JPS6073398A - Solidifying treater for radioactive gas - Google Patents

Solidifying treater for radioactive gas

Info

Publication number
JPS6073398A
JPS6073398A JP18209883A JP18209883A JPS6073398A JP S6073398 A JPS6073398 A JP S6073398A JP 18209883 A JP18209883 A JP 18209883A JP 18209883 A JP18209883 A JP 18209883A JP S6073398 A JPS6073398 A JP S6073398A
Authority
JP
Japan
Prior art keywords
electrode
grid
voltage
cylindrical
treater
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18209883A
Other languages
Japanese (ja)
Inventor
寺澤 倫孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP18209883A priority Critical patent/JPS6073398A/en
Publication of JPS6073398A publication Critical patent/JPS6073398A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】[Detailed description of the invention]

し発明の技1・1.■分野1 本発明 Inventive techniques 1.1. ■Field 1 present invention

【、1核分裂!1成刀ス中の敢口J (’lカス
をイAン化しC金屈県体中に江入りるh’i Q’l竹
カスの固定化部311装置に関Jる。 1光明の技術的背賭とイの問題前1 核燃料再処]!I! I l!J!等の原子力施6uは
、有害なmの族04能が環境に放出された場合、その影
響が広範囲かつ長期間にわたる可能14があるために、
安全性の確保を他の一般産業に比べ乙格段に厳しく義務
づ【プられでいる。 再処理工場では、使用済燃1!+からウランどノ″ルト
ニウムを回収りるが、同時に随伴づる核分裂生成物等を
含む成用性廃棄物を適切に処理し1.r IJれぽなら
ない。 敢剣竹廃棄物のうち、気体廃棄物はクリンプトン85(
以下Kl=−85と記づ)のみCあるが、これは半減期
が10.7年と長ズj命であるため、今後の原子力発電
量の増加を見込むと、将来には地球規枳の汚染に繋がる
iljぞれが(1する。 −でこぐ回収技術とともに…升な課題は、回収したKr
 −85をいかに安全に貯蔵(1するいは処分りるかC
ある。従来、h9.側+!1廃巣ガスIJボン1<笠の
F[力容器に14人(〕C永久保存りるツノv1が名え
られている。 しかしながら、圧力容2:;に月入りる/jθd、l、
長開開にわたる安全貯藏の点C問題がある。例えばI]
−力容器は定則的<2耐I′J:%rtハゐがd1令C
義務づtプらζおり、ぞのi11度貯賊カスの移し替え
等等煩鉗で危1(ゐな作業が′j、請求される欠点があ
る。 −/)、気(ホl′!ド渠’1i7JK l’ B !
:)の処理(よ前記ボンl′−,,宿の1]−力容器へ
の貯蔵法の他に、L’71ライ1〜にIG T、7さl
る方法、イオン化注入固定法等が提案され(いる。 しかしなから、ボンベ貯蔵法、13よひLΔライト法(
ま実用化に(,1弐多の改訳りへき問題がある。 イAン(1人1人は、゛小浜、イ1(圧゛C処分操作が
でさるうえ、長期間の安全性c 4j他に比べ1娶れた
方法どされCいる、。 第1図(13J、ひ第2図1et、従来の成用111ガ
スをイオン(1入りる(1人装跨の慨T°を示づ横断面
図C゛あイ)、(Tの(1人1!、Hjl”fは同軸の
2円筒電極(夕1間電極△d)A、び内i;;)電(4
目3)からなり、両電極△、8間に処理力スノ)% i
r、’r人さ4する。1ξの駅間による刀ス処即操1′
(−は2−ステップに分れ(お1′)、まり、第゛1図
に承り第1ステツゾ0は、内部型t4iBに対し外筒電
極△には11電位が印加される。両電極A、B間Cはグ
1−1=放電が生じるが、プラスマ中の止ガスイAン1
は、外筒電極Δに向かつC加速され該雷神Aに衝突する
とともに核用4@Aの金属中に注入される。 次の第2ステツプ′Cは、第2図(ご示しだように、電
極へ(ご対して電極し3に負電位か印加される。両電極
A、B間には第1ステツプと同様にグ]!−敢電が生じ
るが、正方スイΔン1は、内筒電極I3に向かっ゛C加
速ぎれ、該電極Bの表面をi刊撃づる。 この際、スパッタリンクが起(−リ、スパッタ原子aは
対向りる外筒f6極へへ飛散1.. U (;J盾する
。この結果、第2スjツブζは外6:)電4〜△の内壁
にスパッタ原子aによる被II9が形成される。続いC
第1ステツノに)kす、ここC・は前ス)ツブC形成さ
れた被膜にカス4Aン汀人が行tjわれる。 このよ・)にしC最終Fす階には内筒電極+34;Iス
パッタリングにより細くなり、タトfi電極△はスパッ
タ原子aのイ」6による?li! +1!、iの形成C
内壁か)9くなり、そCには多量のカス原子b(内蔵さ
れること【こイする。 このhi71.は、2気戸ツブの操作手順で行なわれる
Iこめ、両電極△、13の印加電圧を交互に変える必要
があり、操作が煩′A11に41っている!11点があ
る。 1北明の目的] 本発明はかかるth、来の事情に対処してなされたしの
(、ぞσ月]的は放射性カス、例えばKr −8F)を
イΔンン1人し固定化りる装置におい(、スパッタリン
グij J、る二]−アインクとイAン注入を同115
にかつ独5’7に制御して実施りることができ、か′)
中層?1:入をii)能にする放射性ガスの固定化処理
装置を提供りることを目的どしている。 1、発明の概要1 づイjわら本発明は、夕1筒電極ど、この外筒電極内に
絶縁体を介しく気密に設(−)られ内筒電極ど、どの内
t′1】電J?+iと前記外筒電極どの間に設りξうれ
た格了状電14jど、この格子状電極と前記外1【)電
極どの間に設りらhた被処分敢口・l性カスの流入[1
おj:0・残留力スの1)1気「1と、前記内筒電極J
jよび格子状電極にスパッタ電Ifoを印IJ11りる
スパッタ電源と、前記格子状電極ど外筒電極にイオン江
入電「を印加づるイオン注入用電源とを具備したことを
特徴どJ−る放射性ガスの固定化処理装置である。 [発明の実施例] 以下第3図および第4図を参照しイ1がら本発明に係る
放射性ガスの固定化処理装面の一実施例を説明する。 第3図にJ3いて、↑〕弓1は外筒型117て、この外
筒電極1の上端には環状絶縁物2および上器3が気密に
設LJられ゛(おり、また、上端にも同様に環状絶縁物
4および下着5が設(プられている。ま1.:、外筒型
(〜1内には前記環状絶縁物2.4をfl して両端が
水密に閉塞された内1n電極6が気密に配訂されている
。さらに内筒電極6ど外筒型4!i1どの間に筒形格子
状電極7が設【]られCいる。内筒電極6ど格了状電I
Fi7どの間にスパッタ電圧を印加づるだめのスパッタ
電源8、および格子状電極7ど外筒電極1どの間にイA
ン注入電圧を印加りるIζめの−(Aン注入電源9が設
りられている。まlζ、前記」ニ藍3には被処即ガスを
流、人づるためのカスfQQ10’+ 10と、外筒電
極1内の残留ガスを排気づ−るための411気II 1
1が接続されている。さらに外fit電極1の外周面に
は水冷蛇管12が巻回されて、1jす、内筒電極G内に
矢印で示したように、冷la+水を通流さlる水冷13
.14が内筒電極6の1端を囚jLiiシ(設【)られ
ている。 本発明にJ:る装置は、土)ホしたJ:うに2つの同軸
内IH,7電1〜1.6の間に第3のやはり同軸の格子
状電極7を説(Jたもの’Cdリリ、格子状電極7に対
しC内筒、i3」、び外筒電極1.6ども負電位が独S
γに印加さ41る。 電+ai (3おJ、び7の間の電II′/メイ−\/
2は両電極間にカスのり1−成型が!トし、第4図に示
したように、ゾラズン中の止イΔンiが電(4t6の表
面を挿i撃L]℃スパッタリングを効率J: <起こづ
条件から決められる、。 スパッタリンクにJ、り電14i 6から故山されIこ
スパッタ原子aは、電極7を通過しく電極1の内壁にイ
ーjむりる。YG捗1おJ、び6の間の電位差V1は、
両電極1、(3間にグロー放電が生じ、正しいイオンi
が電極1あるいはスパッタ原子aのイリ着により形成さ
れた被膜に効率よく注入される条件にJこって一決めら
れる。 このようにして本発明では、−1記したように電+i 
1.6に最適化さレタ電圧V + 、 V 2 ヲin
/vT’印加り−ることにより、連続的にカスイオンの
11人および処理を覆ることを可能にJる1゜[発明の
効果] 以上説明しノ〔J、うに本発明の敢q:、+ +!Iカ
スの固定化部1q!装置によれば、外筒電極d3よび内
部型)1こぞれぞれ独やに格子状電極に対して負電圧を
印加することにより、iWt者の電極内壁面て【Jイオ
ン)1:入、後右の電極表面Cはスパッタリングが起こ
り、その結果、外商電極内壁にスバ・ンタリング原’j
’ hKf」着し、被膜が形成されると同1旧こ該被l
l0FiへQ)イオンの中層4」人を可能にする。従っ
て、19 (’F (幾椙が単純ひあり、かつ連続的に
成用11万スの固定化処理装置が実施できる効果がある
[, 1 nuclear fission! 1 Jakuchi J ('l dregs are turned into ink and put into the C Kinkutsu prefecture body) J'i Q'l Bamboo dregs immobilization part 311 device J Problems with technical risk and A1 Nuclear fuel reprocessing]! I! I l! J! Nuclear power plants such as Since there are 14 possibilities over the period,
Compared to other general industries, there are much stricter requirements to ensure safety. At the reprocessing plant, 1! Uranium and rutonium will be recovered from the +, but at the same time, the associated useful waste, including nuclear fission products, etc. will be appropriately disposed of. The thing is Crimpton 85 (
There is only C (hereinafter written as Kl = -85), but this has a long half-life of 10.7 years, so if the amount of nuclear power generation is expected to increase in the future, it will not reach the global scale in the future. Each of the ilj that leads to contamination (1).
How to safely store (1 or dispose of) -85C
be. Conventionally, h9. Side+! 1 Waste nest gas IJ bomb 1
There is a point C problem regarding safe storage over long openings. For example I]
- The force container is regular <2 resistance I'J: %rt high is d1 order C
There is a downside that you will be charged for the laborious and dangerous work such as transferring the scum of the robbers. Doyu '1i7JK l' B!
In addition to the storage method in the power container, IG T, 7L in L'71 Lie 1~
methods such as the ionization implantation fixation method, etc. have been proposed.
However, there is a problem in the practical application of (,1). Compared to the others, it is a more efficient method than the others. Cross-sectional view C゛A), (T's (1 person 1!, Hjl''f is the coaxial 2 cylindrical electrode (Y1 electrode △d) A, Biuchi i;;) electric (4
Consisting of 3), processing power between both electrodes △ and 8)% i
r, 'r people are 4. Immediate operation of swords with 1ξ station distance 1′
(- is divided into 2-steps (1'), and as shown in Fig. 1, in the first step 0, 11 potentials are applied to the outer cylinder electrode △ for the inner type t4iB. Both electrodes A , B between G1-1 = discharge occurs, but the stop gas A1 in the plasma
is accelerated by C toward the outer cylinder electrode Δ, collides with the thunder god A, and is injected into the metal of the nuclear 4@A. In the next second step 'C, as shown in Figure 2, a negative potential is applied to the electrode (3). !-Electric current is generated, but the square switch ∆1 accelerates toward the inner cylinder electrode I3 and hits the surface of the electrode B every i times. At this time, sputter link occurs (-re, The sputtered atoms a scatter to the opposing outer cylinder f6 pole 1..U (;J shield. As a result, the second tube ζ is exposed to the outer wall of the outer cylinder f6). II9 is formed.Continued C
In the first step, the 4A coating is applied to the formed film. In this case, the inner cylinder electrode + 34; I becomes thinner due to sputtering, and the Tato fi electrode △ is due to the sputtered atoms a'6? li! +1! , the formation of i C
The inner wall) becomes 9, and there is a large amount of dregs atoms b (built-in) in that C. This hi71. It is necessary to alternately change the applied voltage, and there are 41 complicated operations! There are 11 points. The target is radioactive waste, such as Kr-8F, in a device that immobilizes it by injecting one ink and one ink (sputtering).
It can be carried out in a controlled manner, or
Middle class? 1: It is an object of the present invention to provide a radioactive gas immobilization processing device that enables ii) 1. Summary of the Invention 1 The present invention provides a first cylindrical electrode, etc., which is airtightly installed within this outer cylindrical electrode via an insulator, and an inner cylindrical electrode, which J? +i and the outer cylindrical electrode 14j, which is installed between the lattice electrode 14j, and the outer cylindrical electrode 14j. 1
Oj: 0 Residual force 1) 1 "1 and the inner cylinder electrode J
The radioactive material is characterized by being equipped with a sputtering power source for applying a sputtering electric current to the grid electrodes and the grid electrodes, and an ion implantation power source for applying an ion injection current to the outer cylindrical electrodes of the grid electrodes. This is a gas immobilization processing device. [Embodiment of the Invention] An embodiment of the radioactive gas immobilization processing device according to the present invention will be described below with reference to FIGS. 3 and 4. 3, the bow 1 has an outer cylindrical shape 117, and the annular insulator 2 and the upper part 3 are airtightly installed at the upper end of the outer cylindrical electrode 1. An annular insulator 4 and an undergarment 5 are installed in the outer cylindrical type (1). The electrodes 6 are airtightly arranged. Furthermore, a cylindrical grid electrode 7 is provided between the inner cylinder electrode 6 and the outer cylinder electrode 4.
Sputtering voltage is applied between Fi7 and sputtering power supply 8, and between grid electrode 7 and outer cylindrical electrode 1.
An injection power supply 9 is provided for applying an injection voltage to the injection voltage. and 411 gas II 1 for exhausting residual gas in the outer cylinder electrode 1.
1 is connected. Further, a water-cooled corrugated tube 12 is wound around the outer circumferential surface of the outer fit electrode 1, and a water-cooled coil 13 through which cold la + water flows as shown by the arrow inside the inner tube electrode G.
.. 14 is attached to one end of the inner cylinder electrode 6. The device according to the present invention has a third coaxial grid electrode 7 between two coaxial IHs, 7 electrics 1 to 1.6. Lily, grid electrode 7, C inner cylinder, i3'', and outer cylinder electrode 1.6 have a negative potential S.
41 is applied to γ. Den+ai (Den II' between 3, J and 7/Mei-\/
2 is glue 1-molding between both electrodes! As shown in Fig. 4, the stop Δn i in Zolazun is determined from the conditions under which the sputtering occurs due to the electric current (inserting the surface of 4t6 L)°C sputtering. The sputtered atoms a pass through the electrode 7 and reach the inner wall of the electrode 1.The potential difference V1 between the electrodes 1, 6, and 6 is
A glow discharge occurs between both electrodes 1 and 3, and the correct ion i
J is determined by the conditions for efficiently injecting into the electrode 1 or the film formed by the deposition of sputtered atoms a. In this way, in the present invention, as indicated by -1, the voltage +i
Optimized letter voltage V + , V 2 in 1.6
By applying /vT', it is possible to continuously cover the cass ions and the treatment. +! I-scum immobilization part 1q! According to the device, by independently applying a negative voltage to the outer cylindrical electrode d3 and the inner cylindrical electrode d3 and the grid electrode, the inner wall surface of the iWt electrode (J ion) 1: enters, Sputtering occurs on the rear right electrode surface C, and as a result, sputtering occurs on the inner wall of the foreign electrode.
'hKf' is deposited and a film is formed.
10Fi to Q) ion's middle class 4'' people. Therefore, it is possible to implement an immobilization treatment apparatus of 110,000 units in a simple manner and continuously.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の敢銅竹ガスの固定化処理装置の要部を示
′?J横1tli面図、第2図は第1図の他の1FII
f+ヒをii+!明りるための横断面図、第3図本発明
り係る/I父QJ +lJ刀スの固定化処理装置ill
+の一実施例を一部ブ1−1ツクC小づ縦断面図、第4
図は第3図のA−A線の矢視/〕向を切断して示す横断
面図である。 1・・・・・・・・・・・外筒電極 2.4・・・・・In?払絶縁物 3・・・・・・・・・・[監 (5・・・・・・・・・・・・壬 額 6・・・・・・・・・・・・内部型1らλ7・・・・・
・・・・・・・格子状電極8・・・・・・・・・・スパ
ッタ電源 ℃〕・・・・・・・・・・・・(7IンF、1人電諒1
0・・・・・・・・・・・・ガス流入1」′11・・・
・・・・・・・・+Jl気L1′12・・・・・・・・
・・・・蛇管 13.1/l・・・水冷配管 fい11!人弁理上 須 山 佐 −
Figure 1 shows the main parts of the conventional fixation processing equipment for gando-chiku gas. J horizontal 1tli view, Figure 2 is another 1FII of Figure 1
f+hi ii+! Transverse cross-sectional view for clarity, Figure 3: Immobilization processing device for /I father QJ + lJ sword related to the present invention ill
Part of one embodiment of + is shown in Fig. 1-1.
The figure is a cross-sectional view taken along the line A--A in FIG. 3 in the direction of the arrow. 1......Outer cylinder electrode 2.4...In? Disposal insulation material 3・・・・・・・・・ [Supervisor (5・・・・・・・・・・壬 Amount 6・・・・・・・・・・・・Internal mold 1 to λ7・・・・・・
......Grid-shaped electrode 8...Sputter power source °C]...... (7 IF, 1 person
0......Gas inflow 1'''11...
・・・・・・・・・+JlkiL1'12・・・・・・・・・
...Serial pipe 13.1/l...Water cooling pipe f11! As a personal attorney, Suyama Sa −

Claims (1)

【特許請求の範囲】[Claims] (1)外筒電極と、この外節電枠内に絶縁体を介しく気
密(、二段(〕られ内内電極と、この内f1電極と前記
外61電1リヘとの間に設置プられた格子状電極と、こ
の格r状電極と11(J記外筒電極との間に設けられた
彼処分数QJ f!lガスの流入11 d−7沫び残留
ガスの」男気11ど、1)11記内筒電極d5よひ格子
状電極にスパック電圧を印加りるスパック電源と、前記
格子状電極ど外i;″1)雷1)i i、ニイAンFJ
−人電圧を印加づるイオン21人用電鯨と4目11i 
シたことを!’、’j徴とりる敢口」↑(lガスの固定
化部1111装hTt 。
(1) The outer cylindrical electrode, the inner electrode that is airtightly placed (in two stages) within this outer power-saving frame via an insulator, and the inner electrode that is installed between this inner f1 electrode and the outer 61 electric 1 electrode. A lattice-shaped electrode is provided between the lattice-shaped electrode and the cylindrical electrode 11 (J). 1) A spack power supply that applies a spack voltage to the grid-like electrodes above the inner cylindrical electrode d5 and the grid-like electrode.
-Ion electric whale for 21 people that applies human voltage and 4 eyes 11i
What happened! ','J's courage to take it' ↑ (L gas immobilization unit 1111 hTt.
JP18209883A 1983-09-30 1983-09-30 Solidifying treater for radioactive gas Pending JPS6073398A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18209883A JPS6073398A (en) 1983-09-30 1983-09-30 Solidifying treater for radioactive gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18209883A JPS6073398A (en) 1983-09-30 1983-09-30 Solidifying treater for radioactive gas

Publications (1)

Publication Number Publication Date
JPS6073398A true JPS6073398A (en) 1985-04-25

Family

ID=16112308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18209883A Pending JPS6073398A (en) 1983-09-30 1983-09-30 Solidifying treater for radioactive gas

Country Status (1)

Country Link
JP (1) JPS6073398A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56163093A (en) * 1980-04-21 1981-12-15 Bbc Brown Boveri & Cie Activated wax and manufacture of thin sheet consisting of said wax
JPS58140381A (en) * 1982-02-12 1983-08-20 日本特殊陶業株式会社 Metallization of silicon nitride sintered body surface

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56163093A (en) * 1980-04-21 1981-12-15 Bbc Brown Boveri & Cie Activated wax and manufacture of thin sheet consisting of said wax
JPS58140381A (en) * 1982-02-12 1983-08-20 日本特殊陶業株式会社 Metallization of silicon nitride sintered body surface

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