JPS6074481A - Schottky barrier diode - Google Patents
Schottky barrier diodeInfo
- Publication number
- JPS6074481A JPS6074481A JP15902484A JP15902484A JPS6074481A JP S6074481 A JPS6074481 A JP S6074481A JP 15902484 A JP15902484 A JP 15902484A JP 15902484 A JP15902484 A JP 15902484A JP S6074481 A JPS6074481 A JP S6074481A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- regions
- schottky barrier
- guard ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 2
- 241000283690 Bos taurus Species 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 102100032392 Circadian-associated transcriptional repressor Human genes 0.000 description 1
- 101710130150 Circadian-associated transcriptional repressor Proteins 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は逆電圧印加時の逆電流を減少せしめ／ζ効率の
高いンヨノトキバリアダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a barrier diode that reduces reverse current when a reverse voltage is applied and has high efficiency.
（従来技術）
従来のンヨソトキバリアダイオードは第１図（Ｃ示すも
のが代表的である。第１図において１（ｄ／ヨノトキバ
リア形成金属層、２は絶縁被膜、例乏−ば／リコン酸化
膜、３は半導体基体（例えは／リコン）、４は基体３と
反対導電型の’ｋｂとｈ１半導体層で形成するガードリ
ングである。１４１ ｒ２＋の場合はンヨソトキバリア
形成金属層１の周辺部を酸化膜２でカバーし、特性の安
定化を図っている。これら従来のものはバリヤ・・イト
の高さのみを利用するので動作原理上１１ｋＷ方向屯圧
を低くすると、逆電流が増加する構造であり、効率の向
上には限界があった。(Prior art) A typical conventional barrier diode is shown in FIG. 1 (C). In FIG. 3 is a semiconductor substrate (for example, /recon), 4 is a guard ring formed by 'kb and h1 semiconductor layers of the opposite conductivity type to the substrate 3. In the case of 141 r2+, the peripheral part of the barrier forming metal layer 1 is It is covered with an oxide film 2 to stabilize the characteristics.Since these conventional devices only utilize the height of the barrier, due to the operating principle, if the directional pressure is lowered to 11kW, the reverse current increases. Therefore, there was a limit to the improvement of efficiency.
丑だンヨソトキバリアメタルの周辺部での電界集中の／
ζめ、配圧をＰＮダイオードの場合のように理論値の７
０係近くになるようには出来なかった。Electric field concentration around barrier metal /
ζ, the pressure distribution is set to the theoretical value of 7 as in the case of a PN diode.
I couldn't make it close to 0.
本発明はこれら従来型の欠点を解決するため、順方向電
圧降下を充分に低−「シ、逆］１１１１圧はカード、リ
ング効果を利用して高くとり、高効率の７ヨノトキバリ
アダイオードを得るものである。In order to solve these drawbacks of the conventional type, the present invention makes the forward voltage drop sufficiently low - 1111 voltage is high using the card and ring effect, and uses a highly efficient 7-way barrier diode. It's something you get.
（図ではＮ−型）６と反対導電型（図ではＰ＋型）の最
外縁領域（ガードリング領域）、７は前記最外縁領域４
に囲まれたこれと同一導電型の半導体領域、５及び１は
前記領域４に囲まれた半導体層領域及び該最外縁領域４
に跨がり且つ該最外縁領域４と領域７間の半導体層領域
上に夫々設けたノヨノトキバリア形成金属層、８は半導
体層６と同一導電型の半導体基体（図ではＮ＋型）、９
は絶縁被膜、例えばノリコン酸化膜、Ａはノヨソトキバ
リア形成金属層（１，、５）に設け／コ（＋ｌ 電極（
第３７（Ｓ’。(N- type in the figure) 6 and the outermost edge region (guard ring region) of the opposite conductivity type (P+ type in the figure), 7 is the outermost edge region 4
5 and 1 are semiconductor layer regions surrounded by the region 4 and the outermost region 4.
8 is a semiconductor substrate having the same conductivity type as the semiconductor layer 6 (N+ type in the figure); 9
is an insulating film, such as a Noricon oxide film, and A is provided on the Noyosotoki barrier-forming metal layer (1, 5)/co(+l electrode (
No. 37 (S'.
極）、Ｂは半導体基体８のＦ而に設けた（−）電極（第
１電極）である。B is a (-) electrode (first electrode) provided at F of the semiconductor substrate 8.
ここで４は従来のＰＮダイオードの揚台にも設けられる
ことがあったガードリングであるから、その深さ、幅（
・Ｊ空間電荷・頭形成用半導体領域７のものよりも深く
広く設定される。Here, 4 is a guard ring that was sometimes provided on the platform of a conventional PN diode, so its depth and width (
- It is set deeper and wider than that of the J space charge/head forming semiconductor region 7.
最外縁の半導体領域４をカードリンクとなし、且つ／ヨ
ノトキバリア形成金属層１（又に１５）が核″１−４７
体領域４．半導体鎮域７及びこｉｔらに四４れｔ（半導
体層領域にまたがって形成されている。The outermost semiconductor region 4 is used as a card link, and/the barrier forming metal layer 1 (also 15) is the core "1-47".
Body area 4. The semiconductor regions 7 and 44 are formed over the semiconductor layer region.
又、取り囲まれ／こ領域の間隔ａ、ｂは■〕Ｉ′Ｎ−に
、Ｌる空乏層の２倍以５ド、即ちピンチオフに１＝り逆
電流の通路が消滅しうる程度にしている。In addition, the distances a and b between the surrounding regions are set to such an extent that the reverse current path of 1 = 1 = disappears during pinch-off. .
／ヨｙ ） キクイＡ−）’Ｍ！’１ＮＩ−ｉ？Ｉりの
周：）Ｊ ｒ？ｌｉ −ｃ （ｔ：Ｉ、）、１７ｉ造の
連続性がときれる／こめ、電界集中が）５ｃ、／ｌ′、
シやすく、高耐圧化をはかることが困１！１１であるこ
とが知られている。このような例は、一般的なＰＮダイ
オードの場合でも知られている。/yoy) Kikui A-)'M! '1NI-i? I'm here :) J r? li -c (t:I,), 17i structure continuity is broken /kome, electric field concentration)5c, /l',
It is known that it is easy to remove, and it is difficult to increase the voltage resistance. Such an example is also known in the case of a common PN diode.
したがってＰＮダイオードの場合でも、１１ｊ］圧低［
を防止するため、ガードリングをＰＮ接合の最外周辺縁
部に設けられて来た。したがって、／ヨノトキバリアダ
イオードの場合、第１図に示すような構造を利用してバ
リアメタル直下の領域を、逆電圧印加時に、空間電荷領
域で実質的にうめ尽そうとしてもそれによって達成され
る逆面ｊ圧は、ガードリングを有さない従来のＰＮダイ
オード並みのものでしかない。Therefore, even in the case of a PN diode, 11j] pressure low [
To prevent this, a guard ring has been provided at the outermost peripheral edge of the PN junction. Therefore, in the case of a barrier diode, even if the structure shown in Figure 1 is used to substantially fill the area directly under the barrier metal with the space charge area when a reverse voltage is applied, this will not be achieved. The reverse surface j pressure is only comparable to that of a conventional PN diode without a guard ring.
し／こがって従来のＰＮダイオードの逆耐圧の高電圧化
はガードリングを並設することで達成されたように、第
１図に示すノヨソトキバリアダイオードの場合にも、活
性部の最外周縁部にガードリングを並設することによっ
てよシ一層の高１制圧化を達成することができる。However, just as the reverse withstand voltage of the conventional PN diode was achieved by installing guard rings in parallel, the Noyosotoki barrier diode shown in Figure 1 also has a high reverse breakdown voltage of the active part. By arranging guard rings in parallel on the outer peripheral edge, it is possible to further suppress the height.
すなわち、耐圧比較を敢えて行なうとすれば本所構造タ
ガードリング伺きＰＮダイオード〉第１図の／ヨソトキ
ダイオードタガードリングなしＰＮダイオード（〉単純
７ヨノヒキバリアダイオード）となる。That is, if we were to compare the withstand voltages, we would compare a PN diode with a tagger ring with a Honjo structure, a PN diode without a tagger ring, and a PN diode without a tagger ring (a simple 7-way barrier diode).
第２図による本発明の７ヨツトキバリアダイオードの設
置例を示すと、
Ｎ＋層 １／１０００〜３／１００（ｌΩ−ａｎ厚さ２
００μｍηのザブストレート層
Ｎ一層 ０５Ω−ｃｍ
厚さ５μｍのエピタキンアル層
■針留 表面濃度２Ｘ１．０１”個／ｃｃ以１：深さ１
５μｍの半導体拡散層
間隔ａ、ｂ ２〜３μｍ
このような設営１において、１１５の７ヨノトキバリア
形成金属層とし一〇はクロノ１．モリブデンあるいはチ
タンを蒸着して得ることができる。更に、第３図（ａ、
） 、 Ｑ））に半導体基体と反対ｓ、ｊ’ｆｉ ＴＦ
ｉ 塑の半導体ｍによって取り四重れ／こ領域を複数個
設け／こ本発明の他の実施例を示すパ゛第；３図は第２
図に夫々苅応するものであって、その作用は同一である
が、取り四重ねた領域を複数個設けて電ツノ処理容１汁
の大きな半導体基体面積の大なる／ヨノトギバリアダイ
オードの逆電流を有効に低減している。また反対導電型
半導体領域７相互間ｌ−１連結さね、ているが、７によ
って取り囲捷れた領域が逆電圧印加時にピンチオフされ
Ｓばよい。なお各図においてＮ型半導体基体を用いたが
必要に応じてＩ）型導電型半導体茫体を選択しうるのは
もちろんである。An example of the installation of the 7-layer barrier diode of the present invention according to FIG. 2 is as follows:
00 μm η Zabstraight layer N single layer 05 Ω-cm 5 μm thick epitaxy layer ■ Needle clamp Surface concentration 2 x 1.01” pieces/cc or more 1: Depth 1
Semiconductor diffusion layer spacing a, b of 5 μm 2 to 3 μm In such construction 1, 115 7th barrier forming metal layer and 10 are Chrono 1. It can be obtained by vapor depositing molybdenum or titanium. Furthermore, Figure 3 (a,
), Q)) opposite to the semiconductor substrate s, j'fi TF
i. A plurality of quadruple regions are formed using a plastic semiconductor m.
Although the function is the same, it is possible to create a large semiconductor substrate area with a large electric horn processing capacity by providing a plurality of overlapping regions. Effectively reduces current. Further, although the opposite conductivity type semiconductor regions 7 are connected to each other by l-1, the region surrounded by the semiconductor regions 7 may be pinched off when a reverse voltage is applied. Although an N-type semiconductor substrate is used in each figure, it goes without saying that an I) type conductivity type semiconductor substrate can be selected as required.
以上説明したように、本発明の／ヨノトキバリアダイオ
ードは順方向特性をぎせいにすることなく逆電流を有効
忙小在らしめる。！］”）に′ｒ１３．力用として高周
波特性の良い高効率の整流素子をうることができ、実用
に供して極めて効果大なるものである。As explained above, the barrier diode of the present invention effectively reduces reverse current without impairing forward characteristics. ! ]'') It is possible to obtain a highly efficient rectifying element with good high frequency characteristics for power use, and it is extremely effective in practical use.
第１図は従来のンヨソトキバリアダイオードの構造図、
第２図、第３図は本発明の実施例を示す図において１は
／ヨノトキバリア形成金属層、／＼
２及び９は絶縁被膜、ニー３及び８は半導体基体、４は
３，８と反対導電型の半導体領域、７は６と反対導電型
の半導体領域、６は８と同−ｒｊ：ｉ、屯型の半導体層
、Ａは十電極、Ｂは一電極。
洛１図
ノ
熟２０
第３（２）
ｔｏ＞
（ｂｌFigure 1 is a structural diagram of a conventional barrier diode.
Figures 2 and 3 are diagrams showing embodiments of the present invention, in which 1 is a barrier-forming metal layer, 2 and 9 are insulating coatings, knees 3 and 8 are semiconductor substrates, and 4 is the opposite conductor to 3 and 8. 7 is a semiconductor region of the opposite conductivity type to 6, 6 is the same as 8 -rj:i, a trapezoidal semiconductor layer, A is a ten-electrode, and B is one electrode. Raku 1 Zu no Juku 20 No. 3 (2) to> (bl
Claims (1)
と第２の導電形半導体小領域群が形成され、ノヨットキ
バリアメタルと第１の導電形半導体領域間の逆耐圧より
も低い逆電圧を印加した状態で、前記第２の導電形半導
体小領域間が、空間電荷領域によって結ばれる大きさと
されるよう形成された／ヨットキバリア半導体装置に於
いて、ショットキバリアメタル領域の最外側周辺縁部を
第２の導電形半導体で形成されるガードリング領域で取
り囲むと共に、かつ、上記の第２の導電形成 半導体小額群の上記ガードリングに隣接する小領へ 域との間に位置する第１の導電形半導体部がいずれも、
第１の導電形半導体とショットキバリアメタルとの逆耐
圧よシも低い逆電圧を印加した状態で、空間電荷領域で
うめられるように設定きれて形成されたことを特徴とす
るショットキバリアダイオード。[Claims] A Noyotoki barrier metal and a second conductivity type semiconductor small region group are formed on the first conductivity type semiconductor region, and an inverse relationship between the Noyotoki barrier metal and the first conductivity type semiconductor region is formed. In a Schottky barrier semiconductor device, the Schottky barrier metal region is formed such that the second conductivity type semiconductor small regions are connected by a space charge region when a reverse voltage lower than the withstand voltage is applied. The outermost peripheral edge of is surrounded by a guard ring region formed of a second conductive type semiconductor, and is between a small region adjacent to the guard ring of the second conductive semiconductor small group. Both of the first conductivity type semiconductor portions located in
A Schottky barrier diode characterized in that it is formed so as to be filled in a space charge region when a reverse voltage that is lower than the reverse breakdown voltage between a first conductive type semiconductor and a Schottky barrier metal is applied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15902484A JPS6074481A (en) | 1984-07-31 | 1984-07-31 | Schottky barrier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15902484A JPS6074481A (en) | 1984-07-31 | 1984-07-31 | Schottky barrier diode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7765179A Division JPS562672A (en) | 1979-06-20 | 1979-06-20 | Schottky barrier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074481A true JPS6074481A (en) | 1985-04-26 |
Family
ID=15684584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15902484A Pending JPS6074481A (en) | 1984-07-31 | 1984-07-31 | Schottky barrier diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074481A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137368A (en) * | 1988-11-18 | 1990-05-25 | Toshiba Corp | Semiconductor rectifier |
| US5389815A (en) * | 1992-04-28 | 1995-02-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
-
1984
- 1984-07-31 JP JP15902484A patent/JPS6074481A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02137368A (en) * | 1988-11-18 | 1990-05-25 | Toshiba Corp | Semiconductor rectifier |
| US5389815A (en) * | 1992-04-28 | 1995-02-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor diode with reduced recovery current |
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