JPS6071927A - 圧力トランスデユ−サ及びその製造法 - Google Patents
圧力トランスデユ−サ及びその製造法Info
- Publication number
- JPS6071927A JPS6071927A JP59180261A JP18026184A JPS6071927A JP S6071927 A JPS6071927 A JP S6071927A JP 59180261 A JP59180261 A JP 59180261A JP 18026184 A JP18026184 A JP 18026184A JP S6071927 A JPS6071927 A JP S6071927A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- capacitance
- electrode
- diaphragm
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/527,531 US4467394A (en) | 1983-08-29 | 1983-08-29 | Three plate silicon-glass-silicon capacitive pressure transducer |
| US527531 | 1983-08-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6071927A true JPS6071927A (ja) | 1985-04-23 |
| JPH0431052B2 JPH0431052B2 (enFirst) | 1992-05-25 |
Family
ID=24101835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59180261A Granted JPS6071927A (ja) | 1983-08-29 | 1984-08-29 | 圧力トランスデユ−サ及びその製造法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4467394A (enFirst) |
| EP (1) | EP0136249B1 (enFirst) |
| JP (1) | JPS6071927A (enFirst) |
| DE (1) | DE3481140D1 (enFirst) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02290525A (ja) * | 1988-12-30 | 1990-11-30 | United Technol Corp <Utc> | 低誘電ドリフト容量型圧力センサ |
| JPH04116058A (ja) * | 1990-09-05 | 1992-04-16 | Nisca Corp | 原稿給送装置 |
| JP2019020398A (ja) * | 2017-07-12 | 2019-02-07 | センサータ テクノロジーズ インコーポレーテッド | 増加した容量性応答のために構成されるガラス障壁材料を備える圧力センサ素子 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI71015C (fi) * | 1984-02-21 | 1986-10-27 | Vaisala Oy | Temperaturoberoende kapacitiv tryckgivare |
| FI69211C (fi) * | 1984-02-21 | 1985-12-10 | Vaisala Oy | Kapacitiv styckgivare |
| US4530029A (en) * | 1984-03-12 | 1985-07-16 | United Technologies Corporation | Capacitive pressure sensor with low parasitic capacitance |
| FI75426C (fi) * | 1984-10-11 | 1988-06-09 | Vaisala Oy | Absoluttryckgivare. |
| US4625561A (en) * | 1984-12-06 | 1986-12-02 | Ford Motor Company | Silicon capacitive pressure sensor and method of making |
| US4675960A (en) * | 1985-12-30 | 1987-06-30 | Motorola, Inc. | Method of manufacturing an electrically variable piezoelectric hybrid capacitor |
| JPH0750789B2 (ja) * | 1986-07-18 | 1995-05-31 | 日産自動車株式会社 | 半導体圧力変換装置の製造方法 |
| JPS63149531A (ja) * | 1986-12-12 | 1988-06-22 | Fuji Electric Co Ltd | 静電容量式圧力センサ |
| GB8718637D0 (en) * | 1987-08-06 | 1987-09-09 | Spectrol Reliance Ltd | Sealing electrical feedthrough |
| DE8815425U1 (de) * | 1988-12-12 | 1990-04-12 | Fibronix Sensoren GmbH, 2300 Kiel | Überlastfester kapazitiver Drucksensor |
| US5431057A (en) * | 1990-02-12 | 1995-07-11 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Integratable capacitative pressure sensor |
| US5009690A (en) * | 1990-03-09 | 1991-04-23 | The United States Of America As Represented By The United States Department Of Energy | Method of bonding single crystal quartz by field-assisted bonding |
| US5029478A (en) * | 1990-07-19 | 1991-07-09 | Honeywell Inc. | Fluid isolated self-compensating absolute pressure sensor transducer |
| US5323656A (en) * | 1992-05-12 | 1994-06-28 | The Foxboro Company | Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same |
| US5369544A (en) * | 1993-04-05 | 1994-11-29 | Ford Motor Company | Silicon-on-insulator capacitive surface micromachined absolute pressure sensor |
| US5440931A (en) * | 1993-10-25 | 1995-08-15 | United Technologies Corporation | Reference element for high accuracy silicon capacitive pressure sensor |
| US5444901A (en) * | 1993-10-25 | 1995-08-29 | United Technologies Corporation | Method of manufacturing silicon pressure sensor having dual elements simultaneously mounted |
| US5545594A (en) * | 1993-10-26 | 1996-08-13 | Yazaki Meter Co., Ltd. | Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented |
| US5375034A (en) * | 1993-12-02 | 1994-12-20 | United Technologies Corporation | Silicon capacitive pressure sensor having a glass dielectric deposited using ion milling |
| US5448444A (en) * | 1994-01-28 | 1995-09-05 | United Technologies Corporation | Capacitive pressure sensor having a reduced area dielectric spacer |
| US5381299A (en) * | 1994-01-28 | 1995-01-10 | United Technologies Corporation | Capacitive pressure sensor having a substrate with a curved mesa |
| US5528452A (en) * | 1994-11-22 | 1996-06-18 | Case Western Reserve University | Capacitive absolute pressure sensor |
| DE10055081A1 (de) * | 2000-11-07 | 2002-05-16 | Bosch Gmbh Robert | Mikrostrukturbauelement |
| US7189378B2 (en) * | 2002-02-04 | 2007-03-13 | Kulite Semiconductor Products, Inc. | Miniature reaction chamber template structure for fabrication of nanoscale molecular systems and devices |
| EP1830167A3 (en) * | 2006-03-02 | 2010-01-20 | Alps Electric Co., Ltd. | Pressure sensor having gold-silicon eutectic crystal layer interposed between contact layer and silicon substrate |
| CN103512698A (zh) * | 2013-09-23 | 2014-01-15 | 沈阳仪表科学研究院有限公司 | 电容型绝压传感器及其制造方法 |
| US9837935B2 (en) | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3634727A (en) * | 1968-12-03 | 1972-01-11 | Bendix Corp | Capacitance-type pressure transducer |
| US3858097A (en) * | 1973-12-26 | 1974-12-31 | Bendix Corp | Pressure-sensing capacitor |
| JPS5516228A (en) * | 1978-07-21 | 1980-02-04 | Hitachi Ltd | Capacity type sensor |
| US4380041A (en) * | 1978-09-25 | 1983-04-12 | Motorola Inc. | Capacitor pressure transducer with housing |
| US4198670A (en) * | 1978-11-20 | 1980-04-15 | General Motors Corporation | Capacitive pressure transducer |
| US4415948A (en) * | 1981-10-13 | 1983-11-15 | United Technologies Corporation | Electrostatic bonded, silicon capacitive pressure transducer |
| US4424713A (en) * | 1982-06-11 | 1984-01-10 | General Signal Corporation | Silicon diaphragm capacitive pressure transducer |
-
1983
- 1983-08-29 US US06/527,531 patent/US4467394A/en not_active Expired - Lifetime
-
1984
- 1984-08-28 DE DE8484630125T patent/DE3481140D1/de not_active Expired - Lifetime
- 1984-08-28 EP EP84630125A patent/EP0136249B1/en not_active Expired
- 1984-08-29 JP JP59180261A patent/JPS6071927A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02290525A (ja) * | 1988-12-30 | 1990-11-30 | United Technol Corp <Utc> | 低誘電ドリフト容量型圧力センサ |
| JPH04116058A (ja) * | 1990-09-05 | 1992-04-16 | Nisca Corp | 原稿給送装置 |
| JP2019020398A (ja) * | 2017-07-12 | 2019-02-07 | センサータ テクノロジーズ インコーポレーテッド | 増加した容量性応答のために構成されるガラス障壁材料を備える圧力センサ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0431052B2 (enFirst) | 1992-05-25 |
| US4467394A (en) | 1984-08-21 |
| EP0136249A2 (en) | 1985-04-03 |
| DE3481140D1 (de) | 1990-03-01 |
| EP0136249A3 (en) | 1986-04-30 |
| EP0136249B1 (en) | 1990-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6071927A (ja) | 圧力トランスデユ−サ及びその製造法 | |
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| US4530029A (en) | Capacitive pressure sensor with low parasitic capacitance | |
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| JPH0718768B2 (ja) | 真空中で熱処理さるべき物体の表面特性の安定化方法及び圧力センサの作製方法 | |
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| CN114459666B (zh) | 一种电容式压差传感器、制造方法及其应用 | |
| JPH0324793B2 (enFirst) | ||
| EP3321655B1 (en) | All silicon capacitive pressure sensor | |
| US5448444A (en) | Capacitive pressure sensor having a reduced area dielectric spacer | |
| US5744725A (en) | Capacitive pressure sensor and method of fabricating same | |
| US8151642B2 (en) | Semiconductor device | |
| US5440931A (en) | Reference element for high accuracy silicon capacitive pressure sensor | |
| US5375034A (en) | Silicon capacitive pressure sensor having a glass dielectric deposited using ion milling | |
| JP3106939B2 (ja) | 静電容量式圧力検出装置 | |
| JP3293533B2 (ja) | 歪み検出素子 | |
| JP2002181650A (ja) | 圧力センサ | |
| KR20240049925A (ko) | 디지털 출력 온습도 복합센서 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |