JPS607132A - ドライエツチング装置 - Google Patents

ドライエツチング装置

Info

Publication number
JPS607132A
JPS607132A JP11456583A JP11456583A JPS607132A JP S607132 A JPS607132 A JP S607132A JP 11456583 A JP11456583 A JP 11456583A JP 11456583 A JP11456583 A JP 11456583A JP S607132 A JPS607132 A JP S607132A
Authority
JP
Japan
Prior art keywords
cathode
sample
etching
dry etching
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11456583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0473288B2 (cs
Inventor
Takashi Yamazaki
隆 山崎
Haruo Okano
晴雄 岡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11456583A priority Critical patent/JPS607132A/ja
Publication of JPS607132A publication Critical patent/JPS607132A/ja
Publication of JPH0473288B2 publication Critical patent/JPH0473288B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP11456583A 1983-06-25 1983-06-25 ドライエツチング装置 Granted JPS607132A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11456583A JPS607132A (ja) 1983-06-25 1983-06-25 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11456583A JPS607132A (ja) 1983-06-25 1983-06-25 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS607132A true JPS607132A (ja) 1985-01-14
JPH0473288B2 JPH0473288B2 (cs) 1992-11-20

Family

ID=14640994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11456583A Granted JPS607132A (ja) 1983-06-25 1983-06-25 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS607132A (cs)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137633A (ja) * 1987-11-25 1989-05-30 Hitachi Ltd 有磁場エッチング装置
JPH01200629A (ja) * 1988-02-04 1989-08-11 Nec Corp ドライエッチング装置
US5397421A (en) * 1992-10-20 1995-03-14 Sony Corporation Powder beam etching machine
EP1120811A3 (en) * 2000-01-24 2003-05-14 Han, Jeon-geon Planar-type magnetron sputtering apparatus
CN106298420A (zh) * 2015-05-22 2017-01-04 北京北方微电子基地设备工艺研究中心有限责任公司 下电极以及半导体加工设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159026A (en) * 1981-03-27 1982-10-01 Toshiba Corp Dry etching method
JPS57185982A (en) * 1981-05-06 1982-11-16 Perkin Elmer Corp Plasma etching device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01137633A (ja) * 1987-11-25 1989-05-30 Hitachi Ltd 有磁場エッチング装置
JPH01200629A (ja) * 1988-02-04 1989-08-11 Nec Corp ドライエッチング装置
US5397421A (en) * 1992-10-20 1995-03-14 Sony Corporation Powder beam etching machine
EP1120811A3 (en) * 2000-01-24 2003-05-14 Han, Jeon-geon Planar-type magnetron sputtering apparatus
CN106298420A (zh) * 2015-05-22 2017-01-04 北京北方微电子基地设备工艺研究中心有限责任公司 下电极以及半导体加工设备

Also Published As

Publication number Publication date
JPH0473288B2 (cs) 1992-11-20

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