JPS6074486A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
JPS6074486A
JPS6074486A JP58181285A JP18128583A JPS6074486A JP S6074486 A JPS6074486 A JP S6074486A JP 58181285 A JP58181285 A JP 58181285A JP 18128583 A JP18128583 A JP 18128583A JP S6074486 A JPS6074486 A JP S6074486A
Authority
JP
Japan
Prior art keywords
semiconductor light
refractive surfaces
emitting device
stem
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58181285A
Other languages
Japanese (ja)
Inventor
Senya Kita
北　仙也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58181285A priority Critical patent/JPS6074486A/en
Publication of JPS6074486A publication Critical patent/JPS6074486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE:To prevent a conductive bonding agent from outflowing to refractive surfaces when the title light-emitting element is mounted by a method wherein a rise part having a vertical face is respectively provided between the mounting face and the refractive surfaces. CONSTITUTION:A rise part 16 having a vertical face is respectively provided between a mounting face 12 and refractive surfaces 15a. Therefore, even though a solder is kept liquefied at a high temperature when an LED pellet 14 is adhered, the soldering paste, which tries to outflow from the mounting face 12, is obstructed to outflow by the rise parts 16 and is not allowed to creep up along the refractive surfaces 15a. Accordingly, there is no possibility that the refractive surfaces 15a are soiled, thereby enabling to prevent it for the reflection efficiency of the title device to decrease.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体発光装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor light emitting device.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

第１図は従来の半調（体発光装置の構造を示すものであ
る。同図において、１は例えば鉄で形成されアノード電
極となるステムである。このステム１のマウント面２に
は導電性接着層例えば半田層３によりＬＥＤペレット４
のアノード側が接着されている。ステム１には反射面５
ａを有する反射都５が設けられ、この反射面５ａにより
上記ＬＥＤ−２レット４が欺り囲まれている。反射面５
ａには光沢金めつきが加ｉされでいる。ＬＥＤ被レッし
４のカソード側はＪ？ンデイングワイヤ６を介してステ
ムｌをＬ’ｉ’　ｉｉｎ　シて設りられたカソード電極
７の一嬬都に１′入続されている。このカソード電極７
とヌテムノとは絶縁物例えはガ゛ラス８により絶縁され
ている。Figure 1 shows the structure of a conventional half-tone (body light emitting device). In the figure, 1 is a stem made of iron, for example, and serves as an anode electrode. The mounting surface 2 of this stem 1 has a conductive material. LED pellets 4 are formed by an adhesive layer such as a solder layer 3.
The anode side of is glued. Reflective surface 5 on stem 1
A reflective surface 5 having a surface area 5a is provided, and the LED-2 let 4 is deceptively surrounded by this reflective surface 5a. Reflective surface 5
A has been added with glossy gold plating. Is the cathode side of LED covered 4 J? L'i' iin is connected to one end of the cathode electrode 7 provided by the stem l through the connecting wire 6. This cathode electrode 7
and Nutemno are insulated by an insulator, for example glass 8.

上記半］Ｆ１体発光装置において１・ま、Ｌ　Ｅ　Ｊｕ
ｌ−２レツト４をマウン）　ｔｋｉ　、？に接着する際
、半１１１を１５０℃、す、上の筒部に溶かして乱箱さ
せるようになっている。[Half of the above] In the F1 body light emitting device, 1・Ma, L E Ju
mount l-2 let 4) tki,? When adhering to the top, half 111 is melted at 150°C to the upper cylinder part to form a random box.

しかしながら、従来、マウント面２は５．１７坦になっ
ており、このマウント面２かもｌｌ′！接反牙１１０１
５ａが立−ヒがっているため、反射面５；ＩＫ高温の半
ＩＴ：１−２−ストが這い上がり、反射面５ａを汚して
しまうことがあった。このため、反射面５ａの反射効率
が低下、すなわち発光効率が低下するという欠点があっ
た。However, conventionally, the mounting surface 2 has been flattened by 5.17 mm, and this mounting surface 2 may be ll'! Repulsion fang 1101
Since 5a is standing up, the high-temperature IK half-IT:1-2-st may creep up on the reflective surface 5 and stain the reflective surface 5a. For this reason, there was a drawback that the reflection efficiency of the reflective surface 5a was reduced, that is, the luminous efficiency was reduced.

〔発明の目的〕[Purpose of the invention]

本発明は上記実情に鑑みてなされたもので、その目的は
、半導体発光素子のマウント時に導電性接着材料の反射
面への流出を防止し、発光効率の向上した半導体発光装
置を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to provide a semiconductor light emitting device with improved luminous efficiency by preventing conductive adhesive material from flowing out onto a reflective surface when mounting a semiconductor light emitting element. be.

〔発明の概要〕[Summary of the invention]

本発明は、ステムと、このステム上に設けられた導電性
接着層と、この心電性接着層上に設けられた半導体発光
素子と、この半導体発光素子の周辺を取り囲む反射面を
有−ｒる反射体と、前記マウント面の周縁部と前記反則
面の下端部との間に設けられた立上がり都を具備した半
導体発光装置であり、前記半導体発光素子のマウント時
に高温で液状になった導電性接着層の１料の前記反射面
への流出を前記立上がり都により防止するものである。The present invention has a stem, a conductive adhesive layer provided on the stem, a semiconductor light emitting element provided on the electrocardiographic adhesive layer, and a reflective surface surrounding the semiconductor light emitting element. A semiconductor light-emitting device is provided with a reflector, and a rising edge provided between the peripheral edge of the mounting surface and the lower end of the non-conforming surface, and the semiconductor light-emitting device includes a conductive material that becomes liquid at high temperature when the semiconductor light-emitting element is mounted. The rising cap prevents the component of the adhesive layer from flowing out onto the reflective surface.

〔発明の実施例〕 以下、図面を診照して本発明の一実施例を説明する。第
２図において、１ノは例えは鉄で形成されアノード電極
となるステムである。このステム１１のマウント面１２
には導゛１Ｄ；性接着層例えば半田層１３によりＬ　Ｅ
　Ｉ）−１’レツト１４のアノード側が接着されている
。ステム１ノには反射面１５ａをηする反射部１５が設
けら牙１、この反射面１５８により」二記Ｌ　１号１）
　Ａ？レット１４が月又り囲まれている。反１；Ｉｔ　
ｉ用１５ａＶこは〕し沢めっきが施されている。この反
」４、↑面１５ａの下端部とマウント面１２の周縁を耶
との間には月１直面を有゛ｆる立」二がり川Ｓ１６が設
けられている。[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In FIG. 2, numeral 1 is a stem made of iron, for example, and serves as an anode electrode. Mount surface 12 of this stem 11
For example, a solder layer 13 leads to L E
I) The anode side of the -1'let 14 is glued. The stem 1 is provided with a reflective part 15 that reflects the reflective surface 15a.
A? Lett 14 is surrounded by a moon. Anti-1; It
15aV for i] Shizawa plating is applied. Between the lower end of the surface 15a and the periphery of the mount surface 12, there is provided a two-way river S16 having a horizontal plane.

また、Ｌ　ｐ：　Ｉ）−４’レツト１４のカソード側は
＋４？ンプ′イングワイヤ１７を介してスフーム１ノを
一１通して設けられたカソード電極１８の−”ｉＴｌ：
ｊｌ）にｊ４続されている。このカソード電１．ｊＪｉ
　Ｉ　８とステム１１とはに９色縁物イ列えはガラス１
９により絶縁されている。Also, the cathode side of Lp:I)-4'let 14 is +4? -”iTl:
jl) is connected by j4. This cathode voltage 1. jJi
I 8 and stem 11 have 9 color trims and glass 1
9.

上記構造の半導体発光装置においては、マウント面１２
と反射面１５ａとの間に垂−而をイｊする立」二かり？
ηＳ１６が設けられているため、ＬＥＤ−′Ｐ！レット
１４の接看時、半ｌ」を高温にして液状にしても、マウ
ント面１２から流出しようとする半田ペーストは立−ヒ
かり部１６で阻止され、反射面１５２に這い上がること
がなくなる。従って、反射面１５２は汚れることがなく
、反射効率の低下を防出できる。In the semiconductor light emitting device having the above structure, the mounting surface 12
Is it possible to place a water droplet between the reflective surface 15a and the reflective surface 15a?
Since ηS16 is provided, LED-'P! Even if the solder paste is heated to a high temperature and turned into a liquid when the let 14 is viewed, the solder paste that is about to flow out from the mounting surface 12 is blocked by the standing portion 16 and does not creep up onto the reflective surface 152. Therefore, the reflective surface 152 is not contaminated, and a decrease in reflection efficiency can be prevented.

尚、上記実施例においては、反射部１５がステム１１内
に設けられた構造について説明したが、これに限定する
ものではなく、ステム１１と反射体が別体である４ゲ［
造でもよい。In the above embodiments, the structure in which the reflector 15 is provided within the stem 11 has been described, but the structure is not limited to this, and the structure is not limited to this.
It may be made of wood.

子のマウント時に桿屯性接澗イ３料の反射１川−＼の流
出を効果的に防止することができるので、発光効率が著
しく向上する。Since it is possible to effectively prevent the outflow of the reflection 1 river of the 3 materials attached to the rod when the child is mounted, the luminous efficiency is significantly improved.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の半導体発光装置の構成ン示す断面図、第
２図は本発明の一実）他側に係る半導体発光装置の構成
を示すｌｊｒ面図である。FIG. 1 is a sectional view showing the structure of a conventional semiconductor light emitting device, and FIG. 2 is a 1JR plane view showing the structure of the other side of the semiconductor light emitting device according to the present invention.

Claims (1)

【特許請求の範囲】[Claims] ステムと、このステムのマウント面上に設けられた導電
性接着層と、この専電性接岩層上に設けられた半導体発
光素子と、この半導体発光素子の周辺を取り囲む反射面
を庖する反射体と、前記マウント面の周縁部とｉｌ記反
射１ａ１の下端部との間に設けられた立上がり都とを具
備したことを特徴とする半導体発光装置。A stem, a conductive adhesive layer provided on the mounting surface of the stem, a semiconductor light emitting element provided on the proprietary rock contact layer, and a reflector covering the reflective surface surrounding the semiconductor light emitting element. and a rising edge provided between the peripheral edge of the mount surface and the lower end of the reflector 1a1.
JP58181285A 1983-09-29 1983-09-29 Semiconductor light-emitting device Pending JPS6074486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181285A JPS6074486A (en) 1983-09-29 1983-09-29 Semiconductor light-emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181285A JPS6074486A (en) 1983-09-29 1983-09-29 Semiconductor light-emitting device

Publications (1)

Publication Number Publication Date
JPS6074486A true JPS6074486A (en) 1985-04-26

Family

ID=16098015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181285A Pending JPS6074486A (en) 1983-09-29 1983-09-29 Semiconductor light-emitting device

Country Status (1)

Country Link
JP (1) JPS6074486A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920404A (en) * 1989-05-12 1990-04-24 Hewlett-Packard Company Low stress light-emitting diode mounting package

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4920404A (en) * 1989-05-12 1990-04-24 Hewlett-Packard Company Low stress light-emitting diode mounting package

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