗群と、前記第１の端部と
前記ダイアフラムの中心に関してほぼ直角を成す前記ダ
イアフラム上の第２の端部に４個以上の感圧抵抗ｘｈ接
して配置した第２の感圧抵抗群と、前記第１の感圧抵抗
群から２個以上選んで直列接続した第１の波路、前記第
２の感圧抵抗７（［から２個以上選んで直列接続した第
２の枝路、前記第１の感圧抵抗群から別の２個以上を選
んで直列接続した第３の狭路、前記第２の感圧抵抗群か
ら別の２個以上を選んで直列接続した第４の岐路を順次
接続して構成したブリッジ回路と金有することを特徴と
するダイアフラム型半導体圧力センサ。a first pressure-sensitive resistor group having four or more pressure-sensitive resistors arranged adjacent to each other at a first end on the diaphragm; and a first pressure-sensitive resistor group on the diaphragm forming a substantially right angle with respect to the first end and the center of the diaphragm. a second pressure-sensitive resistor group arranged in contact with four or more pressure-sensitive resistors xh at the second end thereof, and a first wave path in which two or more pressure-sensitive resistors selected from the first pressure-sensitive resistor group are connected in series; A second branch path in which two or more pressure-sensitive resistors are selected from the second pressure-sensitive resistor 7 and connected in series; , a diaphragm type semiconductor pressure sensor comprising a bridge circuit configured by sequentially connecting two or more pressure sensitive resistors selected from the second pressure sensitive resistor group and connected in series, and a fourth branch circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18540383A JPS6077470A (en) | 1983-10-04 | 1983-10-04 | Diaphragm type semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18540383A JPS6077470A (en) | 1983-10-04 | 1983-10-04 | Diaphragm type semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077470A true JPS6077470A (en) | 1985-05-02 |
| JPH0473304B2 JPH0473304B2 (en) | 1992-11-20 |
Family
ID=16170178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18540383A Granted JPS6077470A (en) | 1983-10-04 | 1983-10-04 | Diaphragm type semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077470A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1110067A2 (en) * | 1998-08-21 | 2001-06-27 | Motorola, Inc. | Sensor with diaphragm and a plurality of switchable transducers to hit the edge |
| US6424014B2 (en) | 2000-02-25 | 2002-07-23 | Oki Electric Industry Co,Ltd. | Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength |
| FR2820201A1 (en) * | 2001-01-31 | 2002-08-02 | Denso Corp | DYNAMIC QUANTITY SENSOR WITH SEMICONDUCTOR |
| JP2009300197A (en) * | 2008-06-12 | 2009-12-24 | Alps Electric Co Ltd | Semiconductor pressure sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54162492A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Semiconductor pressure transducer |
| JPS5524273A (en) * | 1978-08-11 | 1980-02-21 | Mitsubishi Heavy Ind Ltd | Check valve |
-
1983
- 1983-10-04 JP JP18540383A patent/JPS6077470A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54162492A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Semiconductor pressure transducer |
| JPS5524273A (en) * | 1978-08-11 | 1980-02-21 | Mitsubishi Heavy Ind Ltd | Check valve |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1110067A2 (en) * | 1998-08-21 | 2001-06-27 | Motorola, Inc. | Sensor with diaphragm and a plurality of switchable transducers to hit the edge |
| EP1110067A4 (en) * | 1998-08-21 | 2001-10-24 | Motorola Inc | Pressure sensor and method of forming the same |
| US6424014B2 (en) | 2000-02-25 | 2002-07-23 | Oki Electric Industry Co,Ltd. | Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength |
| FR2820201A1 (en) * | 2001-01-31 | 2002-08-02 | Denso Corp | DYNAMIC QUANTITY SENSOR WITH SEMICONDUCTOR |
| JP2002373991A (en) * | 2001-01-31 | 2002-12-26 | Denso Corp | Semiconductor dynamic quantity sensor |
| DE10203631B4 (en) * | 2001-01-31 | 2009-11-19 | DENSO CORPORATION, Kariya-shi | Semiconductor sensor for a dynamic size |
| JP2009300197A (en) * | 2008-06-12 | 2009-12-24 | Alps Electric Co Ltd | Semiconductor pressure sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473304B2 (en) | 1992-11-20 |
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