JPS6073310A - Pattern inspecting apparatus - Google Patents
Pattern inspecting apparatusInfo
- Publication number
- JPS6073310A JPS6073310A JP18202283A JP18202283A JPS6073310A JP S6073310 A JPS6073310 A JP S6073310A JP 18202283 A JP18202283 A JP 18202283A JP 18202283 A JP18202283 A JP 18202283A JP S6073310 A JPS6073310 A JP S6073310A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- specimen
- output
- inspected
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
四) 発明の技術分野
本発明はパターン検査装置に係わり、特に被検査物がM
INされた複数のパターンからなる集積回路用チップ等
のパターン検査を複数のマスター信号によって選択制御
するようにしたパターン検査装置に関する。[Detailed Description of the Invention] 4) Technical Field of the Invention The present invention relates to a pattern inspection device, and particularly to a pattern inspection device in which an object to be inspected is M
The present invention relates to a pattern inspection apparatus that selectively controls pattern inspection of an integrated circuit chip or the like consisting of a plurality of IN patterns using a plurality of master signals.
(2) 技術の背景
集積回路チップのようにパターン形成された被検査物の
パターン検査を検査装置で行なう場合。(2) Background of the technology When inspecting the pattern of a patterned object to be inspected, such as an integrated circuit chip, using an inspection device.
従来の検査装置に於いては、検査しようとする標準的な
パターン、例えばマスクパターンと検査パターンの一致
の度合を比較し、該比較値が一定の規準値にあれば標準
的なパターンと同一であると判断するパターン整合方法
が知られている。Conventional inspection equipment compares the degree of agreement between the standard pattern to be inspected, such as a mask pattern, and the inspection pattern, and if the comparison value is within a certain standard value, the pattern is the same as the standard pattern. A pattern matching method is known that determines whether there is a problem.
然し、この様なパターン検査装置では複数の異なるパタ
ーンを積層した被検査バクーンを完全に検査出来ない欠
点があった。例えば金属膜のパターン上にカバー膜のパ
ターンがある様な被検査物では金属パターンからのパタ
ーン検出信号はカバー膜のパターンの有無によって異な
るので単一層のパターン検出信号だりでは積層膜からな
る被検査物のパターン検査を行ったことにならない問題
があった。However, such a pattern inspection apparatus has a drawback that it cannot completely inspect a bag to be inspected in which a plurality of different patterns are laminated. For example, in the case of an object to be inspected in which there is a cover film pattern on a metal film pattern, the pattern detection signal from the metal pattern will differ depending on the presence or absence of the cover film pattern. There was a problem in which the pattern inspection of the object was not performed.
以下これらの問題を詳述する。These problems will be explained in detail below.
(3) 従来技術の問題点
第1図は従来のパターン検査装置に利用される被検査物
の平面図、第2図は被検査物のバクーン検出波形を示す
ものである。(3) Problems with the Prior Art FIG. 1 is a plan view of an object to be inspected used in a conventional pattern inspection apparatus, and FIG. 2 shows a waveform detected by the object to be inspected.
第1図に於いて、1は例えば、集積回路チ・7プ等のパ
ターン検査を行なう被検査物であり複数の異なるパター
ンを有する膜がInHされたものからなり2例えば下側
の膜にはパターン2が描かれ。In FIG. 1, reference numeral 1 denotes an object to be inspected for pattern inspection of, for example, an integrated circuit chip, and is made of a film having a plurality of different patterns coated with InH. Pattern 2 is drawn.
上側の膜にはパターン3が描かれている。従来のパター
ン検査装置では被検査物lの上側の膜に形成されたパタ
ーン3のみを検出している。今パターン上をレーザが矢
印入方向に走査した場合、第2図(alに示す様なパタ
ーン検出信号が得られる。Pattern 3 is drawn on the upper membrane. The conventional pattern inspection apparatus detects only the pattern 3 formed on the upper film of the object to be inspected 1. If the laser scans the pattern in the direction indicated by the arrow, a pattern detection signal as shown in FIG. 2 (al) will be obtained.
更に他の検査装置として上側並に下側のパターン2.3
」二を入方向にセンサーを走査すると両パターンから同
時にパターン検出信号を得て第2図(blの様な波形を
得ることが出来る。前者の第2図(alに示す波形では
下側のパターン比較を行うことが出来ない。後者の第2
図(blに示す場合は標準的な一つのレヘルLの値でパ
ターンが標準的なパターンと同一であるか否かを判断し
ているために上側のパターン3のパターン検査を行なっ
ていることと同じことになり、下側のパターン2の検査
を行うためには例えばレヘルL1で示す値での判断が必
要であるが1回の検査でこれを行うことは困難である欠
点があった。Furthermore, as another inspection device, pattern 2.3 on the upper side as well as the lower side
When the sensor is scanned in the input direction of ``2'', pattern detection signals can be obtained from both patterns simultaneously and a waveform like that shown in Figure 2 (bl) can be obtained. No comparison can be made.The second of the latter
In the case shown in the figure (bl), it is determined whether the pattern is the same as the standard pattern based on the value of one standard level L, so the pattern inspection of pattern 3 on the upper side is performed. The same thing happens, and in order to inspect the lower pattern 2, it is necessary to make a judgment based on the value indicated by level L1, for example, but there is a drawback that it is difficult to do this in one inspection.
(4) 発明の目的
本発明は上記従来の欠点に#I 、)、 、積層膜の各
々に形成されたパターンの検査を一度に行うことの出来
るパターン検査装置を提供することを目的とするもので
ある。(4) Purpose of the Invention The present invention addresses the above-mentioned drawbacks of the conventional art.It is an object of the present invention to provide a pattern inspection device that can inspect patterns formed on each of the laminated films at the same time. It is.
(5) 発明の構成
そしてこの目的は本発明によればパターン形成された膜
を多層化した被検査物と、該被検査物のパターンを形成
するためのマスター等の複数の標準パターンと、光照射
手段を具備し、上記光照射手段からの光を上記被検査物
に照射して得られた充電変換信号を上記複数の標準パタ
ーンに照射して得られた光電変換信号により選択的に処
理する選択処理手段を有してなることを特徴とするパタ
ーン検査装置を提供することで達成される。(5) Structure and object of the invention According to the present invention, an object to be inspected in which patterned films are multilayered, a plurality of standard patterns such as a master for forming the pattern of the object to be inspected, and an optical comprising an irradiation means, and selectively processes a charge conversion signal obtained by irradiating the object to be inspected with light from the light irradiation means using a photoelectric conversion signal obtained by irradiating the plurality of standard patterns. This is achieved by providing a pattern inspection device characterized by having a selection processing means.
(6) 発明の実施例 以下本発明の一実施例を図面について詳記する。(6) Examples of the invention An embodiment of the present invention will be described in detail below with reference to the drawings.
第3図は本発明のパターン検査装置の光学系の構成を示
すものである。FIG. 3 shows the configuration of the optical system of the pattern inspection apparatus of the present invention.
同図において、4はレーザ源でレーザ光は偏向系5を介
し矢印Y−Y方向に振られハーフミラ−6,7と反射ミ
ラー8で反射されたレーザ光ばレンズ10,11.12
を通して複数の第1及び第2のマスク−13,14と複
数の異なるパターンが形成された層からなる積層型の被
検査物15に照射される。In the figure, reference numeral 4 denotes a laser source, and the laser beam is deflected in the direction of arrow Y-Y through a deflection system 5, and is reflected by half mirrors 6, 7 and a reflecting mirror 8.
A laminated inspection object 15 made up of a plurality of first and second masks 13 and 14 and layers each having a plurality of different patterns is irradiated through the beam.
被検査物15は第4図(alに示す様に例えば下層に形
成したパターン15aと上層に形成されたパターン15
bよりなる。As shown in FIG.
Consists of b.
第1及び第2のマスター13及び14は第4図+bl
fclに示J様に積層した集積回路チップ等からなる被
検査物15の各々のパターン15a、15bに対応した
パターン13a、14.aを有するものである。The first and second masters 13 and 14 are shown in Figure 4+bl
Patterns 13a, 14 . It has a.
第1及び第2のマスク−13,14を透過したレーザは
レンズ16.17を通ってセンサ19゜20に与えられ
電気信号に変換されて増幅回路22.23を介して出力
端子にマスター出力MIM2を取り出す。The laser beam transmitted through the first and second masks 13 and 14 passes through a lens 16.17 and is applied to a sensor 19.20, where it is converted into an electrical signal and sent to the output terminal via an amplifier circuit 22.23 as a master output MIM2. Take out.
被検査物15に照射されたレーザ光は被検査物で反射さ
れハーフミラ−9で反射されセンサ18に与えられた反
射光は電気信号に変換されて増幅回路21で増幅後に出
力端子に被検査出力T1を取り出す。The laser beam irradiated onto the object to be inspected 15 is reflected by the object to be inspected, reflected by the half mirror 9, and the reflected light given to the sensor 18 is converted into an electrical signal, and after being amplified by the amplifier circuit 21, the output to be inspected is sent to the output terminal. Take out T1.
上記構成に於いて1例えば第4図(al (bl (C
1の矢印Aで示すパターン上をレーザが走査した場合、
センサ1B、19.29から出力される信号波形は第5
図(at (bl fatに示す如き波形で被検査物1
5では波形になまりが生じS/Nはよくない。これに対
しマスター13.14からの出力波形はS/Nがよい事
は明らかである。In the above configuration, for example, FIG.
When the laser scans the pattern shown by arrow A in 1,
The signal waveform output from sensor 1B, 19.29 is the fifth
The test object 1 with a waveform as shown in the figure (at (bl fat)
5, the waveform becomes distorted and the S/N ratio is not good. On the other hand, it is clear that the output waveforms from the masters 13 and 14 have a good S/N ratio.
そこで本発明では第51”J++81に示す信号波形の
24で示す領域は第1のマスク13の出力波形M1で置
換し、25a、25b’で示す領域は第2のマスタ14
の出力波形M2で置換する様な信号処理を行う様にした
ものである。この様な信号処理装置を第6図及び第7図
(al (blによって説明する。Therefore, in the present invention, the region indicated by 24 of the signal waveform shown in No. 51"J++81 is replaced by the output waveform M1 of the first mask 13, and the regions indicated by 25a and 25b' are replaced by the output waveform M1 of the second master 14.
The signal processing is performed such that the signal is replaced with the output waveform M2. Such a signal processing device will be explained with reference to FIGS. 6 and 7 (al (bl).
第6図は本発明の信号処理回路の一例を示し第7図(a
l (blは第6図を説明する波形図である。FIG. 6 shows an example of the signal processing circuit of the present invention, and FIG.
l (bl is a waveform diagram explaining FIG. 6.
第6図に於いてM IM 2 M 3・・・・・・Mn
は複数のマスターパターン透過後の出方であり1被検査
物は上記複数のマスターパターンを組合せた積層体から
構成されその出力はT+として示されている。In Figure 6, M IM 2 M 3...Mn
is the output after passing through a plurality of master patterns, and one object to be inspected is composed of a laminate obtained by combining the above-mentioned plurality of master patterns, and its output is indicated as T+.
マスターMIM2・・・・・・Mnの出力ば選択回路2
6に与えられアンドゲート等よりなる切換回路27a、
27b・・・・・・27nの一方の端子に与えられ。Master MIM2...Mn output selection circuit 2
6, a switching circuit 27a consisting of an AND gate, etc.;
27b......Given to one terminal of 27n.
被検査物よりの出力T +は切換回路27a、27b・
・・・・・27nの他方の端子に共通に与えられ上記し
た各々の切換回路27a、27b・・・・・・27nの
出力は例えばウィンド幅が各々異なるウィンドコンパレ
ータ等からなる機能の異なる信号処理回路28a、28
b・・・・・・28nに与えられ、これら信号処理回路
の出力は共通にされて′r2として出力される。The output T+ from the object to be inspected is transferred to switching circuits 27a, 27b,
...27n, and the outputs of the above-mentioned switching circuits 27a, 27b...27n are signal processing devices with different functions, such as window comparators each having a different window width. circuits 28a, 28
b...28n, and the outputs of these signal processing circuits are shared and output as 'r2.
上記の構成に於ける動作を説明するに被検査物上をレー
ザ光が走査したときに生ずる波形が第7図ta+のTI
に示す如きものであるとすれば29a。To explain the operation of the above configuration, the waveform generated when the laser beam scans the object to be inspected is TI shown in Fig. 7 ta+.
If it is as shown in 29a.
29bで示す領域では選択回路26からのMlで示すマ
スター信号と被検査出力T+が与えられている切換回路
27aが“オン”され信号処理回路28aではマスター
信号MIのレベルに於いて。In the area indicated by 29b, the switching circuit 27a to which the master signal indicated by Ml from the selection circuit 26 and the output to be tested T+ are applied is turned on, and the signal processing circuit 28a is at the level of the master signal MI.
マスター信号M+と被検査出力T+の比較がなされ比較
した結果が例えば第7図fblに示す様に信号処理回路
28aの所定領域レベルL2に多分割した出力がT++
の様に入っていれば出力されず被検査出力の多分割した
出力Tllをそのまま出力する。次に第7図(a)の被
検査出力を分割した30a、30bの領域では切換回路
27bが“オン”されてfB号処理回路28bではマス
ク信号M2のレベルに於いてマスク信号M2と被検査出
力T1の比較がなされ、比較結果が例えば第7図(b)
に示す様に信号処理回路28bの所定領域レベルL2に
多分割した出力TI2が入っていなければ1を出力しマ
スターM2のレベルで定まる波形を出力する。同様の比
較を領域31についても行なう。The master signal M+ and the output to be tested T+ are compared, and the result of the comparison is, for example, as shown in FIG.
If it is entered like this, it is not output and the multi-divided output Tll of the output to be inspected is output as is. Next, in the regions 30a and 30b obtained by dividing the output to be inspected in FIG. The output T1 is compared, and the comparison result is shown in FIG. 7(b), for example.
As shown in the figure, if the multi-divided output TI2 is not included in the predetermined area level L2 of the signal processing circuit 28b, 1 is output and a waveform determined by the level of the master M2 is output. A similar comparison is made for area 31 as well.
この場合は切換回路27cと信号処理回路28Cが動作
し、n層からなる被検査物では第n番目迄の切換回路2
7nと信号処理回路28n迄動作することになる。In this case, the switching circuit 27c and the signal processing circuit 28C operate, and in the case of an object to be inspected consisting of n layers, the switching circuit 27c and the signal processing circuit 28C operate.
7n and the signal processing circuit 28n are operated.
(7) 発明の効果
本発明は叙上の様に構成し動作するので多層パターン構
成の被検査物の欠陥部分を検出する際に各層のパターン
毎に時分割することで複数のマスターにより各々に適す
る処理を行うこと力咄来。(7) Effects of the Invention Since the present invention is configured and operates as described above, when detecting a defective part of an object to be inspected with a multilayer pattern structure, time sharing is performed for each pattern of each layer, so that each pattern is detected by a plurality of masters. It is your responsibility to carry out appropriate processing.
名!(も積層されたパターンを持つ被検査物を一回の検
査で欠陥検出し得る特徴を有する。given name! (Also has the feature that defects can be detected in a test object having stacked patterns in a single inspection.
第1図は従来の異なるパターンを持つ層を積層した集積
回路チンプの如き被検査物の平面図、第2図fal (
blは第1図で矢印入方向にレーザ光を走査したときの
電気的出方波形図、第3図は本発明のパターン検査装置
の光学系を示す構成図、第4図(al〜(clは第3図
に用いる被検査物並にマスターのパターンを示す平面図
、第5図(al〜(c)は第4図f8)〜(C1のパタ
ーン上をレーザ光で走査した時の電気的出力波形図、第
6図は本発明のパターン検査装置の系統図、第7図(a
l (blは第6図の波形説明図である。
1.12・・・被検査物、 2.3,15゜15a、1
5b、13a、14a−−−パターン。
4・・・レーザ源、 5・・・偏向系。
6.7.9・・・ハーフミラ−98・・・反射ミラー、
10.11.12.16゜17・・・レンズ、 13
.14・・・マスター、 18,19.20−−−セン
サ。
21.22.23・・増幅回路、 T1・・・被検査出
力、 MIM2・・・・・・Mn・・・マスク出力、
26・・・選択回路。
27a〜27n・・・切換回路、 28a〜28n・・
・信号処理回路
;バ4図
第5図
4Figure 1 is a plan view of a conventional test object, such as an integrated circuit chimp, in which layers with different patterns are laminated;
bl is an electrical output waveform diagram when scanning the laser beam in the direction of the arrow in FIG. 1, FIG. 3 is a configuration diagram showing the optical system of the pattern inspection apparatus of the present invention, and FIG. is a plan view showing the pattern of the inspected object and the master used in Fig. 3, and Figs. The output waveform diagram, FIG. 6 is a system diagram of the pattern inspection device of the present invention, and FIG. 7 (a
l (bl is the waveform explanatory diagram in Fig. 6. 1.12...Test object, 2.3, 15° 15a, 1
5b, 13a, 14a --- pattern. 4... Laser source, 5... Deflection system. 6.7.9...Half mirror-98...Reflecting mirror,
10.11.12.16°17...Lens, 13
.. 14...Master, 18,19.20---Sensor. 21.22.23...Amplifier circuit, T1...Test output, MIM2...Mn...Mask output,
26...Selection circuit. 27a-27n...switching circuit, 28a-28n...
・Signal processing circuit; Figure 4 Figure 5 Figure 4
Claims (1)
数の標準パターンと、光の照射手段を具備し、上記光照
射手段からの光を上記被検査物に照射して得られた光電
変換信号を上記複数の標準パターンに照射して得られた
光電変換信号により選択的に処理する選択処理手段を有
してなることを特徴とするパターン検査装置。[Claims] An object to be inspected comprising multilayered patterned films. A photoelectric conversion signal comprising a plurality of standard patterns such as a master for forming a pattern of the object to be inspected and a light irradiation means, and obtained by irradiating the object to be inspected with light from the light irradiation means. A pattern inspection apparatus comprising a selection processing means for selectively processing a photoelectric conversion signal obtained by irradiating the plurality of standard patterns with a photoelectric conversion signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18202283A JPS6073310A (en) | 1983-09-30 | 1983-09-30 | Pattern inspecting apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18202283A JPS6073310A (en) | 1983-09-30 | 1983-09-30 | Pattern inspecting apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6073310A true JPS6073310A (en) | 1985-04-25 |
Family
ID=16110968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18202283A Pending JPS6073310A (en) | 1983-09-30 | 1983-09-30 | Pattern inspecting apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6073310A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0374694A2 (en) * | 1988-12-23 | 1990-06-27 | Hitachi, Ltd. | Defect detection system and method for pattern to be inspected |
US5153444A (en) * | 1988-12-23 | 1992-10-06 | Hitachi, Ltd. | Method and apparatus for detecting patterns |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472076A (en) * | 1977-11-19 | 1979-06-09 | Fuji Electric Co Ltd | Method and apparatus for pattern inspection |
JPS55117944A (en) * | 1979-03-05 | 1980-09-10 | Daihen Corp | Pattern automatic check method |
JPS577200A (en) * | 1980-06-17 | 1982-01-14 | Hitachi Ltd | Device for positioning wire pattern |
-
1983
- 1983-09-30 JP JP18202283A patent/JPS6073310A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5472076A (en) * | 1977-11-19 | 1979-06-09 | Fuji Electric Co Ltd | Method and apparatus for pattern inspection |
JPS55117944A (en) * | 1979-03-05 | 1980-09-10 | Daihen Corp | Pattern automatic check method |
JPS577200A (en) * | 1980-06-17 | 1982-01-14 | Hitachi Ltd | Device for positioning wire pattern |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0374694A2 (en) * | 1988-12-23 | 1990-06-27 | Hitachi, Ltd. | Defect detection system and method for pattern to be inspected |
US5153444A (en) * | 1988-12-23 | 1992-10-06 | Hitachi, Ltd. | Method and apparatus for detecting patterns |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5436464A (en) | Foreign particle inspecting method and apparatus with correction for pellicle transmittance | |
JPS6017044B2 (en) | Printed wiring board pattern inspection equipment | |
JPH08128959A (en) | Optical inspection method and optical inspection device | |
JPH01174948A (en) | Surface inspection device | |
JPS6073310A (en) | Pattern inspecting apparatus | |
JPS61260632A (en) | Foreign matter detector | |
JPS61176838A (en) | Inspection of defect of transparent or semi-transparent plate-shaped body | |
JPH05215694A (en) | Method and apparatus for inspecting defect of circuit pattern | |
JPH07128250A (en) | Foreign matter inspection device for photomask for manufacturing semiconductor device | |
JPH09218162A (en) | Surface defect inspection device | |
JP2968106B2 (en) | Via hole inspection equipment | |
JP3099451B2 (en) | Foreign matter inspection device | |
JPH02194352A (en) | Inspection device for surface of transparent substrate | |
JPH05216211A (en) | Method and device for inspecting mask | |
JPH0516585B2 (en) | ||
JPS5862544A (en) | Device for checking foreign matter | |
JPH0620934A (en) | Method and apparatus for inspecting foreign matter of resist coating film | |
JP2022047966A (en) | Photomask blank, method for producing photomask blank, learning method and method for inspecting photomask blank | |
JPS62299706A (en) | Pattern inspecting instrument | |
JPS635895B2 (en) | ||
JPH0325739B2 (en) | ||
JPH03256341A (en) | Pattern inspection device by comparison | |
JPS61126405A (en) | Position inspecting device | |
JPS61107143A (en) | Optical surface inspection apparatus | |
JPS63298105A (en) | Slit light source device |