JPS6070583A - Magnetic bubble memory element and its production - Google Patents

Abstract

PURPOSE:To remove the existence of ''Permalloy'' residual at the formation of a ''Permalloy'' pattern by smoothing the boundary part between spacers having large and small patterns respectively by using heat-resistant resin. CONSTITUTION:The 1st spacer layer 11 consisting of an SiO2 film is formed on the whole surface of a bubble crystal 10 and a conductor pattern 12 and the 2nd spacer layer 13 consisting of an SiO2 film are formed on the 1st spacer layer 11. A part of the SiO2 film is etched to form the 1st spacer layer 11 and the 2nd spacer layer 13 and heat-resistant resin is applied to the whole surface and hardened to form a heat-resistant resin layer 14. Then, a small pattern is formed on the layer 14 and large patterns 16 are formed on the resin layer 14 on the 1st and 2nd spacers 11, 13 to obtain a magnetic bubble memory element. Consequently, the generation of etching residual is prevented at the formation of the ''Permalloy'' pattern and the formation process is simplified.

Description

DETAILED DESCRIPTION OF THE INVENTION TECHNICAL FIELD OF THE INVENTION The present invention relates to a magnetic bubble memory device used as a storage device for electronic computing devices, and more particularly to a memory element thereof.

Background of the Technology Magnetic bubble-based devices that use magnetic bubbles to store information 7 i1'ii Devices that use magnetic bubbles to perform physical operations, etc. have many features such as non-volatility, high storage density, and low power consumption. Since it is a solid-state element that does not contain any fluorine, it has high reliability against fluorine. In such magnetic bubble memory devices, the storage density is expected to increase due to the recent increase in the amount of information and the demand for miniaturization of devices. To do this, it is necessary to make the soft magnetic thin film pattern that transfers the bubbles smaller, but in order to facilitate alignment between the soft magnetic pattern in the Funkshiron gate part and the conductor pattern, it is necessary to make it smaller in the minor loop part where information is stored. ) A method has been developed in which a large pattern is used for the major line and function gate portions where information is written and read. In this case, in order to match the bubble transfer characteristics between the small pattern and the large pattern, the spacer thickness of the small pattern is made thinner than that of the large pattern to increase interaction with the crystal.

Prior Art and Problems FIG. 1 is a diagram for explaining the layer structure of a conventional magnetic bubble memory device having large patterns and small patterns. In this layer structure, a first spacer layer 2 is created on the entire surface of a bubble crystal 1, a conductor material is vapor-deposited or spun on it, and a conductor pattern 3 is formed on this conductor material by photolithography and ion etching. , Next G), apply PuO2 (polyladder organosiloxane resin) to the entire surface and heat cure it to form the second spacer layer 4.
After forming the first thin part of the spacer. After the second spacer layer was removed by CF4 gas plasma etching and a third spacer layer 5 was formed on the entire surface, permalloy was deposited and patterned to form a permalloy pattern 6. Such a layer structure has a disadvantage that the boundary between the thin and thick portions of the spacer is steep, and the permalloy residue 7 remains in this portion during the creation of the permalloy pattern.

OBJECTS OF THE INVENTION An object of the present invention is to provide a magnetic bubble memory element that does not create a steep step in a spacer layer, and a method for manufacturing the same, in view of the above-mentioned conventional drawbacks.

According to the present invention, soft magnetic patterns of different sizes are provided as bubble transport paths on a magnetic bubble crystal, and the spacer thickness between the large pattern and the crystal is changed between the small pattern and the crystal. In a magnetic bubble memory element having a layer structure that is thicker than the thickness of the spacer between them, the boundary between the spacer between a large pattern and a small turn is flattened using a heat-resistant resin. This is achieved by providing

Additionally, a first spacer layer (insulating N) is placed on top of the magnetic bubble crystal.
, then a conductor pattern is created thereon, a second spacer layer is created, a portion of the first and second spacer layers are etched away, and then the entire surface is coated with a heat-resistant resin. This is achieved by providing a method for making a magnetic bubble memory device characterized by:

Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

FIG. 2 is a diagram for explaining a magnetic bubble memory device and a method of manufacturing the same according to the present invention. In the same figure, 10
11 is a bubble crystal, 11 is a first spacer layer, 12 is a conductor pattern, 13 is a second spacer layer, 14 is a heat-resistant resin layer, 15 is a small permalloy pattern, and 16 is a large permalloy pattern.

The method for producing the magnetic bubble memory element of this embodiment is to first form a 5i0
2 films are created, and then a conductor pattern 12 is formed on it.
, and then the second spacer layer 13 tonal 5i02
After forming a film (about 2,000 Iv), a part of the 5i02 film that will become the first and second spacer layers is removed by etching to form the first spacer layer 11 and the second spacer layer 13. .

Next, heat-resistant resin such as PuO2 (polyladder organosiloxane resin) is applied and cured on the entire surface to form heat-resistant resin layer 1.
form 4. Thereafter, a small pattern 15 is formed using a soft magnetic thin film on this resin layer 14, and a large pattern 16 is formed on the resin layer 14 above the first and second spacers 11 and 13, resulting in the structure as shown in the figure. A magnetic bubble memory device is obtained.

In the magnetic bubble memory element of this example produced in this way, the spacer at the boundary between the small pattern 15 and the large pattern 16 is the heat-resistant resin layer 14, so the first. Second
The steps created by etching on the spacers 11 and 13 are flattened, so that no etching residue remains when forming the permalloy patterns 15 and 16.

Next, a second embodiment will be explained using FIG. 3.

In this figure, the same parts as in FIG. 2 are designated by the same reference numerals. This embodiment differs from the previous embodiment in that the thickness of the 5i02 film of the first spacer layer 11 is increased (2500 layers), thereby omitting the creation of the second spacer layer 13. The advantage of this embodiment is that the upper steps, which have the same effect as the previous embodiment, are simplified.

In both examples, the thickness of the spacer is 2000 mm at the thinner part.
The number of people is 4,500 in the thick part (excluding the part on the conductor), and the bubble transfer characteristics of the large and small permalloy patterns 15 and 16 can be matched. Furthermore, in the embodiment shown in FIG. 2, the first spacer layer 11 is not necessarily required. It is also possible to use this 5i02 as a material having high selective etching properties with respect to 5i02 of the second spacer layer, such as A120g, and leave it in place when forming the thin spacer portion.

Effects of the Invention As described in detail above, the magnetic bubble memory device and the method for manufacturing the same according to the present invention can be used in magnetic bubble memory devices having permalloy patterns of different sizes and with different spacer thicknesses. This has the great effect of flattening the step of the spacer at the boundary of the permalloy pattern with the heat-resistant resin, preventing the generation of etching residue during the creation of the permalloy pattern, and simplifying the creation process.

[Brief explanation of the drawing]

Fig. 1 is a diagram for explaining a conventional magnetic bubble memory element, Fig. 2 is a diagram for explaining a magnetic bubble memory element according to the present invention and its manufacturing method, and Fig. 3 is a diagram for explaining another embodiment. This is a diagram for In the drawing, 10 is a bubble crystal, 11 is a first spacer layer, 12 is a conductor pattern, 13 is a second spacer layer, 14 is a heat-resistant resin layer, 15 is a small permalloy pattern, and 16 is a large permalloy pattern 7. show. Figure 2 1 day Figure 3 6

Claims (1)

[Claims] 1. Soft magnetic patterns of different sizes are provided as bubble transfer paths on the magnetic bubble crystal, and the spacer thickness between the large pattern and the crystal is greater than the spacer thickness between the small pattern and the crystal. A magnetic bubble memory element having a thick layer structure, characterized in that the boundary between a spacer between a large pattern and a small pattern is flattened using a heat-resistant resin. 2. First spacer layer (insulating N) on top of the magnetic bubble crystal
, then create a conductor pattern thereon, then create a second spacer layer, then remove part of the first and second spacer layers by etching, and then coat the entire surface with heat-resistant resin. A method for creating a magnetic bubble memory element characterized by: 3. The method for producing a magnetic bubble memory element according to claim 2, wherein the method for producing a magnetic bubble memory element does not include the production of the second spacer layer.